Vishay General Semiconductor - Diodes Division SMBJ6.0HE3/52
- Part No.:
- SMBJ6.0HE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ6.0HE3/52.pdf
- Description:
- TVS DIODE 6VWM 11.4VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:9,424
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ6.0HE3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 6.0 V stand-off voltage (VWM), 6.67–7.37 V breakdown voltage (VBR) at 10 mA, 600 W peak pulse power (10/1000 µs), clamping voltage of 10.3 V at 58.3 A, and AEC-Q101 qualification for automotive use.
For engineers reviewing the SMBJ6.0HE3/52 datasheet, SMBJ6.0HE3/52 pinout, SMBJ6.0HE3/52 application, or SMBJ6.0HE3/52 equivalent, key selection considerations include its unidirectional polarity, 10.3 V clamping performance under 58.3 A surge, AEC-Q101 qualification status, RoHS-compliant matte tin terminals, and compatibility with automated SMT placement on standard PCB pads.
Technical Context
This TVS diode operates as a clamping device that remains non-conductive below 6.0 V and rapidly transitions to low-impedance conduction above its breakdown threshold to divert transient energy away from protected circuitry. Its glass-passivated junction ensures stable leakage (<800 µA at VWM) and repeatable clamping behavior across temperature.
The SMBJ6.0HE3/52 delivers 600 W peak pulse power handling with a 10/1000 µs waveform, exhibits 0.059 %/°C VBR temperature coefficient, and maintains operation from –55 °C to +150 °C junction temperature - enabling reliable protection in automotive engine control units, industrial motor drives, and telecom interface circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.0 V - Maximum continuous reverse operating voltage before significant leakage begins; defines safe signal line operating margin. |
| VBR (min/max) | 6.67 V / 7.37 V at 10 mA - Confirmed breakdown range ensuring predictable turn-on during transients without premature conduction. |
| VC @ IPPM | 10.3 V at 58.3 A - Clamped voltage during full 600 W surge; determines maximum stress imposed on downstream ICs or MOSFETs. |
| IPPM | 58.3 A - Peak surge current capability with 10/1000 µs waveform; validates protection against IEC 61000-4-5 Level 4 surges. |
| PPPM | 600 W - Peak pulse power rating; enables single-device suppression of high-energy transients induced by inductive switching or ESD. |
| TJ max. | +150 °C - Maximum junction temperature; supports operation in under-hood automotive environments and enclosed industrial enclosures. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC specification. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction | Connected to ground or lower-potential rail in unidirectional protection configurations. |
| Cathode | Current exit terminal during forward conduction; marked with band | Connected to protected signal line or power rail; conducts surge current toward ground when VAK exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables single-device suppression of high-energy transients from relay coil flyback or lightning-induced surges without derating. |
| AEC-Q101 qualified | Validated for automotive applications including engine control modules, body electronics, and ADAS sensor interfaces. |
| Glass passivated junction | Ensures stable VBR, low leakage (<800 µA), and long-term reliability under thermal cycling and humidity exposure. |
| MSL Level 1 (260 °C peak reflow) | Supports standard lead-free SMT reflow profiles without moisture-related popcorning or delamination. |
| Low incremental surge resistance | Minimizes clamping voltage overshoot during fast-rising transients (e.g., ESD), improving protection margin for 3.3 V/5 V logic. |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V supply lines in engine control units (ECUs) against load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and local regulator input to clamp transients up to ±100 V. Use Value: Clamps to 10.3 V at 58.3 A, preventing damage to downstream LDOs and microcontrollers while meeting ISO 7637-2 Pulse 5a requirements. |
Use Scenario: Safeguarding analog outputs of pressure/temperature sensors in factory automation systems. IC Role / Device Role / Timing Role: TVS connected across sensor output and ground to absorb ESD events and cable discharge transients. Use Value: Sub-11 V clamping ensures sensor signal integrity remains within ADC input range even during 8 kV contact ESD per IEC 61000-4-2. |
| Telecom Data Line Surge Suppression | Consumer USB Port Overvoltage Protection |
|
Use Scenario: Shielding RS-485 transceivers in base station backhaul equipment from induced lightning surges. IC Role / Device Role / Timing Role: Unidirectional TVS on each differential line referenced to ground, coordinated with common-mode chokes. Use Value: 600 W rating handles 10/1000 µs surges up to 4 kV per IEC 61000-4-5, maintaining signal integrity through fast 1 ns response time. |
Use Scenario: Preventing damage to USB 2.0 data lines (D+/D−) in smart home hubs during hot-plug or ESD events. IC Role / Device Role / Timing Role: Dual-SMBJ configuration (one per line) with cathodes tied to VCC or ground depending on signal polarity. Use Value: 10.3 V clamping prevents latch-up in USB PHY transceivers while supporting 480 Mbps signaling with minimal capacitance impact. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ6.0A-E3/52 | Commercial-grade version; same VWM, VBR, VC, and PPPM, but not AEC-Q101 qualified. | Lacks automotive qualification; suitable for consumer or industrial applications where extended temperature validation is not required. | Select SMBJ6.0A-E3/52 for cost-sensitive non-automotive designs with identical electrical specs. |
| SMAJ6.0AHE3/A | Lower 400 W PPPM; SMA package (smaller footprint); higher RθJA (140 °C/W vs. 100 °C/W). | Reduced surge handling; limited to lower-energy transients; less thermal margin in high-power density layouts. | Choose SMAJ6.0AHE3/A only when board space is constrained and peak surge currents remain below 36.7 A. |
Compared with SMBJ6.0A-E3/52, the SMBJ6.0HE3/52 adds AEC-Q101 qualification for automotive use without sacrificing electrical performance; versus SMAJ6.0AHE3/A, it provides 50 % higher surge power handling and superior thermal dissipation in the larger SMB package.
Availability
SMBJ6.0HE3/52 is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, telecom interface modules, and consumer USB protection requiring stable component supply and long-term lifecycle support.
Supply support for SMBJ6.0HE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and power MOSFETs with emphasis on reliability and application-specific performance.
The SMBJ series was developed for high-reliability transient suppression in harsh environments - particularly automotive, industrial, and telecom systems requiring robust, standardized, and AEC-Q101-qualified protection components.
FAQ
What is the clamping voltage of SMBJ6.0HE3/52 and how is it measured?
The SMBJ6.0HE3/52 has a maximum clamping voltage (VC) of 10.3 V, measured at its peak pulse current (IPPM) of 58.3 A using a 10/1000 µs waveform. This value represents the actual voltage seen across the device during a full 600 W transient event and is critical for determining whether downstream components remain within their absolute maximum ratings.
Is SMBJ6.0HE3/52 suitable for automotive applications?
Yes, SMBJ6.0HE3/52 is AEC-Q101 qualified and specifically designed for automotive use. Its construction includes glass-passivated junctions, MSL Level 1 reflow compatibility, and validated performance across –55 °C to +150 °C, making it appropriate for engine control units, body control modules, and ADAS sensor interfaces.
How does the SMBJ6.0HE3/52 differ from the SMBJ6.0A-E3/52?
The SMBJ6.0HE3/52 and SMBJ6.0A-E3/52 share identical electrical specifications - including VWM = 6.0 V, VBR = 6.67–7.37 V, and VC = 10.3 V - but differ in qualification: SMBJ6.0HE3/52 is AEC-Q101 qualified, whereas SMBJ6.0A-E3/52 is commercial grade only. Both use RoHS-compliant matte tin terminations and SMB (DO-214AA) packaging.
What is the maximum reverse leakage current for SMBJ6.0HE3/52 at rated VWM?
The SMBJ6.0HE3/52 exhibits a maximum reverse leakage current (ID) of 800 µA at its rated stand-off voltage of 6.0 V and ambient temperature of 25 °C. This low leakage ensures minimal power loss and signal distortion in always-on protection circuits such as automotive CAN bus or sensor bias rails.
Can SMBJ6.0HE3/52 be used in bidirectional configurations?
No, SMBJ6.0HE3/52 is a unidirectional TVS diode, identifiable by its cathode band marking. For bidirectional protection, Vishay offers the SMBJ6.0CA variant (e.g., SMBJ6.0CAHE3/52), which provides symmetrical clamping in both polarities and is designated with a "CA" suffix instead of "A".
SMBJ6.0HE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6V
- Voltage - Breakdown (Min):
- 6.67V
- Voltage - Clamping (Max) @ Ipp:
- 11.4V
- Current - Peak Pulse (10/1000µs):
- 52.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ6.0HE3/52 FAQ
1.How can I place an order for SMBJ6.0HE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ6.0HE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ6.0HE3/52 reliable?
The price and inventory of SMBJ6.0HE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ6.0HE3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ6.0HE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ6.0HE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ6.0HE3/52?
SMBJ6.0HE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ6.0HE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ6.0HE3/52?
For technical support, including SMBJ6.0HE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ6.0HE3/52 requirements.
6.How does Aetrix verify that SMBJ6.0HE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ6.0HE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ6.0HE3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ6.0HE3/52?
All SMBJ6.0HE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ6.0HE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ6.0HE3/52 part is unused and in its original packaging.
Return procedure for SMBJ6.0HE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ6.0HE3/52 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)