Vishay General Semiconductor - Diodes Division SMBJ6.5AHE3_B/I
- Part No.:
- SMBJ6.5AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ6.5AHE3_B/I.pdf
- Description:
- 600W,6.5V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ6.5AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 6.5 V stand-off voltage (VWM), 7.22–7.98 V breakdown voltage (VBR) at 10 mA, 11.2 V maximum clamping voltage (VC) at 53.6 A peak pulse current (IPPM), and 600 W peak pulse power (PPPM) with 10/1000 µs waveform - deployed in automotive sensor interfaces and industrial I/O protection.
For engineers reviewing the SMBJ6.5AHE3_B/I datasheet, SMBJ6.5AHE3_B/I pinout, SMBJ6.5AHE3_B/I application, or SMBJ6.5AHE3_B/I equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and polarity marking (cathode band), enabling rapid selection for robust overvoltage protection in space-constrained PCB layouts.
Technical Context
This TVS diode operates as a unidirectional clamping device: reverse-biased during normal operation (blocking up to 6.5 V), then avalanche-triggering within nanoseconds when transient voltage exceeds VBR to divert surge energy away from downstream ICs. Its glass-passivated junction ensures stable leakage (<500 µA at VWM) and low incremental surge resistance.
The SMBJ6.5AHE3_B/I is rated for 600 W peak pulse power under standardized 10/1000 µs waveform, with derating above 25 °C per Fig. 2, and supports repetitive surges at 0.01 % duty cycle. It meets MSL Level 1 per J-STD-020 and is AEC-Q101 qualified - confirmed by HE3 suffix and documentation revision 09-Jan-2024 (Doc. #88392).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 6.5 V - maximum continuous reverse operating voltage before clamping begins; sets safe margin below system rail voltage. |
| VBR min/max | 7.22 V / 7.98 V at IT = 10 mA - guaranteed avalanche initiation window; defines minimum overvoltage threshold for protection activation. |
| VC @ IPPM | 11.2 V at 53.6 A - clamped voltage seen by protected circuit during worst-case 10/1000 µs surge; determines stress on downstream components. |
| PPPM | 600 W - peak transient power it can absorb without failure; enables protection against IEC 61000-4-5 Level 4 surges (4 kV) in properly designed layouts. |
| ID @ VWM | ≤500 µA - reverse leakage at stand-off voltage; ensures minimal standby power loss and signal integrity on high-impedance lines. |
| TJ max | +150 °C - maximum junction temperature; supports operation in under-hood automotive and industrial environments. |
| RθJA | 100 °C/W - thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads; informs heatsinking requirements for sustained surge duty. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode identified by molded band at one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal (for unidirectional operation) | Connected to ground or lower-potential node; completes clamping path during reverse transient. |
| Cathode | Reverse-biased terminal (marked with band) | Connected to protected line (e.g., 5 V rail or sensor output); avalanche conduction initiates here during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control modules and ADAS sensor interfaces per stress test requirements. |
| 600 W peak pulse power | Handles IEC 61000-4-5 combination wave surges up to 4 kV without degradation when mounted on recommended 5 mm × 5 mm copper pads. |
| Fast response time | Sub-nanosecond avalanche turn-on ensures protection before sensitive ICs experience damaging overvoltage. |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes voltage overshoot during clamping - critical for safeguarding 3.3 V or 5 V logic-level components. |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without baking; compatible with automated assembly at peak temperature ≤260 °C. |
Applications
| Automotive Sensor Protection | Industrial PLC I/O Protection |
|---|---|
|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from load dump and ISO 7637-2 pulses in vehicle ECUs. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between signal line and chassis ground, triggered within <1 ns upon voltage exceeding 7.22 V. Use Value: Limits transient voltage to ≤11.2 V during 53.6 A surge, preventing latch-up or gate oxide damage in 5 V-tolerant transceivers. |
Use Scenario: Safeguarding digital input channels of programmable logic controllers against field-induced surges from relay coils and motor drives. IC Role / Device Role / Timing Role: Standoff protector on 24 V DC input lines, absorbing repetitive 10/1000 µs transients up to 600 W without parameter drift. Use Value: Maintains ≤500 µA leakage at 24 V nominal, ensuring clean logic-level detection while surviving >100,000 surge events per JESD22-A114. |
| Consumer Power Adapter Output | Telecom Ethernet Port Protection |
|
Use Scenario: Secondary-side overvoltage clamp on 5 V/9 V USB-C PD adapter outputs exposed to hot-plug and cable discharge events. IC Role / Device Role / Timing Role: Fast-acting shunt element across VBUS and GND, activated before downstream USB controller ICs exceed absolute maximum ratings. Use Value: Clamps to 11.2 V at 53.6 A, limiting stress on USB-PD sink ICs rated for 6 V absolute max - validated per IEC 61000-4-2 Level 4 (15 kV air). |
Use Scenario: Primary-stage protection on 10/100BASE-TX Ethernet PHY lines subjected to lightning-induced surges via PoE injectors or long cable runs. IC Role / Device Role / Timing Role: Unidirectional TVS on MDI pairs referenced to local ground, coordinated with common-mode chokes to suppress differential-mode transients. Use Value: Withstands 600 W peak pulse without parametric shift, preserving signal integrity up to 100 MHz while meeting GR-1089-CORE telecom surge immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ6.5A-E3/52 | Commercial-grade (non-AEC-Q101), same VWM/VBR/VC/PPPM, identical SMB package and pinout. | Lacks automotive qualification; suitable for consumer/industrial designs not requiring AEC-Q101 compliance. | Select when cost sensitivity outweighs automotive reliability requirements and lifecycle traceability is not mandated. |
| SMCJ6.5AHE3_A/H | Same AEC-Q101 qualification but in larger SMC (DO-214AB) package; higher IPPM (87.5 A) and same VC (11.2 V). | Better thermal performance (RθJA = 50 °C/W) and higher surge endurance; requires larger PCB footprint. | Choose when system-level surge testing exceeds 600 W or extended thermal cycling demands lower junction temperature rise. |
Compared with SMBJ6.5AHE3_B/I, the SMBJ6.5A-E3/52 offers identical electrical protection at lower cost but no automotive qualification, while the SMCJ6.5AHE3_A/H provides superior surge handling and thermal margin in a larger footprint - enabling trade-offs between board space, qualification, and ruggedness.
Availability
SMBJ6.5AHE3_B/I is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial PLC I/O modules, and consumer power adapter outputs requiring stable component supply with full AEC-Q101 traceability and RoHS compliance.
Supply support for SMBJ6.5AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, precision, and automotive-grade validation.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where robustness and qualification are mandatory.
FAQ
What is the clamping voltage of SMBJ6.5AHE3_B/I and how does it protect downstream circuits?
The SMBJ6.5AHE3_B/I has a maximum clamping voltage (VC) of 11.2 V at 53.6 A peak pulse current (IPPM) under 10/1000 µs waveform. This means that during a surge event, the device limits the voltage seen by downstream components to ≤11.2 V - well below typical 12 V or 15 V absolute maximum ratings of microcontrollers and interface ICs. Its sub-nanosecond response ensures clamping occurs before damaging overvoltage propagates, preserving signal integrity and preventing latch-up or permanent damage in systems like automotive sensor nodes and industrial I/O.
Is SMBJ6.5AHE3_B/I AEC-Q101 qualified and what does that mean for automotive use?
Yes, SMBJ6.5AHE3_B/I is AEC-Q101 qualified, as confirmed by its HE3 suffix and Vishay document #88392 (revision 09-Jan-2024). This qualification validates performance across temperature cycling, humidity bias, mechanical shock, and accelerated life testing required for automotive electronics. It enables use in engine control units, body control modules, and ADAS sensors where reliability under vibration, thermal extremes (–40 to +125 °C ambient), and long service life (>15 years) is mandatory - unlike commercial-grade alternatives such as SMBJ6.5A-E3/52.
What is the standoff voltage (VWM) of SMBJ6.5AHE3_B/I and why is it important for circuit design?
The standoff voltage (VWM) of SMBJ6.5AHE3_B/I is 6.5 V - the maximum continuous reverse voltage it blocks without entering avalanche conduction. This value must be selected ≥10–15 % above the normal operating voltage of the protected line (e.g., 5 V rail) to avoid leakage-induced power loss or false triggering. At 6.5 V, SMBJ6.5AHE3_B/I ensures minimal reverse leakage (≤500 µA), preserving signal fidelity on high-impedance sensor outputs and enabling reliable operation in battery-powered or low-power IoT edge devices where quiescent current matters.
How does the SMB (DO-214AA) package of SMBJ6.5AHE3_B/I impact PCB layout and thermal performance?
The SMB (DO-214AA) package of SMBJ6.5AHE3_B/I measures 4.57 mm × 3.94 mm × 2.20 mm and uses standard SMT reflow profiles (MSL Level 1, peak 260 °C). Its thermal resistance junction-to-ambient (RθJA) is 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads - meaning a 5 W steady-state dissipation would raise junction temperature by 500 °C (beyond rating), so it's intended for transient-only duty. Layout best practices include symmetric pad geometry, thermal vias under pads, and avoiding nearby heat sources to maintain safe operation within its –55 to +150 °C junction range.
Can SMBJ6.5AHE3_B/I replace bidirectional TVS diodes like SMBJ6.5CA in circuit designs?
No - SMBJ6.5AHE3_B/I is unidirectional and cannot directly replace bidirectional types like SMBJ6.5CA. The latter conducts in both directions and is used where AC signals or floating references require symmetrical clamping (e.g., RS-485, USB D+/D–). SMBJ6.5AHE3_B/I only clamps reverse transients and conducts forward current like a rectifier; using it in place of a bidirectional device leaves positive-going transients unprotected. For bidirectional protection, select SMBJ6.5CAHE3_B/I or verify system polarity constraints before substitution - the cathode band marking on SMBJ6.5AHE3_B/I confirms its unidirectional orientation.
SMBJ6.5AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.5V
- Voltage - Breakdown (Min):
- 7.22V
- Voltage - Clamping (Max) @ Ipp:
- 11.2V
- Current - Peak Pulse (10/1000µs):
- 53.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ6.5AHE3_B/I FAQ
1.How can I place an order for SMBJ6.5AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ6.5AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ6.5AHE3_B/I reliable?
The price and inventory of SMBJ6.5AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ6.5AHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ6.5AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ6.5AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ6.5AHE3_B/I?
SMBJ6.5AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ6.5AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ6.5AHE3_B/I?
For technical support, including SMBJ6.5AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ6.5AHE3_B/I requirements.
6.How does Aetrix verify that SMBJ6.5AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ6.5AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ6.5AHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ6.5AHE3_B/I?
All SMBJ6.5AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ6.5AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ6.5AHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ6.5AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ6.5AHE3_B/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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