Vishay General Semiconductor - Diodes Division SMBJ8.0HE3/52
- Part No.:
- SMBJ8.0HE3/52
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.0HE3/52.pdf
- Description:
- TVS DIODE 8VWM 15VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:4,679
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ8.0HE3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for primary overvoltage protection of DC power rails and signal lines. It features a 8.0 V stand-off voltage (VWM), 8.89–9.83 V breakdown voltage (VBR) at 10 mA, 13.6 V maximum clamping voltage (VC) at 44.1 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive power supply inputs, industrial sensor interfaces, and USB port ESD protection.
For engineers reviewing the SMBJ8.0HE3/52 datasheet, SMBJ8.0HE3/52 pinout, SMBJ8.0HE3/52 application, or SMBJ8.0HE3/52 equivalent, key selection criteria include its AEC-Q101 qualification, low clamping ratio (VC/VBR ≈ 1.53), 1.0 µA max reverse leakage at VWM, SMB (DO-214AA) package compatibility with automated SMT placement, and thermal resistance (RθJA = 100 °C/W) under standard PCB pad layout.
Technical Context
The SMBJ8.0HE3/52 operates as a unidirectional avalanche diode, conducting only when reverse voltage exceeds its specified breakdown range (8.89–9.83 V). Its junction structure is glass passivated for stable surge performance and long-term reliability under repetitive transients.
It delivers 600 W peak pulse power handling per 10/1000 µs waveform with 0.01 % duty cycle, clamps to ≤13.6 V at 44.1 A, and exhibits a temperature coefficient of VBR at +0.069 %/°C - enabling predictable derating above 25 °C ambient per Figure 2 in the datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.0 V - maximum continuous reverse operating voltage before conduction begins; defines safe DC rail margin for 9–12 V systems. |
| VBR (min/max) | 8.89 V / 9.83 V at IT = 10 mA - verified avalanche onset range; ensures consistent triggering across production lots. |
| VC @ IPPM | 13.6 V at 44.1 A - clamping voltage during worst-case 600 W transient; protects downstream ICs rated ≤15 V absolute max. |
| PPPM | 600 W - peak pulse power capability with 10/1000 µs waveform; meets IEC 61000-4-5 Level 4 surge immunity requirements. |
| ID @ VWM | 1.0 µA max - ultra-low reverse leakage at stand-off voltage; avoids parasitic loading on low-power sensor or battery-backed circuits. |
| TJ max. | +150 °C - maximum junction temperature; supports operation in under-hood automotive and industrial enclosures. |
| Package | SMB (DO-214AA) - standardized surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height; compatible with IPC-7351B density level B. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; polarity indicated by cathode band (cathode terminal).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side (e.g., GND or return path); enables unidirectional clamping from cathode to anode during overvoltage events. |
| Cathode | Avalanche conduction terminal | Connected to protected line (e.g., 8 V rail or signal input); conducts surge current to anode when reverse voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance - suitable for engine control units and ADAS power domains. |
| 600 W peak pulse power | Withstands IEC 61000-4-5 combination wave surges up to 4 kV (open-circuit)/2 kA (short-circuit) without degradation when mounted per recommended 5.0 mm × 5.0 mm copper pads. |
| Low clamping ratio (VC/VBR ≈ 1.53) | Minimizes voltage overshoot during clamping - critical for protecting 12 V logic interfaces and microcontroller I/O pins with tight absolute maximum ratings. |
| MSL Level 1 (JEDEC J-STD-020) | Unlimited floor life at ≤30 °C/60 % RH; supports lead-free reflow up to 260 °C peak without moisture-induced popcorning. |
| Glass passivated junction | Ensures stable VBR and low leakage over 10+ years in humid or high-bias industrial environments - no degradation from surface contamination or humidity ingress. |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: 12 V battery-fed ECUs exposed to load dump (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Primary TVS clamp placed upstream of LDO regulators and CAN transceivers to limit input voltage to ≤13.6 V during 100 ms surges. Use Value: Prevents regulator latch-up and transceiver damage while maintaining system uptime during vehicle cranking and alternator faults. |
Use Scenario: 4–20 mA current loop sensors in factory automation subject to cable ESD and inductive switching noise. IC Role / Device Role / Timing Role: Unidirectional shunt protector across sensor output terminals to divert fast transients (<1 ns rise time) before reaching ADC front-end. Use Value: Maintains analog measurement accuracy within ±0.1 % full scale by limiting transient-induced offset shift and preventing ADC saturation. |
| USB 2.0 Port ESD Suppression | DC-DC Converter Input Rail Clamp |
|
Use Scenario: Consumer electronics USB ports subjected to ±15 kV air discharge per IEC 61000-4-2. IC Role / Device Role / Timing Role: Low-capacitance TVS (CJ ≈ 200 pF at 0 V) placed between VBUS and GND to clamp ESD pulses before USB controller PHY. Use Value: Passes USB 2.0 eye diagram compliance with <0.5 dB insertion loss at 480 MHz while surviving >1000 ESD strikes. |
Use Scenario: 24 V input to isolated flyback converter in programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: Bulk transient suppressor across primary-side input capacitor to absorb switching spikes and lightning-induced surges. Use Value: Extends electrolytic capacitor lifetime by reducing RMS ripple stress and prevents MOSFET avalanche failure during 600 W transient events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.0A-E3/52 | Commercial-grade (non-AEC-Q101); identical VWM, VBR, VC, and PPPM specs; same SMB package. | Lacks automotive qualification testing - unsuitable for under-hood or safety-critical modules. | Select when cost sensitivity outweighs automotive reliability requirements and environmental stress validation is not mandated. |
| SAC8.0 | Lower 400 W PPPM rating; higher VC = 15.0 V at 32 A; same VWM and SMB package; not AEC-Q101 qualified. | Reduced surge margin and higher clamping voltage limit use to non-safety-critical consumer or office equipment. | Choose only if legacy SAC-series inventory exists and 600 W surge immunity is not required per system-level test plan. |
Compared with SMBJ8.0A-E3/52 and SAC8.0, the SMBJ8.0HE3/52 uniquely combines AEC-Q101 qualification, 600 W surge capability, and 13.6 V clamping - making it the sole option for automotive power domain protection where both reliability and precise voltage limiting are mandatory.
Availability
SMBJ8.0HE3/52 is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and USB power delivery systems requiring stable component supply with traceable sourcing and long-term lifecycle support.
Supply support for SMBJ8.0HE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, surge robustness, and automotive qualification.
The SMBJ series was engineered specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where failure modes must be mitigated without compromising signal integrity or power efficiency.
FAQ
What is the maximum clamping voltage of SMBJ8.0HE3/52 under a 600 W transient?
The SMBJ8.0HE3/52 clamps to a maximum of 13.6 V when subjected to its rated 600 W peak pulse power with a 10/1000 µs waveform. This occurs at a peak pulse current (IPPM) of 44.1 A, as specified in the Electrical Characteristics table on page 2 of Vishay document 88392. The clamping voltage is measured across the device terminals under standardized surge conditions and remains stable across its operational temperature range.
Is SMBJ8.0HE3/52 suitable for bidirectional signal line protection?
No, SMBJ8.0HE3/52 is a unidirectional TVS diode and is not rated for bidirectional operation. Its cathode band indicates polarity, and it conducts only when reverse-biased beyond VBR. For bidirectional protection, Vishay specifies the CA-suffix variant (e.g., SMBJ8.0CA), which has symmetrical breakdown in both directions and no polarity marking. Using SMBJ8.0HE3/52 on AC or differential signal lines risks forward conduction and failure.
Does SMBJ8.0HE3/52 meet automotive qualification standards?
Yes, SMBJ8.0HE3/52 is explicitly AEC-Q101 qualified, as confirmed in the Mechanical Data section and Ordering Information table of Vishay document 88392. The "HE3" suffix denotes RoHS-compliant and AEC-Q101 qualified construction. This includes validation for temperature cycling, high-temperature reverse bias (HTRB), and surge endurance - making it suitable for under-hood and chassis-mounted automotive applications.
What is the thermal resistance of SMBJ8.0HE3/52, and how does it affect PCB layout?
The SMBJ8.0HE3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on the minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, per the Thermal Characteristics table. To maintain TJ ≤ 150 °C under sustained 5.0 W power dissipation, designers must ensure adequate copper area and avoid excessive ambient temperatures - undersized pads will cause premature thermal shutdown or parametric drift.
How does the leakage current of SMBJ8.0HE3/52 impact low-power sensor circuits?
The SMBJ8.0HE3/52 exhibits a maximum reverse leakage current (ID) of 1.0 µA at its 8.0 V stand-off voltage (VWM), as tested per the Electrical Characteristics table. This ultra-low leakage ensures minimal loading on high-impedance sensor outputs or battery-backed monitoring circuits - for example, it introduces <8 nW of standby power loss at 8 V, preserving multi-year battery life in IoT node designs without degrading signal-to-noise ratio.
SMBJ8.0HE3/52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V
- Voltage - Breakdown (Min):
- 8.89V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 40A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ8.0HE3/52 FAQ
1.How can I place an order for SMBJ8.0HE3/52 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.0HE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.0HE3/52 reliable?
The price and inventory of SMBJ8.0HE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.0HE3/52 is usually 5 days.
3.What payment methods are accepted for SMBJ8.0HE3/52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.0HE3/52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.0HE3/52?
SMBJ8.0HE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.0HE3/52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.0HE3/52?
For technical support, including SMBJ8.0HE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.0HE3/52 requirements.
6.How does Aetrix verify that SMBJ8.0HE3/52 is sourced from the original manufacturer or authorized distributors?
All SMBJ8.0HE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.0HE3/52 meets industry standards.
7.What is the process for return or replacement of SMBJ8.0HE3/52?
All SMBJ8.0HE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.0HE3/52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.0HE3/52 part is unused and in its original packaging.
Return procedure for SMBJ8.0HE3/52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.0HE3/52 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)