Vishay General Semiconductor - Diodes Division SMBJ70AHE3_A/H
- Part No.:
- SMBJ70AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ70AHE3_A/H.pdf
- Description:
- TVS DIODE 70VWM 113VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:9,162
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ70AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 70 V stand-off voltage (VWM), 77.8–86.0 V breakdown voltage (VBR) at 1 mA, 113 V maximum clamping voltage (VC) at 5.3 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive power supply inputs and industrial sensor interfaces.
For engineers reviewing the SMBJ70AHE3_A/H datasheet, SMBJ70AHE3_A/H pinout, SMBJ70AHE3_A/H application, or SMBJ70AHE3_A/H equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and RoHS-compliant packaging details essential for ESD/surge protection design-in.
Technical Context
This unidirectional TVS diode operates as a clamping device that remains non-conductive below 70 V and rapidly transitions to low-impedance conduction above its 77.8 V minimum breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low incremental surge resistance, enabling precise voltage limiting during transients induced by inductive switching or lightning surges.
The SMBJ70AHE3_A/H is rated for 600 W peak pulse power (10/1000 µs), supports 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), and exhibits a 0.105 %/°C temperature coefficient of VBR - critical for maintaining clamping accuracy across automotive (-40 to +125 °C ambient) and industrial operating ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 70 V - maximum continuous reverse voltage before significant leakage; defines safe operating margin for 72 V nominal DC bus protection. |
| VBR (Breakdown Voltage) | 77.8–86.0 V at 1 mA - guaranteed conduction onset range; ensures reliable triggering without premature clamping. |
| VC (Clamping Voltage) | 113 V at IPPM = 5.3 A - peak voltage seen by protected circuit during 600 W transient; determines downstream component voltage stress. |
| PPPM (Peak Pulse Power) | 600 W (10/1000 µs) - energy-handling capacity for standardized surge events; validates compliance with IEC 61000-4-5 Level 3. |
| TJ max. | +150 °C - maximum junction temperature; enables operation in under-hood automotive environments with derated power above 25 °C. |
| RθJA | 100 °C/W - thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads; informs PCB thermal layout requirements. |
| AEC-Q101 Qualified | Yes - certified for automotive-grade reliability per stress test conditions including HTRB, HTGB, and temperature cycling. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, MSL Level 1 (JEDEC J-STD-020), 260 °C reflow peak. Cathode indicated by band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or return path; completes clamping loop when cathode is tied to protected line. |
| Cathode | High-side connection point | Connected to protected line (e.g., 72 V rail); conducts surge current to ground during overvoltage event. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 surge immunity up to 1 kV open-circuit / 0.5 kV direct-coupled in industrial control systems. |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive power electronics including body control modules and ADAS sensor power supplies. |
| Glass passivated junction | Ensures long-term VBR stability and low leakage (<1 µA at 70 V), critical for low-power always-on circuits. |
| Low profile SMB package | Enables automated placement and high-density PCB layouts while maintaining 5.0 mm × 5.0 mm thermal pad area for heat dissipation. |
| RoHS-compliant & halogen-free option available | Meets EU RoHS Directive 2011/65/EU and JEDEC J-STD-208 material restrictions for green manufacturing. |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 72 V battery-fed ECUs against load dump transients (ISO 7637-2 Pulse 5a) and alternator overshoot. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between input rail and chassis ground. Use Value: Limits voltage to ≤113 V during 600 W surges, preventing damage to upstream DC/DC converters and microcontrollers. |
Use Scenario: Shielding 4–20 mA analog sensor outputs from ESD (IEC 61000-4-2 ±8 kV contact) and cable-induced surges. IC Role / Device Role / Timing Role: Low-capacitance TVS connected across signal and return lines near connector entry. Use Value: Clamps transients within <1 ns while adding <1 pF parasitic capacitance - preserving signal integrity up to 1 MHz bandwidth. |
| Telecom DC Power Feeds | Consumer Device USB Power Ports |
|
Use Scenario: Safeguarding -48 V telecom rectifier outputs against lightning-induced surges on outdoor plant wiring. IC Role / Device Role / Timing Role: Primary-stage TVS on feed line prior to POL regulators and hot-swap controllers. Use Value: Withstands repetitive 10/1000 µs surges up to 600 W at 0.01% duty cycle, ensuring multi-year field reliability. |
Use Scenario: Overvoltage suppression on 5 V USB VBUS lines exposed to adapter faults or miswiring. IC Role / Device Role / Timing Role: Secondary protection after internal PMIC, placed adjacent to USB connector. Use Value: Fast response (<1 ns) and low clamping (113 V) prevent latch-up in USB controller ICs during 100 V surge events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ70AHM3_A/H | Halogen-free variant with identical electrical specs and AEC-Q101 qualification; same SMB package and pinout. | No functional difference; selected where halogen-free compliance is mandated by OEM or regional environmental regulations. | Direct material substitution when halogen-free bill-of-materials is required; no redesign needed. |
| SMAJ70AHE3/A | Lower 400 W PPPM rating, SMA (DO-214AC) package (smaller footprint, higher RθJA = 140 °C/W), same VWM/VBR/VC. | Reduced surge handling; suitable only for lower-energy transients (e.g., IEC 61000-4-2 ESD, not IEC 61000-4-5 surges). | Use only where space constraints prohibit SMB and surge threat level is limited to ESD or low-energy switching noise. |
Compared with SMBJ70AHE3_A/H, the SMBJ70AHM3_A/H offers identical protection performance with halogen-free construction, while the SMAJ70AHE3/A trades 33% lower surge power and higher thermal resistance for smaller board area - requiring careful threat-level validation before substitution.
Availability
SMBJ70AHE3_A/H is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interface protection, and telecom DC feed applications requiring stable component supply, AEC-Q101 qualification, and RoHS compliance.
Supply support for SMBJ70AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where robustness against load dump, ESD, and lightning surges is mandatory.
FAQ
What is the clamping voltage of SMBJ70AHE3_A/H at its rated peak pulse current?
The SMBJ70AHE3_A/H has a maximum clamping voltage (VC) of 113 V at its specified peak pulse current (IPPM) of 5.3 A, measured using the 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during a full-rated 600 W transient event, and is confirmed in the Vishay datasheet Document Number 88392, Table on page 2.
Is SMBJ70AHE3_A/H qualified for automotive applications?
Yes, SMBJ70AHE3_A/H is AEC-Q101 qualified, as indicated by the "HE3" suffix in its part number. This certification covers stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling - validating its suitability for under-hood and chassis-mounted automotive electronics per Vishay's ordering information table on page 3.
What is the thermal resistance of SMBJ70AHE3_A/H, and how does it affect PCB layout?
The SMBJ70AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value requires adequate copper pour and thermal vias beneath the SMB package to maintain junction temperature below +150 °C during repeated surge events - especially critical in enclosed automotive enclosures.
How does the breakdown voltage range of SMBJ70AHE3_A/H impact system design margin?
The SMBJ70AHE3_A/H has a guaranteed breakdown voltage (VBR) range of 77.8 V to 86.0 V at 1 mA test current. This ±5% tolerance ensures reliable turn-on above the 70 V stand-off voltage while avoiding false triggering during normal 72 V rail ripple; designers must verify that downstream components tolerate up to 86.0 V during marginal overvoltage conditions.
What is the maximum reverse leakage current of SMBJ70AHE3_A/H at its stand-off voltage?
The SMBJ70AHE3_A/H exhibits a maximum reverse leakage current (ID) of 1.0 µA at its 70 V stand-off voltage (VWM), measured at TA = 25 °C. This ultra-low leakage preserves efficiency in always-on systems such as automotive telematics modules and ensures minimal power loss in battery-backed sensor nodes.
SMBJ70AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 70V
- Voltage - Breakdown (Min):
- 77.8V
- Voltage - Clamping (Max) @ Ipp:
- 113V
- Current - Peak Pulse (10/1000µs):
- 5.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ70AHE3_A/H FAQ
1.How can I place an order for SMBJ70AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ70AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ70AHE3_A/H reliable?
The price and inventory of SMBJ70AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ70AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMBJ70AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ70AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ70AHE3_A/H?
SMBJ70AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ70AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ70AHE3_A/H?
For technical support, including SMBJ70AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ70AHE3_A/H requirements.
6.How does Aetrix verify that SMBJ70AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMBJ70AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ70AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMBJ70AHE3_A/H?
All SMBJ70AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ70AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ70AHE3_A/H part is unused and in its original packaging.
Return procedure for SMBJ70AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ70AHE3_A/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)