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Vishay General Semiconductor - Diodes Division SMBJ70AHE3_A/H

Part No.:
SMBJ70AHE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ70AHE3_A/H.pdf
Description:
TVS DIODE 70VWM 113VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,162

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Product details

Overview

SMBJ70AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 70 V stand-off voltage (VWM), 77.8–86.0 V breakdown voltage (VBR) at 1 mA, 113 V maximum clamping voltage (VC) at 5.3 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive power supply inputs and industrial sensor interfaces.

For engineers reviewing the SMBJ70AHE3_A/H datasheet, SMBJ70AHE3_A/H pinout, SMBJ70AHE3_A/H application, or SMBJ70AHE3_A/H equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and RoHS-compliant packaging details essential for ESD/surge protection design-in.

Technical Context

This unidirectional TVS diode operates as a clamping device that remains non-conductive below 70 V and rapidly transitions to low-impedance conduction above its 77.8 V minimum breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low incremental surge resistance, enabling precise voltage limiting during transients induced by inductive switching or lightning surges.

The SMBJ70AHE3_A/H is rated for 600 W peak pulse power (10/1000 µs), supports 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), and exhibits a 0.105 %/°C temperature coefficient of VBR - critical for maintaining clamping accuracy across automotive (-40 to +125 °C ambient) and industrial operating ranges.

Key Specifications

Parameter Value and Actual Design Meaning
VWM (Stand-off Voltage) 70 V - maximum continuous reverse voltage before significant leakage; defines safe operating margin for 72 V nominal DC bus protection.
VBR (Breakdown Voltage) 77.8–86.0 V at 1 mA - guaranteed conduction onset range; ensures reliable triggering without premature clamping.
VC (Clamping Voltage) 113 V at IPPM = 5.3 A - peak voltage seen by protected circuit during 600 W transient; determines downstream component voltage stress.
PPPM (Peak Pulse Power) 600 W (10/1000 µs) - energy-handling capacity for standardized surge events; validates compliance with IEC 61000-4-5 Level 3.
TJ max. +150 °C - maximum junction temperature; enables operation in under-hood automotive environments with derated power above 25 °C.
RθJA 100 °C/W - thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads; informs PCB thermal layout requirements.
AEC-Q101 Qualified Yes - certified for automotive-grade reliability per stress test conditions including HTRB, HTGB, and temperature cycling.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, MSL Level 1 (JEDEC J-STD-020), 260 °C reflow peak. Cathode indicated by band marking.

Pin/Terminal Circuit Role Design Meaning
Anode Low-side connection point Connected to ground or return path; completes clamping loop when cathode is tied to protected line.
Cathode High-side connection point Connected to protected line (e.g., 72 V rail); conducts surge current to ground during overvoltage event.

Key Features

Feature Design Value
600 W peak pulse power (10/1000 µs) Supports IEC 61000-4-5 surge immunity up to 1 kV open-circuit / 0.5 kV direct-coupled in industrial control systems.
AEC-Q101 qualified (HE3 suffix) Validated for automotive power electronics including body control modules and ADAS sensor power supplies.
Glass passivated junction Ensures long-term VBR stability and low leakage (<1 µA at 70 V), critical for low-power always-on circuits.
Low profile SMB package Enables automated placement and high-density PCB layouts while maintaining 5.0 mm × 5.0 mm thermal pad area for heat dissipation.
RoHS-compliant & halogen-free option available Meets EU RoHS Directive 2011/65/EU and JEDEC J-STD-208 material restrictions for green manufacturing.

Applications

Automotive Power Input Protection Industrial Sensor Signal Line Protection

Use Scenario: Protecting 72 V battery-fed ECUs against load dump transients (ISO 7637-2 Pulse 5a) and alternator overshoot.

IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between input rail and chassis ground.

Use Value: Limits voltage to ≤113 V during 600 W surges, preventing damage to upstream DC/DC converters and microcontrollers.

Use Scenario: Shielding 4–20 mA analog sensor outputs from ESD (IEC 61000-4-2 ±8 kV contact) and cable-induced surges.

IC Role / Device Role / Timing Role: Low-capacitance TVS connected across signal and return lines near connector entry.

Use Value: Clamps transients within <1 ns while adding <1 pF parasitic capacitance - preserving signal integrity up to 1 MHz bandwidth.

Telecom DC Power Feeds Consumer Device USB Power Ports

Use Scenario: Safeguarding -48 V telecom rectifier outputs against lightning-induced surges on outdoor plant wiring.

IC Role / Device Role / Timing Role: Primary-stage TVS on feed line prior to POL regulators and hot-swap controllers.

Use Value: Withstands repetitive 10/1000 µs surges up to 600 W at 0.01% duty cycle, ensuring multi-year field reliability.

Use Scenario: Overvoltage suppression on 5 V USB VBUS lines exposed to adapter faults or miswiring.

IC Role / Device Role / Timing Role: Secondary protection after internal PMIC, placed adjacent to USB connector.

Use Value: Fast response (<1 ns) and low clamping (113 V) prevent latch-up in USB controller ICs during 100 V surge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ70AHM3_A/H Halogen-free variant with identical electrical specs and AEC-Q101 qualification; same SMB package and pinout. No functional difference; selected where halogen-free compliance is mandated by OEM or regional environmental regulations. Direct material substitution when halogen-free bill-of-materials is required; no redesign needed.
SMAJ70AHE3/A Lower 400 W PPPM rating, SMA (DO-214AC) package (smaller footprint, higher RθJA = 140 °C/W), same VWM/VBR/VC. Reduced surge handling; suitable only for lower-energy transients (e.g., IEC 61000-4-2 ESD, not IEC 61000-4-5 surges). Use only where space constraints prohibit SMB and surge threat level is limited to ESD or low-energy switching noise.

Compared with SMBJ70AHE3_A/H, the SMBJ70AHM3_A/H offers identical protection performance with halogen-free construction, while the SMAJ70AHE3/A trades 33% lower surge power and higher thermal resistance for smaller board area - requiring careful threat-level validation before substitution.

Availability

SMBJ70AHE3_A/H is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interface protection, and telecom DC feed applications requiring stable component supply, AEC-Q101 qualification, and RoHS compliance.

Supply support for SMBJ70AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.

The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where robustness against load dump, ESD, and lightning surges is mandatory.

FAQ

What is the clamping voltage of SMBJ70AHE3_A/H at its rated peak pulse current?

The SMBJ70AHE3_A/H has a maximum clamping voltage (VC) of 113 V at its specified peak pulse current (IPPM) of 5.3 A, measured using the 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during a full-rated 600 W transient event, and is confirmed in the Vishay datasheet Document Number 88392, Table on page 2.

Is SMBJ70AHE3_A/H qualified for automotive applications?

Yes, SMBJ70AHE3_A/H is AEC-Q101 qualified, as indicated by the "HE3" suffix in its part number. This certification covers stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling - validating its suitability for under-hood and chassis-mounted automotive electronics per Vishay's ordering information table on page 3.

What is the thermal resistance of SMBJ70AHE3_A/H, and how does it affect PCB layout?

The SMBJ70AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value requires adequate copper pour and thermal vias beneath the SMB package to maintain junction temperature below +150 °C during repeated surge events - especially critical in enclosed automotive enclosures.

How does the breakdown voltage range of SMBJ70AHE3_A/H impact system design margin?

The SMBJ70AHE3_A/H has a guaranteed breakdown voltage (VBR) range of 77.8 V to 86.0 V at 1 mA test current. This ±5% tolerance ensures reliable turn-on above the 70 V stand-off voltage while avoiding false triggering during normal 72 V rail ripple; designers must verify that downstream components tolerate up to 86.0 V during marginal overvoltage conditions.

What is the maximum reverse leakage current of SMBJ70AHE3_A/H at its stand-off voltage?

The SMBJ70AHE3_A/H exhibits a maximum reverse leakage current (ID) of 1.0 µA at its 70 V stand-off voltage (VWM), measured at TA = 25 °C. This ultra-low leakage preserves efficiency in always-on systems such as automotive telematics modules and ensures minimal power loss in battery-backed sensor nodes.

SMBJ70AHE3_A/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
70V
Voltage - Breakdown (Min):
77.8V
Voltage - Clamping (Max) @ Ipp:
113V
Current - Peak Pulse (10/1000µs):
5.3A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ70AHE3_A/H FAQ

1.How can I place an order for SMBJ70AHE3_A/H through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ70AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ70AHE3_A/H reliable?

The price and inventory of SMBJ70AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ70AHE3_A/H is usually 5 days.

3.What payment methods are accepted for SMBJ70AHE3_A/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ70AHE3_A/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ70AHE3_A/H?

SMBJ70AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ70AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ70AHE3_A/H?

For technical support, including SMBJ70AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ70AHE3_A/H requirements.

6.How does Aetrix verify that SMBJ70AHE3_A/H is sourced from the original manufacturer or authorized distributors?

All SMBJ70AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ70AHE3_A/H meets industry standards.

7.What is the process for return or replacement of SMBJ70AHE3_A/H?

All SMBJ70AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ70AHE3_A/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ70AHE3_A/H part is unused and in its original packaging.

Return procedure for SMBJ70AHE3_A/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ70AHE3_A/H Tags

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