Vishay General Semiconductor - Diodes Division SMBJ6.0CHE3/52

Overview

SMBJ6.0CHE3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 6.0 V stand-off voltage (V_WM), 6.67–7.37 V breakdown voltage (V_BR) at 10 mA, 600 W peak pulse power (10/1000 µs), and clamps transients to ≤10.3 V at 58.3 A peak surge current - deployed on power rails and signal lines in automotive ECUs and industrial sensor interfaces.

For engineers reviewing the SMBJ6.0CHE3/52 datasheet, SMBJ6.0CHE3/52 pinout, SMBJ6.0CHE3/52 application, or SMBJ6.0CHE3/52 equivalent, key selection criteria include its AEC-Q101 qualification, low clamping voltage under high surge, unidirectional polarity with cathode band marking, and compatibility with automated SMT assembly on standard PCB pad layouts.

Technical Context

This TVS diode operates as a voltage-clamping device that enters avalanche conduction when reverse voltage exceeds V_BR, limiting transient energy to protected downstream circuitry. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<800 µA at V_WM), while the SMB package supports thermal dissipation up to 5.0 W at 50 °C ambient.

The device complies with IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT), and ISO 7637-2 (automotive load dump) immunity requirements when applied with appropriate layout practices. Its 0.059 %/°C V_BR temperature coefficient enables predictable performance across -55 °C to +150 °C operating junction range.

Key Specifications

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by molded band on one end.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMBJ6.0AHE3/52, SMBJ6.0CHE3/52 adds automotive-grade reliability validation without trade-offs in clamping or power handling; versus SMAJ6.0AHE3/52, it delivers 50 % higher surge capacity and superior thermal performance in identical SMT footprint.

Availability

SMBJ6.0CHE3/52 is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and smart metering systems requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for SMBJ6.0CHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.

The SMBJ series is engineered for high-energy transient suppression in harsh environments - particularly targeting automotive, industrial, and telecom infrastructure where failure modes must be rigorously controlled.

FAQ

What is the maximum clamping voltage of SMBJ6.0CHE3/52 at its rated peak pulse current?

The SMBJ6.0CHE3/52 clamps to a maximum of 10.3 V when subjected to its rated 58.3 A peak pulse current (10/1000 µs waveform). This value is guaranteed across temperature and process variation per Vishay's datasheet Document Number 88392, ensuring consistent protection margin for 5 V logic systems. The SMBJ6.0CHE3/52 achieves this with low incremental surge resistance, minimizing voltage overshoot during fast-rising transients.

Is SMBJ6.0CHE3/52 suitable for bidirectional transient protection?

No - SMBJ6.0CHE3/52 is a unidirectional TVS diode, identified by the "A" suffix and cathode band marking. For bidirectional protection, Vishay specifies the "CA" suffix (e.g., SMBJ6.0CA). Using SMBJ6.0CHE3/52 in bidirectional applications risks forward conduction during negative transients, potentially damaging the device or failing to protect. Always verify polarity alignment in schematic and layout for SMBJ6.0CHE3/52.

Does SMBJ6.0CHE3/52 meet automotive qualification standards?

Yes - the "HE3" suffix explicitly denotes AEC-Q101 qualification per Vishay's ordering nomenclature and datasheet footnote (1). SMBJ6.0CHE3/52 has undergone stress testing including temperature cycling, high-temperature reverse bias (HTRB), and ESD per AEC-Q101 Rev D, making it approved for use in automotive electronic control units, body modules, and infotainment systems.

What is the thermal resistance junction-to-ambient for SMBJ6.0CHE3/52?

The typical thermal resistance junction-to-ambient (R_θJA) for SMBJ6.0CHE3/52 is 100 °C/W when mounted on the recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, per Vishay Document Number 88392. This value assumes standard FR-4 PCB with no internal copper planes; actual R_θJA improves with enhanced thermal land design, directly impacting sustained power dissipation capability of the SMBJ6.0CHE3/52.

How does the breakdown voltage tolerance of SMBJ6.0CHE3/52 affect circuit design?

SMBJ6.0CHE3/52 has a specified V_BR range of 6.67 V to 7.37 V at 10 mA test current, representing ±5.2 % tolerance around the nominal 7.0 V midpoint. Designers must ensure system operating voltage (e.g., 6.0 V V_WM) maintains ≥10 % margin below minimum V_BR to avoid premature conduction, while verifying that maximum clamped voltage (10.3 V) stays within absolute maximum ratings of downstream components. This tolerance is fully characterized and guaranteed for SMBJ6.0CHE3/52.