Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ8.0CAHE3_A/I

Part No.:
SMBJ8.0CAHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ8.0CAHE3_A/I.pdf
Description:
TVS DIODE 8VWM 13.6VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,415

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ8.0CAHE3_A/I from Vishay General Semiconductor is a bidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for clamping voltage transients on signal or power lines. It features a 8.0 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 µs), and clamps to ≤13.6 V at 44.1 A peak surge current - deployed in automotive sensor interfaces, industrial I/O protection, and telecom line receivers.

For engineers reviewing the SMBJ8.0CAHE3_A/I datasheet, SMBJ8.0CAHE3_A/I pinout, SMBJ8.0CAHE3_A/I application, or SMBJ8.0CAHE3_A/I equivalent, key selection criteria include bidirectional clamping capability, AEC-Q101 qualification, 13.6 V max clamping voltage at rated IPPM, low thermal resistance (RθJL = 20 °C/W), and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.

Technical Context

This device operates as a voltage-clamped crowbar during ESD or lightning-induced surges, leveraging an avalanche breakdown mechanism across both polarities. Its bidirectional symmetry ensures identical VBR (min 8.89 V, max 9.83 V at 10 mA) and clamping behavior in forward and reverse directions.

Designed for high-reliability environments, SMBJ8.0CAHE3_A/I meets AEC-Q101 stress testing requirements and is rated for TJ = –55 °C to +150 °C operation. Its glass-passivated junction and matte tin-plated leads comply with J-STD-002 solderability and JESD201 Class 2 whisker resistance standards.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 8.0 V - maximum continuous reverse operating voltage before conduction begins
VBR (min/max) 8.89 V / 9.83 V at 10 mA - guaranteed avalanche breakdown threshold range for reliable triggering
VC @ IPPM ≤13.6 V at 44.1 A - clamping voltage under 600 W 10/1000 µs surge, limiting downstream IC stress
PPPM 600 W - peak pulse power handling per single transient event, derated above 25 °C ambient
RθJL 20 °C/W - low junction-to-lead thermal resistance enables efficient heat transfer to PCB copper
TJ max +150 °C - maximum junction temperature rating supports under-hood automotive use
AEC-Q101 Qualified - validated for automotive-grade reliability including HTOL, TC, UHAST, and ESD tests

Pinout & Package

Package: SMB (DO-214AA), surface-mount, bidirectional - no polarity marking; symmetrical cathode/anode terminals.

Pin/Terminal Circuit Role Design Meaning
Anode Transient current entry point (reverse polarity) Accepts surge current when voltage exceeds VWM in negative direction; connects to protected line
Cathode Transient current entry point (forward polarity) Accepts surge current when voltage exceeds VWM in positive direction; connects to protected line

Key Features

Feature Design Value
Bidirectional clamping Enables single-device protection of AC-coupled or floating signal lines without polarity concerns
600 W peak pulse power (10/1000 µs) Withstands high-energy transients common in automotive load-dump and industrial relay switching
AEC-Q101 qualified (HE3 suffix) Validated for automotive electronics per stress test requirements - suitable for engine control, ADAS sensors
Low RθJL = 20 °C/W Minimizes thermal runaway risk during repetitive surge events by rapidly dissipating heat into PCB copper
MSL Level 1 (260 °C peak reflow) Compatible with standard lead-free SMT reflow profiles without moisture sensitivity limitations

Applications

Automotive Sensor Interface Industrial PLC Analog Input

Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor front-ends (e.g., pressure, temperature) from ISO 7637-2 pulse 1/2a/5a transients.

IC Role / Device Role: Bidirectional TVS placed between signal line and ground, clamping fast-rising spikes before they reach precision amplifier inputs.

Use Value: Maintains signal integrity below 13.6 V clamp while surviving 44.1 A surges - critical for AEC-Q100-compliant systems.

Use Scenario: Shielding 4–20 mA current loop inputs in programmable logic controllers against field-wiring induced surges and ESD.

IC Role / Device Role: Low-capacitance (<100 pF typical at 0 V) bidirectional clamp shunting transients to ground without distorting DC loop accuracy.

Use Value: Enables robust operation in harsh factory environments where >1 kV EFT bursts occur - verified per IEC 61000-4-4.

Telecom Line Receiver Consumer USB Port Protection

Use Scenario: Safeguarding Ethernet PHY or DSL line drivers from lightning-induced longitudinal surges on twisted-pair cables.

IC Role / Device Role: Primary-level TVS on differential pair, placed before common-mode choke to absorb common-mode energy before it couples into IC.

Use Value: Clamps to ≤13.6 V within <1 ns response time, preventing latch-up or gate oxide damage in 2.5 V/3.3 V PHYs.

Use Scenario: Adding secondary overvoltage protection on USB 2.0 D+/D– lines behind integrated ESD arrays in smartphones and peripherals.

IC Role / Device Role: High-power backup clamp handling rare but destructive 600 W surges that exceed primary ESD diode ratings.

Use Value: Extends system-level surge immunity beyond IEC 61000-4-5 Level 3 (1 kV line-earth) without increasing board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ8.0CAHM3_A/I Halogen-free variant with identical electrical specs and AEC-Q101 qualification Required for RoHS-compliant automotive programs mandating halogen-free materials Select when compliance with JEDEC JS709E or IEC 61249-2-21 is mandatory
SMBJ8.0CA-E3/5B Commercial-grade (non-AEC-Q101), same SMB package and clamping performance Suitable for non-automotive industrial or consumer applications with lower reliability requirements Choose for cost-sensitive designs where automotive qualification is unnecessary

Compared with SMBJ8.0CAHE3_A/I, the HM3 variant adds halogen-free compliance without sacrificing performance, while the E3/5B offers identical protection at lower qualification cost - enabling tiered sourcing based on end-equipment requirements.

Availability

SMBJ8.0CAHE3_A/I is available at Aetrix Electronics and suitable for automotive sensor modules, industrial PLC I/O cards, and telecom line interface circuits requiring stable component supply with full AEC-Q101 traceability and long-term lifecycle support.

Supply support for SMBJ8.0CAHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific optimization.

The SMBJ series targets high-energy transient suppression in space-constrained, high-reliability applications - engineered for automotive, industrial, and telecom systems demanding repeatable clamping and robust surge endurance.

FAQ

What is the clamping voltage of SMBJ8.0CAHE3_A/I at its rated peak pulse current?

The SMBJ8.0CAHE3_A/I clamps to a maximum of 13.6 V when subjected to its rated peak pulse current of 44.1 A under the standardized 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream ICs remain within absolute maximum ratings.

Is SMBJ8.0CAHE3_A/I unidirectional or bidirectional, and how does that affect its circuit placement?

SMBJ8.0CAHE3_A/I is a bidirectional TVS diode, indicated by the "CA" suffix and absence of polarity marking on the SMB package. It conducts symmetrically in both directions, making it ideal for protecting AC-coupled lines, differential pairs, or floating nodes without requiring orientation verification during placement - unlike unidirectional variants such as SMBJ8.0AHE3_A/I which require correct cathode alignment.

Does SMBJ8.0CAHE3_A/I meet automotive qualification standards?

Yes, SMBJ8.0CAHE3_A/I carries the HE3 suffix, confirming it is AEC-Q101 qualified per Vishay's ordering nomenclature and documentation. This qualification covers high-temperature operating life, temperature cycling, unbiased highly accelerated stress test, and ESD robustness - validating its suitability for under-hood and chassis-mounted automotive electronics.

What is the thermal resistance from junction to lead (RθJL) for SMBJ8.0CAHE3_A/I, and why does it matter?

The SMBJ8.0CAHE3_A/I has a typical junction-to-lead thermal resistance (RθJL) of 20 °C/W, as specified in the Thermal Characteristics table of document 88392. This low value enables rapid heat transfer from the silicon junction to the PCB copper via the device leads - essential for sustaining repetitive surge events and avoiding thermal runaway in high-duty-cycle protection scenarios.

How does the 600 W peak pulse power rating of SMBJ8.0CAHE3_A/I relate to real-world surge waveforms?

The 600 W rating for SMBJ8.0CAHE3_A/I applies specifically to the 10/1000 µs double-exponential surge waveform defined by ANSI/IEEE C62.35 and REA standards. It represents the maximum instantaneous power the device can absorb without failure during a single transient - not a continuous dissipation capability. Real-world validation includes ISO 7637-2 Pulse 5a (load dump) and IEC 61000-4-5 combination wave testing.

SMBJ8.0CAHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
8V
Voltage - Breakdown (Min):
8.89V
Voltage - Clamping (Max) @ Ipp:
13.6V
Current - Peak Pulse (10/1000µs):
44.1A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ8.0CAHE3_A/I FAQ

1.How can I place an order for SMBJ8.0CAHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ8.0CAHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ8.0CAHE3_A/I reliable?

The price and inventory of SMBJ8.0CAHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.0CAHE3_A/I is usually 5 days.

3.What payment methods are accepted for SMBJ8.0CAHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.0CAHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ8.0CAHE3_A/I?

SMBJ8.0CAHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ8.0CAHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ8.0CAHE3_A/I?

For technical support, including SMBJ8.0CAHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.0CAHE3_A/I requirements.

6.How does Aetrix verify that SMBJ8.0CAHE3_A/I is sourced from the original manufacturer or authorized distributors?

All SMBJ8.0CAHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.0CAHE3_A/I meets industry standards.

7.What is the process for return or replacement of SMBJ8.0CAHE3_A/I?

All SMBJ8.0CAHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.0CAHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ8.0CAHE3_A/I part is unused and in its original packaging.

Return procedure for SMBJ8.0CAHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ8.0CAHE3_A/I Tags

  • SMBJ8.0CAHE3_A/I
  • SMBJ8.0CAHE3_A/I PDF
  • SMBJ8.0CAHE3_A/I Datasheet
  • SMBJ8.0CAHE3_A/I Specifications
  • SMBJ8.0CAHE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ8.0CAHE3_A/I
  • Buy SMBJ8.0CAHE3_A/I
  • SMBJ8.0CAHE3_A/I Price
  • SMBJ8.0CAHE3_A/I Distributor
  • SMBJ8.0CAHE3_A/I Supplier
  • SMBJ8.0CAHE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER