Vishay General Semiconductor - Diodes Division SMBJ7.0AHE3_A/I

Overview

SMBJ7.0AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode designed for primary overvoltage protection of sensitive electronics. It features a 7.0 V stand-off voltage (V_WM), 7.78–8.60 V breakdown voltage (V_BR) at 10 mA, 12.0 V maximum clamping voltage (V_C) at 50.0 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed across power rails and I/O lines in automotive ECUs and industrial sensor interfaces.

For engineers reviewing the SMBJ7.0AHE3_A/I datasheet, SMBJ7.0AHE3_A/I pinout, SMBJ7.0AHE3_A/I application, or SMBJ7.0AHE3_A/I equivalent, key selection criteria include its AEC-Q101 qualification, SMB (DO-214AA) package compatibility with automated SMT assembly, low incremental surge resistance, and verified clamping performance under repetitive transient stress per IEC 61000-4-5.

Technical Context

This TVS diode operates as a unidirectional shunt protector: it remains high-impedance below 7.0 V and rapidly avalanches above its 7.78 V minimum breakdown threshold to clamp transients. Its glass-passivated junction ensures stable leakage (<800 µA at V_WM) and fast response time (<1.0 ns), critical for safeguarding MOSFET gates and microcontroller I/O pins against ESD and inductive switching spikes.

Thermally, it sustains operation from –55 °C to +150 °C junction temperature, with R_θJA = 100 °C/W and R_θJL = 20 °C/W. The HE3 suffix confirms RoHS-compliance and AEC-Q101 qualification - required for automotive front-end modules, body control units, and ADAS sensor signal conditioning circuits.

Key Specifications

Pinout & Package

Package: SMB (DO-214AA), surface-mount, unidirectional polarity indicated by cathode band. Matte tin-plated leads meet J-STD-002 solderability and JESD 22-B102 whisker resistance Class 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMBJ7.0AHE3_A/I, the E3/52 variant offers identical protection performance at lower cost but no automotive qualification, while the SMCJ7.0AHE3_A/I delivers 2.5× higher surge energy handling in a physically larger footprint - enabling design flexibility across commercial, industrial, and automotive tiers.

Availability

SMBJ7.0AHE3_A/I is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, telecom power feeding, and consumer adapter input protection requiring stable component supply and AEC-Q101 traceability.

Supply support for SMBJ7.0AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and application-specific validation.

The SMBJ series is engineered for robust transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where consistent clamping, low leakage, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum clamping voltage of the SMBJ7.0AHE3_A/I under rated surge conditions?

The SMBJ7.0AHE3_A/I exhibits a maximum clamping voltage (V_C) of 12.0 V when subjected to its rated 50.0 A peak pulse current (I_PPM) with a 10/1000 µs waveform. This value is measured per Figure 1 in Vishay Document 88392 and defines the upper voltage limit imposed on protected circuitry during worst-case transient events - critical for ensuring compatibility with 5 V or 3.3 V logic interfaces downstream of the SMBJ7.0AHE3_A/I.

Is SMBJ7.0AHE3_A/I suitable for automotive applications?

Yes, SMBJ7.0AHE3_A/I is AEC-Q101 qualified, as confirmed by the "HE3" suffix and footnote (1) in Vishay Document 88392. It undergoes rigorous stress testing including temperature cycling, high-temperature reverse bias, and ESD - making it suitable for under-hood and chassis-mounted automotive modules such as body control units, lighting drivers, and ADAS sensor nodes where reliability under thermal and electrical stress is essential.

What does the "_A/I" suffix indicate in SMBJ7.0AHE3_A/I?

The "_A/I" suffix in SMBJ7.0AHE3_A/I denotes the revision code ("A") and packaging format ("I" = 13-inch tape and reel, 3200 units per reel), per Vishay's Ordering Information table on page 3 of Document 88392. This distinguishes it from variants like "_B/H" (7-inch reel, 750 units) and confirms full compliance with RoHS and AEC-Q101 requirements - critical for production traceability and logistics planning.

How does SMBJ7.0AHE3_A/I compare to bidirectional TVS diodes like SMBJ7.0CA?

SMBJ7.0AHE3_A/I is unidirectional and intended for DC-biased lines (e.g., 12 V supply rails), blocking reverse current until breakdown. In contrast, SMBJ7.0CA is bidirectional and suited for AC or symmetrical signal lines (e.g., RS-485). Their V_BR ranges differ: SMBJ7.0AHE3_A/I specifies 7.78–8.60 V (unidirectional), while SMBJ7.0CA has symmetric breakdown in both directions - making them functionally non-interchangeable without circuit redesign.

What is the thermal resistance from junction to ambient for SMBJ7.0AHE3_A/I?

The typical thermal resistance from junction to ambient (R_θJA) for SMBJ7.0AHE3_A/I is 100 °C/W, measured on a 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad per terminal, as specified in the Thermal Characteristics table of Vishay Document 88392. This value informs thermal derating above 25 °C ambient and validates suitability for enclosed automotive enclosures where airflow is limited and junction temperature must stay below +150 °C.