Vishay General Semiconductor - Diodes Division SMBJ64A-E3/5B
- Part No.:
- SMBJ64A-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ64A-E3/5B.pdf
- Description:
- TVS DIODE 64VWM 103VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ64A-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 64 V stand-off voltage (VWM), 71.1–78.6 V breakdown voltage (VBR) at 1 mA, 103 V maximum clamping voltage (VC) at 5.8 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in industrial motor drives, telecom power supplies, and automotive body control modules.
For engineers reviewing the SMBJ64A-E3/5B datasheet, SMBJ64A-E3/5B pinout, SMBJ64A-E3/5B application, or SMBJ64A-E3/5B equivalent, this page delivers verified electrical parameters, thermal derating behavior, clamping performance under surge conditions, RoHS-compliant commercial-grade qualification, and direct replacement guidance aligned with Vishay's official SMBJ family specifications.
Technical Context
The SMBJ64A-E3/5B operates as a unidirectional avalanche diode, conducting only when reverse voltage exceeds its VBR threshold to clamp transients. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<1 µA at 64 V), while the low incremental surge resistance enables rapid energy absorption without thermal runaway.
Designed for PCB-level protection against inductive switching spikes and ESD events, it complies with IEC 61000-4-2 (ESD) and IEC 61000-4-4 (EFT) immunity requirements when used with appropriate layout practices. Thermal resistance is 100 °C/W (junction-to-ambient) on standard 0.2" × 0.2" copper pads, supporting continuous operation up to +150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 64 V - Maximum continuous reverse operating voltage before conduction begins; defines safe DC rail margin. |
| VBR (Breakdown Voltage) | 71.1–78.6 V at 1 mA - Confirmed avalanche onset range; ensures reliable triggering above system nominal voltage. |
| VC (Clamping Voltage) | 103 V at 5.8 A (10/1000 µs) - Peak voltage seen by protected circuit during worst-case surge; limits stress on downstream ICs. |
| PPPM (Peak Pulse Power) | 600 W - Sustained transient energy handling capability; validated per Fig. 1 in Vishay Doc. 88392. |
| IPPM (Peak Pulse Current) | 5.8 A - Maximum non-repetitive surge current supported; derived from VC and PPPM (P = V × I). |
| TJmax | +150 °C - Absolute maximum junction temperature; enables use in under-hood automotive and high-ambient industrial environments. |
| RθJA | 100 °C/W - Thermal resistance with recommended pad layout; informs heatsinking requirements for repetitive surge duty. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band marking; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line; conducts surge current to ground when VREV > VBR. |
| Anode (unmarked end) | Reference/return path | Typically tied to system ground or low-impedance return plane; completes clamping path during overvoltage event. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables protection against high-energy transients common in 24 V/48 V industrial power systems without external heat sinking. |
| 103 V clamping voltage at 5.8 A | Keeps protected MOSFET gate drivers and microcontroller I/O pins within safe absolute maximum ratings during ISO 7637-2 Pulse 1/2a events. |
| MSL Level 1 (260 °C peak reflow) | Supports standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements. |
| RoHS-compliant, commercial grade (E3 suffix) | Meets global environmental compliance mandates; suitable for consumer, telecom, and industrial applications without AEC-Q101 overhead. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (<1 ns response), critical for protecting high-speed interface ICs. |
Applications
| Industrial Motor Drives | Telecom Power Supplies |
|---|---|
|
Use Scenario: Protection of 48 V DC bus against inductive kickback from relay coils and solenoid drivers. IC Role / Device Role / Timing Role: Unidirectional TVS placed across bus input to clamp negative-going transients before they reach DC-DC controllers. Use Value: Limits bus voltage excursion to ≤103 V during 5.8 A surges, preventing latch-up or gate oxide damage in synchronous buck controllers. |
Use Scenario: Input-stage surge suppression on AC/DC front-end rectifier outputs feeding telecom base station power modules. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing lightning-induced surges per IEC 61000-4-5 (1.2/50 µs + 8/20 µs combo wave). Use Value: Withstands 600 W pulses without degradation, maintaining <1 µA leakage at 64 V to avoid standby power loss in always-on systems. |
| Automotive Body Control Modules | Consumer Appliance Control Boards |
|
Use Scenario: CAN bus power rail protection in BCMs exposed to load dump and jump-start transients per ISO 16750-2. IC Role / Device Role / Timing Role: Primary clamping device on 12 V supply line upstream of LDOs and microcontrollers. Use Value: Clamps 103 V peak within 1 ns, ensuring downstream 5 V regulators remain within their 16 V absolute max input rating. |
Use Scenario: Overvoltage safeguard on microcontroller GPIO lines connected to push-button interfaces and sensor inputs. IC Role / Device Role / Timing Role: Low-capacitance TVS (CJ ≈ 100 pF typical at 0 V) placed directly at connector entry points. Use Value: Prevents ESD damage per IEC 61000-4-2 ±8 kV contact discharge while adding negligible signal distortion to 10 kHz button scan signals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ64A-M3/5B | Halogen-free, RoHS-compliant variant with identical electrical specs and SMB package. | No difference in circuit function or layout; selected where halogen-free material compliance is mandated. | Choose M3/5B for green manufacturing programs requiring halogen-free bill-of-materials. |
| SMCJ64A-E3/57T | Same VWM/VC but in larger SMC (DO-214AB) package; 1500 W PPPM, higher IPPM (12.3 A), RθJA = 50 °C/W. | Used where higher surge endurance or improved thermal dissipation is required; requires larger PCB footprint. | Choose SMCJ64A-E3/57T when system-level testing reveals repeated 600 W surges exceed SMBJ64A-E3/5B lifetime rating. |
Compared with SMBJ64A-M3/5B, SMBJ64A-E3/5B offers identical protection performance with standard RoHS compliance; compared with SMCJ64A-E3/57T, it trades surge capacity and thermal margin for compact size and lower cost in space-constrained designs.
Availability
SMBJ64A-E3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automotive body control modules requiring stable component supply, full traceability, and long-term production support.
Supply support for SMBJ64A-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and application-specific optimization.
The SMBJ series is engineered for high-reliability transient suppression in harsh environments - targeting industrial automation, transportation, and communications infrastructure where consistent clamping performance and long-term stability are critical.
FAQ
What is the maximum clamping voltage of SMBJ64A-E3/5B at its rated peak pulse current?
The SMBJ64A-E3/5B has a maximum clamping voltage (VC) of 103 V when subjected to its specified peak pulse current of 5.8 A with a 10/1000 µs waveform. This value is measured per Vishay Document 88392 and defines the upper voltage limit imposed on protected circuits during surge events. The SMBJ64A-E3/5B maintains this clamping performance across its qualified operating temperature range of -55 °C to +150 °C.
Is SMBJ64A-E3/5B suitable for automotive applications requiring AEC-Q101 qualification?
No, SMBJ64A-E3/5B is a commercial-grade part with RoHS compliance but not AEC-Q101 qualified. For automotive use, Vishay offers the SMBJ64AHE3_B variant (with HE3 suffix), which carries AEC-Q101 qualification and is tested to automotive reliability standards. The SMBJ64A-E3/5B remains appropriate for non-safety-critical industrial and telecom applications where AEC-Q101 is not mandated.
What is the thermal resistance of SMBJ64A-E3/5B, and how does it affect PCB layout?
The SMBJ64A-E3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimum recommended pad layout per Vishay's DO-214AA outline. To maintain safe junction temperatures under repetitive surge conditions, designers must ensure adequate copper area and avoid excessive trace length between the SMBJ64A-E3/5B cathode/anode and their respective ground/power planes.
How does the breakdown voltage tolerance of SMBJ64A-E3/5B impact circuit design margin?
The SMBJ64A-E3/5B exhibits a breakdown voltage (VBR) range of 71.1 V to 78.6 V at 1 mA test current, representing ±5.5% tolerance around the nominal 74.85 V center point. Designers must ensure that the maximum expected steady-state voltage on the protected line remains at least 10% below the minimum VBR (i.e., <64 V) to prevent premature conduction and leakage-related power loss. This tolerance directly informs the selection of VWM relative to system rail voltage.
Can SMBJ64A-E3/5B be used in bidirectional protection configurations?
No, SMBJ64A-E3/5B is a unidirectional TVS diode, identifiable by its cathode band marking. For bidirectional transient suppression, Vishay specifies the SMBJ64CA variant (e.g., SMBJ64CA-E3/5B), which provides symmetrical clamping in both polarities and omits the polarity band. Using SMBJ64A-E3/5B in a bidirectional configuration would result in forward conduction and potential failure during positive transients.
SMBJ64A-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 64V
- Voltage - Breakdown (Min):
- 71.1V
- Voltage - Clamping (Max) @ Ipp:
- 103V
- Current - Peak Pulse (10/1000µs):
- 5.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ64A-E3/5B FAQ
1.How can I place an order for SMBJ64A-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ64A-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ64A-E3/5B reliable?
The price and inventory of SMBJ64A-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ64A-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ64A-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ64A-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ64A-E3/5B?
SMBJ64A-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ64A-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ64A-E3/5B?
For technical support, including SMBJ64A-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ64A-E3/5B requirements.
6.How does Aetrix verify that SMBJ64A-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ64A-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ64A-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ64A-E3/5B?
All SMBJ64A-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ64A-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ64A-E3/5B part is unused and in its original packaging.
Return procedure for SMBJ64A-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ64A-E3/5B Tags

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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