My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ7.0-E3/52
;;2.jpg)
- Part No.:
- SMBJ7.0-E3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ7.0-E3/52.pdf
- Description:
- TVS DIODE 7VWM 13.3VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:9,769
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ7.0-E3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for primary overvoltage protection of sensitive ICs, MOSFETs, and signal lines in consumer, industrial, and telecom systems. It features a 7.0 V stand-off voltage (VWM), 7.78–8.60 V breakdown voltage (VBR) at 10 mA, 12.0 V maximum clamping voltage (VC) at 50.0 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform.
For engineers reviewing the SMBJ7.0-E3/52 datasheet, SMBJ7.0-E3/52 pinout, SMBJ7.0-E3/52 application, or SMBJ7.0-E3/52 equivalent, key selection criteria include clamping performance under 50 A surge, thermal resistance (RθJA = 100 °C/W), RoHS-compliant SMB (DO-214AA) packaging, and compatibility with automated SMT placement on standard PCB copper pads.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, conducting only when reverse voltage exceeds VBR to divert transient energy away from protected circuitry. Its glass-passivated junction ensures stable breakdown characteristics and low leakage (<800 µA at 7.0 V).
It delivers fast response time (<1 ns), low incremental surge resistance, and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. The device is rated for -55 °C to +150 °C operating junction temperature and supports repetitive surges at 0.01% duty cycle.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.0 V - Maximum continuous reverse working voltage before clamping begins; defines safe operating margin below breakdown. |
| VBR (min/max) | 7.78 V / 8.60 V at 10 mA - Confirmed breakdown threshold range; ensures reliable triggering across process variation. |
| VC @ IPPM | 12.0 V at 50.0 A - Clamped voltage during 10/1000 µs surge; limits stress on downstream components. |
| PPPM | 600 W - Peak pulse power handling capability; supports high-energy transients like ESD and inductive switching spikes. |
| IPPM | 50.0 A - Maximum non-repetitive peak pulse current; determines survivability against defined surge waveforms. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on 0.2" × 0.2" copper pads; informs derating above 25 °C ambient. |
| TJ max. | +150 °C - Maximum junction temperature; sets upper limit for thermal design and reliability validation. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity indicated by cathode band on package body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side in unidirectional configuration; carries forward current during surge conduction. |
| Cathode | Reverse-biased clamping terminal | Marked with band; connected to protected line; initiates avalanche breakdown when reverse voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables robust protection against IEC 61000-4-5 Level 4 surges without external heat sinking on standard PCB pads. |
| 12.0 V clamping voltage at 50 A | Keeps protected ICs within absolute maximum ratings during worst-case 50 A transients, reducing risk of latch-up or gate oxide damage. |
| MSL Level 1, 260 °C peak reflow | Supports single-pass lead-free reflow assembly without moisture-related popcorning or delamination. |
| Glass-passivated junction | Ensures stable VBR tolerance and low leakage drift over temperature and lifetime, critical for long-term field reliability. |
| RoHS-compliant, commercial grade (E3 suffix) | Meets global environmental compliance requirements without halogen restrictions; suitable for general-purpose industrial and consumer designs. |
Applications
| Industrial Motor Control | Automotive Body Electronics |
|---|---|
Use Scenario: Protection of microcontroller GPIO and CAN transceiver inputs against load dump and inductive kickback in PLC I/O modules. IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and ground to clamp transients before they reach MCU input pins. Use Value: Limits voltage excursion to ≤12.0 V during 50 A surges, preventing permanent damage to 5 V-tolerant I/O structures. |
Use Scenario: Surge suppression on LIN bus lines and sensor supply rails in door control units and seat modules. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing ISO 7637-2 Pulse 1 and Pulse 2a transients on 12 V distribution networks. Use Value: Maintains 7.0 V working margin while clamping to 12.0 V, ensuring uninterrupted communication during battery disconnection events. |
| Consumer Power Adapters | Telecom Base Station Interfaces |
Use Scenario: Input-stage protection of AC-DC flyback controllers and optocoupler feedback paths against lightning-induced surges. IC Role / Device Role / Timing Role: Primary-side TVS on DC bus rail to shunt transient energy before it propagates into PWM controller ICs. Use Value: Withstands 600 W pulses without degradation, preserving regulation accuracy and enabling compact adapter designs. |
Use Scenario: Secondary-side protection of Ethernet PHY interfaces and RS-485 transceivers exposed to ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance TVS on differential data lines to suppress fast transients without distorting signal integrity. Use Value: Delivers sub-1 ns response and 12.0 V clamping, meeting IEC 61000-4-2 Level 4 (15 kV air/8 kV contact) immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ7.0A-E3/52 | Same electrical specs and package; identical marking code KM and VBR range (7.78–8.60 V); differs only in ordering suffix format (no trailing "/52" in base P/N). | No functional difference; both support same PCB layout and thermal design. | Select SMBJ7.0A-E3/52 if requiring standard base part number without tape-and-reel quantity coding. |
| SMAJ7.0A-E3/61 | Lower 400 W peak pulse power, higher 13.5 V clamping voltage at 32.2 A, SMA (DO-214AC) package with smaller footprint and higher RθJA (140 °C/W). | Less robust for high-energy surges; requires tighter thermal management and may not meet 600 W system-level test requirements. | Choose only if board space is constrained and surge threat level is limited to IEC 61000-4-2 ESD only. |
Compared with SMBJ7.0A-E3/52, the original SMBJ7.0-E3/52 offers identical protection performance but reflects Vishay's updated ordering nomenclature; versus SMAJ7.0A-E3/61, it provides 50% higher pulse power headroom and 1.5 V lower clamping-critical for protecting 5 V logic rails under heavy inductive transients.
Availability
SMBJ7.0-E3/52 is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, and telecom interface protection requiring stable component supply, consistent RoHS compliance, and verified surge performance across production lots.
Supply support for SMBJ7.0-E3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series was developed for high-power, surface-mount transient suppression in space-constrained environments where 600 W pulse handling and low clamping voltage are essential for safeguarding modern low-voltage ICs.
FAQ
What is the clamping voltage of SMBJ7.0-E3/52 at its rated peak pulse current?
The SMBJ7.0-E3/52 has a maximum clamping voltage (VC) of 12.0 V at 50.0 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ7.0-E3/52 maintains this clamping performance across its qualified operating temperature range.
Is SMBJ7.0-E3/52 suitable for automotive applications?
The SMBJ7.0-E3/52 is RoHS-compliant commercial-grade; it is not AEC-Q101 qualified. For automotive use, Vishay specifies the HE3 variant (e.g., SMBJ7.0AHE3_B). The SMBJ7.0-E3/52 may be used in non-safety-critical automotive subsystems where qualification is not mandated, but designers must validate reliability independently. The SMBJ7.0-E3/52 itself does not carry AEC-Q101 certification.
What does the "-E3/52" suffix indicate in SMBJ7.0-E3/52?
The "E3" suffix denotes RoHS-compliant, commercial-grade construction with matte tin-plated leads. The "/52" indicates packaging in 7" diameter plastic tape and reel, with a base quantity of 750 units per reel. This ordering code aligns with Vishay's standard delivery mode for SMBJ series devices and ensures compatibility with automated pick-and-place equipment.
How does SMBJ7.0-E3/52 compare to bidirectional TVS diodes like SMBJ7.0CA?
The SMBJ7.0-E3/52 is unidirectional and conducts only in reverse bias above VBR, making it ideal for DC line protection with defined polarity. In contrast, SMBJ7.0CA is bidirectional with symmetrical clamping in both directions, suited for AC or floating signal lines. The SMBJ7.0-E3/52 offers lower leakage and tighter VBR tolerance than its bidirectional counterpart, but cannot protect against positive-going transients on grounded lines.
What is the thermal resistance of SMBJ7.0-E3/52, and how does it affect layout?
The SMBJ7.0-E3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimum recommended pad layout per Vishay's datasheet. To maintain safe junction temperatures under repetitive surges, designers must ensure adequate copper area and avoid excessive ambient temperature rise; the SMBJ7.0-E3/52 derates linearly above 25 °C ambient.
SMBJ7.0-E3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7V
- Voltage - Breakdown (Min):
- 7.78V
- Voltage - Clamping (Max) @ Ipp:
- 13.3V
- Current - Peak Pulse (10/1000µs):
- 45.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ7.0-E3/52 FAQ
1.How can I place an order for SMBJ7.0-E3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ7.0-E3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ7.0-E3/52 reliable?
The price and inventory of SMBJ7.0-E3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ7.0-E3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ7.0-E3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ7.0-E3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ7.0-E3/52?
SMBJ7.0-E3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ7.0-E3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ7.0-E3/52?
For technical support, including SMBJ7.0-E3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ7.0-E3/52 requirements.
6.How does Aetrix verify that SMBJ7.0-E3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ7.0-E3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ7.0-E3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ7.0-E3/52?
All SMBJ7.0-E3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ7.0-E3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ7.0-E3/52 part is unused and in its original packaging.
Return procedure for SMBJ7.0-E3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ7.0-E3/52 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
