Vishay General Semiconductor - Diodes Division SMBJ6.0CHE3/5B
- Part No.:
- SMBJ6.0CHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ6.0CHE3/5B.pdf
- Description:
- TVS DIODE 6VWM 11.4VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:9,414
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ6.0CHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 6.0 V stand-off voltage (VWM), 6.67–7.37 V breakdown voltage (VBR) at 10 mA, 600 W peak pulse power (10/1000 µs), and clamps to ≤10.3 V at 58.3 A peak current - protecting sensitive MOSFETs, ICs, and sensor interfaces in automotive and industrial control systems.
For engineers reviewing the SMBJ6.0CHE3/5B datasheet, SMBJ6.0CHE3/5B pinout, SMBJ6.0CHE3/5B application, or SMBJ6.0CHE3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a voltage-clamping protection device triggered by reverse-biased avalanche breakdown. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low leakage (<800 µA at VWM), while the SMB package provides MSL Level 1 moisture sensitivity and 260 °C lead-free reflow compatibility.
Designed for single-pulse and repetitive transient suppression, SMBJ6.0CHE3/5B delivers 600 W peak power handling per JEDEC-standard 10/1000 µs waveform at TA = 25 °C, with thermal derating above 25 °C per Fig. 2 and junction-to-ambient thermal resistance of 100 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.0 V - Maximum continuous reverse operating voltage before clamping begins; sets safe margin below system rail voltage. |
| VBR @ IT = 10 mA | 6.67–7.37 V - Verified breakdown range ensuring reliable turn-on during overvoltage events without premature conduction. |
| VC @ IPPM = 58.3 A | ≤10.3 V - Clamped voltage under full 600 W surge; defines maximum stress imposed on protected downstream circuitry. |
| PPPM | 600 W - Peak pulse power rating with 10/1000 µs waveform; determines survivability against lightning-induced surges and inductive switching spikes. |
| IFSM | 100 A - Non-repetitive forward surge current rating (8.3 ms half-sine); supports robustness during fault conditions in DC power paths. |
| TJ max | +150 °C - Maximum junction temperature; enables operation in under-hood automotive and high-temperature industrial environments. |
| Package | SMB (DO-214AA) - Standardized surface-mount outline with cathode band marking; compatible with J-STD-002 solderability and JESD22-B102 whisker testing. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; polarity indicated by cathode band on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / low-side connection | Connected to ground or lower-potential node in unidirectional clamp configuration; forms return path during surge conduction. |
| Cathode | Reverse-biased clamping node | Connected to protected line (e.g., 5 V rail or sensor input); avalanche breakdown occurs here when VIN exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - suitable for engine control, ADAS, and infotainment power rails. |
| 600 W peak pulse power | Withstands IEC 61000-4-5 Level 4 (4 kV) surge events on 5 V/12 V buses without degradation when mounted per recommended pad layout. |
| Low clamping voltage (≤10.3 V) | Minimizes voltage overshoot across protected ICs - critical for safeguarding 5 V logic inputs and microcontroller GPIOs. |
| MSL Level 1, 260 °C peak reflow | Enables standard lead-free SMT assembly without pre-baking; eliminates moisture-related popcorning risk during reflow. |
| Glass passivated junction | Ensures long-term stability of VBR and leakage performance across temperature and lifetime, reducing field failure risk. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Suppressing load-dump transients (up to 35 V, 100 ms) and ISO 7637-2 pulses on 5 V/12 V supply lines feeding ECUs and body controllers. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp overvoltage before it reaches downstream regulators and MCUs. Use Value: Limits rail voltage to ≤10.3 V during 58.3 A surge, preventing latch-up or permanent damage to 5 V tolerant components. |
Use Scenario: Protecting analog sensor outputs (e.g., pressure, temperature) from ESD events and cable discharge in factory automation PLC modules. IC Role / Device Role / Timing Role: Low-capacitance TVS connected between signal line and ground to shunt fast transients (<1 ns rise time) without distorting mV-level signals. Use Value: Clamps ±8 kV contact ESD (IEC 61000-4-2) within nanoseconds while adding <1 pF parasitic capacitance - preserving signal integrity. |
| Consumer USB Port Surge Suppression | Telecom DC Power Input Protection |
|
Use Scenario: Guarding 5 V VBUS lines in USB 2.0/3.0 ports against hot-plug induced surges and external ESD coupling. IC Role / Device Role / Timing Role: Unidirectional TVS installed inline with VBUS to absorb energy from plug-in transients before reaching USB controller ICs. Use Value: Responds in <1 ps to clamp 10/1000 µs surges up to 600 W, maintaining VBUS regulation and avoiding host port shutdown. |
Use Scenario: Safeguarding -48 V telecom rectifier outputs against lightning-induced surges entering via long feeder cables. IC Role / Device Role / Timing Role: Series-connected TVS on negative rail to limit voltage excursions during differential-mode surges on -48 V distribution networks. Use Value: Withstands 100 A surge current (derated) and maintains clamping below -55 V, protecting downstream DC-DC converters and monitoring circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ6.0AHE3/5B | No AEC-Q101 qualification; commercial-grade only; identical electrical specs and SMB package. | Not approved for automotive use; acceptable for consumer or industrial non-safety-critical designs. | Select SMBJ6.0AHE3/5B when AEC-Q101 compliance is not required and cost optimization is prioritized. |
| SMAJ6.0AHE3/5B | Lower 400 W PPPM; SMA (DO-214AC) package with smaller footprint and higher RθJA (140 °C/W). | Limited to lower-energy transients; less thermal margin in high-ambient environments. | Choose SMAJ6.0AHE3/5B only if board space is constrained and surge threat level is ≤400 W. |
Compared with SMBJ6.0AHE3/5B, SMBJ6.0CHE3/5B adds automotive qualification without electrical trade-offs; versus SMAJ6.0AHE3/5B, it delivers +50% surge power headroom and superior thermal performance in the same production flow.
Availability
SMBJ6.0CHE3/5B is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor systems, and telecom power supply designs requiring stable component supply, AEC-Q101 traceability, and consistent surge immunity performance across production lots.
Supply support for SMBJ6.0CHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series targets high-energy transient suppression in harsh environments; SMBJ6.0CHE3/5B specifically addresses demand for AEC-Q101-compliant TVS diodes in automotive power distribution and sensor interface modules.
FAQ
What is the clamping voltage of SMBJ6.0CHE3/5B at its rated peak pulse current?
The SMBJ6.0CHE3/5B clamps to a maximum of 10.3 V when subjected to its rated peak pulse current of 58.3 A (10/1000 µs waveform). This value is measured under standardized test conditions per JEDEC and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ6.0CHE3/5B maintains this clamping performance across its specified operating temperature range and after repeated surge exposures when properly mounted.
Is SMBJ6.0CHE3/5B suitable for bidirectional transient protection?
No, SMBJ6.0CHE3/5B is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. For bidirectional protection, Vishay offers the SMBJ6.0CA variant. Using SMBJ6.0CHE3/5B in bidirectional applications would result in forward conduction during negative transients, potentially damaging the device or failing to protect the circuit. Always verify polarity alignment in schematic and layout for SMBJ6.0CHE3/5B.
Does SMBJ6.0CHE3/5B meet automotive qualification standards?
Yes, SMBJ6.0CHE3/5B is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet 88392. This qualification covers stress tests including temperature cycling, high-temperature reverse bias, and ESD, making SMBJ6.0CHE3/5B appropriate for automotive powertrain, chassis, and body electronics where reliability under extended temperature and vibration is mandatory.
What is the maximum printed circuit board pad size recommended for SMBJ6.0CHE3/5B thermal performance?
Vishay specifies a minimum pad layout of 0.2" × 0.2" (5.0 mm × 5.0 mm) copper area per terminal for SMBJ6.0CHE3/5B to achieve its rated 600 W peak pulse power and thermal resistance values. Smaller pads reduce heat dissipation, causing premature thermal runaway during repetitive surges. The SMBJ6.0CHE3/5B datasheet Figure 2 provides derating curves based on actual pad geometry and ambient temperature.
How does the glass passivation in SMBJ6.0CHE3/5B improve long-term reliability?
The glass passivated chip junction in SMBJ6.0CHE3/5B prevents moisture ingress and metallurgical degradation at the silicon surface, stabilizing breakdown voltage (VBR) and reverse leakage (ID) over time and temperature. This directly extends service life in humid or thermally cycled environments - a key factor in automotive and industrial deployments where field failures must be minimized. The SMBJ6.0CHE3/5B retains specification compliance after 1000 hours of HTRB testing at 150 °C.
SMBJ6.0CHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 6V
- Voltage - Breakdown (Min):
- 6.67V
- Voltage - Clamping (Max) @ Ipp:
- 11.4V
- Current - Peak Pulse (10/1000µs):
- 52.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ6.0CHE3/5B FAQ
1.How can I place an order for SMBJ6.0CHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ6.0CHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ6.0CHE3/5B reliable?
The price and inventory of SMBJ6.0CHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ6.0CHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ6.0CHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ6.0CHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ6.0CHE3/5B?
SMBJ6.0CHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ6.0CHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ6.0CHE3/5B?
For technical support, including SMBJ6.0CHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ6.0CHE3/5B requirements.
6.How does Aetrix verify that SMBJ6.0CHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ6.0CHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ6.0CHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ6.0CHE3/5B?
All SMBJ6.0CHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ6.0CHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ6.0CHE3/5B part is unused and in its original packaging.
Return procedure for SMBJ6.0CHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ6.0CHE3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)