Vishay General Semiconductor - Diodes Division SMBJ8.0AHM3_A/I
- Part No.:
- SMBJ8.0AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.0AHM3_A/I.pdf
- Description:
- TVS DIODE 8VWM 13.6VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ8.0AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 8.0 V stand-off voltage (VWM), 8.89–9.83 V breakdown voltage (VBR) at 10 mA, 13.6 V maximum clamping voltage (VC) at 44.1 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive sensor interfaces and industrial I/O protection.
For engineers reviewing the SMBJ8.0AHM3_A/I datasheet, SMBJ8.0AHM3_A/I pinout, SMBJ8.0AHM3_A/I application, or SMBJ8.0AHM3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, halogen-free RoHS compliance (HM3 suffix), thermal resistance (RθJA = 100 °C/W), and clamping performance under repetitive 0.01% duty cycle surges.
Technical Context
This TVS diode operates as a voltage-clamping protection device in series with sensitive downstream circuitry, conducting only when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance and low leakage (<1.0 µA at VWM), while the low incremental surge resistance enables rapid energy diversion during transients.
The SMBJ8.0AHM3_A/I is rated for -55 °C to +150 °C operating junction temperature and meets J-STD-020 MSL Level 1 (peak reflow 260 °C). Its 100 A IFSM rating supports robust handling of 8.3 ms half-sine surge events, and its 5.0 W steady-state power dissipation allows continuous operation under moderate leakage conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.0 V - maximum continuous reverse operating voltage before clamping begins; sets upper limit for normal circuit operation. |
| VBR min/max | 8.89 V / 9.83 V at IT = 10 mA - defines guaranteed breakdown window; ensures reliable triggering across process variation and temperature. |
| VC @ IPPM | 13.6 V at 44.1 A - clamped voltage seen by protected IC during worst-case 10/1000 µs surge; determines residual stress on downstream components. |
| PPPM | 600 W - peak transient power it can absorb without failure; validated per IEC 61000-4-5 and ISO 7637-2 waveforms. |
| ID @ VWM | ≤1.0 µA - reverse leakage at rated stand-off; critical for low-power sensor and battery-backed circuits to avoid parasitic drain. |
| TJ max | +150 °C - maximum junction temperature; enables use in under-hood automotive and high-ambient industrial environments. |
| RθJA | 100 °C/W - thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads; informs PCB layout requirements for sustained power handling. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, matte tin-plated leads. Cathode indicated by band marking on cathode end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to ground or lower-potential rail in unidirectional configuration; carries surge current to reference plane during clamping. |
| Cathode | Reverse-biased clamping terminal | Connected to protected line (e.g., CAN_H, USB_VBUS); initiates avalanche conduction when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control modules and ADAS sensor interfaces per stress test requirements. |
| 600 W peak pulse power | Withstands IEC 61000-4-5 Level 4 (4 kV) surges on 50 Ω source impedance without degradation. |
| Low clamping ratio (VC/VBR ≈ 1.38) | Minimizes overvoltage exposure to protected ICs - critical for 3.3 V and 5 V logic interfaces. |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without baking; compatible with high-volume automated assembly. |
| Halogen-free (HM3 suffix) | Meets IPC-4101D/21G and JEDEC J-STD-020 environmental compliance for green electronics manufacturing. |
Applications
| Automotive Sensor Interface | Industrial PLC Digital Input |
|---|---|
Use Scenario: Protecting LIN bus transceivers and temperature sensors in engine bay modules exposed to load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional clamping device placed between sensor signal line and ground, triggered within <1 ps to limit voltage excursion. Use Value: Prevents latch-up or gate oxide damage in 5 V tolerant analog front-ends during 100 V/50 ms load dump events. |
Use Scenario: Safeguarding 24 V digital input channels on programmable logic controllers against field-wiring induced surges. IC Role / Device Role / Timing Role: Primary overvoltage clamp on input optocoupler anode side, absorbing energy before current-limiting resistor. Use Value: Enables >100,000 surge cycles without parameter shift, maintaining input threshold integrity across 10-year service life. |
| USB Power Delivery Line | Motor Drive Gate Driver Supply |
Use Scenario: Secondary protection on VBUS line upstream of USB PD controller ICs in portable docking stations. IC Role / Device Role / Timing Role: Fast-response shunt element that clamps ESD (IEC 61000-4-2 ±15 kV contact) before internal FETs turn on. Use Value: Limits VBUS overshoot to ≤13.6 V during 30 A transient, preserving USB PD negotiation integrity and preventing brownout resets. |
Use Scenario: Suppressing Miller-induced spikes on high-side gate driver supply rails in BLDC motor inverters. IC Role / Device Role / Timing Role: Low-inductance clamp across 15 V gate bias rail, diverting nanosecond-scale switching transients away from driver IC. Use Value: Reduces gate oscillation amplitude by >60%, eliminating false turn-on and improving MOSFET reliability at 20 kHz PWM frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.0AHE3_A/I | Same electrical specs, but RoHS-compliant commercial grade (E3) - not halogen-free or AEC-Q101 qualified. | Lacks automotive qualification and halogen-free certification; suitable for consumer or industrial non-automotive use. | Select when AEC-Q101 and halogen-free requirements are not mandated, and cost optimization is prioritized. |
| SMAJ8.0A-M3 | Lower PPPM (400 W), larger VBR tolerance (8.89–10.5 V), SMA package (DO-214AC) - smaller footprint but higher RθJA (140 °C/W). | Reduced surge margin and thermal derating; limited to lower-energy transients or well-cooled layouts. | Choose only if board space is constrained and surge threat level is ≤Level 3 per IEC 61000-4-5. |
Compared with SMBJ8.0AHM3_A/I, the HE3 variant trades automotive qualification for lower cost, while the SMAJ8.0A-M3 sacrifices surge robustness and thermal performance for compactness - making SMBJ8.0AHM3_A/I the optimal choice where AEC-Q101 compliance, 600 W capability, and thermal stability are mandatory.
Availability
SMBJ8.0AHM3_A/I is available at Aetrix Electronics and suitable for automotive sensor protection, industrial PLC input conditioning, and USB PD line safeguarding requiring stable component supply across multi-year production programs.
Supply support for SMBJ8.0AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability and automotive-grade validation.
The SMBJ series is engineered for high-energy transient suppression in harsh environments, targeting automotive, industrial, and telecom infrastructure where AEC-Q101 compliance and repeatable clamping performance are essential.
FAQ
What is the clamping voltage of SMBJ8.0AHM3_A/I at its rated peak pulse current?
The SMBJ8.0AHM3_A/I has a maximum clamping voltage (VC) of 13.6 V at 44.1 A peak pulse current (IPPM) under 10/1000 µs waveform conditions. This value is measured per ANSI/IEEE C62.35 and guarantees the voltage imposed on protected circuitry will not exceed 13.6 V during standardized surge events - a critical parameter for ensuring compatibility with 5 V logic interfaces and preventing overstress of downstream ICs.
Is SMBJ8.0AHM3_A/I qualified for automotive applications?
Yes, SMBJ8.0AHM3_A/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HM3" and documentation in datasheet 88392 (Revision 09-Jan-2024). This qualification covers stress tests including HTGB, HTRB, TCT, and mechanical shock, validating its suitability for under-hood and chassis-mounted automotive systems such as body control modules and ADAS sensor nodes.
What does the "HM3" suffix indicate in SMBJ8.0AHM3_A/I?
The "HM3" suffix in SMBJ8.0AHM3_A/I denotes halogen-free, RoHS-compliant, commercial-grade construction meeting JESD201 Class 2 whisker resistance. It distinguishes this variant from E3 (RoHS only) and HM3_X (AEC-Q101 + halogen-free) versions - confirming both environmental compliance and suitability for lead-free reflow without compromising surge performance or long-term reliability.
How does SMBJ8.0AHM3_A/I differ from SMBJ8.0A-E3/52?
SMBJ8.0AHM3_A/I differs from SMBJ8.0A-E3/52 in three key aspects: (1) HM3 indicates halogen-free material formulation versus E3's standard RoHS compliance; (2) the "_A/I" suffix specifies 13″ tape-and-reel packaging (3200 units) with humidity indicator; and (3) HM3 variants are explicitly listed as AEC-Q101 qualified in Vishay's ordering matrix, whereas E3 parts are commercial-grade only - making SMBJ8.0AHM3_A/I appropriate for automotive production where both environmental and qualification requirements apply.
What is the maximum reverse leakage current for SMBJ8.0AHM3_A/I at 8.0 V?
The maximum reverse leakage current (ID) for SMBJ8.0AHM3_A/I at its 8.0 V stand-off voltage (VWM) is 1.0 µA at TA = 25 °C, per Electrical Characteristics table in datasheet 88392. This low leakage ensures minimal impact on battery-powered or high-impedance sensor circuits, supporting designs where standby current budgets are tight - such as automotive door module wake-up inputs or IoT node analog front-ends.
SMBJ8.0AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V
- Voltage - Breakdown (Min):
- 8.89V
- Voltage - Clamping (Max) @ Ipp:
- 13.6V
- Current - Peak Pulse (10/1000µs):
- 44.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ8.0AHM3_A/I FAQ
1.How can I place an order for SMBJ8.0AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.0AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.0AHM3_A/I reliable?
The price and inventory of SMBJ8.0AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.0AHM3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ8.0AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.0AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.0AHM3_A/I?
SMBJ8.0AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.0AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.0AHM3_A/I?
For technical support, including SMBJ8.0AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.0AHM3_A/I requirements.
6.How does Aetrix verify that SMBJ8.0AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ8.0AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.0AHM3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ8.0AHM3_A/I?
All SMBJ8.0AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.0AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.0AHM3_A/I part is unused and in its original packaging.
Return procedure for SMBJ8.0AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.0AHM3_A/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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