Vishay General Semiconductor - Diodes Division SMBJ78AHE3_A/I
- Part No.:
- SMBJ78AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ78AHE3_A/I.pdf
- Description:
- TVS DIODE 78VWM 126VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ78AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 78 V stand-off voltage (VWM), 86.7–95.8 V breakdown voltage (VBR) at 1 mA, 126 V maximum clamping voltage (VC) at 4.8 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive ECUs, industrial PLC I/O modules, and telecom power supplies.
For engineers reviewing the SMBJ78AHE3_A/I datasheet, SMBJ78AHE3_A/I pinout, SMBJ78AHE3_A/I application, or SMBJ78AHE3_A/I equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (−55 to +150 °C), and packaging details (tape-and-reel, 3200 pcs per 13″ reel) critical for ESD/surge design validation and long-term reliability planning.
Technical Context
This TVS diode operates as a unidirectional clamping device: reverse-biased during normal operation (blocking up to 78 V), then rapidly avalanching into low-impedance conduction when transients exceed VBR. Its glass-passivated junction ensures stable leakage (<1.0 µA at VWM) and repeatable clamping performance across temperature.
Designed for high-energy surge suppression, it handles 4.8 A peak pulse current (IPPM) under 10/1000 µs waveform while maintaining VC ≤ 126 V - enabling effective protection of downstream MOSFETs, ICs, and sensor interfaces without excessive voltage overshoot.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 78 V - Maximum continuous reverse operating voltage before significant leakage; defines safe DC rail margin. |
| VBR (min/max) | 86.7 V / 95.8 V at 1 mA - Confirmed avalanche onset range; ensures predictable turn-on during transients. |
| VC @ IPPM | 126 V at 4.8 A - Clamped voltage seen by protected circuit; determines minimum withstand rating of downstream components. |
| PPPM | 600 W - Peak pulse power handling with 10/1000 µs waveform; validates suitability for IEC 61000-4-5 Level 4 surges. |
| IPPM | 4.8 A - Peak surge current capability; directly supports 10/1000 µs transient energy absorption. |
| TJ max. | +150 °C - Maximum junction temperature; enables operation in under-hood automotive and high-ambient industrial environments. |
| RθJA | 100 °C/W - Thermal resistance junction-to-ambient on standard PCB pads; informs derating requirements above 25 °C. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and AEC-Q101 qualified. Cathode indicated by band marking on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference | Connected to ground or low-side return path; establishes polarity-sensitive clamping direction. |
| Cathode | Reverse voltage input / Surge current sink | Connected to protected line (e.g., 78 V supply rail); conducts transient energy to ground during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, ADAS sensors, and infotainment power rails. |
| 600 W peak pulse power (10/1000 µs) | Meets IEC 61000-4-5 surge immunity requirements for industrial and telecom equipment. |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage (<1.0 µA) over lifetime and temperature cycling. |
| MSL Level 1 (260 °C peak reflow) | Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns. |
| Low clamping ratio (VC/VBR ≈ 1.32) | Minimizes overvoltage stress on protected ICs compared to higher-ratio TVS devices. |
Applications
| Automotive Power Rail Protection | Industrial PLC Digital I/O Protection |
|---|---|
Use Scenario: Protecting 78 V auxiliary power rail in vehicle body control module against load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between rail and chassis ground. Use Value: Limits transient voltage to ≤126 V, safeguarding 100 V-rated DC-DC converters and microcontrollers without derating. |
Use Scenario: Shielding 24–48 V digital input channels in programmable logic controller against field-wiring surge events. IC Role / Device Role / Timing Role: Standoff-clamp TVS connected across input terminal and common reference. Use Value: Absorbs 600 W surges within 10/1000 µs, preventing false triggering and latch-up in optocoupler input stages. |
| Telecom DC Power Supply Protection | Motor Drive Gate Driver Protection |
Use Scenario: Safeguarding −48 V telecom rectifier output against lightning-induced surges on distribution lines. IC Role / Device Role / Timing Role: Reverse-biased TVS on negative rail, referenced to system ground. Use Value: Maintains <1.0 µA leakage at −48 V, ensuring minimal standby power loss while clamping to −126 V. |
Use Scenario: Protecting high-side gate driver supply (e.g., bootstrap capacitor node) from Miller-induced voltage spikes. IC Role / Device Role / Timing Role: Fast-response clamping diode between gate drive rail and source/ground. Use Value: Sub-nanosecond response time prevents gate oxide overstress during MOSFET switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ78AHM3_A/I | Halogen-free variant; identical electrical specs and AEC-Q101 qualification. | No difference in circuit behavior or reliability; selected only for halogen-free compliance mandates. | Choose SMBJ78AHM3_A/I if RoHS + halogen-free material declaration is required. |
| SMCJ78AHE3_A/I | Larger SMC (DO-214AB) package; same VWM, VBR, VC, but rated for 1500 W PPPM and 12.5 A IPPM. | Higher surge capacity suits mains-connected equipment or systems requiring extended IEC 61000-4-5 Level 5 immunity. | Choose SMCJ78AHE3_A/I when 600 W is insufficient and board space allows larger footprint. |
Compared with SMBJ78AHE3_A/I, SMBJ78AHM3_A/I offers identical protection performance with halogen-free construction, while SMCJ78AHE3_A/I provides 2.5× higher surge energy handling in a larger package - enabling trade-offs between board area, regulatory compliance, and surge severity requirements.
Availability
SMBJ78AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronics, industrial control systems, and telecom infrastructure requiring stable component supply, AEC-Q101 qualification, and consistent surge immunity performance across production batches.
Supply support for SMBJ78AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and power MOSFETs for high-reliability applications.
The SMBJ series was engineered for surface-mount transient suppression in space-constrained, high-surge environments - targeting automotive, industrial, and communications systems where AEC-Q101 compliance and repeatable clamping are mandatory.
FAQ
What is the maximum clamping voltage of SMBJ78AHE3_A/I at its rated peak pulse current?
The SMBJ78AHE3_A/I has a maximum clamping voltage (VC) of 126 V at its specified peak pulse current (IPPM) of 4.8 A under a 10/1000 µs waveform. This value is measured per JEDEC standards and defines the upper voltage limit imposed on protected circuits during surge events - critical for ensuring downstream ICs with 100 V absolute maximum ratings remain within safe operating limits. The SMBJ78AHE3_A/I maintains this clamping performance across its full operating temperature range.
Is SMBJ78AHE3_A/I qualified for automotive applications?
Yes, SMBJ78AHE3_A/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in the SMBJ5.0A–SMBJ188A datasheet (Rev. 09-Jan-2024). This qualification covers stress testing for temperature cycling, humidity bias, mechanical shock, and surge robustness - validating its use in engine control units, body electronics, and ADAS subsystems. The SMBJ78AHE3_A/I meets automotive-grade reliability requirements without derating for ambient temperatures up to +125 °C.
What does the "A/I" suffix in SMBJ78AHE3_A/I indicate?
The "A/I" suffix in SMBJ78AHE3_A/I denotes the packaging configuration: "A" specifies the base part revision, and "I" indicates 13-inch diameter plastic tape-and-reel packaging containing 3200 units. This format complies with EIA-481 standards and is optimized for high-volume automated SMT placement. The SMBJ78AHE3_A/I is not a functional variant - all electrical, thermal, and reliability characteristics match the base SMBJ78AHE3 specification.
How does SMBJ78AHE3_A/I differ from bidirectional TVS diodes like SMBJ78CA?
SMBJ78AHE3_A/I is unidirectional and functions only in reverse bias - conducting surge current from cathode to anode during overvoltage events on positive rails. In contrast, SMBJ78CA is bidirectional, providing symmetrical clamping for AC-coupled or floating signal lines. The SMBJ78AHE3_A/I exhibits lower leakage (<1.0 µA at 78 V) and higher forward surge rating (100 A IFSM), making it preferred for DC power rail protection, whereas SMBJ78CA suits differential data lines or transformer-coupled interfaces where polarity reversal occurs.
What is the thermal resistance junction-to-ambient for SMBJ78AHE3_A/I?
The SMBJ78AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on the minimum recommended copper pad layout (0.2″ × 0.2″ per terminal). This value assumes no additional heatsinking and governs power derating above 25 °C ambient - for example, at 85 °C ambient, the device's 5.0 W steady-state power dissipation must be reduced to ~2.0 W. The SMBJ78AHE3_A/I's RθJA is validated per JESD51-7 and used to calculate safe operating area boundaries in thermal design.
SMBJ78AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 78V
- Voltage - Breakdown (Min):
- 86.7V
- Voltage - Clamping (Max) @ Ipp:
- 126V
- Current - Peak Pulse (10/1000µs):
- 4.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ78AHE3_A/I FAQ
1.How can I place an order for SMBJ78AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ78AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ78AHE3_A/I reliable?
The price and inventory of SMBJ78AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ78AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ78AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ78AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ78AHE3_A/I?
SMBJ78AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ78AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ78AHE3_A/I?
For technical support, including SMBJ78AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ78AHE3_A/I requirements.
6.How does Aetrix verify that SMBJ78AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ78AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ78AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ78AHE3_A/I?
All SMBJ78AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ78AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ78AHE3_A/I part is unused and in its original packaging.
Return procedure for SMBJ78AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ78AHE3_A/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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