Vishay General Semiconductor - Diodes Division SMBJ7.5HE3/5B
- Part No.:
- SMBJ7.5HE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ7.5HE3/5B.pdf
- Description:
- TVS DIODE 7.5VWM 14.3VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ7.5HE3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 7.5 V stand-off voltage (VWM), 8.33–9.21 V breakdown voltage (VBR) at 1 mA, 12.9 V maximum clamping voltage (VC) at 46.5 A peak pulse current (IPPM), and 600 W peak pulse power (PPPM) with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial and automotive electronics.
For engineers reviewing the SMBJ7.5HE3/5B datasheet, SMBJ7.5HE3/5B pinout, SMBJ7.5HE3/5B application, or SMBJ7.5HE3/5B equivalent, key selection criteria include clamping performance under 46.5 A surge, unidirectional polarity with cathode band marking, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a voltage-clamping protection device triggered by overvoltage events such as inductive load switching or ESD. Its glass-passivated junction ensures stable breakdown behavior, while low incremental surge resistance enables rapid energy diversion before downstream components are stressed.
The SMBJ7.5HE3/5B is rated for -55 °C to +150 °C operating junction temperature, meets MSL Level 1 per J-STD-020 (reflow peak 260 °C), and supports repetitive surge duty cycle of 0.01 % - making it suitable for high-reliability embedded systems where transient immunity must be maintained across thermal and lifecycle stress conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 7.5 V - maximum continuous reverse voltage before significant leakage; defines normal operating margin below clamping threshold |
| VBR (Breakdown Voltage) | 8.33–9.21 V at IT = 1.0 mA - guaranteed conduction onset range; ensures predictable turn-on during transients |
| VC (Clamping Voltage) | 12.9 V at IPPM = 46.5 A - peak voltage seen by protected circuit during 600 W surge; critical for IC I/O voltage tolerance |
| PPPM (Peak Pulse Power) | 600 W with 10/1000 µs waveform - standardized surge energy handling capacity; validated per ANSI/IEEE C62.35 |
| ID (Reverse Leakage) | 100 µA max at VWM - minimal standby power loss and signal integrity impact in high-impedance circuits |
| TJ max. | +150 °C - enables operation in under-hood automotive or industrial environments without derating at full power |
| RθJA | 100 °C/W - thermal resistance from junction to ambient on standard 0.2" × 0.2" copper pads; informs board-level thermal design |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity indicated by cathode band on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | High-side connection in unidirectional configuration | Connected to protected line (e.g., VBUS or signal); conducts when line exceeds VBR relative to anode ground reference |
| Anode | Low-side / ground reference terminal | Typically tied to system ground or return path; completes clamping loop during transient events |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance - required for engine control, ADAS, and body electronics |
| 600 W peak pulse power | Handles IEC 61000-4-5 Level 4 surges (4 kV/2 Ω) without degradation when mounted per recommended pad layout |
| Glass passivated junction | Ensures stable VBR over time and temperature; eliminates parameter drift common in epoxy-passivated alternatives |
| MSL Level 1 rating | Supports single-reflow assembly at 260 °C peak without popcorn or delamination risk - compatible with standard lead-free SMT processes |
| Low clamping ratio (VC/VBR ≈ 1.55) | Minimizes overvoltage exposure to downstream ICs; superior to many competing TVS diodes with ratios > 1.7 |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed microcontroller power inputs against load dump and alternator transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBAT and GND, clamping spikes above 12 V before they reach LDO or MCU VDD pins. Use Value: Withstands 600 W surges and maintains <12.9 V clamping at 46.5 A, ensuring MCU reset logic remains functional during ISO 7637-2 Pulse 5a events. |
Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loop) from ESD and cable discharge events in factory automation. IC Role / Device Role / Timing Role: TVS connected across signal and return paths to shunt fast transients before reaching op-amp or ADC input stages. Use Value: 100 µA max leakage at 7.5 V preserves loop accuracy; 12.9 V clamping prevents op-amp saturation during ±8 kV contact ESD per IEC 61000-4-2. |
| Consumer USB Port ESD Protection | Telecom DC Power Input Protection |
|
Use Scenario: Safeguarding USB VBUS and D+/D- lines in portable chargers and docking stations against human-body-model ESD. IC Role / Device Role / Timing Role: Unidirectional SMBJ7.5HE3/5B applied on VBUS rail only; bidirectional variants used for data lines. Use Value: Fast response time (<1 ns) and low VC limit voltage overshoot to safe levels for USB PHY ICs rated for ≤16 V absolute maximum. |
Use Scenario: Guarding -48 V telecom power supplies against lightning-induced surges entering via outdoor cabling. IC Role / Device Role / Timing Role: TVS installed at front-end rectifier output to clamp induced positive-going transients before DC-DC converter stage. Use Value: 600 W rating and 150 °C TJ max enable sustained operation in sealed enclosures; RoHS-compliant HE3 suffix meets telco environmental compliance requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ7.5A-E3/5B | Commercial-grade (non-AEC-Q101), same electrical specs and SMB package | Lacks automotive qualification; unsuitable for under-hood or safety-critical modules | Select when cost sensitivity outweighs automotive reliability requirements |
| SAC7.5 | Same VWM and VC, but DO-214AC (SMA) package; 400 W PPPM rating | Lower surge capacity and higher RθJA (120 °C/W); requires larger PCB area for thermal relief | Choose only if SMB footprint unavailable and 400 W surge margin is sufficient |
Compared with SMBJ7.5A-E3/5B, the SMBJ7.5HE3/5B adds AEC-Q101 qualification without changing clamping or thermal performance; versus SAC7.5, it delivers 50 % higher surge power in a thermally superior package - making it the preferred choice for automotive and industrial designs demanding proven reliability and robust transient handling.
Availability
SMBJ7.5HE3/5B is available at Aetrix Electronics and suitable for automotive ECUs, industrial PLC I/O modules, telecom power supplies, and consumer USB charging systems requiring stable component supply and long-term manufacturing continuity.
Supply support for SMBJ7.5HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series targets high-energy transient suppression in space-constrained, high-reliability applications - engineered for automotive, industrial, and telecom systems where failure due to voltage surges must be eliminated.
FAQ
What is the clamping voltage of SMBJ7.5HE3/5B at its rated peak pulse current?
The SMBJ7.5HE3/5B has a maximum clamping voltage (VC) of 12.9 V at 46.5 A peak pulse current (IPPM), measured using the standard 10/1000 µs waveform. This value is guaranteed across temperature and lifetime, and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ7.5HE3/5B maintains this clamping performance while delivering 600 W of transient power dissipation.
Is SMBJ7.5HE3/5B suitable for automotive applications?
Yes, SMBJ7.5HE3/5B is AEC-Q101 qualified, meaning it has passed rigorous stress tests including temperature cycling, highly accelerated life testing (HALT), and surge endurance - specifically intended for automotive powertrain, chassis, and body electronics. The "HE3" suffix explicitly denotes RoHS-compliant and AEC-Q101 qualified construction, distinguishing it from commercial-grade variants like SMBJ7.5A-E3/5B.
What does the "5B" in SMBJ7.5HE3/5B indicate?
The "5B" in SMBJ7.5HE3/5B refers to the packaging configuration: 13-inch diameter plastic tape and reel, with a base quantity of 3200 units per reel. This format supports high-volume automated SMT placement and is compatible with standard pick-and-place equipment. The "HE3" portion confirms RoHS compliance and AEC-Q101 qualification, while "5B" specifies logistics and handling - not electrical or thermal characteristics.
How does SMBJ7.5HE3/5B differ from bidirectional TVS diodes like SMBJ7.5CA?
The SMBJ7.5HE3/5B is unidirectional and features a cathode band for polarity identification, conducting only during reverse-biased overvoltage events - ideal for DC power rail protection. In contrast, SMBJ7.5CA is bidirectional, symmetric in both directions, and used for AC signal lines or differential buses. Their breakdown voltages differ: SMBJ7.5HE3/5B has VBR = 8.33–9.21 V, while SMBJ7.5CA has VBR = 6.4–7.25 V. The SMBJ7.5HE3/5B cannot replace SMBJ7.5CA in AC-coupled applications.
What PCB layout guidance applies to SMBJ7.5HE3/5B for optimal thermal and surge performance?
For optimal performance, mount SMBJ7.5HE3/5B on minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as specified in the Vishay datasheet. Use short, wide traces to minimize inductance, avoid thermal reliefs on pads, and ensure solid inner-layer ground planes beneath the device. This layout achieves the rated RθJA = 100 °C/W and supports full 600 W surge capability without junction overheating. The SMBJ7.5HE3/5B thermal performance degrades significantly with smaller pads or isolated traces.
SMBJ7.5HE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.33V
- Voltage - Clamping (Max) @ Ipp:
- 14.3V
- Current - Peak Pulse (10/1000µs):
- 42A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ7.5HE3/5B FAQ
1.How can I place an order for SMBJ7.5HE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ7.5HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ7.5HE3/5B reliable?
The price and inventory of SMBJ7.5HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ7.5HE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ7.5HE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ7.5HE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ7.5HE3/5B?
SMBJ7.5HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ7.5HE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ7.5HE3/5B?
For technical support, including SMBJ7.5HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ7.5HE3/5B requirements.
6.How does Aetrix verify that SMBJ7.5HE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ7.5HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ7.5HE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ7.5HE3/5B?
All SMBJ7.5HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ7.5HE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ7.5HE3/5B part is unused and in its original packaging.
Return procedure for SMBJ7.5HE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ7.5HE3/5B Tags

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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