My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ8.0A-M3/5B
;;2.jpg)
- Part No.:
- SMBJ8.0A-M3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.0A-M3/5B.pdf
- Description:
- TVS DIODE 8VWM 13.6VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:7,401
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ8.0A-M3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for primary overvoltage protection of DC power rails and signal lines. It features a 8.0 V stand-off voltage (VWM), 8.89–9.83 V breakdown voltage (VBR) at 1.0 mA, 13.6 V maximum clamping voltage (VC) at 44.1 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used in industrial sensor interfaces and automotive body control modules.
For engineers reviewing the SMBJ8.0A-M3/5B datasheet, SMBJ8.0A-M3/5B pinout, SMBJ8.0A-M3/5B application, or SMBJ8.0A-M3/5B equivalent, key selection criteria include clamping performance under 44.1 A surge, thermal resistance (RθJA = 100 °C/W), unidirectional polarity marking, SMB (DO-214AA) package compatibility, and halogen-free RoHS compliance per M3 suffix.
Technical Context
The SMBJ8.0A-M3/5B operates as a silicon avalanche diode that enters controlled breakdown above its 8.0 V stand-off threshold to shunt transient energy away from protected circuitry. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low leakage (<1.0 µA at VWM), while the 10/1000 µs surge rating reflects standardized lightning and switching transient immunity testing per ANSI/IEEE C62.35.
Designed for PCB-level protection, it delivers 13.6 V clamping at 44.1 A peak pulse current with <1 ps response time and meets MSL Level 1 per J-STD-020 (260 °C reflow peak). The cathode band marking on the SMB package enables unambiguous polarity orientation during automated placement.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.0 V - Maximum continuous reverse operating voltage before conduction begins; sets upper limit for normal circuit operation. |
| VBR (min/max) | 8.89 V / 9.83 V at 1.0 mA - Confirmed breakdown range defining reliable turn-on threshold under ESD/lightning transients. |
| VC @ IPPM | 13.6 V at 44.1 A - Clamped voltage during 600 W surge; determines maximum stress imposed on downstream ICs. |
| PPPM | 600 W - Peak pulse power handling with 10/1000 µs waveform; validates robustness against IEC 61000-4-5 Level 4 surges. |
| IPPM | 44.1 A - Peak pulse current capability; defines maximum transient energy the device can safely divert. |
| TJ max. | +150 °C - Maximum junction temperature; supports operation in under-hood automotive and industrial ambient environments. |
| RθJA | 100 °C/W - Thermal resistance junction-to-ambient on standard 0.2" × 0.2" copper pads; informs derating above 25 °C ambient. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant (M3 suffix), matte tin-plated leads solderable per J-STD-002. Cathode indicated by molded band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes conduction path during reverse-biased transient suppression. |
| Cathode | High-side transient input terminal | Connected to protected line (e.g., 12 V rail or sensor output); carries full surge current into anode during clamping. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power | Validated for IEC 61000-4-5 4th edition surge immunity up to 4 kV (line-earth) without degradation. |
| 13.6 V clamping at 44.1 A | Ensures protected 3.3 V/5 V logic interfaces remain below absolute maximum ratings during worst-case transients. |
| MSL Level 1 moisture sensitivity | Enables direct use in high-volume SMT assembly without baking; compatible with standard 260 °C lead-free reflow profiles. |
| Halogen-free & RoHS-compliant (M3) | Fulfills EU Directive 2011/65/EU and IPC-1752A material declaration requirements for green electronics manufacturing. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients (<1 ns rise time), improving protection margin for high-speed interfaces. |
Applications
| Automotive Body Control Module (BCM) | Industrial RS-485 Sensor Interface |
|---|---|
|
Use Scenario: Protects microcontroller I/O pins and LIN bus transceivers from load-dump and inductive switching spikes in 12 V vehicle subsystems. IC Role / Device Role / Timing Role: Unidirectional TVS placed between LIN data line and chassis ground to clamp negative transients and absorb positive surges. Use Value: Limits voltage excursion to ≤13.6 V during 44.1 A pulses, preventing latch-up or gate oxide damage in 5 V tolerant transceivers. |
Use Scenario: Shields RS-485 transceiver inputs from EFT bursts and surge events in factory-floor PLC communication networks. IC Role / Device Role / Timing Role: Standoff-rated TVS connected across differential pair (A/B) and ground to suppress common-mode transients. Use Value: Maintains signal integrity by clamping transients within 100 ps, avoiding false edge detection or receiver saturation during 2 kV EFT testing. |
| Consumer Appliance Power Supply Input | Telecom PoE-PD Surge Protection |
|
Use Scenario: Guards AC-DC adapter secondary-side 5 V/12 V outputs against conducted surges entering via mains or interconnect cables. IC Role / Device Role / Timing Role: Primary-stage TVS mounted directly at DC output connector to intercept incoming transients before LDOs or DC-DC controllers. Use Value: Absorbs 600 W pulses without failure, enabling compliance with UL 62368-1 Annex D surge withstand requirements. |
Use Scenario: Protects Power over Ethernet (PoE) powered devices (PDs) from induced surges on twisted-pair data/power lines. IC Role / Device Role / Timing Role: Unidirectional TVS applied to each of the four PoE pairs (spare and data pairs) referenced to local ground plane. Use Value: Withstands repeated 10/1000 µs surges up to 44.1 A while maintaining <1.0 µA leakage at 8.0 V, preserving PD classification accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.0A-E3/5B | Same electrical specs; RoHS-compliant but not halogen-free (E3 vs. M3). | Acceptable where halogen-free requirement is not mandated (e.g., non-EU commercial products). | Select E3 for cost-sensitive, non-automotive commercial designs with standard RoHS compliance only. |
| SMAJ8.0A-M3 | Lower 400 W PPPM, 15.0 V VC @ 27.0 A; SMA (DO-214AC) package - smaller footprint, lower thermal mass. | Not suitable for 600 W surge environments; limited to lower-energy transients (e.g., ESD-only zones). | Choose SMAJ8.0A-M3 only when board space is constrained and surge threat level is ≤400 W (e.g., handheld USB ports). |
Compared with SMBJ8.0A-E3/5B, the SMBJ8.0A-M3/5B adds halogen-free compliance for stricter environmental programs; versus SMAJ8.0A-M3, it provides 50% higher surge power handling and 1.4 V lower clamping - critical for protecting sensitive 3.3 V logic in industrial fieldbus nodes.
Availability
SMBJ8.0A-M3/5B is available at Aetrix Electronics and suitable for automotive body control modules, industrial RS-485 sensor interfaces, and telecom PoE-powered device protection requiring stable component supply across extended temperature and surge stress conditions.
Supply support for SMBJ8.0A-M3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where sustained surge immunity and long-term parametric stability are mandatory.
FAQ
What is the clamping voltage of SMBJ8.0A-M3/5B at its rated peak pulse current?
The SMBJ8.0A-M3/5B has a maximum clamping voltage (VC) of 13.6 V at its rated peak pulse current (IPPM) of 44.1 A, measured using the standardized 10/1000 µs double-exponential waveform. This value defines the upper voltage limit imposed on protected circuitry during a full-power transient event and is confirmed in the Vishay datasheet revision 09-Jan-2024, page 2.
Is SMBJ8.0A-M3/5B suitable for automotive applications?
SMBJ8.0A-M3/5B is qualified to AEC-Q101 when ordered with HE3 or HM3 suffixes; the M3/5B variant is commercial-grade and not AEC-Q101 certified. For non-safety-critical automotive subsystems (e.g., infotainment power rails), SMBJ8.0A-M3/5B may be used with system-level validation, but SMBJ8.0AHM3_B/I is required for formal AEC-Q101 compliance per the Vishay ordering table on page 3.
What does the "M3" suffix indicate in SMBJ8.0A-M3/5B?
The "M3" suffix in SMBJ8.0A-M3/5B denotes halogen-free, RoHS-compliant construction meeting IPC-1752A material declarations and JEDEC J-STD-020 MSL Level 1 reflow requirements. It differentiates the part from E3 (RoHS only) and HM3 (AEC-Q101 + halogen-free) variants, and is specified in the Vishay mechanical data section on page 1.
How is polarity identified on SMBJ8.0A-M3/5B?
SMBJ8.0A-M3/5B uses a molded cathode band on the SMB (DO-214AA) package to identify the cathode terminal; the opposite end is the anode. This marking is visible under standard optical inspection and aligns with JEDEC DO-214AA mechanical drawings on page 5 of the Vishay datasheet. No marking is present on bidirectional variants, but SMBJ8.0A-M3/5B is unidirectional.
What is the thermal resistance of SMBJ8.0A-M3/5B, and how does it affect layout?
The SMBJ8.0A-M3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as defined in the Vishay thermal characteristics table (page 3). To maintain safe operation at elevated ambient temperatures, PCB layout must provide minimum pad area and avoid thermal isolation - insufficient copper reduces surge endurance and accelerates parameter drift.
SMBJ8.0A-M3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V
- Voltage - Breakdown (Min):
- 8.89V
- Voltage - Clamping (Max) @ Ipp:
- 13.6V
- Current - Peak Pulse (10/1000µs):
- 44.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ8.0A-M3/5B FAQ
1.How can I place an order for SMBJ8.0A-M3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.0A-M3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.0A-M3/5B reliable?
The price and inventory of SMBJ8.0A-M3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.0A-M3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ8.0A-M3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.0A-M3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.0A-M3/5B?
SMBJ8.0A-M3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.0A-M3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.0A-M3/5B?
For technical support, including SMBJ8.0A-M3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.0A-M3/5B requirements.
6.How does Aetrix verify that SMBJ8.0A-M3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ8.0A-M3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.0A-M3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ8.0A-M3/5B?
All SMBJ8.0A-M3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.0A-M3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.0A-M3/5B part is unused and in its original packaging.
Return procedure for SMBJ8.0A-M3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.0A-M3/5B Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
