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Vishay General Semiconductor - Diodes Division SMBJ7.5CD-M3/I
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- Part No.:
- SMBJ7.5CD-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ7.5CD-M3/I.pdf
- Description:
- TVS DIODE 7.5VWM 12.7VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:7,588
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Product details
Overview
SMBJ7.5CD-M3/I from Vishay General Semiconductor is a bidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping ESD and surge transients on signal/power lines. It features 7.5 V stand-off voltage (VWM), 8.46–9.08 V breakdown voltage (VBR) at 1 mA, 12.7 V maximum clamping voltage (VC) at 75 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - used to protect I/O ports and sensor interfaces in industrial control systems.
For engineers reviewing the SMBJ7.5CD-M3/I datasheet, SMBJ7.5CD-M3/I pinout, SMBJ7.5CD-M3/I application, or SMBJ7.5CD-M3/I equivalent, this page delivers verified electrical parameters, bidirectional polarity behavior, thermal derating curves, M3-grade halogen-free RoHS compliance, and direct replacement guidance for circuit-level surge protection design.
Technical Context
This bidirectional TVS operates symmetrically across both polarities, with identical VBR min/max (8.46–9.08 V), VC (12.7 V), and IPPM (75 A) in either direction. Its low 12.7 V clamping voltage at rated surge ensures robust protection of 3.3 V and 5 V logic interfaces without overvoltage stress.
Thermal performance is defined by RθJA = 125 °C/W (on minimum pad) and RθJM = 20 °C/W, supporting operation up to TJ = 150 °C. The device meets J-STD-020 MSL Level 1 and JESD 201 Class 2 whisker resistance, enabling high-reliability automated SMT assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 7.5 V - maximum reverse stand-off voltage before significant leakage; sets safe operating margin below system rail voltage |
| VBR (min/max) | 8.46 V / 9.08 V at IT = 1 mA - tight ±3.5 % tolerance ensures predictable turn-on across production lots |
| VC @ IPPM | 12.7 V at 75 A (10/1000 μs) - clamping voltage limits downstream IC stress during lightning/surge events |
| PPPM | 600 W - peak pulse power handling capability under standardized surge waveform per ANSI/IEEE C62.35 |
| ID @ VWM | 75 μA max - ultra-low leakage preserves signal integrity and battery life in always-on sensor nodes |
| TJ max | 150 °C - enables deployment in high-ambient environments such as motor drives and outdoor telecom enclosures |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, M3-grade matte tin-plated terminals. No cathode band - bidirectional symmetry confirmed per Vishay documentation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bidirectional surge conduction path | No polarity marking required; interchangeable connection protects AC-coupled or floating lines without orientation constraints |
| Cathode Band (absent) | Non-applicable | Confirms bidirectional construction - eliminates risk of incorrect orientation during placement |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables precise clamping threshold alignment across batches - critical for protecting narrow-voltage-margin interfaces like USB 2.0 or RS-485 |
| 600 W PPPM (10/1000 μs) | Withstands IEC 61000-4-5 Level 4 surges (4 kV line-earth) when properly laid out - validated for industrial port protection |
| MSL Level 1, 260 °C reflow | Supports single-pass lead-free reflow without popcorn cracking or delamination - compatible with standard SMT lines |
| Low 12.7 V VC at 75 A | Clamps transients below absolute maximum ratings of common 3.3 V microcontrollers and CAN transceivers |
| M3 suffix (JESD 201 Class 2) | Guarantees tin whisker mitigation for >10-year field reliability in automotive and infrastructure applications |
Applications
| Industrial Sensor Interface Protection | RS-485/RS-422 Bus Protection |
|---|---|
Use Scenario: Protecting analog output lines (4–20 mA) and digital I/O of PLC modules exposed to inductive switching noise and ground bounce. IC Role / Device Role / Timing Role: Bidirectional clamping element placed directly at connector entry point to shunt surge energy before reaching ADC or GPIO. Use Value: 12.7 V clamping voltage prevents latch-up in 3.3 V/5 V signal conditioning ICs while maintaining <75 μA leakage at 7.5 V operating bias. |
Use Scenario: Safeguarding half-duplex differential bus transceivers in factory automation networks subject to cable discharge events and lightning-induced surges. IC Role / Device Role / Timing Role: Common-mode TVS pair (one per line) referenced to ground, absorbing asymmetrical transients without distorting differential signaling. Use Value: Symmetrical bidirectional response ensures equal clamping on A and B lines, preserving common-mode rejection ratio (CMRR) during surge events. |
| USB Port ESD Protection | Automotive Body Control Module Inputs |
Use Scenario: Secondary-level ESD protection on USB 2.0 D+/D− lines behind primary polymer-based TVS, meeting IEC 61000-4-2 ±15 kV contact discharge. IC Role / Device Role / Timing Role: Fast-response silicon TVS providing sub-nanosecond clamping to limit voltage overshoot during ESD strikes. Use Value: 12.7 V VC ensures D+ and D− remain within ±15 V absolute maximum rating of USB PHY ICs during transient events. |
Use Scenario: Input protection for wake-up pins and switch sense inputs in BCMs connected to door handles, trunk latches, and mirror controls. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing load dump spikes and ISO 7637-2 Pulse 1/2a transients on 12 V supply rails feeding microcontroller inputs. Use Value: 7.5 V VWM allows reliable operation across cold-crank (6.0 V) to load-dump (16 V) conditions while clamping surges to safe levels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ7.5CA-M3/8B (Vishay) | Same VWM/VBR/VC specs; differs only in tape-and-reel packaging (3,000 pcs vs. 3,200 pcs) and reel diameter (13″ vs. 8″) | No functional difference - identical electrical and thermal performance; suitable for same PCB layout and qualification | Select SMBJ7.5CA-M3/8B only if procurement requires smaller reel size or legacy inventory alignment |
| P6SMB7.5CA (Littelfuse) | Identical SMB package, 7.5 V VWM, 8.33–9.21 V VBR, 12.9 V VC @ 75 A - ±3.7 % VBR tolerance vs. ±3.5 % for SMBJ7.5CD-M3/I | Validated for same IEC 61000-4-5 and ISO 7637-2 surge standards; slightly higher clamping voltage increases margin stress on protected ICs | Choose P6SMB7.5CA only when cross-supplier sourcing is required; verify layout compatibility due to minor footprint variance in cathode marking area |
Compared with SMBJ7.5CD-M3/I, SMBJ7.5CA-M3/8B offers identical protection performance in alternate packaging, while P6SMB7.5CA provides functionally similar clamping with marginally looser VBR tolerance and higher VC - requiring review of downstream IC voltage margins before substitution.
Availability
SMBJ7.5CD-M3/I is available at Aetrix Electronics and suitable for industrial sensor interfaces, RS-485 bus protection, and automotive body control module inputs requiring stable component supply and long-term lifecycle assurance.
Supply support for SMBJ7.5CD-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for demanding industrial and automotive applications.
The SMBJ series targets board-level transient protection in space-constrained designs, delivering high-power surge handling in low-profile SMB packages for use in harsh electromagnetic environments.
FAQ
What is the polarity configuration of SMBJ7.5CD-M3/I?
The SMBJ7.5CD-M3/I is a bidirectional TVS diode with symmetrical anode/cathode terminals and no cathode band marking. Its electrical characteristics - including VBR, VC, and IPPM - apply identically in both directions, making it ideal for AC-coupled or floating signal lines where polarity cannot be guaranteed. This behavior is explicitly confirmed in Vishay's datasheet revision 09-Jan-2024, Document Number 87606.
Does SMBJ7.5CD-M3/I meet automotive AEC-Q200 requirements?
The SMBJ7.5CD-M3/I is not AEC-Q200 qualified. While it meets JESD 201 Class 2 whisker resistance and J-STD-020 MSL Level 1, Vishay does not list this part in its AEC-Q200-certified portfolio. For automotive applications requiring qualification, engineers should select Vishay's AEC-Q200-compliant alternatives such as the SMAJ7.5CAQ series - the SMBJ7.5CD-M3/I remains suitable for non-qualified industrial and consumer designs.
What is the maximum clamping voltage of SMBJ7.5CD-M3/I under surge conditions?
The SMBJ7.5CD-M3/I has a maximum clamping voltage (VC) of 12.7 V at 75 A peak pulse current with a 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 and represents the upper voltage limit imposed on protected circuitry during standardized surge events - critical for ensuring compatibility with 3.3 V and 5 V ICs' absolute maximum ratings.
How does the M3 suffix affect SMBJ7.5CD-M3/I's reliability?
The M3 suffix on SMBJ7.5CD-M3/I indicates halogen-free, RoHS-compliant construction with matte tin-plated leads that pass JESD 201 Class 2 whisker testing. This ensures long-term interconnect reliability in high-humidity or high-temperature environments, preventing tin whisker growth that could cause latent short circuits - a key requirement for industrial and infrastructure deployments exceeding 10-year service life.
Can SMBJ7.5CD-M3/I replace unidirectional SMBJ7.5D-M3/I in existing designs?
No - SMBJ7.5CD-M3/I cannot directly replace unidirectional SMBJ7.5D-M3/I without circuit review. Although both share identical VWM (7.5 V), VBR, and VC, the unidirectional version includes a cathode band and conducts only in reverse bias, whereas SMBJ7.5CD-M3/I clamps in both directions. Substitution may cause unintended conduction in DC-biased lines or disrupt bias networks; redesign verification is mandatory before interchange.
SMBJ7.5CD-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.46V
- Voltage - Clamping (Max) @ Ipp:
- 12.7V
- Current - Peak Pulse (10/1000µs):
- 47.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ7.5CD-M3/I FAQ
1.How can I place an order for SMBJ7.5CD-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ7.5CD-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ7.5CD-M3/I reliable?
The price and inventory of SMBJ7.5CD-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ7.5CD-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ7.5CD-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ7.5CD-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ7.5CD-M3/I?
SMBJ7.5CD-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ7.5CD-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ7.5CD-M3/I?
For technical support, including SMBJ7.5CD-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ7.5CD-M3/I requirements.
6.How does Aetrix verify that SMBJ7.5CD-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ7.5CD-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ7.5CD-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ7.5CD-M3/I?
All SMBJ7.5CD-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ7.5CD-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ7.5CD-M3/I part is unused and in its original packaging.
Return procedure for SMBJ7.5CD-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ7.5CD-M3/I Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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