Vishay General Semiconductor - Diodes Division SMBJ60-E3/5B
- Part No.:
- SMBJ60-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ60-E3/5B.pdf
- Description:
- TVS DIODE 60VWM 107VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ60-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features 60 V standoff voltage (VWM), 66.7–73.7 V breakdown voltage (VBR) at 1 mA, 600 W peak pulse power (10/1000 µs), 96.8 V maximum clamping voltage (VC) at 6.2 A, and operates from –55 °C to +150 °C junction temperature - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ60-E3/5B datasheet, SMBJ60-E3/5B pinout, SMBJ60-E3/5B application, or SMBJ60-E3/5B equivalent, key selection criteria include unidirectional polarity, 60 V working voltage compatibility with 48 V DC systems, clamping performance under 10/1000 µs surge, thermal resistance (RθJA = 100 °C/W), and RoHS-compliant commercial-grade packaging with matte tin leads.
Technical Context
This TVS diode operates as a voltage-clamping protection device in parallel with sensitive circuit nodes. Its glass-passivated junction enables fast response (<1 ns), low incremental surge resistance, and stable clamping under repetitive 10/1000 µs transients at 0.01% duty cycle. The unidirectional configuration provides forward conduction path only during reverse overvoltage events.
Thermal design relies on PCB copper pad area (0.2" × 0.2") for derating above 25 °C ambient; RθJL = 20 °C/W supports localized heat transfer to leads. Polarity is marked by cathode band, and it meets MSL Level 1 per J-STD-020 with 260 °C reflow peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 60 V - Maximum continuous reverse operating voltage before clamping begins; matches 48 V nominal bus with 25% margin. |
| VBR (min/max) | 66.7 V / 73.7 V at IT = 1 mA - Confirmed breakdown range ensures reliable turn-on without premature conduction. |
| VC @ IPPM | 96.8 V at 6.2 A - Clamping voltage limits downstream stress during 600 W transient; critical for 100 V-rated components. |
| PPPM | 600 W (10/1000 µs) - Peak surge handling capability for lightning-induced or inductive-switching transients in industrial environments. |
| IFSM | 100 A (8.3 ms half-sine) - Withstands single-event high-current surges without bond-wire failure. |
| TJ max. | +150 °C - Enables operation in high-temperature enclosures or near power stages without thermal shutdown. |
| RθJA | 100 °C/W - Requires minimum 5.0 mm × 5.0 mm copper pads per terminal for full power rating at TA = 50 °C. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference node | Connected to system ground or lower-potential rail; defines clamping reference point for unidirectional operation. |
| Cathode | Clamping output / Surge current sink | Connected to protected line (e.g., 48 V input); conducts transient current to ground when VIN exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables robust protection against IEC 61000-4-5 Level 3 (1 kV/2 Ω) surges without derating in standard layouts. |
| Glass passivated junction | Ensures stable VBR over temperature and lifetime, with <0.1 %/°C drift and no parameter shift after 1000 surge cycles. |
| MSL Level 1, 260 °C peak reflow | Supports lead-free assembly without popcorn cracking or delamination; no floor life limitation pre-bake. |
| RoHS-compliant, commercial grade (E3 suffix) | Meets EU RoHS Directive 2011/65/EU and REACH SVHC requirements; suitable for non-automotive industrial applications. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients (<1 ns response), reducing voltage stress on downstream FETs or regulators. |
Applications
| Industrial Power Supply Input Protection | Automotive Body Control Module (BCM) Power Rail |
|---|---|
Use Scenario: 48 V DC input stage of programmable logic controller (PLC) power supply exposed to load dump and relay switching noise. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed across input capacitor to limit transient voltage to ≤100 V. Use Value: Prevents damage to upstream rectifier and downstream buck controller by clamping 600 W surges within 96.8 V, preserving 20% margin below 120 V rated components. |
Use Scenario: 12 V battery-fed power rail in BCM subjected to ISO 7637-2 pulse 1 (inductive switch-off) and pulse 3a/b (load dump simulation). IC Role / Device Role / Timing Role: Standoff-rated TVS on main VBAT line, activated only during >60 V excursions. Use Value: Maintains system uptime by absorbing 100 A surge peaks without degradation, meeting AEC-Q101 qualification when HE3 variant is selected. |
| Telecom Remote Radio Unit (RRU) DC Feeder Line | Factory Automation Sensor Interface Protection |
Use Scenario: Outdoor RRU powered via 48 V PoE-like feeder cable, subject to lightning-induced common-mode surges. IC Role / Device Role / Timing Role: Primary unidirectional clamp on DC input, coordinated with gas discharge tube (GDT) for staged protection. Use Value: Limits let-through voltage to <100 V within 1 ns, enabling use of cost-effective 100 V MOSFETs instead of 150 V devices in front-end regulation. |
Use Scenario: Analog 4–20 mA current loop interface on PLC analog input module exposed to ESD and field wiring faults. IC Role / Device Role / Timing Role: Secondary-level TVS on signal line, placed after series resistor to limit current into protected amplifier. Use Value: Clamps transients to <15 V while maintaining <1 µA leakage at 60 V, preventing false triggering or offset drift in precision current-to-voltage conversion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ60A-M3/5B | Halogen-free, RoHS-compliant; identical electrical specs and SMB package. | No difference in protection performance; preferred where halogen-free compliance is mandated (e.g., EU public infrastructure projects). | Select SMBJ60A-M3/5B when halogen-free material declaration is required; otherwise SMBJ60-E3/5B offers standard commercial-grade compliance. |
| SMAJ60A-E3/61 | Lower peak pulse power (400 W), smaller SMA (DO-214AC) package, higher RθJA (140 °C/W). | Not suitable for 600 W surge environments; requires larger copper area or active cooling to match thermal performance. | Choose SMAJ60A-E3/61 only for space-constrained designs with reduced surge threat level (e.g., internal board-level coupling, not direct line entry). |
Compared with SMBJ60A-M3/5B, SMBJ60-E3/5B offers identical protection but with standard RoHS compliance; versus SMAJ60A-E3/61, it delivers 50% higher surge power handling and 29% lower thermal resistance - making it the preferred choice for primary-line protection in harsh industrial settings.
Availability
SMBJ60-E3/5B is available at Aetrix Electronics and suitable for industrial power supplies, factory automation sensor interfaces, telecom remote radio units, and automotive body control modules requiring stable component supply and long-term obsolescence management.
Supply support for SMBJ60-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, power efficiency, and ruggedized packaging.
The SMBJ series was developed for high-energy transient suppression in demanding industrial, telecom, and transportation systems - delivering consistent clamping performance across wide temperature ranges and extended service life under repetitive surge stress.
FAQ
What is the maximum clamping voltage of SMBJ60-E3/5B at its rated peak pulse current?
The SMBJ60-E3/5B has a maximum clamping voltage (VC) of 96.8 V at its rated peak pulse current (IPPM) of 6.2 A under a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 standards and ensures downstream components see limited overvoltage stress during surge events. The SMBJ60-E3/5B maintains this clamping performance across its full operating temperature range.
Is SMBJ60-E3/5B suitable for automotive applications?
The SMBJ60-E3/5B is a commercial-grade part and not AEC-Q101 qualified. For automotive use, Vishay offers the SMBJ60HE3_B variant (with HE3 suffix), which is AEC-Q101 qualified and RoHS-compliant. The SMBJ60-E3/5B itself is intended for industrial, telecom, and consumer applications where automotive qualification is not required.
What is the standoff voltage (VWM) of SMBJ60-E3/5B and how does it relate to system voltage?
The standoff voltage (VWM) of SMBJ60-E3/5B is 60 V - the maximum DC or continuous reverse voltage the device can withstand without entering breakdown. It is selected to provide ≥20% margin above a 48 V nominal system bus, ensuring no leakage or conduction during normal operation while allowing rapid clamping during overvoltage events. This makes SMBJ60-E3/5B ideal for 48 V DC power distribution networks.
Does SMBJ60-E3/5B have polarity marking, and how is it identified?
Yes, SMBJ60-E3/5B is unidirectional and features a cathode band marking on the SMB (DO-214AA) package body. The banded end corresponds to the cathode terminal, which must be connected toward the protected line (e.g., 48 V input), while the anode connects to ground. This polarity is critical for correct clamping behavior and must be observed during PCB layout and assembly.
What is the thermal resistance and recommended PCB layout for SMBJ60-E3/5B to achieve full 600 W rating?
The SMBJ60-E3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To sustain full 600 W peak pulse power without exceeding TJ = 150 °C, designers must implement these minimum pad dimensions and ensure adequate copper area for heat spreading. Smaller pads will require derating per Figure 2 in the datasheet.
SMBJ60-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 60V
- Voltage - Breakdown (Min):
- 66.7V
- Voltage - Clamping (Max) @ Ipp:
- 107V
- Current - Peak Pulse (10/1000µs):
- 5.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ60-E3/5B FAQ
1.How can I place an order for SMBJ60-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ60-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ60-E3/5B reliable?
The price and inventory of SMBJ60-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ60-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ60-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ60-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ60-E3/5B?
SMBJ60-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ60-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ60-E3/5B?
For technical support, including SMBJ60-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ60-E3/5B requirements.
6.How does Aetrix verify that SMBJ60-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ60-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ60-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ60-E3/5B?
All SMBJ60-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ60-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ60-E3/5B part is unused and in its original packaging.
Return procedure for SMBJ60-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ60-E3/5B Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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