Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ6.5D-M3/I

Part No.:
SMBJ6.5D-M3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ6.5D-M3/I.pdf
Description:
TVS DIODE 6.5VWM 11VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,375

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ6.5D-M3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, with 6.5 V stand-off voltage (VWM), 7.33–7.87 V breakdown voltage (VBR) at 10 mA, 11.0 V clamping voltage (VC) at 54.5 A peak pulse current, and 600 W peak pulse power rating per 10/1000 μs waveform. It protects MOSFETs and signal lines in industrial sensor interfaces against inductive switching transients.

For engineers reviewing the SMBJ6.5D-M3/I datasheet, SMBJ6.5D-M3/I pinout, SMBJ6.5D-M3/I application, or SMBJ6.5D-M3/I equivalent, key selection criteria include unidirectional polarity, ±3.5 % VBR tolerance, low 500 μA max reverse leakage at VWM, M3 halogen-free RoHS-compliant construction, and compatibility with automated SMT placement on standard PCB pad layouts.

Technical Context

This TVS diode operates as a clamping device that enters avalanche conduction when reverse voltage exceeds its specified breakdown range. Its low incremental surge resistance ensures minimal voltage overshoot during transient events, while fast response time (<1 ns) enables protection of sensitive downstream ICs before damage occurs.

The SMBJ6.5D-M3/I is rated for 150 °C maximum junction temperature and meets J-STD-020 MSL Level 1 with 260 °C reflow peak. Its thermal resistance junction-to-ambient is 125 °C/W on minimum recommended pad layout, supporting reliable operation in compact industrial and telecom PCB designs without forced cooling.

Key Specifications

ParameterValue and Actual Design Meaning
VWM6.5 V - maximum continuous reverse operating voltage before clamping begins
VBR min/max7.33 V / 7.87 V at 10 mA - tight ±3.5 % tolerance ensures predictable turn-on across production lots
VC @ IPPM11.0 V at 54.5 A - clamping voltage limits stress on protected circuitry during 600 W transient events
PPPM600 W - peak pulse power handling capability with 10/1000 μs waveform, 0.01 % duty cycle
ID @ VWM≤500 μA - low leakage preserves signal integrity and minimizes standby power loss
PackageSMB (DO-214AA) - industry-standard surface-mount outline compatible with automated pick-and-place
PolarityUnidirectional - cathode indicated by band; blocks forward current, clamps reverse transients

Pinout & Package

Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, halogen-free and RoHS-compliant (M3 suffix), MSL Level 1, 260 °C peak reflow.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminalConnected to lower-potential side of protected line; conducts only during forward bias
Cathode (banded end)Avalanche clamping terminalConnected to higher-potential side; initiates clamping when reverse voltage exceeds VBR

Key Features

FeatureDesign Value
±3.5 % VBR toleranceEnables precise coordination with system overvoltage thresholds without margin stacking
600 W peak pulse powerHandles high-energy transients from relay coil decay or ESD events without degradation
Low 500 μA max ID at VWMMinimizes quiescent current draw in always-on sensor or communication circuits
MSL Level 1 ratingSupports single-pass reflow assembly without moisture-related popcorn failure risk
Halogen-free M3 constructionMeets industrial environmental compliance requirements including RoHS and JEDEC JESD201 Class 2 whisker resistance

Applications

Industrial Sensor Signal ProtectionDC Power Rail Clamping

Use Scenario: Protecting analog output lines (e.g., 4–20 mA or 0–10 V) of pressure/temperature sensors exposed to motor drive noise in factory automation cabinets.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and ground, clamping induced surges before they reach ADC input or op-amp buffer.

Use Value: Limits transient voltage to ≤11.0 V, preventing latch-up or permanent damage to precision signal conditioning circuitry.

Use Scenario: Safeguarding 12 V DC input rails feeding microcontrollers and CAN transceivers in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Mounted across rail-to-ground to clamp load dump spikes up to ISO 7637-2 Pulse 5a (≈35 V, 100 ms).

Use Value: Absorbs 600 W pulses without failure, maintaining rail integrity during vehicle-grade power disturbances.

Telecom Line Interface ProtectionMOSFET Gate Drive Protection

Use Scenario: Shielding RS-485 transceiver I/O pins from lightning-induced surges on outdoor data links in cellular base station remote units.

IC Role / Device Role / Timing Role: Paired unidirectional TVS devices on A/B differential lines, referenced to local ground plane.

Use Value: Fast <1 ns response and 11.0 V clamping prevent transceiver latch-up during multi-kV surge events.

Use Scenario: Preventing gate oxide rupture in N-channel power MOSFETs driven by PWM controllers in DC-DC converters.

IC Role / Device Role / Timing Role: Placed between gate and source to clamp Miller-induced voltage spikes during high dV/dt switching transitions.

Use Value: Low clamping voltage (11.0 V) ensures gate remains within safe SOA, avoiding unintended turn-on or dielectric breakdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ6.5A-M3/ISame VWM (6.5 V), but tighter ±2.5 % VBR tolerance (7.43–7.77 V); otherwise identical ratings and packagePreferred where tighter clamping threshold consistency is required across temperature and lifetimeSelect SMBJ6.5A-M3/I if design requires reduced VBR variation; SMBJ6.5D-M3/I offers cost-optimized performance for general-purpose use.
SMCJ6.5A-M3Higher 1500 W PPPM rating, same VWM/VBR, but larger SMC (DO-214AB) package with different pad layout and thermal resistanceSuitable for higher-energy transients where board space allows larger footprint and improved thermal dissipationChoose SMCJ6.5A-M3 only when 600 W is insufficient and PCB layout permits SMC package; SMBJ6.5D-M3/I fits tighter spaces with adequate surge margin.

Compared with SMBJ6.5A-M3/I, the SMBJ6.5D-M3/I trades tighter VBR tolerance for broader manufacturing acceptance and lower cost, while versus SMCJ6.5A-M3 it sacrifices peak power headroom for smaller PCB area and compatible SMT process flow.

Availability

SMBJ6.5D-M3/I is available at Aetrix Electronics and suitable for industrial sensor interfaces, telecom line protection, DC power rail clamping, and MOSFET gate drive circuits requiring stable component supply and long-term lifecycle support.

Supply support for SMBJ6.5D-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and industrial-grade qualification.

The SMBJ series is designed specifically for robust transient suppression in harsh environments-targeting automotive subsystems, industrial controls, and telecom infrastructure where repeatable clamping performance and long-term stability are critical.

FAQ

What is the maximum clamping voltage of the SMBJ6.5D-M3/I under peak pulse conditions?

The SMBJ6.5D-M3/I has a maximum clamping voltage (VC) of 11.0 V when subjected to its rated peak pulse current of 54.5 A using the standard 10/1000 μs waveform. This value is guaranteed per the Vishay datasheet and reflects worst-case voltage seen by protected circuitry during transient events, making SMBJ6.5D-M3/I suitable for safeguarding 5 V and 3.3 V logic interfaces when properly applied with appropriate series impedance.

Does the SMBJ6.5D-M3/I meet RoHS and halogen-free requirements?

Yes, the SMBJ6.5D-M3/I carries the M3 suffix, which certifies it as halogen-free, RoHS-compliant, and qualified to JEDEC JESD201 Class 2 for tin whisker resistance. Its molding compound meets UL 94 V-0 flammability rating, and terminals are matte tin plated per J-STD-002 and JESD22-B102, confirming full compliance for industrial and telecom applications requiring strict material declarations.

Can the SMBJ6.5D-M3/I be used in bidirectional transient protection applications?

No, the SMBJ6.5D-M3/I is a unidirectional TVS diode, identified by the "D" suffix and marked with a cathode band. For bidirectional protection, Vishay specifies the "CD" suffix (e.g., SMBJ6.5CD). Using SMBJ6.5D-M3/I in bidirectional configurations risks forward conduction during negative transients, potentially causing failure or improper clamping behavior.

What is the thermal resistance junction-to-ambient for SMBJ6.5D-M3/I on standard PCB layout?

The SMBJ6.5D-M3/I exhibits a typical junction-to-ambient thermal resistance (RθJA) of 125 °C/W when mounted on the minimum recommended pad layout per Vishay's datasheet. This value assumes standard FR-4 board with defined copper area; derating curves in Figure 5 must be applied for ambient temperatures above 25 °C to maintain safe junction temperature below 150 °C.

How does the SMBJ6.5D-M3/I compare to SMAJ6.5A in terms of surge capability?

The SMBJ6.5D-M3/I delivers 600 W peak pulse power (PPPM) with a 10/1000 μs waveform, whereas the SMAJ6.5A is rated for only 400 W. The SMBJ package also provides lower thermal resistance than SMAJ, enabling more consistent clamping performance under repetitive surge conditions. Thus, SMBJ6.5D-M3/I offers superior energy handling and thermal robustness for demanding industrial applications.

SMBJ6.5D-M3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
6.5V
Voltage - Breakdown (Min):
7.33V
Voltage - Clamping (Max) @ Ipp:
11V
Current - Peak Pulse (10/1000µs):
54.5A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ6.5D-M3/I FAQ

1.How can I place an order for SMBJ6.5D-M3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ6.5D-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ6.5D-M3/I reliable?

The price and inventory of SMBJ6.5D-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ6.5D-M3/I is usually 5 days.

3.What payment methods are accepted for SMBJ6.5D-M3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ6.5D-M3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ6.5D-M3/I?

SMBJ6.5D-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ6.5D-M3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ6.5D-M3/I?

For technical support, including SMBJ6.5D-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ6.5D-M3/I requirements.

6.How does Aetrix verify that SMBJ6.5D-M3/I is sourced from the original manufacturer or authorized distributors?

All SMBJ6.5D-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ6.5D-M3/I meets industry standards.

7.What is the process for return or replacement of SMBJ6.5D-M3/I?

All SMBJ6.5D-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ6.5D-M3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ6.5D-M3/I part is unused and in its original packaging.

Return procedure for SMBJ6.5D-M3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ6.5D-M3/I Tags

  • SMBJ6.5D-M3/I
  • SMBJ6.5D-M3/I PDF
  • SMBJ6.5D-M3/I Datasheet
  • SMBJ6.5D-M3/I Specifications
  • SMBJ6.5D-M3/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ6.5D-M3/I
  • Buy SMBJ6.5D-M3/I
  • SMBJ6.5D-M3/I Price
  • SMBJ6.5D-M3/I Distributor
  • SMBJ6.5D-M3/I Supplier
  • SMBJ6.5D-M3/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER