Vishay General Semiconductor - Diodes Division SMBJ75C-E3/5B
- Part No.:
- SMBJ75C-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ75C-E3/5B.pdf
- Description:
- TVS DIODE 75VWM 134VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ75C-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed to protect sensitive electronics against voltage transients induced by inductive load switching and lightning surges. It features a 75 V stand-off voltage (VWM), 83.3–92.1 V breakdown voltage (VBR) at 1 mA, 121 V maximum clamping voltage (VC) at 5.0 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed on IC power rails, MOSFET gate drivers, and sensor signal lines in industrial motor controls.
For engineers reviewing the SMBJ75C-E3/5B datasheet, SMBJ75C-E3/5B pinout, SMBJ75C-E3/5B application, or SMBJ75C-E3/5B equivalent, this page delivers verified electrical parameters, thermal derating behavior, clamping performance under surge conditions, JEDEC-compliant SMB package dimensions, and AEC-Q101-qualified alternatives for automotive-grade design validation.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-banded polarity, leveraging a glass-passivated silicon junction to achieve sub-nanosecond response time and low incremental surge resistance. Its 121 V clamping voltage at 5.0 A ensures robust overvoltage protection for 75 V nominal systems while maintaining <1.0 µA reverse leakage at VWM.
Thermal performance is defined by RθJA = 100 °C/W (typ.) and RθJL = 20 °C/W (typ.), enabling reliable operation up to TJ = +150 °C. The device meets MSL Level 1 per J-STD-020 and supports reflow soldering with peak temperature of 260 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 75 V - Maximum continuous reverse operating voltage before significant leakage; sets system-level DC rail protection threshold. |
| VBR (min/max) | 83.3 V / 92.1 V at IT = 1 mA - Confirmed breakdown range ensures predictable turn-on during transients without premature conduction. |
| VC @ IPPM | 121 V at 5.0 A - Clamping voltage limits downstream component stress during 600 W surge events (10/1000 µs). |
| PPPM | 600 W - Peak pulse power handling capacity defines survivability under standardized lightning/surge waveforms. |
| IFSM | 100 A - Single half-sine surge current rating (8.3 ms) validates robustness against inductive switch-off spikes. |
| TJ max. | +150 °C - Maximum junction temperature enables deployment in high-ambient environments like motor drive enclosures. |
| RθJA | 100 °C/W - Thermal resistance determines required PCB copper area (0.2" × 0.2") for safe power dissipation at 5.0 W. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant (E3 suffix), MSL Level 1, 260 °C reflow peak.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Surge return path | Connected to ground or low-impedance return plane; completes clamping loop during transient events. |
| Cathode | Protected line connection / Surge sink node | Banded end connects to protected line (e.g., 75 V supply rail); conducts surge current into ground when VIN exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables single-device protection against IEC 61000-4-5 Level 4 surges (4 kV/2 Ω) on 75 V systems. |
| 121 V clamping voltage at 5.0 A | Limits voltage overshoot to ≤61% above VWM, preserving margin for 100 V-rated downstream components. |
| Glass passivated chip junction | Ensures stable VBR tolerance and long-term reliability under thermal cycling and humidity exposure. |
| MSL Level 1, 260 °C reflow compatible | Supports standard SMT assembly without pre-baking or special handling requirements. |
| Low incremental surge resistance | Minimizes VC rise under high di/dt events, improving clamping precision for fast-rising transients. |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
|
Use Scenario: Protection of 75 V auxiliary power rails feeding microcontrollers and CAN transceivers in electric power steering units. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between 75 V input and ground, activated within <1 ns upon overvoltage detection. Use Value: Prevents latch-up or gate oxide damage in 75 V-rated power management ICs during load dump events per ISO 7637-2 Pulse 5a. |
Use Scenario: Surge suppression on LIN bus lines connected to door module actuators exposed to ESD and cable discharge events. IC Role / Device Role / Timing Role: Standby-mode TVS shunt element absorbing ±30 kV HBM ESD pulses while maintaining <1 µA leakage at 12 V standby. Use Value: Maintains LIN signal integrity below 12 V threshold during transients, avoiding false wake-up or communication loss. |
| Telecom Power Feeds | Renewable Energy Inverters |
|
Use Scenario: Input-stage protection for 75 V PoE++ (IEEE 802.3bt Type 4) powered devices subjected to Ethernet cable-induced surges. IC Role / Device Role / Timing Role: Primary clamping device parallel to DC-DC converter input, conducting >95% of 10/1000 µs surge energy. Use Value: Limits input voltage to ≤121 V during 4 kV surges, preventing overvoltage shutdown of 100 V-input buck controllers. |
Use Scenario: DC-link overvoltage suppression in 75 V battery-side circuits of residential solar microinverters during rapid MPPT transients. IC Role / Device Role / Timing Role: Fast-response voltage clamp across battery terminals, triggered by dV/dt >100 V/µs during MOSFET commutation faults. Use Value: Absorbs 600 W surge energy without degradation, extending capacitor lifetime by reducing voltage stress peaks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ75A-E3/5B | Unidirectional variant with identical VWM, VBR, and VC; same SMB package and RoHS/E3 compliance. | No functional difference - SMBJ75C-E3/5B and SMBJ75A-E3/5B are identical in electrical specs and marking; "C" vs "A" reflects legacy ordering code variation, not performance distinction. | Select SMBJ75A-E3/5B if cross-referenced in legacy BOMs; both are electrically interchangeable with no design impact. |
| SMBJ75CA-E3/5B | Bidirectional version: symmetric VBR (±83.3–92.1 V), same VC (121 V), but double the capacitance and no polarity marking. | Required only for AC-coupled or bidirectional signal lines (e.g., RS-485, CAN FD); unsuitable for DC rail protection where polarity matters. | Choose SMBJ75CA-E3/5B only when protecting balanced differential buses; otherwise, SMBJ75C-E3/5B provides optimal unidirectional clamping efficiency. |
Compared with SMBJ75A-E3/5B, SMBJ75C-E3/5B offers identical clamping performance and thermal behavior but aligns with updated Vishay part numbering conventions; versus SMBJ75CA-E3/5B, it delivers lower junction capacitance and avoids unnecessary bidirectional conduction paths in DC applications.
Availability
SMBJ75C-E3/5B is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, telecom power feeds, and renewable energy inverters requiring stable component supply, traceable sourcing, and long-term lifecycle support.
Supply support for SMBJ75C-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, power efficiency, and AEC-Q qualification.
The SMBJ series was engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where failure modes must be mitigated without compromising signal integrity or thermal stability.
FAQ
What is the breakdown voltage range of SMBJ75C-E3/5B?
The SMBJ75C-E3/5B has a guaranteed breakdown voltage (VBR) range of 83.3 V to 92.1 V at test current IT = 1 mA, measured per ANSI/IEEE C62.35 standards. This range ensures consistent clamping onset across manufacturing lots and temperature extremes, directly supporting 75 V system-level surge protection design margins.
Is SMBJ75C-E3/5B RoHS-compliant and halogen-free?
Yes, SMBJ75C-E3/5B carries the "E3" suffix, indicating full RoHS compliance per EU Directive 2011/65/EU and exemption 7a. It is not halogen-free; for halogen-free versions, specify "M3" suffix (e.g., SMBJ75C-M3/5B). Both meet JESD201 Class 2 whisker resistance and UL 94 V-0 flammability requirements.
What is the maximum clamping voltage for SMBJ75C-E3/5B under surge conditions?
The SMBJ75C-E3/5B exhibits a maximum clamping voltage (VC) of 121 V at 5.0 A peak pulse current (IPPM) using the standardized 10/1000 µs waveform. This value is measured under JEDEC-defined test conditions and defines the upper voltage limit imposed on protected circuitry during worst-case transient events.
Can SMBJ75C-E3/5B be used in automotive applications?
SMBJ75C-E3/5B itself is commercial-grade; however, its AEC-Q101-qualified counterpart SMBJ75CHE3_B/I is available for automotive use. While SMBJ75C-E3/5B shares identical electrical specs, only the HE3-suffixed variant undergoes extended temperature cycling, humidity testing, and failure analysis required for under-hood deployment per AEC-Q101 Rev D.
What PCB pad layout is recommended for SMBJ75C-E3/5B thermal performance?
Vishay specifies a minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad per terminal for SMBJ75C-E3/5B to achieve the rated RθJA = 100 °C/W. Reducing pad area increases thermal resistance, degrading power handling and accelerating junction temperature rise during repetitive surges - especially critical in enclosed industrial enclosures.
SMBJ75C-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 75V
- Voltage - Breakdown (Min):
- 83.3V
- Voltage - Clamping (Max) @ Ipp:
- 134V
- Current - Peak Pulse (10/1000µs):
- 4.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ75C-E3/5B FAQ
1.How can I place an order for SMBJ75C-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ75C-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ75C-E3/5B reliable?
The price and inventory of SMBJ75C-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ75C-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ75C-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ75C-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ75C-E3/5B?
SMBJ75C-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ75C-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ75C-E3/5B?
For technical support, including SMBJ75C-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ75C-E3/5B requirements.
6.How does Aetrix verify that SMBJ75C-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ75C-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ75C-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ75C-E3/5B?
All SMBJ75C-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ75C-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ75C-E3/5B part is unused and in its original packaging.
Return procedure for SMBJ75C-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ75C-E3/5B Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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