Vishay General Semiconductor - Diodes Division SMBJ7.5CAHE3_A/I
- Part No.:
- SMBJ7.5CAHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ7.5CAHE3_A/I.pdf
- Description:
- TVS DIODE 7.5VWM 12.9VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ7.5CAHE3_A/I from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) diode in the SMB (DO-214AA) package, designed for clamping voltage transients on signal or power lines. It features a 7.5 V stand-off voltage (VWM), 8.33–9.21 V breakdown voltage (VBR) at 1 mA test current, and clamps to ≤12.9 V at 46.5 A peak pulse current (IPPM) under 10/1000 µs waveform - protecting sensitive ICs and MOSFETs in industrial sensor interfaces.
For engineers reviewing the SMBJ7.5CAHE3_A/I datasheet, SMBJ7.5CAHE3_A/I pinout, SMBJ7.5CAHE3_A/I application, or SMBJ7.5CAHE3_A/I equivalent, this device is selected for robust ESD and surge protection in bidirectional signal paths where low clamping voltage, AEC-Q101 qualification, and 600 W peak pulse power capability are required.
Technical Context
This bidirectional TVS operates symmetrically across both polarities, with identical electrical characteristics in forward and reverse directions. Its glass-passivated junction ensures stable breakdown behavior and fast response time (<1 ns), while the low incremental surge resistance enables effective energy diversion during transient events.
The device is rated for 600 W peak pulse power (10/1000 µs), 5.0 W steady-state power dissipation, and operates over –55 °C to +150 °C junction temperature range. It meets MSL Level 1 per J-STD-020 and is AEC-Q101 qualified - confirming suitability for automotive and harsh-environment industrial deployments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 7.5 V - maximum continuous reverse voltage before significant leakage; defines safe operating margin below clamping threshold |
| VBR (Breakdown Voltage) | 8.33–9.21 V at 1 mA - guaranteed conduction onset range; ensures predictable turn-on during overvoltage events |
| VC (Clamping Voltage) | ≤12.9 V at IPPM = 46.5 A - limits downstream voltage stress during 600 W transient; critical for IC-level protection |
| PPPM (Peak Pulse Power) | 600 W (10/1000 µs) - quantifies single-event surge handling capacity; validated per ANSI/IEEE C62.35 |
| ID (Max Reverse Leakage) | 100 µA at VWM - low leakage preserves signal integrity and minimizes standby power loss in always-on circuits |
| TJ max | +150 °C - enables operation in high-temperature environments such as engine control units or industrial motor drives |
| AEC-Q101 Qualified | Yes - certified for automotive electronics per stress-test requirements including HTRB, HTGB, and temperature cycling |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, bidirectional configuration with no polarity marking - terminals are symmetrical and interchangeable.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode / Cathode (symmetrical) | Bidirectional transient conduction path | No designated anode/cathode; either terminal serves as input/output - simplifies PCB layout for AC-coupled or differential lines |
| Case (cathode band absent) | Non-polarized termination | Eliminates orientation constraints during automated placement; supports routing flexibility in space-constrained layouts |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Handles high-energy surges common in industrial I/O and automotive load-dump scenarios without degradation |
| AEC-Q101 qualification (HE3 suffix) | Validated reliability for automotive ECUs, ADAS sensors, and infotainment systems requiring long-term field stability |
| Low clamping voltage (VC ≤ 12.9 V) | Protects 5 V and 3.3 V logic interfaces by limiting transient overshoot well below IC absolute maximum ratings |
| MSL Level 1 moisture sensitivity | Enables standard reflow assembly without baking; compatible with high-volume SMT production lines |
| Glass-passivated junction | Ensures consistent VBR tolerance and low leakage over temperature and lifetime - critical for precision sensing nodes |
Applications
| Industrial Sensor Interface | Automotive CAN Bus Protection |
|---|---|
Use Scenario: Protecting analog output lines of pressure/temperature sensors exposed to switching noise and ESD in factory automation cabinets. IC Role / Device Role / Timing Role: Bidirectional clamping element placed directly at connector entry point to shunt transients before reaching ADC front-end or signal conditioner. Use Value: Prevents latch-up or parametric shift in precision op-amps and SAR ADCs by limiting voltage excursions to ≤12.9 V during 46.5 A surges. |
Use Scenario: Safeguarding CANH/CANL differential pair against ISO 7637-2 pulse 1, 2a, and 3a transients in body control modules. IC Role / Device Role / Timing Role: Symmetric TVS pair (one per line) absorbing common-mode and differential surges without disrupting 1 Mbps data integrity. Use Value: Maintains bus availability during 100 V/50 Ω load-dump events due to sub-13 V clamping and <1 ns response - no communication interruption. |
| USB 2.0 Data Line Protection | AC/DC Power Supply Input Stage |
Use Scenario: ESD protection on D+/D− lines of embedded USB peripherals in medical devices and kiosks. IC Role / Device Role / Timing Role: Low-capacitance bidirectional clamp (CJ ≈ 200 pF at 0 V) placed adjacent to USB connector to meet IEC 61000-4-2 ±15 kV contact discharge. Use Value: Preserves signal rise/fall times (<1 ns delay) while suppressing transients - avoids bit errors or enumeration failures. |
Use Scenario: Secondary-side transient suppression on 12 V DC output rails feeding microcontrollers and displays in DIN-rail power supplies. IC Role / Device Role / Timing Role: Parallel-connected TVS absorbing residual surges that pass through primary-stage MOVs and filter chokes. Use Value: Limits rail collapse to ≤12.9 V during 600 W spikes, preventing brownout resets and flash corruption in downstream firmware. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ7.5CAHM3_A/I | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification | Required where halogen-free compliance is mandated (e.g., EU public transport, aerospace wiring standards) | Select when material content restrictions override cost or sourcing preference |
| SMCJ7.5CAHE3_A/I | Same VWM/VBR/VC but in larger SMC (DO-214AB) package; 1500 W PPPM rating vs. 600 W | Used where higher surge energy handling is needed (e.g., 48 V telecom power inputs, solar charge controllers) | Choose only if board space allows SMC footprint and system-level surge testing exceeds 600 W |
Compared with SMBJ7.5CAHE3_A/I, the HM3 variant offers identical protection performance with halogen-free construction, while the SMCJ7.5CAHE3_A/I delivers 2.5× higher pulse power in a larger package - making SMBJ7.5CAHE3_A/I optimal for space-constrained, AEC-Q101–required 600 W applications.
Availability
SMBJ7.5CAHE3_A/I is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive CAN bus nodes, and USB 2.0 peripheral designs requiring stable component supply with AEC-Q101 assurance and full traceability.
Supply support for SMBJ7.5CAHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for robust, low-clamp transient suppression in space-constrained, high-reliability applications - especially where bidirectional symmetry and AEC-Q101 validation are mandatory.
FAQ
What does the "CA" suffix indicate in SMBJ7.5CAHE3_A/I?
The "CA" suffix denotes a bidirectional configuration - meaning SMBJ7.5CAHE3_A/I provides symmetrical transient suppression for both positive and negative voltage excursions. Unlike unidirectional variants (e.g., SMBJ7.5A), it has no cathode marking and functions identically regardless of polarity applied across its terminals, making it ideal for AC signal lines and differential buses like CAN or RS-485.
Is SMBJ7.5CAHE3_A/I suitable for protecting 3.3 V logic circuits?
Yes, SMBJ7.5CAHE3_A/I is appropriate for 3.3 V logic protection when used with proper design margins. Its 7.5 V stand-off voltage (VWM) provides adequate headroom above 3.3 V nominal, and its clamping voltage of ≤12.9 V at 46.5 A ensures downstream ICs remain within absolute maximum ratings during transients. For tighter margining, pairing with series impedance (e.g., 10–100 Ω resistor) further reduces peak voltage seen by the IC.
Does SMBJ7.5CAHE3_A/I require a heatsink for normal operation?
No, SMBJ7.5CAHE3_A/I does not require an external heatsink under typical surge conditions. Its 5.0 W steady-state power dissipation rating assumes operation on standard PCB copper pads (0.2" × 0.2"), and transient events are short-duration (≤1000 µs). Thermal resistance junction-to-ambient (RθJA) is 100 °C/W - sufficient for pulsed operation without sustained heating. Continuous DC leakage remains below 100 µA, generating negligible thermal load.
How does the HE3 suffix affect SMBJ7.5CAHE3_A/I's qualification status?
The HE3 suffix confirms SMBJ7.5CAHE3_A/I is RoHS-compliant and AEC-Q101 qualified - verified through standardized stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling. This certification validates its use in automotive powertrain, chassis, and body electronics where long-term reliability under thermal and electrical stress is non-negotiable.
Can SMBJ7.5CAHE3_A/I be used in place of SMBJ7.5A in a new design?
No - SMBJ7.5CAHE3_A/I and SMBJ7.5A are not functionally interchangeable without circuit review. SMBJ7.5A is unidirectional (cathode-marked, asymmetric conduction), while SMBJ7.5CAHE3_A/I is bidirectional (no marking, symmetric clamping). Substituting one for the other may cause unintended conduction in DC-biased lines or fail to suppress negative transients - always verify polarity requirements and signal topology before replacement.
SMBJ7.5CAHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.33V
- Voltage - Clamping (Max) @ Ipp:
- 12.9V
- Current - Peak Pulse (10/1000µs):
- 46.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ7.5CAHE3_A/I FAQ
1.How can I place an order for SMBJ7.5CAHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ7.5CAHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ7.5CAHE3_A/I reliable?
The price and inventory of SMBJ7.5CAHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ7.5CAHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ7.5CAHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ7.5CAHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ7.5CAHE3_A/I?
SMBJ7.5CAHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ7.5CAHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ7.5CAHE3_A/I?
For technical support, including SMBJ7.5CAHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ7.5CAHE3_A/I requirements.
6.How does Aetrix verify that SMBJ7.5CAHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ7.5CAHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ7.5CAHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ7.5CAHE3_A/I?
All SMBJ7.5CAHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ7.5CAHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ7.5CAHE3_A/I part is unused and in its original packaging.
Return procedure for SMBJ7.5CAHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ7.5CAHE3_A/I Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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