Vishay General Semiconductor - Diodes Division SMBJ78AHE3/52
- Part No.:
- SMBJ78AHE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ78AHE3/52.pdf
- Description:
- TVS DIODE 78VWM 126VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:5,419
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ78AHE3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 78 V stand-off voltage (VWM), 86.7–95.8 V breakdown voltage (VBR) at 1 mA, 126 V maximum clamping voltage (VC) at 4.8 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive power electronics, industrial sensor interfaces, and telecom front-end protection.
For engineers reviewing the SMBJ78AHE3/52 datasheet, SMBJ78AHE3/52 pinout, SMBJ78AHE3/52 application, or SMBJ78AHE3/52 equivalent, this device delivers AEC-Q101 qualification, low incremental surge resistance, fast sub-nanosecond response time, and MSL Level 1 moisture sensitivity - critical for high-reliability board-level ESD and lightning surge suppression in harsh environments.
Technical Context
This unidirectional TVS diode operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>1 µA leakage at 78 V), then rapidly avalanches to clamp transients above its breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance (±5%) and long-term reliability across -55 °C to +150 °C junction temperature range.
The SMBJ78AHE3/52 uses a single PN junction with cathode-band polarity marking, optimized for automated SMT placement on 0.2" × 0.2" copper pads. Thermal resistance is 100 °C/W (junction-to-ambient) and 20 °C/W (junction-to-lead), enabling effective power dissipation during repetitive 0.01% duty-cycle surges without derating below 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 78 V - Maximum continuous reverse operating voltage before conduction begins; defines safe DC rail margin for 72–80 V systems. |
| VBR (min/max) | 86.7 V / 95.8 V at 1 mA - Tight breakdown window ensures predictable turn-on and avoids false triggering near nominal rail. |
| VC @ IPPM | 126 V at 4.8 A - Clamping voltage limits downstream IC stress during 600 W transient events (10/1000 µs). |
| PPPM | 600 W - Peak pulse power handling capacity per single transient event; validated per ANSI/IEEE C62.35. |
| IFSM | 100 A - Non-repetitive forward surge current rating (8.3 ms half-sine), supporting inrush and fault-current scenarios. |
| TJ max. | +150 °C - Maximum junction temperature enables operation in under-hood automotive or enclosed industrial enclosures. |
| MSL Level | Level 1 (J-STD-020) - No floor life limitation; supports standard reflow without baking prior to assembly. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to protected line's lower-potential side (e.g., GND or negative rail); completes clamping loop during overvoltage. |
| Cathode | Reverse-biased terminal / clamping node | Connected to protected line's higher-potential side (e.g., +78 V rail); avalanche conduction initiates here during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - suitable for engine control, ADAS, and infotainment modules. |
| 600 W peak pulse power (10/1000 µs) | Withstands IEC 61000-4-5 Level 4 surge (4 kV line-earth) without degradation when mounted per recommended pad layout. |
| Low clamping ratio (VC/VBR ≈ 1.32) | Minimizes voltage overshoot during clamping - critical for protecting 80 V-rated MOSFETs and gate drivers in 48 V systems. |
| MSL Level 1 & RoHS-compliant | Enables direct placement into high-volume SMT lines without moisture sensitivity concerns or lead-free compliance barriers. |
| Fast response time (<1 ns) | Clamps ESD transients (IEC 61000-4-2 ±8 kV contact) before sensitive logic or analog circuitry sustains damage. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 48 V battery-fed ECUs against load dump (ISO 7637-2 Pulse 5a) and alternator transients. IC Role / Device Role / Timing Role: Shunt TVS placed between 48 V rail and chassis ground to clamp spikes up to 120 V within nanoseconds. Use Value: Prevents latch-up or gate oxide rupture in buck controllers and CAN transceivers exposed to >100 V transients. |
Use Scenario: Safeguarding 24 V analog input channels of PLC I/O modules from field-wiring induced surges. IC Role / Device Role / Timing Role: Unidirectional clamping element on sensor supply line, coordinated with series ferrite and RC filter. Use Value: Maintains signal integrity while limiting transient energy to <10 mJ - preserving 16-bit ADC accuracy and isolation barrier integrity. |
| Telecom DC Power Feeds | Motor Drive Gate Driver Protection |
Use Scenario: Secondary-side overvoltage suppression on -48 V telecom rectifier outputs feeding base station RF amplifiers. IC Role / Device Role / Timing Role: Standoff-rated TVS parallel to bulk capacitor, absorbing coupled lightning surges from AC mains or antenna ports. Use Value: Limits clamped voltage to 126 V - well below 150 V absolute max rating of GaN FETs and op-amps in RF bias chains. |
Use Scenario: Clamping Miller-induced voltage spikes on high-side gate driver supplies in 3-phase inverters. IC Role / Device Role / Timing Role: Localized TVS on isolated 15 V gate supply rail, placed adjacent to driver IC to minimize loop inductance. Use Value: Suppresses >100 V ringing events before they exceed gate oxide breakdown thresholds of SiC MOSFETs (typically 20–25 V). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ78AE3/52 | Commercial-grade (non-AEC-Q101); identical electrical specs but no automotive qualification testing. | Limited to non-automotive industrial or consumer use where extended temperature cycling and HTRB validation not required. | Select when cost sensitivity outweighs automotive reliability requirements and full AEC-Q101 traceability is unnecessary. |
| SMCJ78AHE3/52 | Same VWM/VBR/VC, but in larger SMC (DO-214AB) package with 1500 W PPPM and lower RθJA (60 °C/W). | Better suited for high-energy surge environments (e.g., outdoor telecom cabinets) where PCB space allows larger footprint. | Choose when system-level surge tests exceed 600 W or thermal management requires lower junction rise per watt. |
Compared with SMBJ78AHE3/52, the SMBJ78AE3/52 offers identical clamping performance at lower cost but lacks automotive qualification, while the SMCJ78AHE3/52 trades compact SMB size for higher surge capacity and improved thermal dissipation - making each optimal for distinct mechanical and reliability constraints.
Availability
SMBJ78AHE3/52 is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interface design, and telecom DC feed protection requiring stable component supply, AEC-Q101 traceability, and consistent 78 V standoff performance across production lots.
Supply support for SMBJ78AHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, precision, and application-specific optimization.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-speed, high-energy transient suppression in automotive, industrial, and communications infrastructure - balancing compact size, repeatable clamping, and ruggedized packaging.
FAQ
What is the maximum clamping voltage of SMBJ78AHE3/52 and under what test condition?
The SMBJ78AHE3/52 has a maximum clamping voltage (VC) of 126 V, measured at a peak pulse current (IPPM) of 4.8 A using the standardized 10/1000 µs double-exponential waveform. This value is guaranteed across the full operating temperature range (-55 °C to +150 °C) and defines the upper voltage limit imposed on protected circuitry during transient events.
Is SMBJ78AHE3/52 suitable for bidirectional transient protection?
No, SMBJ78AHE3/52 is a unidirectional TVS diode, intended only for DC circuits with defined polarity. For bidirectional protection (e.g., AC lines or data buses), Vishay specifies the CA-suffix variant - such as SMBJ78CAHE3/52 - which provides symmetrical clamping in both directions and uses different breakdown and clamping parameters.
Does SMBJ78AHE3/52 require derating at elevated ambient temperatures?
Yes, SMBJ78AHE3/52 must be derated above 25 °C ambient per Figure 2 in the datasheet. Its peak pulse power capability decreases linearly: at 85 °C ambient, PPPM is reduced to approximately 420 W, and at 125 °C, it falls to ~270 W - requiring careful thermal design and layout verification for high-temperature deployments.
What does the "HE3" suffix indicate in SMBJ78AHE3/52?
The "HE3" suffix in SMBJ78AHE3/52 denotes RoHS-compliant construction with AEC-Q101 qualification - confirming that the device meets automotive-grade reliability standards including temperature cycling, highly accelerated life testing (HALT), and electrostatic discharge (ESD) robustness per JESD22-A114.
Can SMBJ78AHE3/52 be used in parallel to increase surge current handling?
No - SMBJ78AHE3/52 should not be paralleled without external balancing resistors. Due to VBR tolerance (±5%), mismatched avalanche turn-on can cause current hogging, leading to premature failure of one device. For higher surge ratings, select the physically larger SMCJ78AHE3/52 instead.
SMBJ78AHE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 78V
- Voltage - Breakdown (Min):
- 86.7V
- Voltage - Clamping (Max) @ Ipp:
- 126V
- Current - Peak Pulse (10/1000µs):
- 4.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ78AHE3/52 FAQ
1.How can I place an order for SMBJ78AHE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ78AHE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ78AHE3/52 reliable?
The price and inventory of SMBJ78AHE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ78AHE3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ78AHE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ78AHE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ78AHE3/52?
SMBJ78AHE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ78AHE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ78AHE3/52?
For technical support, including SMBJ78AHE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ78AHE3/52 requirements.
6.How does Aetrix verify that SMBJ78AHE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ78AHE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ78AHE3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ78AHE3/52?
All SMBJ78AHE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ78AHE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ78AHE3/52 part is unused and in its original packaging.
Return procedure for SMBJ78AHE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ78AHE3/52 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)