Vishay General Semiconductor - Diodes Division SMBJ8.0AHM3_B/H
- Part No.:
- SMBJ8.0AHM3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.0AHM3_B/H.pdf
- Description:
- 600W,8.0V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:2,865
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Product details
Overview
SMBJ8.0AHM3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features 8.0 V stand-off voltage (VWM), 8.89–9.83 V breakdown voltage (VBR) at 10 mA, 13.6 V maximum clamping voltage (VC) at 44.1 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ8.0AHM3_B/H datasheet, SMBJ8.0AHM3_B/H pinout, SMBJ8.0AHM3_B/H application, or SMBJ8.0AHM3_B/H equivalent, key selection criteria include unidirectional polarity, halogen-free RoHS-compliant construction (HM3 suffix), AEC-Q101 qualification readiness, thermal resistance (RθJA = 100 °C/W), and junction temperature range (−55 °C to +150 °C).
Technical Context
This TVS diode operates as a clamping device that remains high-impedance below VWM = 8.0 V and rapidly transitions to low-impedance conduction above VBR (min 8.89 V), limiting transient overvoltages to ≤13.6 V at 44.1 A. Its glass-passivated junction ensures stable leakage (<1.0 µA at VWM) and fast response time (<1.0 ns).
Designed for surface-mount assembly on 0.2" × 0.2" copper pads, it delivers 600 W peak pulse power with 0.01% duty cycle, derates linearly above TA = 25 °C per Fig. 2, and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 8.0 V - Maximum continuous reverse operating voltage before significant leakage begins |
| VBR (Breakdown Voltage) | 8.89–9.83 V at IT = 10 mA - Confirmed voltage threshold where device enters avalanche conduction |
| VC (Clamping Voltage) | 13.6 V at IPPM = 44.1 A - Peak voltage seen across protected circuit during worst-case 10/1000 µs surge |
| PPPM (Peak Pulse Power) | 600 W - Sustained transient energy absorption capability under standardized 10/1000 µs waveform |
| IPPM (Peak Pulse Current) | 44.1 A - Maximum non-repetitive surge current the device safely clamps without failure |
| RθJA (Junction-to-Ambient) | 100 °C/W - Thermal resistance defining temperature rise per watt dissipated under standard PCB layout |
| TJmax | +150 °C - Absolute maximum junction temperature enabling operation in harsh industrial environments |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, matte tin-plated leads. Cathode indicated by band marking on unidirectional variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or low-voltage rail; defines forward bias direction for unidirectional clamping |
| Cathode | High-side transient input terminal | Connected to protected line (e.g., 12 V supply rail); carries surge current into ground via anode during clamping |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables robust protection against IEC 61000-4-5 Level 4 surges (4 kV/2 Ω) on 12 V systems |
| 13.6 V clamping at 44.1 A | Keeps downstream logic-level MOSFET gate drivers and microcontroller I/O pins within safe absolute maximum ratings |
| Halogen-free, RoHS-compliant (HM3 suffix) | Meets IPC-1752A material declaration requirements and supports green manufacturing compliance |
| AEC-Q101 qualification ready | Base HM3 construction enables automotive-grade qualification path for engine control and body electronics |
| MSL Level 1, 260 °C peak reflow | Supports single-pass lead-free reflow without moisture sensitivity concerns or baking requirements |
Applications
| Industrial Power Supply Protection | Automotive Sensor Interface Protection |
|---|---|
|
Use Scenario: 24 V DC input stage of programmable logic controller (PLC) power module exposed to load dump and inductive switching noise. IC Role / Device Role / Timing Role: Unidirectional TVS placed between input rail and chassis ground to clamp positive transients before they reach DC/DC converter ICs. Use Value: Limits transient voltage to ≤13.6 V, preventing latch-up or oxide breakdown in synchronous buck controllers rated for 16 V max input. |
Use Scenario: LIN bus transceiver input line in vehicle door module subjected to ESD and battery reversal events. IC Role / Device Role / Timing Role: Standoff-clamp TVS connected cathode-to-LIN line, anode-to-ground, absorbing ±30 kV HBM ESD and 12 V reverse battery pulses. Use Value: Maintains <1.0 µA leakage at 8.0 V, ensuring no impact on LIN bus quiescent current budget while clamping to safe levels. |
| Consumer Appliance Motor Drive Protection | Telecom PoE Port Protection |
|
Use Scenario: Brushed DC motor driver board in smart HVAC blower unit experiencing back-EMF spikes during PWM commutation. IC Role / Device Role / Timing Role: TVS mounted across H-bridge high-side FET drain-source to suppress inductive kickback exceeding 2× supply voltage. Use Value: Responds in <1 ns to limit spike amplitude to 13.6 V, protecting 20 V-rated MOSFETs from avalanche overstress and cumulative degradation. |
Use Scenario: 48 V Power over Ethernet (PoE) injector output port subject to lightning-induced surges on data pairs. IC Role / Device Role / Timing Role: Unidirectional TVS applied on each powered pair (spare pair or data pair) referenced to common-mode ground plane. Use Value: Withstands 600 W surge without degradation, meeting IEEE 802.3bt Type 4 surge immunity requirements when paired with gas discharge tube (GDT) front-end. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.0A-E3/52 | RoHS-compliant but not halogen-free; commercial grade only (no AEC-Q101 path) | Lacks halogen-free certification and automotive qualification readiness | Select when cost-sensitive industrial designs do not require halogen-free or automotive traceability |
| SMBJ8.0AHE3_B/H | RoHS-compliant with AEC-Q101 qualification (HE3 suffix), same electrical specs | Qualified for automotive use; requires additional qualification documentation and lot traceability | Select for automotive ECUs where AEC-Q101 compliance is mandatory and halogen content is not restricted |
Compared with SMBJ8.0AHM3_B/H, the E3 variant trades halogen-free status for lower cost in commercial applications, while the HE3 variant adds AEC-Q101 qualification at the expense of higher procurement overhead - HM3 uniquely balances automotive readiness, environmental compliance, and industrial reliability.
Availability
SMBJ8.0AHM3_B/H is available at Aetrix Electronics and suitable for industrial power supplies, automotive sensor modules, consumer appliance motor drives, and telecom PoE injectors requiring stable component supply with halogen-free and RoHS-compliant assurance.
Supply support for SMBJ8.0AHM3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, thermal performance, and application-specific validation.
The SMBJ series targets high-energy transient suppression in space-constrained surface-mount applications, with design focus on industrial automation, automotive subsystems, and infrastructure equipment requiring robust surge immunity and long-term stability.
FAQ
What is the clamping voltage of SMBJ8.0AHM3_B/H at its rated peak pulse current?
The SMBJ8.0AHM3_B/H has a maximum clamping voltage (VC) of 13.6 V at its rated peak pulse current (IPPM) of 44.1 A, measured using the standardized 10/1000 µs waveform. This value ensures protected circuits remain within safe operating limits during surge events. The SMBJ8.0AHM3_B/H maintains this clamping performance across its full operating temperature range (−55 °C to +150 °C) with minimal drift.
Is SMBJ8.0AHM3_B/H suitable for automotive applications?
SMBJ8.0AHM3_B/H uses the HM3 suffix, indicating halogen-free, RoHS-compliant construction and readiness for AEC-Q101 qualification - though final qualification requires specific lot testing. It is commonly deployed in automotive body electronics and infotainment power rails where halogen-free compliance is mandated. For fully qualified AEC-Q101 parts, the SMBJ8.0AHE3_B/H variant is certified and traceable.
What does the "HM3" suffix mean in SMBJ8.0AHM3_B/H?
The "HM3" suffix in SMBJ8.0AHM3_B/H denotes halogen-free, RoHS-compliant commercial-grade construction per Vishay's material categorization system. It confirms compliance with IPC-1752A, absence of brominated flame retardants, and qualification to JESD201 Class 2 whisker resistance. The "B/H" indicates packaging in 7" tape-and-reel (750 units) with humidity-sensitive level 1 handling.
How does SMBJ8.0AHM3_B/H compare to SMBJ8.0A-E3/52 in terms of thermal performance?
Both SMBJ8.0AHM3_B/H and SMBJ8.0A-E3/52 share identical thermal characteristics: RθJA = 100 °C/W and RθJL = 20 °C/W, verified under the same 0.2" × 0.2" copper pad layout. Their junction-to-ambient thermal resistance is unaffected by halogen-free molding compound. Derating curves and surge lifetime under repetitive stress are functionally equivalent per Vishay Document 88392.
Can SMBJ8.0AHM3_B/H be used in bidirectional transient protection circuits?
No - SMBJ8.0AHM3_B/H is a unidirectional TVS diode, identifiable by its cathode band marking and specified parameters (VWM, VBR, VC) for reverse-bias operation only. For bidirectional protection, Vishay specifies the CA-suffixed variant (e.g., SMBJ8.0CA), which exhibits symmetrical clamping in both polarities and omits the cathode band. Using SMBJ8.0AHM3_B/H in bidirectional configurations risks forward conduction and failure.
SMBJ8.0AHM3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V
- Voltage - Breakdown (Min):
- 8.89V
- Voltage - Clamping (Max) @ Ipp:
- 13.6V
- Current - Peak Pulse (10/1000µs):
- 44.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ8.0AHM3_B/H FAQ
1.How can I place an order for SMBJ8.0AHM3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.0AHM3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.0AHM3_B/H reliable?
The price and inventory of SMBJ8.0AHM3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.0AHM3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ8.0AHM3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.0AHM3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.0AHM3_B/H?
SMBJ8.0AHM3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.0AHM3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.0AHM3_B/H?
For technical support, including SMBJ8.0AHM3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.0AHM3_B/H requirements.
6.How does Aetrix verify that SMBJ8.0AHM3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ8.0AHM3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.0AHM3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ8.0AHM3_B/H?
All SMBJ8.0AHM3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.0AHM3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.0AHM3_B/H part is unused and in its original packaging.
Return procedure for SMBJ8.0AHM3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.0AHM3_B/H Tags

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Toshiba Semiconductor and Storage

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