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Vishay General Semiconductor - Diodes Division SMBJ8.0HE3/52

Part No.:
SMBJ8.0HE3/52
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ8.0HE3/52.pdf
Description:
TVS DIODE 8VWM 15VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,679

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Product details

Overview

SMBJ8.0HE3/52 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for primary overvoltage protection of DC power rails and signal lines. It features a 8.0 V stand-off voltage (VWM), 8.89–9.83 V breakdown voltage (VBR) at 10 mA, 13.6 V maximum clamping voltage (VC) at 44.1 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive power supply inputs, industrial sensor interfaces, and USB port ESD protection.

For engineers reviewing the SMBJ8.0HE3/52 datasheet, SMBJ8.0HE3/52 pinout, SMBJ8.0HE3/52 application, or SMBJ8.0HE3/52 equivalent, key selection criteria include its AEC-Q101 qualification, low clamping ratio (VC/VBR ≈ 1.53), 1.0 µA max reverse leakage at VWM, SMB (DO-214AA) package compatibility with automated SMT placement, and thermal resistance (RθJA = 100 °C/W) under standard PCB pad layout.

Technical Context

The SMBJ8.0HE3/52 operates as a unidirectional avalanche diode, conducting only when reverse voltage exceeds its specified breakdown range (8.89–9.83 V). Its junction structure is glass passivated for stable surge performance and long-term reliability under repetitive transients.

It delivers 600 W peak pulse power handling per 10/1000 µs waveform with 0.01 % duty cycle, clamps to ≤13.6 V at 44.1 A, and exhibits a temperature coefficient of VBR at +0.069 %/°C - enabling predictable derating above 25 °C ambient per Figure 2 in the datasheet.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 8.0 V - maximum continuous reverse operating voltage before conduction begins; defines safe DC rail margin for 9–12 V systems.
VBR (min/max) 8.89 V / 9.83 V at IT = 10 mA - verified avalanche onset range; ensures consistent triggering across production lots.
VC @ IPPM 13.6 V at 44.1 A - clamping voltage during worst-case 600 W transient; protects downstream ICs rated ≤15 V absolute max.
PPPM 600 W - peak pulse power capability with 10/1000 µs waveform; meets IEC 61000-4-5 Level 4 surge immunity requirements.
ID @ VWM 1.0 µA max - ultra-low reverse leakage at stand-off voltage; avoids parasitic loading on low-power sensor or battery-backed circuits.
TJ max. +150 °C - maximum junction temperature; supports operation in under-hood automotive and industrial enclosures.
Package SMB (DO-214AA) - standardized surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height; compatible with IPC-7351B density level B.

Pinout & Package

Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; polarity indicated by cathode band (cathode terminal).

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to lower-potential side (e.g., GND or return path); enables unidirectional clamping from cathode to anode during overvoltage events.
Cathode Avalanche conduction terminal Connected to protected line (e.g., 8 V rail or signal input); conducts surge current to anode when reverse voltage exceeds VBR.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance - suitable for engine control units and ADAS power domains.
600 W peak pulse power Withstands IEC 61000-4-5 combination wave surges up to 4 kV (open-circuit)/2 kA (short-circuit) without degradation when mounted per recommended 5.0 mm × 5.0 mm copper pads.
Low clamping ratio (VC/VBR ≈ 1.53) Minimizes voltage overshoot during clamping - critical for protecting 12 V logic interfaces and microcontroller I/O pins with tight absolute maximum ratings.
MSL Level 1 (JEDEC J-STD-020) Unlimited floor life at ≤30 °C/60 % RH; supports lead-free reflow up to 260 °C peak without moisture-induced popcorning.
Glass passivated junction Ensures stable VBR and low leakage over 10+ years in humid or high-bias industrial environments - no degradation from surface contamination or humidity ingress.

Applications

Automotive Power Input Protection Industrial Sensor Signal Line Protection

Use Scenario: 12 V battery-fed ECUs exposed to load dump (ISO 7637-2 Pulse 5a) and alternator ripple.

IC Role / Device Role / Timing Role: Primary TVS clamp placed upstream of LDO regulators and CAN transceivers to limit input voltage to ≤13.6 V during 100 ms surges.

Use Value: Prevents regulator latch-up and transceiver damage while maintaining system uptime during vehicle cranking and alternator faults.

Use Scenario: 4–20 mA current loop sensors in factory automation subject to cable ESD and inductive switching noise.

IC Role / Device Role / Timing Role: Unidirectional shunt protector across sensor output terminals to divert fast transients (<1 ns rise time) before reaching ADC front-end.

Use Value: Maintains analog measurement accuracy within ±0.1 % full scale by limiting transient-induced offset shift and preventing ADC saturation.

USB 2.0 Port ESD Suppression DC-DC Converter Input Rail Clamp

Use Scenario: Consumer electronics USB ports subjected to ±15 kV air discharge per IEC 61000-4-2.

IC Role / Device Role / Timing Role: Low-capacitance TVS (CJ ≈ 200 pF at 0 V) placed between VBUS and GND to clamp ESD pulses before USB controller PHY.

Use Value: Passes USB 2.0 eye diagram compliance with <0.5 dB insertion loss at 480 MHz while surviving >1000 ESD strikes.

Use Scenario: 24 V input to isolated flyback converter in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Bulk transient suppressor across primary-side input capacitor to absorb switching spikes and lightning-induced surges.

Use Value: Extends electrolytic capacitor lifetime by reducing RMS ripple stress and prevents MOSFET avalanche failure during 600 W transient events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ8.0A-E3/52 Commercial-grade (non-AEC-Q101); identical VWM, VBR, VC, and PPPM specs; same SMB package. Lacks automotive qualification testing - unsuitable for under-hood or safety-critical modules. Select when cost sensitivity outweighs automotive reliability requirements and environmental stress validation is not mandated.
SAC8.0 Lower 400 W PPPM rating; higher VC = 15.0 V at 32 A; same VWM and SMB package; not AEC-Q101 qualified. Reduced surge margin and higher clamping voltage limit use to non-safety-critical consumer or office equipment. Choose only if legacy SAC-series inventory exists and 600 W surge immunity is not required per system-level test plan.

Compared with SMBJ8.0A-E3/52 and SAC8.0, the SMBJ8.0HE3/52 uniquely combines AEC-Q101 qualification, 600 W surge capability, and 13.6 V clamping - making it the sole option for automotive power domain protection where both reliability and precise voltage limiting are mandatory.

Availability

SMBJ8.0HE3/52 is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and USB power delivery systems requiring stable component supply with traceable sourcing and long-term lifecycle support.

Supply support for SMBJ8.0HE3/52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, surge robustness, and automotive qualification.

The SMBJ series was engineered specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and telecom infrastructure where failure modes must be mitigated without compromising signal integrity or power efficiency.

FAQ

What is the maximum clamping voltage of SMBJ8.0HE3/52 under a 600 W transient?

The SMBJ8.0HE3/52 clamps to a maximum of 13.6 V when subjected to its rated 600 W peak pulse power with a 10/1000 µs waveform. This occurs at a peak pulse current (IPPM) of 44.1 A, as specified in the Electrical Characteristics table on page 2 of Vishay document 88392. The clamping voltage is measured across the device terminals under standardized surge conditions and remains stable across its operational temperature range.

Is SMBJ8.0HE3/52 suitable for bidirectional signal line protection?

No, SMBJ8.0HE3/52 is a unidirectional TVS diode and is not rated for bidirectional operation. Its cathode band indicates polarity, and it conducts only when reverse-biased beyond VBR. For bidirectional protection, Vishay specifies the CA-suffix variant (e.g., SMBJ8.0CA), which has symmetrical breakdown in both directions and no polarity marking. Using SMBJ8.0HE3/52 on AC or differential signal lines risks forward conduction and failure.

Does SMBJ8.0HE3/52 meet automotive qualification standards?

Yes, SMBJ8.0HE3/52 is explicitly AEC-Q101 qualified, as confirmed in the Mechanical Data section and Ordering Information table of Vishay document 88392. The "HE3" suffix denotes RoHS-compliant and AEC-Q101 qualified construction. This includes validation for temperature cycling, high-temperature reverse bias (HTRB), and surge endurance - making it suitable for under-hood and chassis-mounted automotive applications.

What is the thermal resistance of SMBJ8.0HE3/52, and how does it affect PCB layout?

The SMBJ8.0HE3/52 has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on the minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, per the Thermal Characteristics table. To maintain TJ ≤ 150 °C under sustained 5.0 W power dissipation, designers must ensure adequate copper area and avoid excessive ambient temperatures - undersized pads will cause premature thermal shutdown or parametric drift.

How does the leakage current of SMBJ8.0HE3/52 impact low-power sensor circuits?

The SMBJ8.0HE3/52 exhibits a maximum reverse leakage current (ID) of 1.0 µA at its 8.0 V stand-off voltage (VWM), as tested per the Electrical Characteristics table. This ultra-low leakage ensures minimal loading on high-impedance sensor outputs or battery-backed monitoring circuits - for example, it introduces <8 nW of standby power loss at 8 V, preserving multi-year battery life in IoT node designs without degrading signal-to-noise ratio.

SMBJ8.0HE3/52 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
8V
Voltage - Breakdown (Min):
8.89V
Voltage - Clamping (Max) @ Ipp:
15V
Current - Peak Pulse (10/1000µs):
40A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

SMBJ8.0HE3/52 FAQ

1.How can I place an order for SMBJ8.0HE3/52 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ8.0HE3/52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ8.0HE3/52 reliable?

The price and inventory of SMBJ8.0HE3/52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.0HE3/52 is usually 5 days.

3.What payment methods are accepted for SMBJ8.0HE3/52?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.0HE3/52 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ8.0HE3/52?

SMBJ8.0HE3/52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ8.0HE3/52 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ8.0HE3/52?

For technical support, including SMBJ8.0HE3/52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.0HE3/52 requirements.

6.How does Aetrix verify that SMBJ8.0HE3/52 is sourced from the original manufacturer or authorized distributors?

All SMBJ8.0HE3/52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.0HE3/52 meets industry standards.

7.What is the process for return or replacement of SMBJ8.0HE3/52?

All SMBJ8.0HE3/52 units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.0HE3/52, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ8.0HE3/52 part is unused and in its original packaging.

Return procedure for SMBJ8.0HE3/52:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ8.0HE3/52 Tags

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