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Vishay General Semiconductor - Diodes Division SMBJ75AHE3_B/H
- Part No.:
- SMBJ75AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ75AHE3_B/H.pdf
- Description:
- 600W,75V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:9,120
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Product details
Overview
SMBJ75AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 75 V stand-off voltage (VWM), 83.3–92.1 V breakdown voltage (VBR) at 1 mA, 121 V maximum clamping voltage (VC) at 5.0 A peak pulse current, and 600 W peak pulse power rating with a 10/1000 µs waveform - deployed in automotive power supply inputs and industrial sensor interfaces.
For engineers reviewing the SMBJ75AHE3_B/H datasheet, SMBJ75AHE3_B/H pinout, SMBJ75AHE3_B/H application, or SMBJ75AHE3_B/H equivalent, this part is selected for high-reliability DC rail protection where AEC-Q101 qualification, low clamping ratio (VC/VBR ≈ 1.31), and MSL Level 1 moisture sensitivity are critical design requirements.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp, triggered when reverse voltage exceeds its specified breakdown range. Its glass-passivated junction ensures stable VBR tolerance and low leakage (<1.0 µA at 75 V), while its low incremental surge resistance enables effective energy diversion during fast transients.
The device is rated for 150 °C maximum junction temperature and exhibits a positive temperature coefficient of VBR (+0.106 %/°C), supporting predictable thermal derating in high-ambient environments. It meets J-STD-020 MSL Level 1 and is qualified to AEC-Q101 for automotive under-hood applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 75 V - Maximum continuous reverse operating voltage before significant leakage; defines safe DC rail margin. |
| VBR min/max | 83.3 V / 92.1 V at 1.0 mA - Tight breakdown window ensures consistent turn-on across production lots. |
| VC @ IPPM | 121 V at 5.0 A - Clamping voltage limits downstream IC stress during 10/1000 µs surges. |
| PPPM | 600 W - Peak pulse power handling capability with standard lightning/surge waveform. |
| ID @ VWM | ≤1.0 µA - Ultra-low reverse leakage preserves battery life and signal integrity in always-on circuits. |
| TJ max | +150 °C - Enables operation in engine control units and industrial motor drives. |
| MSL Level | Level 1 (260 °C peak reflow) - Supports standard SMT assembly without baking or special handling. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, cathode-band marked end. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H). Matte tin-plated leads, solderable per J-STD-002.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes clamping path during overvoltage events. |
| Cathode | High-side input terminal | Connected to protected line (e.g., 75 V rail); band marking identifies this terminal on PCB layout. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per stress test plan. |
| 600 W peak pulse power | Withstands IEC 61000-4-5 Level 4 surge (4 kV/2 Ω) on 75 V DC lines without degradation. |
| Low clamping ratio (VC/VBR) | 1.31 typical - Minimizes voltage overshoot across protected ICs compared to competing TVS devices. |
| MSL Level 1 | Enables direct placement into reflow ovens without pre-bake, reducing manufacturing cost and cycle time. |
| Glass-passivated junction | Ensures long-term stability of VBR and leakage performance under thermal and humidity stress. |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Clamp |
|---|---|
|
Use Scenario: Protecting 75 V auxiliary power rail in vehicle body control modules against load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between rail and ground, activated within <1 ps of overvoltage onset. Use Value: Limits transient voltage to ≤121 V, preventing damage to downstream PMICs and microcontrollers rated for 80 V absolute max. |
Use Scenario: Shielding analog output (4–20 mA) lines of pressure sensors in factory automation systems from ESD and inductive switching noise. IC Role / Device Role / Timing Role: Low-leakage (≤1 µA) TVS connected across signal and return, preserving loop accuracy during normal operation. Use Value: Clamps 8 kV contact ESD per IEC 61000-4-2 without altering baseline signal offset or gain. |
| Telecom DC Power Feeder Protection | OEM Motor Drive DC Link Snubber |
|
Use Scenario: Safeguarding -48 V telecom rectifier outputs against lightning-induced surges on outdoor cabinet feeds. IC Role / Device Role / Timing Role: Unidirectional TVS mounted at power entry point, absorbing repetitive 10/1000 µs transients up to 600 W. Use Value: Maintains clamping voltage below 121 V even after 1000+ surge events, ensuring field-replaceable system longevity. |
Use Scenario: Suppressing commutation spikes on 75 V DC link in brushless DC motor controllers used in HVAC blowers. IC Role / Device Role / Timing Role: Fast-response avalanche diode placed across bus terminals, diverting inductive kickback energy away from IGBT gate drivers. Use Value: Reduces voltage overshoot by >45 % versus Zener-only solutions, extending IGBT lifetime under PWM switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ75AHM3_B/H | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. | No functional difference; selected when halogen-free compliance is mandated by OEM material declarations. | Direct substitution where halogen content reporting is required; same footprint and thermal behavior. |
| SMCJ75AHE3_A/H | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package with higher PPPM (1500 W) and RθJA (50 °C/W). | Used where higher single-pulse energy absorption or lower thermal resistance is needed, e.g., in high-power inverters. | Not pin-compatible; requires PCB redesign; choose only when 600 W is insufficient and space allows SMC footprint. |
Compared with SMBJ75AHE3_B/H, the HM3 variant offers identical protection performance with halogen-free construction, while the SMCJ75AHE3_A/H delivers 2.5× higher surge power in a larger package - making the SMBJ75AHE3_B/H optimal for space-constrained AEC-Q101 designs needing precise 600 W capability.
Availability
SMBJ75AHE3_B/H is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, and telecom power supplies requiring stable component supply with full AEC-Q101 traceability and RoHS compliance.
Supply support for SMBJ75AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The SMBJ series targets high-volume, high-reliability transient suppression in automotive, industrial, and telecom infrastructure - engineered for robustness under harsh thermal, mechanical, and electrical stress.
FAQ
What is the maximum clamping voltage of SMBJ75AHE3_B/H at its rated peak pulse current?
The SMBJ75AHE3_B/H has a maximum clamping voltage (VC) of 121 V at 5.0 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is measured under standardized surge conditions and defines the upper voltage limit imposed on protected circuitry during transient events - critical for ensuring downstream ICs remain within their absolute maximum ratings.
Is SMBJ75AHE3_B/H qualified for automotive applications?
Yes, SMBJ75AHE3_B/H is AEC-Q101 qualified, meaning it has passed rigorous stress tests including high-temperature reverse bias, temperature cycling, and ESD immunity required for automotive under-hood and chassis-mounted electronics. The "HE3" suffix explicitly denotes this qualification, and the device is rated for operation from –55 °C to +150 °C junction temperature.
What does the "_B/H" suffix indicate in SMBJ75AHE3_B/H?
The "_B/H" suffix in SMBJ75AHE3_B/H specifies packaging configuration: "B" denotes the revision code (Revision B per Vishay's internal documentation), and "H" indicates the preferred package code for 7″ diameter tape-and-reel delivery with 750 units per reel. This matches the ordering information table in Document Number 88392 and confirms standard SMT compatibility.
How does SMBJ75AHE3_B/H differ from bidirectional variants like SMBJ75CA?
SMBJ75AHE3_B/H is unidirectional, with polarity marked by a cathode band and intended for DC line protection where reverse conduction must be blocked. In contrast, SMBJ75CA is bidirectional, symmetric in both directions, and used for AC or floating signal lines. Their VBR and VC values differ: SMBJ75CA has lower VBR (≈70.3–77.7 V) and higher VC (≈113 V), reflecting different test conditions and conduction paths.
What is the thermal resistance from junction to ambient for SMBJ75AHE3_B/H?
The typical thermal resistance from junction to ambient (RθJA) for SMBJ75AHE3_B/H is 100 °C/W when mounted on the minimum recommended pad layout (0.2″ × 0.2″ copper pads per terminal). This value assumes no additional heatsinking and is used to calculate junction temperature rise under steady-state power dissipation - essential for validating long-term reliability in enclosed enclosures.
SMBJ75AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 75V
- Voltage - Breakdown (Min):
- 83.3V
- Voltage - Clamping (Max) @ Ipp:
- 121V
- Current - Peak Pulse (10/1000µs):
- 5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ75AHE3_B/H FAQ
1.How can I place an order for SMBJ75AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ75AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ75AHE3_B/H reliable?
The price and inventory of SMBJ75AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ75AHE3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ75AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ75AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ75AHE3_B/H?
SMBJ75AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ75AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ75AHE3_B/H?
For technical support, including SMBJ75AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ75AHE3_B/H requirements.
6.How does Aetrix verify that SMBJ75AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ75AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ75AHE3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ75AHE3_B/H?
All SMBJ75AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ75AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ75AHE3_B/H part is unused and in its original packaging.
Return procedure for SMBJ75AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ75AHE3_B/H Tags
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