Vishay General Semiconductor - Diodes Division SMBJ8.0AHE3_B/I
- Part No.:
- SMBJ8.0AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.0AHE3_B/I.pdf
- Description:
- 600W,8.0V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ8.0AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping ESD and surge transients on power and signal lines. It features 8.0 V stand-off voltage (VWM), 8.89–9.83 V breakdown voltage (VBR) at 10 mA, 13.6 V maximum clamping voltage (VC) at 44.1 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies and automotive ECUs.
For engineers reviewing the SMBJ8.0AHE3_B/I datasheet, SMBJ8.0AHE3_B/I pinout, SMBJ8.0AHE3_B/I application, or SMBJ8.0AHE3_B/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and compliance with UL 497B for surge protector classification.
Technical Context
This TVS diode operates as a voltage-clamping device triggered by overvoltage events exceeding its reverse stand-off voltage of 8.0 V. Its silicon avalanche junction provides sub-nanosecond response time and low dynamic impedance during transient suppression, enabling effective protection of downstream components against IEC 61000-4-2 ESD (±30 kV contact) and IEC 61000-4-5 surge (up to 4 kV line-to-line).
The SMBJ8.0AHE3_B/I is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), exhibits 0.069 %/°C temperature coefficient of VBR, and maintains stable clamping performance across –55 °C to +150 °C operating junction temperature - validated under J-STD-020 MSL Level 1 reflow conditions (peak 260 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.0 V - Maximum continuous reverse working voltage before clamping begins; defines safe operating margin below breakdown. |
| VBR @ IT = 10 mA | 8.89–9.83 V - Verified breakdown threshold ensuring predictable turn-on during transients. |
| VC @ IPPM = 44.1 A | 13.6 V - Clamped voltage seen by protected circuit during 600 W surge; limits stress on downstream ICs. |
| PPPM | 600 W - Peak pulse power handling with 10/1000 µs waveform; supports repetitive surge duty cycle ≤ 0.01 %. |
| IPPM | 44.1 A - Maximum non-repetitive surge current capability under standardized test waveform. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; informs PCB thermal design. |
| TJ max. | +150 °C - Maximum allowable junction temperature; enables operation in under-hood automotive environments. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when VREV > VBR. |
| Anode (unbanded end) | Reference node / ground return | Typically tied to system ground or low-impedance return path to complete clamping loop. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance - suitable for engine control and ADAS modules. |
| 600 W peak pulse power | Withstands high-energy transients per ISO 7637-2 Pulse 1/2a/3a and IEC 61000-4-5 Level 4 without degradation. |
| Low clamping ratio (VC/VWM ≈ 1.7) | Minimizes overvoltage stress on protected ICs - critical for 3.3 V and 5 V logic interfaces. |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without baking; compatible with automated placement and high-volume manufacturing. |
| UL 497B recognized (QVGQ2) | Meets safety requirements for telecom and industrial surge protection systems requiring certified component approval. |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V supply rails in body control modules against load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and DC-DC input to clamp transients up to 600 W. Use Value: Limits voltage excursion to ≤13.6 V during 44.1 A surges, preventing latch-up or damage to LDOs and microcontrollers. |
Use Scenario: Shielding analog output lines of pressure sensors in factory automation PLCs from EFT and ESD coupling. IC Role / Device Role / Timing Role: TVS mounted at connector entry point to shunt fast transients before reaching op-amp signal conditioning stage. Use Value: Sub-ns response ensures clamping occurs before sensitive amplifier inputs exceed absolute maximum ratings. |
| Telecom DC Power Input Protection | Consumer USB Power Delivery Clamp |
|
Use Scenario: Safeguarding PoE-powered network switches against lightning-induced surges on 48 V DC input. IC Role / Device Role / Timing Role: Primary clamping device on input bulk capacitor rail, coordinated with upstream GDT or MOV. Use Value: 13.6 V clamping voltage prevents overvoltage propagation to secondary-side DC-DC converters and PHY ICs. |
Use Scenario: Adding secondary-level surge immunity to USB-C PD ports in portable monitors and docking stations. IC Role / Device Role / Timing Role: Unidirectional TVS on VBUS line downstream of E-Marker IC to absorb hot-plug transients. Use Value: Low leakage (<1 µA at 8.0 V) avoids PD negotiation errors while providing 600 W surge headroom. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.0A-E3/52 | Commercial-grade (non-AEC-Q101), same electrical specs and SMB package. | Lacks automotive qualification; not recommended for under-hood or safety-critical ECUs. | Select when cost-sensitive industrial or consumer designs do not require automotive reliability validation. |
| SMCJ8.0AHE3_A/H | Same AEC-Q101 qualification but in larger SMC (DO-214AB) package with higher 1500 W PPPM. | Higher surge capacity suits 24 V truck systems; requires larger PCB footprint and different pad layout. | Choose for higher-energy threat environments where 600 W is insufficient and board space allows SMC footprint. |
Compared with SMBJ8.0AHE3_B/I, the SMBJ8.0A-E3/52 offers identical clamping performance at lower cost but no automotive qualification, while the SMCJ8.0AHE3_A/H delivers 2.5× higher surge power in a physically larger package - making SMBJ8.0AHE3_B/I optimal for space-constrained AEC-Q101-compliant 12 V systems.
Availability
SMBJ8.0AHE3_B/I is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor nodes, and telecom power input stages requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SMBJ8.0AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is part of Vishay's TRANSZORB® TVS platform engineered for robust transient suppression in automotive, industrial, and communications infrastructure - balancing high surge capability with compact SMB packaging and AEC-Q101 compliance.
FAQ
What is the clamping voltage of SMBJ8.0AHE3_B/I at its rated peak pulse current?
The SMBJ8.0AHE3_B/I has a maximum clamping voltage (VC) of 13.6 V when subjected to its rated peak pulse current of 44.1 A using the 10/1000 µs waveform. This value is measured under standardized test conditions per IEC 61000-4-5 and ensures predictable overvoltage limiting for protected circuits. The SMBJ8.0AHE3_B/I maintains this clamping performance across its full operating temperature range.
Is SMBJ8.0AHE3_B/I qualified for automotive applications?
Yes, SMBJ8.0AHE3_B/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet 88392. This qualification covers stress tests including temperature cycling, high-temperature reverse bias, and surge endurance - validating its suitability for engine control units, body electronics, and ADAS subsystems. The SMBJ8.0AHE3_B/I meets MSL Level 1 for lead-free reflow compatibility.
What is the difference between SMBJ8.0AHE3_B/I and SMBJ8.0A-E3/52?
The SMBJ8.0AHE3_B/I is AEC-Q101 qualified and supplied in 13-inch tape-and-reel (3200 pcs), while SMBJ8.0A-E3/52 is commercial-grade (non-automotive) and packaged in 7-inch tape-and-reel (750 pcs). Both share identical electrical characteristics - VWM = 8.0 V, VBR = 8.89–9.83 V, VC = 13.6 V - but only SMBJ8.0AHE3_B/I carries automotive reliability validation required for Tier 1 supplier BOMs.
Can SMBJ8.0AHE3_B/I be used in bidirectional configurations?
No, SMBJ8.0AHE3_B/I is a unidirectional TVS diode, as indicated by the "A" suffix and cathode band marking. For bidirectional operation, Vishay specifies the "CA" suffix (e.g., SMBJ8.0CA). Using SMBJ8.0AHE3_B/I in reverse-biased configurations risks permanent damage due to lack of symmetrical avalanche structure - always verify polarity alignment during PCB layout.
What is the thermal resistance of SMBJ8.0AHE3_B/I, and how does it affect PCB layout?
The SMBJ8.0AHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain safe junction temperatures under repeated surge events, PCB layout must provide adequate copper area and avoid thermal bottlenecks. Reducing pad size or omitting thermal vias increases RθJA, potentially derating surge capability - refer to Figure 2 in datasheet 88392 for derating curves.
SMBJ8.0AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V
- Voltage - Breakdown (Min):
- 8.89V
- Voltage - Clamping (Max) @ Ipp:
- 13.6V
- Current - Peak Pulse (10/1000µs):
- 44.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ8.0AHE3_B/I FAQ
1.How can I place an order for SMBJ8.0AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.0AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.0AHE3_B/I reliable?
The price and inventory of SMBJ8.0AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.0AHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ8.0AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.0AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.0AHE3_B/I?
SMBJ8.0AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.0AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.0AHE3_B/I?
For technical support, including SMBJ8.0AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.0AHE3_B/I requirements.
6.How does Aetrix verify that SMBJ8.0AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ8.0AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.0AHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ8.0AHE3_B/I?
All SMBJ8.0AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.0AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.0AHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ8.0AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.0AHE3_B/I Tags

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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