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Vishay General Semiconductor - Diodes Division SMBJ75AHE3_A/I
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- Part No.:
- SMBJ75AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ75AHE3_A/I.pdf
- Description:
- TVS DIODE 75VWM 121VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:5,757
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Product details
Overview
SMBJ75AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 75 V stand-off voltage (VWM), 83.3–92.1 V breakdown voltage (VBR) at 1 mA, 121 V maximum clamping voltage (VC) at 5.0 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ75AHE3_A/I datasheet, SMBJ75AHE3_A/I pinout, SMBJ75AHE3_A/I application, or SMBJ75AHE3_A/I equivalent, this AEC-Q101 qualified TVS offers verified surge immunity for automotive-grade power rail protection, low-leakage reverse operation up to 75 V, and validated thermal performance under repetitive 0.01% duty cycle surges.
Technical Context
This unidirectional TVS operates as a voltage-clamping device that remains high-impedance below VWM = 75 V and rapidly transitions to low-impedance conduction above VBR = 83.3–92.1 V to divert transient energy. Its glass-passivated junction ensures stable breakdown characteristics and fast response time (<1 ns), critical for suppressing ESD and inductive switching spikes.
The device is rated for 100 A non-repetitive forward surge current (IFSM) and exhibits 0.106 %/°C temperature coefficient of VBR, enabling predictable clamping behavior across -55 °C to +150 °C operating junction temperature range. Thermal resistance is 100 °C/W (junction-to-ambient) on standard 0.2" × 0.2" copper pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 75 V - Maximum continuous reverse working voltage before clamping begins; defines safe operating margin for 72 V nominal DC rails. |
| VBR @ IT = 1 mA | 83.3–92.1 V - Verified breakdown threshold ensuring reliable turn-on during overvoltage events without premature conduction. |
| VC @ IPPM = 5.0 A | 121 V - Clamped voltage under 10/1000 µs surge; limits downstream component stress to ≤121 V during 600 W transients. |
| PPPM | 600 W - Peak pulse power handling capability with 0.01% duty cycle; supports repeated surge suppression in motor drive and power supply inputs. |
| IFSM | 100 A - Single half-sine surge rating (8.3 ms); withstands high-energy inrush or fault currents without failure. |
| TJ max. | +150 °C - Maximum junction temperature; enables use in under-hood automotive environments and enclosed industrial enclosures. |
| RθJA | 100 °C/W - Thermal resistance on standard PCB pad layout; informs heatsinking requirements for sustained surge duty cycles. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads compliant with J-STD-002 and JESD 22-B102. Polarity marked by cathode band; anode and cathode terminals are axially oriented along the body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | High-side connection point for unidirectional clamping | Connected to protected line (e.g., +12 V rail); conducts surge current toward ground when voltage exceeds VBR. |
| Anode | Low-side reference terminal | Typically tied to system ground or return path; completes clamping loop and establishes reference for VWM/VBR thresholds. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power electronics per stress test requirements - supports use in engine control units and ADAS power domains. |
| 600 W peak pulse power (10/1000 µs) | Enables robust protection against ISO 7637-2 Pulse 1, 2a, and 5a transients without derating in standard layouts. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, improving clamping precision for sensitive 3.3 V/5 V logic interfaces. |
| MSL Level 1 (260 °C peak reflow) | Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns or baking requirements. |
| Glass passivated junction | Ensures long-term stability of VBR and leakage current over temperature and lifetime - critical for field-reliable designs. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Suppressing load-dump transients (ISO 16750-2) on 12 V battery-fed ECUs and infotainment modules. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between battery input and DC-DC converter input stage. Use Value: Limits voltage excursion to ≤121 V during 35 V/100 ms load dump, preventing damage to upstream regulators and microcontrollers. |
Use Scenario: Guarding analog sensor outputs (e.g., pressure, temperature) against ESD and cable discharge events in factory automation. IC Role / Device Role / Timing Role: Low-capacitance TVS connected between sensor signal line and ground, adjacent to connector. Use Value: Clamps ±8 kV contact ESD (IEC 61000-4-2) within <1 ns while maintaining <1 µA leakage at 75 V, preserving signal integrity. |
| Telecom DC Power Input Protection | Motor Drive Control Board Surge Suppression |
Use Scenario: Protecting PoE-powered equipment front-end rectifiers and hot-swap controllers from lightning-induced surges on 48 V DC input. IC Role / Device Role / Timing Role: Primary-level TVS on DC input rail, upstream of fuse and filtering inductors. Use Value: Absorbs 600 W transient energy (10/1000 µs) without degradation, meeting GR-1089-CORE Level 3 surge immunity requirements. |
Use Scenario: Shielding gate drivers and current-sense amplifiers from inductive kickback during IGBT/MOSFET switching in HVAC inverters. IC Role / Device Role / Timing Role: Localized clamping device across H-bridge high-side driver supply pins. Use Value: Maintains VC ≤121 V during 100 A turn-off spikes, preventing latch-up or overvoltage shutdown of isolated gate drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ75AHE3_A/H | Same electrical specs and AEC-Q101 qualification; differs only in tape-and-reel packaging (750-unit vs. 3200-unit reel). | No functional difference; selected based on production volume and SMT line feed compatibility. | Choose SMBJ75AHE3_A/H for low-volume prototyping or small-batch builds requiring smaller reels. |
| SMBJ75AHM3_A/I | Halogen-free variant with identical VWM, VBR, VC, and PPPM; same AEC-Q101 qualification and RoHS compliance. | Required where halogen-free material declaration is mandated (e.g., EU medical or public infrastructure projects). | Specify SMBJ75AHM3_A/I when full halogen-free BOM compliance is contractually required. |
Compared with SMBJ75AHE3_A/I, SMBJ75AHE3_A/H offers identical protection performance in a smaller reel format for flexibility, while SMBJ75AHM3_A/I adds halogen-free construction without compromising surge capability or automotive qualification - enabling compliance-driven selection without redesign.
Availability
SMBJ75AHE3_A/I is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, telecom DC input surge suppression, and motor drive control board design requiring stable component supply and AEC-Q101 assurance.
Supply support for SMBJ75AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific validation.
The SMBJ series was engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom systems where consistent clamping performance and long-term stability are non-negotiable.
FAQ
What is the maximum clamping voltage of SMBJ75AHE3_A/I at its rated peak pulse current?
The SMBJ75AHE3_A/I has a maximum clamping voltage (VC) of 121 V when subjected to its specified peak pulse current of 5.0 A using a 10/1000 µs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream components remain within absolute maximum ratings.
Is SMBJ75AHE3_A/I qualified for automotive applications?
Yes, SMBJ75AHE3_A/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet 88392. This qualification covers stress tests including high-temperature operating life, temperature cycling, and ESD - validating its suitability for under-hood and chassis-mounted automotive electronics such as body control modules and ADAS power supplies.
What does the "A/I" suffix in SMBJ75AHE3_A/I indicate?
The "A/I" suffix in SMBJ75AHE3_A/I specifies the packaging configuration: "A" denotes the base product revision level, and "I" indicates 13-inch diameter plastic tape-and-reel packaging containing 3200 units. This format is optimized for high-volume automated SMT placement and aligns with industry-standard JEDEC carrier specifications for DO-214AA devices.
How does SMBJ75AHE3_A/I differ from bidirectional variants like SMBJ75CA?
SMBJ75AHE3_A/I is unidirectional and features polarity marking (cathode band), conducting only in reverse bias above VBR; SMBJ75CA is bidirectional with symmetrical clamping in both directions and no polarity marking. The unidirectional version provides lower leakage at VWM and is preferred for DC rail protection, whereas bidirectional types suit AC-coupled or floating signal lines.
What is the thermal resistance and recommended pad layout for SMBJ75AHE3_A/I?
SMBJ75AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as defined in Vishay's datasheet. Use this pad size to ensure rated power dissipation and avoid thermal runaway during repetitive surge events - smaller pads increase RθJA and reduce safe operating margins.
SMBJ75AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 75V
- Voltage - Breakdown (Min):
- 83.3V
- Voltage - Clamping (Max) @ Ipp:
- 121V
- Current - Peak Pulse (10/1000µs):
- 5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ75AHE3_A/I FAQ
1.How can I place an order for SMBJ75AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ75AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ75AHE3_A/I reliable?
The price and inventory of SMBJ75AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ75AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ75AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ75AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ75AHE3_A/I?
SMBJ75AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ75AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ75AHE3_A/I?
For technical support, including SMBJ75AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ75AHE3_A/I requirements.
6.How does Aetrix verify that SMBJ75AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ75AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ75AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ75AHE3_A/I?
All SMBJ75AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ75AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ75AHE3_A/I part is unused and in its original packaging.
Return procedure for SMBJ75AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ75AHE3_A/I Tags
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