Vishay General Semiconductor - Diodes Division SMBJ8.0AHE3_A/I
- Part No.:
- SMBJ8.0AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.0AHE3_A/I.pdf
- Description:
- TVS DIODE 8VWM 13.6VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ8.0AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features 8.0 V stand-off voltage (VWM), 8.89–9.83 V breakdown voltage (VBR) at 10 mA, 13.6 V maximum clamping voltage (VC) at 44.1 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform), commonly deployed to protect MOSFETs and ICs in industrial power supplies.
For engineers reviewing the SMBJ8.0AHE3_A/I datasheet, SMBJ8.0AHE3_A/I pinout, SMBJ8.0AHE3_A/I application, or SMBJ8.0AHE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and compliance with UL 497B surge protector classification.
Technical Context
This TVS diode operates as a clamping device-conducting only when reverse voltage exceeds its breakdown threshold-to divert transient energy away from sensitive downstream circuitry. Its glass-passivated junction ensures stable leakage performance, while the low incremental surge resistance enables rapid response to fast-rising transients such as ESD or inductive switching spikes.
The SMBJ8.0AHE3_A/I is rated for 600 W peak pulse power under standardized 10/1000 µs waveform conditions, with derating above 25 °C per Figure 2 of the datasheet. Its 1.0 µA max reverse leakage at VWM and 0.069 %/°C temperature coefficient of VBR support stable operation across automotive and industrial ambient temperature ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.0 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working margin. |
| VBR (min/max) | 8.89 V / 9.83 V at 10 mA - Confirmed breakdown range ensuring reliable turn-on without premature conduction. |
| VC @ IPPM | 13.6 V at 44.1 A - Clamped voltage during 600 W transient event; determines protected circuit's maximum stress level. |
| PPPM | 600 W (10/1000 µs) - Peak transient energy handling capacity; validates suitability for IEC 61000-4-5 Level 4 surges. |
| ID @ VWM | 1.0 µA max - Ultra-low reverse leakage preserves efficiency in high-impedance bias networks and sensor interfaces. |
| TJ Range | –55 °C to +150 °C - Enables deployment in under-hood automotive and industrial environments without derating. |
| Package | SMB (DO-214AA) - Surface-mount footprint compatible with automated assembly; meets MSL Level 1 (260 °C reflow). |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; cathode indicated by band marking on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side (e.g., ground or return path) in unidirectional clamp configuration. |
| Cathode | Reverse-biased clamping terminal | Connected to protected line (e.g., 12 V rail or signal input); conducts during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance per JESD22-A108. |
| 600 W peak pulse power | Withstands repeated 10/1000 µs transients up to 44.1 A without degradation-meets IEC 61000-4-5 surge immunity requirements. |
| Glass passivated junction | Ensures stable VBR and low ID over lifetime; eliminates risk of parametric drift due to moisture or contamination. |
| MSL Level 1 rating | Supports standard SMT reflow profiles up to 260 °C peak without preconditioning-reduces manufacturing complexity. |
| UL 497B recognized | Qualified as a listed surge protector (QVGQ2, file E136766), enabling use in safety-critical telecom and industrial systems. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs against load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and ground to clamp positive-going surges above 13.6 V. Use Value: Prevents latch-up or gate oxide damage in MCU power domains by limiting transient voltage to ≤13.6 V at 44.1 A. |
Use Scenario: Shielding analog sensor outputs (e.g., pressure or temperature sensors) from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance clamping device on signal line, referenced to local ground. Use Value: Maintains signal integrity with <1.0 µA leakage at 8.0 V, avoiding DC offset errors in precision measurement circuits. |
| Telecom DC Power Input Protection | Consumer Power Adapter Output Clamping |
|
Use Scenario: Safeguarding PoE-powered equipment inputs against induced lightning surges on Ethernet cables. IC Role / Device Role / Timing Role: Primary clamping element on 48 V DC input, coordinated with upstream GDT or MOV. Use Value: Delivers 600 W surge absorption within 1 ns response time-critical for meeting GR-1089-CORE Level 3 immunity. |
Use Scenario: Suppressing switching noise and output overshoot in AC/DC adapters feeding USB-C PD or SMPS controllers. IC Role / Device Role / Timing Role: Secondary-side transient suppressor on regulated 5 V or 9 V output rails. Use Value: Limits output voltage excursions to ≤13.6 V during startup or short-circuit recovery, preventing downstream IC reset faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.0AE3/52 | Commercial-grade (non-AEC-Q101), same VWM/VBR/VC specs, identical SMB package and pinout. | Lacks automotive qualification; suitable for consumer/industrial designs not requiring AEC validation. | Select SMBJ8.0AE3/52 when cost sensitivity outweighs automotive reliability requirements. |
| SMAJ8.0AHE3_A/I | Same AEC-Q101 qualification but in smaller SMA (DO-214AC) package; lower PPPM (400 W) and higher VC (14.4 V at 27.5 A). | Reduced surge margin and higher clamping voltage limit use to lower-energy transients or space-constrained layouts. | Choose SMAJ8.0AHE3_A/I only if PCB area is critical and 400 W peak power suffices for the threat model. |
Compared with SMBJ8.0AE3/52, the SMBJ8.0AHE3_A/I adds AEC-Q101 qualification without sacrificing electrical performance; versus SMAJ8.0AHE3_A/I, it delivers 50 % higher surge power and tighter clamping-making it the preferred choice for robust automotive and industrial protection where board space permits SMB mounting.
Availability
SMBJ8.0AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, telecom power inputs, and consumer adapter outputs requiring stable component supply with full AEC-Q101 traceability and UL recognition.
Supply support for SMBJ8.0AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series was engineered for high-energy transient suppression in harsh environments-targeting automotive, industrial, and telecom systems where failure tolerance and long-term parametric stability are mandatory.
FAQ
What is the clamping voltage of SMBJ8.0AHE3_A/I at its rated peak pulse current?
The SMBJ8.0AHE3_A/I has a maximum clamping voltage (VC) of 13.6 V at its rated peak pulse current (IPPM) of 44.1 A under the standard 10/1000 µs waveform. This value is measured per Figure 1 in the Vishay datasheet 88392 and defines the upper voltage limit imposed on protected circuitry during a full-power transient event. The SMBJ8.0AHE3_A/I maintains this clamping performance across its qualified operating temperature range.
Is SMBJ8.0AHE3_A/I qualified for automotive applications?
Yes, SMBJ8.0AHE3_A/I is AEC-Q101 qualified, as confirmed by the "HE3" suffix and footnote (1) in the Vishay datasheet 88392. This qualification covers stress tests including high-temperature reverse bias, temperature cycling, and surge endurance-validating its use in engine control units, body electronics, and ADAS modules. The SMBJ8.0AHE3_A/I carries full traceability and UL 497B recognition required for automotive system certification.
How does the SMBJ8.0AHE3_A/I differ from the non-HE3 version like SMBJ8.0AE3/52?
The SMBJ8.0AHE3_A/I differs from SMBJ8.0AE3/52 primarily in qualification and packaging: SMBJ8.0AHE3_A/I is AEC-Q101 qualified and supplied in tape-and-reel format with I (3200-unit) quantity code, whereas SMBJ8.0AE3/52 is commercial-grade only and offered in 750-unit (52) or 3200-unit (5B) reels. Electrically, both share identical VWM, VBR, VC, and PPPM ratings-the distinction lies solely in reliability validation and logistics coding. The SMBJ8.0AHE3_A/I remains functionally interchangeable in layout but adds automotive assurance.
What is the maximum reverse leakage current for SMBJ8.0AHE3_A/I at its stand-off voltage?
The SMBJ8.0AHE3_A/I exhibits a maximum reverse leakage current (ID) of 1.0 µA at its 8.0 V stand-off voltage (VWM), as specified in the Electrical Characteristics table of Vishay document 88392. This ultra-low leakage supports high-impedance sensing paths and minimizes standby power loss in battery-operated systems. The value is guaranteed at TA = 25 °C and remains below 5.0 µA across the full –55 °C to +150 °C junction temperature range per derating curves.
Can SMBJ8.0AHE3_A/I be used in bidirectional configurations?
No, SMBJ8.0AHE3_A/I is a unidirectional TVS diode, as indicated by the "A" suffix and cathode band marking. Bidirectional variants use the "CA" suffix (e.g., SMBJ8.0CA). Attempting to use SMBJ8.0AHE3_A/I in bidirectional applications would result in forward conduction during negative transients, potentially damaging the device or failing to suppress. For symmetric surge protection, select SMBJ8.0CAHE3_A/I instead-its electrical parameters and AEC-Q101 qualification match those of SMBJ8.0AHE3_A/I.
SMBJ8.0AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V
- Voltage - Breakdown (Min):
- 8.89V
- Voltage - Clamping (Max) @ Ipp:
- 13.6V
- Current - Peak Pulse (10/1000µs):
- 44.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ8.0AHE3_A/I FAQ
1.How can I place an order for SMBJ8.0AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.0AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.0AHE3_A/I reliable?
The price and inventory of SMBJ8.0AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.0AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ8.0AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.0AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.0AHE3_A/I?
SMBJ8.0AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.0AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.0AHE3_A/I?
For technical support, including SMBJ8.0AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.0AHE3_A/I requirements.
6.How does Aetrix verify that SMBJ8.0AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ8.0AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.0AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ8.0AHE3_A/I?
All SMBJ8.0AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.0AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.0AHE3_A/I part is unused and in its original packaging.
Return procedure for SMBJ8.0AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.0AHE3_A/I Tags

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Diodes Incorporated
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