Vishay General Semiconductor - Diodes Division SMBJ7.5AHE3_A/I
- Part No.:
- SMBJ7.5AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ7.5AHE3_A/I.pdf
- Description:
- TVS DIODE 7.5VWM 12.9VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ7.5AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 7.5 V stand-off voltage (VWM), 8.33–9.21 V breakdown voltage (VBR) at 1 mA, 12.9 V maximum clamping voltage (VC) at 46.5 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform), used to protect MOSFETs, ICs, and sensor interfaces in industrial and automotive electronics.
For engineers reviewing the SMBJ7.5AHE3_A/I datasheet, SMBJ7.5AHE3_A/I pinout, SMBJ7.5AHE3_A/I application, or SMBJ7.5AHE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 12.9 V clamping performance under 46.5 A surge, thermal resistance (RθJA = 100 °C/W), and compatibility with automated SMT placement on standard PCB pads.
Technical Context
This TVS diode operates as a fast-acting shunt protector: when reverse voltage exceeds VBR (8.33–9.21 V), it avalanches to clamp transient energy within nanoseconds. Its glass-passivated junction ensures stable leakage (<100 µA at VWM) and low incremental surge resistance, critical for repeatable protection of 5 V logic rails and 12 V power inputs.
The device is rated for 100 A non-repetitive forward surge (IFSM, 8.3 ms half-sine), supports -55 °C to +150 °C junction operation, and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak-enabling robust use in automotive ECUs and industrial controllers where thermal cycling and surge immunity are mission-critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 7.5 V - Maximum continuous reverse voltage before significant leakage; sets operating margin above 5 V nominal supply rails. |
| VBR (Breakdown Voltage) | 8.33–9.21 V at 1 mA - Tight tolerance ensures predictable turn-on during transients without false triggering. |
| VC (Clamping Voltage) | 12.9 V at IPPM = 46.5 A - Limits downstream voltage stress during 600 W surge events, protecting 15 V-rated components. |
| PPPM (Peak Pulse Power) | 600 W (10/1000 µs) - Sustains high-energy lightning-induced surges common in automotive and industrial I/O lines. |
| ID (Reverse Leakage) | 100 µA max at VWM - Low leakage preserves efficiency in battery-powered sensor nodes and always-on circuits. |
| TJ max. | +150 °C - Enables deployment in under-hood automotive environments and enclosed industrial enclosures. |
| AEC-Q101 Qualified | Yes - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC specification. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, cathode-banded unidirectional configuration. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); matte tin-plated leads, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Surge return path | Connected to protected line ground or low-side reference; completes clamping loop during transient events. |
| Cathode | Reverse-biased terminal / Clamping node | Connected to protected line (e.g., 5 V rail); avalanche conduction occurs here when V > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Handles high-energy transients from inductive switching or ESD without degradation across 10,000+ events. |
| Glass passivated chip junction | Ensures long-term stability of VBR and leakage under humidity, temperature, and bias stress in harsh environments. |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive applications including engine control, body electronics, and ADAS sensor interfaces. |
| MSL Level 1, 260 °C peak reflow | Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns. |
| Low profile SMB package | Enables dense PCB layouts in space-constrained modules such as motor drivers and IoT edge nodes. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 5 V microcontroller power inputs in vehicle body control modules exposed to load dump and ISO 7637-2 pulses. IC Role / Device Role: Unidirectional shunt TVS placed between VCC and GND to clamp transients above 7.5 V. Use Value: Clamps to ≤12.9 V during 46.5 A surges, preventing latch-up or damage to 15 V absolute-maximum-rated MCUs. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA transmitter) in factory automation PLC I/O cards. IC Role / Device Role: TVS mounted across signal and return lines to suppress EFT bursts and cable discharge events. Use Value: Sub-100 ns response limits voltage excursion to safe levels for precision op-amps and ADC front-ends. |
| Consumer USB Port ESD Protection | Telecom DC Power Input Protection |
|
Use Scenario: Secondary-level ESD protection on VBUS line of USB 2.0 ports in set-top boxes and smart displays. IC Role / Device Role: Standoff-rated TVS absorbing ±15 kV contact discharge per IEC 61000-4-2 without degrading signal integrity. Use Value: 7.5 V VWM allows full 5 V operation while 12.9 V VC prevents overvoltage on USB PHY transceivers. |
Use Scenario: Front-end surge suppression on -48 V telecom rectifier outputs feeding base station RF modules. IC Role / Device Role: Unidirectional TVS referenced to system ground, clamping positive-going surges on negative rails. Use Value: 600 W rating handles combination wave surges (1.2/50 µs + 8/20 µs) per ITU-T K.20/21 standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ7.5A-E3/52 | Commercial-grade (non-AEC-Q101), same VWM/VBR/VC specs, identical SMB package and pinout. | Lacks automotive qualification; suitable for consumer or industrial non-automotive designs. | Select when AEC-Q101 is not required and cost optimization is prioritized. |
| SMCJ7.5AHE3_A/I | Same electrical specs but in larger SMC (DO-214AB) package; higher thermal mass, RθJA ≈ 50 °C/W vs. 100 °C/W. | Better power handling in sustained surge conditions; requires larger PCB footprint. | Choose for higher reliability in thermally constrained 5 V rail protection where layout space permits. |
Compared with SMBJ7.5A-E3/52, the SMBJ7.5AHE3_A/I adds AEC-Q101 qualification for automotive use; compared with SMCJ7.5AHE3_A/I, it trades thermal derating margin for compact SMB footprint-making it optimal for space-limited automotive modules requiring certified surge immunity.
Availability
SMBJ7.5AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, telecom power supplies, and consumer USB interface protection requiring stable component supply and AEC-Q101 compliance.
Supply support for SMBJ7.5AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive-grade validation.
The SMBJ series targets high-reliability transient suppression in automotive, industrial, and telecom systems-designed specifically to meet stringent surge immunity standards while supporting automated SMT manufacturing.
FAQ
What is the clamping voltage of SMBJ7.5AHE3_A/I at its rated peak pulse current?
The SMBJ7.5AHE3_A/I has a maximum clamping voltage (VC) of 12.9 V at its rated peak pulse current (IPPM) of 46.5 A, measured under the standardized 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during a 600 W transient event and is critical for ensuring downstream components remain within their absolute maximum ratings. The SMBJ7.5AHE3_A/I maintains this clamping performance across its qualified operating temperature range.
Is SMBJ7.5AHE3_A/I suitable for automotive applications?
Yes, SMBJ7.5AHE3_A/I is AEC-Q101 qualified, meaning it has undergone rigorous stress testing-including temperature cycling, high-temperature reverse bias, and ESD-to validate reliability in automotive environments. Its HE3 suffix explicitly denotes this qualification, making it appropriate for use in body control modules, infotainment systems, and ADAS sensor interfaces where transient immunity and long-term stability are mandatory. The SMBJ7.5AHE3_A/I meets all applicable automotive surge and lifetime requirements.
How does the SMBJ7.5AHE3_A/I differ from bidirectional TVS diodes like SMBJ7.5CA?
The SMBJ7.5AHE3_A/I is unidirectional and features a cathode band marking; it conducts only in reverse breakdown, making it ideal for DC power rail protection where polarity is fixed. In contrast, SMBJ7.5CA is bidirectional with no polarity marking and clamps transients of either polarity-used in AC signal lines or floating buses. Their VBR and VC values differ: SMBJ7.5AHE3_A/I has VBR = 8.33–9.21 V, while SMBJ7.5CA has symmetric breakdown in both directions. The SMBJ7.5AHE3_A/I is not interchangeable with SMBJ7.5CA without circuit redesign.
What is the maximum reverse leakage current for SMBJ7.5AHE3_A/I at its stand-off voltage?
The SMBJ7.5AHE3_A/I exhibits a maximum reverse leakage current (ID) of 100 µA at its stand-off voltage (VWM) of 7.5 V and ambient temperature of 25 °C. This low leakage ensures minimal power loss in always-on circuits and avoids false triggering in high-impedance sensing paths. Leakage remains within specification up to +125 °C, supporting reliable operation in thermally demanding applications such as under-hood automotive modules where the SMBJ7.5AHE3_A/I is commonly deployed.
Can SMBJ7.5AHE3_A/I be used in place of SMBJ5.0AHE3_A/I for 5 V rail protection?
No-SMBJ7.5AHE3_A/I is not a direct replacement for SMBJ5.0AHE3_A/I in 5 V rail protection. While both share the same package and AEC-Q101 qualification, the SMBJ7.5AHE3_A/I has a higher 7.5 V stand-off voltage (VWM) and 8.33–9.21 V breakdown range, which may allow damaging transients to exceed 5 V before clamping begins. The SMBJ5.0AHE3_A/I is optimized for tighter margin around 5 V systems with VWM = 5.0 V and VC = 9.2 V. Using SMBJ7.5AHE3_A/I risks insufficient protection; always match VWM to the nominal rail voltage. The SMBJ7.5AHE3_A/I is intended for 7–8 V systems or higher-margin designs.
SMBJ7.5AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.33V
- Voltage - Clamping (Max) @ Ipp:
- 12.9V
- Current - Peak Pulse (10/1000µs):
- 46.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ7.5AHE3_A/I FAQ
1.How can I place an order for SMBJ7.5AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ7.5AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ7.5AHE3_A/I reliable?
The price and inventory of SMBJ7.5AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ7.5AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ7.5AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ7.5AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ7.5AHE3_A/I?
SMBJ7.5AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ7.5AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ7.5AHE3_A/I?
For technical support, including SMBJ7.5AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ7.5AHE3_A/I requirements.
6.How does Aetrix verify that SMBJ7.5AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ7.5AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ7.5AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ7.5AHE3_A/I?
All SMBJ7.5AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ7.5AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ7.5AHE3_A/I part is unused and in its original packaging.
Return procedure for SMBJ7.5AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ7.5AHE3_A/I Tags

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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