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Vishay General Semiconductor - Diodes Division SMBJ8.0D-M3/I
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- Part No.:
- SMBJ8.0D-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.0D-M3/I.pdf
- Description:
- TVS DIODE 8VWM 13.4VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,310
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Product details
Overview
SMBJ8.0D-M3/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping inductive switching transients and ESD events on power and signal lines. It features a 9.03–9.69 V breakdown voltage (VBR) at 1 mA, 8.0 V stand-off voltage (VWM), 13.4 V clamping voltage (VC) at 35 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ8.0D-M3/I datasheet, SMBJ8.0D-M3/I pinout, SMBJ8.0D-M3/I application, or SMBJ8.0D-M3/I equivalent, key selection criteria include unidirectional polarity, ±3.5 % VBR tolerance, low leakage (<500 μA at VWM), M3 halogen-free RoHS-compliant construction, and compatibility with automated SMT placement on standard SMB pad layouts.
Technical Context
This TVS diode operates as a clamping device in parallel with protected circuitry, conducting only when reverse voltage exceeds VBR. Its silicon avalanche structure delivers sub-nanosecond response time and low dynamic impedance, enabling effective suppression of fast-rising transients such as IEC 61000-4-5 surge events and ISO 7637-2 load dump spikes.
The SMBJ8.0D-M3/I is rated for 150 °C maximum junction temperature and exhibits thermal resistance RθJA = 125 °C/W (on minimum pad layout) and RθJM = 20 °C/W, supporting reliable operation under repetitive surge conditions when mounted per Vishay's recommended 5.0 mm × 5.0 mm copper pad area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 9.03 V / 9.69 V at 1 mA - defines precise clamping onset threshold with tight ±3.5 % tolerance |
| VWM | 8.0 V - maximum continuous reverse operating voltage before significant leakage begins |
| VC @ IPPM | 13.4 V at 35 A - clamped voltage during 600 W 10/1000 μs surge, limiting stress on downstream components |
| IPPM | 35 A - peak surge current capability under standardized waveform, derated above 25 °C ambient |
| PPPM | 600 W - peak pulse power handling capacity, validated per ANSI/IEEE C62.35 standards |
| ID @ VWM | <500 μA - ultra-low reverse leakage ensures minimal standby power loss in battery-powered systems |
| TJ max | 150 °C - enables operation in high-temperature industrial environments without derating penalties |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, M3 grade (JESD 201 Class 2 whisker resistant), matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity indicated by cathode band on case end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lower-potential rail; forms current path during reverse-biased clamping |
| Cathode (banded end) | High-side input terminal | Connected to protected line (e.g., 12 V rail or signal trace); conducts avalanche current when VIN > VBR |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables tighter system-level overvoltage margin control versus looser-tolerance alternatives |
| 600 W peak pulse power (10/1000 μs) | Supports robust protection against IEC 61000-4-5 Level 4 surges (4 kV line-earth) without degradation |
| Low incremental surge resistance | Minimizes VC overshoot during fast transients, improving clamping accuracy |
| MSL Level 1 (260 °C peak reflow) | Compatible with standard lead-free SMT reflow profiles without moisture sensitivity concerns |
| Unidirectional polarity | Prevents forward conduction during normal DC bias, eliminating unwanted loading on supply rails |
Applications
| Industrial Power Supply Protection | Automotive Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V input rails in programmable logic controllers (PLCs) against inductive kickback from relay coils and solenoid drivers. IC Role / Device Role / Timing Role: Unidirectional TVS placed across input terminals to clamp transients before they reach DC/DC converters and microcontrollers. Use Value: Limits voltage excursion to ≤13.4 V during 35 A surges, preventing latch-up or gate oxide damage in downstream ICs. | Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loops) in engine control units (ECUs) exposed to ISO 7637-2 pulse 1 and pulse 2a transients. IC Role / Device Role / Timing Role: TVS connected between signal line and chassis ground to shunt induced energy away from precision DACs and op-amps. Use Value: Sub-ns response ensures clamping occurs before transient propagates into sensitive analog front-end circuitry. |
| Consumer USB Port ESD Protection | Telecom Line Card Surge Suppression |
Use Scenario: Adding secondary-level ESD protection on VBUS lines of USB 2.0 host ports in set-top boxes and smart displays. IC Role / Device Role / Timing Role: Standoff-rated TVS placed upstream of USB switch ICs to absorb contact discharge events up to ±15 kV (IEC 61000-4-2). Use Value: 8.0 V VWM allows full 5 V USB operation while clamping ESD to <13.4 V, preserving signal integrity and IC reliability. | Use Scenario: Front-end surge protection on -48 V DC distribution lines in telecom base station line cards subjected to lightning-induced surges. IC Role / Device Role / Timing Role: Unidirectional TVS installed between -48 V rail and ground to clamp positive-going transients while blocking negative excursions. Use Value: 600 W rating supports multi-event surge endurance required by GR-1089-CORE specifications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.0A-M3/I | Same VBR, VWM, and package; differs only in marking code and minor test condition phrasing - functionally identical | No functional difference; both meet same Vishay specification 87606 revision | Select SMBJ8.0A-M3/I if legacy BOM references "A" suffix; otherwise SMBJ8.0D-M3/I is current preferred part |
| SMCJ8.0A | Higher 1500 W PPPM, larger SMC (DO-214AB) package, 12.5 V VC at 49.3 A - physically incompatible footprint | Used where higher surge energy absorption is required and board space permits larger package | Choose SMCJ8.0A only when 600 W is insufficient and PCB layout allows SMC pad replacement |
Compared with SMBJ8.0A-M3/I (identical electrical performance, alternate marking) and SMCJ8.0A (higher power, larger SMC package), SMBJ8.0D-M3/I offers optimal balance of compact SMB footprint, precise 8.0 V standoff, and verified 600 W surge capability for space-constrained industrial and automotive PCBs.
Availability
SMBJ8.0D-M3/I is available at Aetrix Electronics and suitable for industrial power supplies, automotive sensor modules, consumer USB interfaces, and telecom line cards requiring stable component supply with guaranteed long-term sourcing.
Supply support for SMBJ8.0D-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and industrial-grade qualification.
The SMBJ series is engineered specifically for high-reliability transient suppression in harsh environments - targeting applications demanding tight VBR tolerance, low leakage, and repeatable clamping performance across temperature and lifetime.
FAQ
What is the breakdown voltage range of SMBJ8.0D-M3/I?
The SMBJ8.0D-M3/I has a specified breakdown voltage (VBR) range of 9.03 V to 9.69 V at 1 mA test current, corresponding to ±3.5 % tolerance around the nominal 9.36 V typical value. This tight tolerance ensures consistent clamping behavior across production lots and supports accurate system-level overvoltage margin design in applications like 12 V automotive circuits and industrial power rails.
Is SMBJ8.0D-M3/I unidirectional or bidirectional?
SMBJ8.0D-M3/I is a unidirectional transient voltage suppressor, indicated by the "D" suffix (versus "CD" for bidirectional variants). It conducts only in reverse bias above VBR, with cathode marked by a band on the SMB package. This configuration prevents forward conduction during normal DC operation, making it ideal for protecting positive supply rails and single-polarity signal lines without loading the circuit.
What is the clamping voltage of SMBJ8.0D-M3/I at its rated surge current?
The SMBJ8.0D-M3/I clamps to a maximum of 13.4 V at its rated peak pulse current (IPPM) of 35 A, measured using the standardized 10/1000 μs double-exponential waveform. This VC value represents the upper limit of voltage seen by protected components during worst-case surge events, directly enabling safe interface design with 15 V-tolerant ICs and MOSFETs.
Does SMBJ8.0D-M3/I comply with RoHS and halogen-free requirements?
Yes, SMBJ8.0D-M3/I carries the "M3" suffix, which certifies compliance with RoHS Directive 2011/65/EU, halogen-free construction (per IEC 61249-2-21), and industrial-grade reliability including JESD 201 Class 2 whisker resistance. The molding compound meets UL 94 V-0 flammability rating, and matte tin-plated leads satisfy solderability standards J-STD-002 and JESD 22-B102.
What is the thermal resistance of SMBJ8.0D-M3/I under standard mounting conditions?
SMBJ8.0D-M3/I has a typical junction-to-ambient thermal resistance (RθJA) of 125 °C/W when mounted on the minimum recommended PCB pad layout, and 100 °C/W on a 5.0 mm × 5.0 mm copper pad. Its junction-to-mount (RθJM) is 20 °C/W, supporting thermal management in high-power-density designs. These values enable accurate junction temperature estimation during repetitive surge events per Fig. 2 in Vishay document 87606.
SMBJ8.0D-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V
- Voltage - Breakdown (Min):
- 9.03V
- Voltage - Clamping (Max) @ Ipp:
- 13.4V
- Current - Peak Pulse (10/1000µs):
- 44.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ8.0D-M3/I FAQ
1.How can I place an order for SMBJ8.0D-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.0D-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.0D-M3/I reliable?
The price and inventory of SMBJ8.0D-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.0D-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ8.0D-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.0D-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.0D-M3/I?
SMBJ8.0D-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.0D-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.0D-M3/I?
For technical support, including SMBJ8.0D-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.0D-M3/I requirements.
6.How does Aetrix verify that SMBJ8.0D-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ8.0D-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.0D-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ8.0D-M3/I?
All SMBJ8.0D-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.0D-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.0D-M3/I part is unused and in its original packaging.
Return procedure for SMBJ8.0D-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.0D-M3/I Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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