My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ8.0CHE3/52
;;2.jpg)
- Part No.:
- SMBJ8.0CHE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.0CHE3/52.pdf
- Description:
- TVS DIODE 8VWM 15VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:4,192
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ8.0CHE3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed to protect sensitive electronics against voltage transients induced by inductive load switching and lightning surges. It features a 8.0 V stand-off voltage (VWM), 8.89–9.83 V breakdown voltage (VBR) at 10 mA test current, and clamps up to 13.6 V at 44.1 A peak pulse current (IPPM) under 10/1000 µs waveform.
For engineers reviewing the SMBJ8.0CHE3/52 datasheet, SMBJ8.0CHE3/52 pinout, SMBJ8.0CHE3/52 application, or SMBJ8.0CHE3/52 equivalent, this device is selected for robust overvoltage protection in power rails, I/O lines, and sensor interfaces where AEC-Q101 qualification, low clamping voltage, and 600 W peak pulse power capability are required.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-banded polarity, leveraging a glass-passivated silicon junction for stable avalanche behavior. Its thermal resistance (RθJA = 100 °C/W) and maximum junction temperature of 150 °C support reliable operation in automotive and industrial ambient environments.
The device delivers 600 W peak pulse power (10/1000 µs) with a low incremental surge resistance and fast response time (<1 ps), enabling effective suppression of ESD, EFT, and surge events per IEC 61000-4-2/4-4/4-5. It meets MSL level 1 per J-STD-020 and is qualified to AEC-Q101 for automotive applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 8.0 V - Maximum continuous reverse working voltage before clamping begins; sets operating margin above circuit nominal voltage. |
| VBR (Breakdown Voltage) | 8.89–9.83 V at 10 mA - Confirmed avalanche onset range; ensures predictable turn-on during transients. |
| VC (Clamping Voltage) | 13.6 V at 44.1 A (10/1000 µs) - Peak voltage seen by protected circuit during worst-case surge; defines protection window. |
| PPPM (Peak Pulse Power) | 600 W - Sustains high-energy transients without failure; validated per standard 10/1000 µs waveform. |
| IPPM (Peak Pulse Current) | 44.1 A - Maximum non-repetitive surge current the device can safely divert; directly tied to PCB pad layout (0.2" × 0.2"). |
| TJmax | 150 °C - Enables use in under-hood automotive and high-temperature industrial environments without derating. |
| AEC-Q101 Qualified | Yes - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD stress per AEC specification. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal (for unidirectional operation) | Connected to ground or lower-potential rail; completes clamping path when cathode is at higher potential. |
| Cathode | Avalanche clamping terminal | Connected to protected line (e.g., 12 V supply or signal); conducts surge current to anode during overvoltage event. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Supports high-energy surge immunity in automotive power nets and industrial control inputs without thermal runaway. |
| AEC-Q101 qualification (HE3 suffix) | Validated for automotive electronics including engine control units, body controllers, and ADAS sensor interfaces. |
| Low clamping voltage (13.6 V @ 44.1 A) | Minimizes stress on downstream ICs such as microcontrollers, CAN transceivers, and analog front-ends. |
| MSL Level 1 (260 °C peak reflow) | Enables compatibility with standard lead-free SMT assembly processes without pre-baking or special handling. |
| Glass-passivated junction | Ensures stable VBR tolerance and long-term reliability under repeated surge stress and humidity exposure. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between power rail and chassis ground. Use Value: Limits transient voltage to ≤13.6 V, preventing latch-up or damage to 16-bit MCUs and LIN transceivers. |
Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loop) from ESD and field wiring surges. IC Role / Device Role / Timing Role: Standoff-clamp TVS connected across signal and return path near connector. Use Value: Clamps sub-100 ns ESD events to safe levels while maintaining <1 µA leakage at 8.0 V operating voltage. |
| Consumer Device USB Port Protection | Telecom Line Card Surge Suppression |
|
Use Scenario: Safeguarding USB VBUS and D+/D− lines in portable chargers and docking stations. IC Role / Device Role / Timing Role: Discrete unidirectional TVS on VBUS rail; bidirectional variants used on data lines. Use Value: Withstands ±15 kV contact ESD (IEC 61000-4-2) while adding <0.5 pF capacitance to preserve signal integrity. |
Use Scenario: Front-end protection of DSL or POTS line interface circuits exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Primary surge diverter mounted at board edge before transformer or SLIC IC. Use Value: Handles 600 W surge energy (10/1000 µs) without degradation, enabling compliance with GR-1089-CORE. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.0AHE3/52 | No AEC-Q101 qualification; commercial-grade only (E3 suffix vs HE3). | Suitable for non-automotive industrial or consumer designs where automotive reliability testing is not mandated. | Select when cost sensitivity outweighs automotive qualification requirements. |
| SAC8.0HE3/52 | Same VWM and VC, but 400 W PPPM; smaller SOD-123FL package (lower IPPM = 27.5 A). | Better suited for space-constrained, lower-energy applications like wearables or IoT sensors. | Choose for compact layouts where 600 W rating is unnecessary and board area is critical. |
Compared with SMBJ8.0CHE3/52, SMBJ8.0AHE3/52 offers identical electrical specs but lacks AEC-Q101 validation, while SAC8.0HE3/52 trades peak power and surge current for footprint reduction-making each suitable for distinct design priorities: automotive compliance, cost-driven commercial use, or miniaturized portable systems.
Availability
SMBJ8.0CHE3/52 is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor systems, and telecom infrastructure requiring stable component supply with AEC-Q101 assurance and full traceability.
Supply support for SMBJ8.0CHE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific performance.
The SMBJ series is engineered for high-energy transient suppression in harsh environments, targeting automotive, industrial, and communications systems where robustness and standardized qualification are mandatory.
FAQ
What is the clamping voltage of SMBJ8.0CHE3/52 at its rated peak pulse current?
The SMBJ8.0CHE3/52 clamps to a maximum of 13.6 V at its specified peak pulse current of 44.1 A under the 10/1000 µs waveform. This value is measured with the device mounted on 0.2" × 0.2" copper pads per JEDEC standards and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ8.0CHE3/52 maintains this clamping performance across its qualified temperature range.
Is SMBJ8.0CHE3/52 suitable for automotive applications?
Yes, SMBJ8.0CHE3/52 is AEC-Q101 qualified, making it suitable for automotive applications including engine control modules, body electronics, and ADAS sensor interfaces. The HE3 suffix explicitly denotes RoHS-compliant and AEC-Q101-qualified construction. Its 150 °C maximum junction temperature and MSL Level 1 rating further support under-hood and infotainment system deployment. The SMBJ8.0CHE3/52 meets automotive reliability stress requirements without derating.
How does the SMBJ8.0CHE3/52 differ from the SMBJ8.0AHE3/52 variant?
The SMBJ8.0CHE3/52 and SMBJ8.0AHE3/52 share identical electrical specifications-including VWM, VBR, VC, and PPPM-but differ in qualification: SMBJ8.0CHE3/52 carries the "HE3" suffix indicating AEC-Q101 qualification, whereas SMBJ8.0AHE3/52 uses "HE3" but lacks formal AEC-Q101 validation per Vishay's ordering nomenclature. The SMBJ8.0CHE3/52 is designated for automotive-grade use; SMBJ8.0AHE3/52 is commercial-grade with same form and fit.
What is the thermal resistance of SMBJ8.0CHE3/52, and how does it affect layout?
The SMBJ8.0CHE3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on standard PCB pads. This value assumes minimum recommended copper land patterns (0.2" × 0.2" per terminal). To maintain safe junction temperatures under repetitive surge conditions, designers must ensure adequate copper pour and avoid excessive trace length. The SMBJ8.0CHE3/52's RθJL of 20 °C/W also supports heat conduction through leads into internal ground planes.
Does SMBJ8.0CHE3/52 have polarity marking, and how is it oriented in-circuit?
Yes, SMBJ8.0CHE3/52 is unidirectional and marked with a cathode band on the package body. During circuit integration, the banded end connects to the line being protected (e.g., 12 V rail), while the unmarked end (anode) connects to ground or the return path. This orientation enables forward conduction only during negative transients on the anode side, ensuring proper clamping action. Reversal would prevent protection functionality. The SMBJ8.0CHE3/52 follows standard DO-214AA polarity conventions.
SMBJ8.0CHE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 8V
- Voltage - Breakdown (Min):
- 8.89V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 40A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ8.0CHE3/52 FAQ
1.How can I place an order for SMBJ8.0CHE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.0CHE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.0CHE3/52 reliable?
The price and inventory of SMBJ8.0CHE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.0CHE3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ8.0CHE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.0CHE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.0CHE3/52?
SMBJ8.0CHE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.0CHE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.0CHE3/52?
For technical support, including SMBJ8.0CHE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.0CHE3/52 requirements.
6.How does Aetrix verify that SMBJ8.0CHE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ8.0CHE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.0CHE3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ8.0CHE3/52?
All SMBJ8.0CHE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.0CHE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.0CHE3/52 part is unused and in its original packaging.
Return procedure for SMBJ8.0CHE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.0CHE3/52 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
