Vishay General Semiconductor - Diodes Division SMBJ85AHE3/5B
- Part No.:
- SMBJ85AHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ85AHE3/5B.pdf
- Description:
- TVS DIODE 85VWM 137VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:2,809
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ85AHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 85 V stand-off voltage (VWM), 94.4–104 V breakdown voltage (VBR) at 1 mA, 137 V maximum clamping voltage (VC) at 4.4 A peak pulse current (IPPM), and 600 W peak pulse power capability with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ85AHE3/5B datasheet, SMBJ85AHE3/5B pinout, SMBJ85AHE3/5B application, or SMBJ85AHE3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and compliance with UL 497B surge protector classification.
Technical Context
This TVS diode operates as a voltage-clamping protection device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable leakage performance, while low incremental surge resistance enables effective energy diversion during transient events such as inductive load switching or ESD.
The SMBJ85AHE3/5B is rated for 600 W peak pulse power (10/1000 µs), supports 100 A non-repetitive forward surge current (IFSM), and maintains clamping performance across –55 °C to +150 °C operating junction temperature. Its matte tin-plated leads comply with J-STD-002 and JESD 22-B102 solderability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 85 V - maximum continuous reverse working voltage before clamping begins |
| VBR min/max | 94.4 V / 104 V at IT = 1 mA - defines reliable avalanche onset window under standardized test conditions |
| VC @ IPPM | 137 V at 4.4 A - clamping voltage during 10/1000 µs transient, limiting stress on downstream components |
| PPPM | 600 W - peak transient power handling capacity, critical for IEC 61000-4-5 surge immunity design |
| ID @ VWM | 1.0 µA - ultra-low reverse leakage ensures minimal standby power loss in high-impedance circuits |
| TJ max. | +150 °C - enables operation in under-hood automotive and industrial environments without derating |
| RθJA | 100 °C/W - thermal resistance from junction to ambient on standard 0.2" × 0.2" copper pads |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads. Cathode indicated by band marking on body. Complies with MSL level 1 (J-STD-020), LF peak 260 °C.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / reverse voltage reference | Connected to lower-potential side of protected line; determines unidirectional conduction path |
| Cathode | Avalanche conduction terminal / clamping node | Banded end; ties to higher-potential rail or signal line to be protected against overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JEDEC standards |
| 600 W peak pulse power | Withstands IEC 61000-4-5 Level 4 (4 kV) surge events on 50 Ω source impedance without degradation |
| Low clamping ratio (VC/VBR ≈ 1.35) | Minimizes overvoltage overshoot during fast transients, reducing risk of latch-up or gate oxide damage |
| UL 497B recognized | Approved for use in telecom and industrial surge protection modules requiring third-party safety certification |
| MSL level 1 moisture sensitivity | Zero bake requirement prior to reflow; compatible with standard SMT assembly processes up to 260 °C peak |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
Use Scenario: Protection of gate drivers and microcontroller I/O against inductive kickback from relay coils and solenoid loads. IC Role / Device Role / Timing Role: Unidirectional TVS placed between MCU GPIO and external load interface to clamp negative transients below absolute maximum ratings. Use Value: Prevents latch-up and permanent damage to 3.3 V or 5 V logic inputs during 100 V+ switching spikes, enabling robust field deployment. |
Use Scenario: Surge suppression on LIN bus lines and sensor supply rails exposed to battery dump and load-dump events. IC Role / Device Role / Timing Role: Standoff-rated TVS connected between VBAT and GND to absorb 12 V system transients up to ±100 V per ISO 7637-2 Pulse 5a. Use Value: Maintains <1 µA leakage at 13.5 V nominal, preserving sleep-mode current budget while meeting AEC-Q101 automotive qualification. |
| Telecom Power Supply Inputs | Consumer Appliance Control Boards |
Use Scenario: Input-stage protection for AC/DC adapters and PoE-powered devices subjected to lightning-induced surges. IC Role / Device Role / Timing Role: Primary-side TVS mounted across bulk capacitor input to limit differential-mode transients before regulation stage. Use Value: Clamps 1 kV/0.5 J surge to ≤137 V within 1 ns, preventing overvoltage failure of primary-side controllers and optocouplers. |
Use Scenario: ESD and EFT protection for touch panel interfaces and appliance display backlight drivers. IC Role / Device Role / Timing Role: Low-capacitance TVS placed inline with I²C or UART lines to suppress 8 kV contact / 15 kV air discharge per IEC 61000-4-2. Use Value: Delivers sub-nanosecond response with <1 pF junction capacitance (typ.) at zero bias, avoiding signal integrity degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ85AHM3/5B | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification | No functional difference; selected where halogen-free material compliance is mandated by OEM or regional regulations | Choose when environmental compliance requires absence of brominated flame retardants in molding compound |
| SMBJ85A-E3/5B | Commercial-grade (non-AEC-Q101) version with same VWM, VBR, VC, and PPPM ratings | Lacks automotive qualification testing; suitable for industrial or consumer applications without automotive reliability requirements | Prefer for cost-sensitive designs where AEC-Q101 is not required and full automotive qualification adds unnecessary overhead |
Compared with SMBJ85AHE3/5B, the HM3 variant offers identical protection performance with halogen-free construction, while the E3 variant removes AEC-Q101 validation to reduce cost - enabling precise alignment with application-specific reliability, regulatory, and budget constraints.
Availability
SMBJ85AHE3/5B is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, and telecom power supply inputs requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SMBJ85AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series delivers standardized 600 W transient suppression in compact SMB packages, engineered for high-volume automated assembly and mission-critical protection in automotive, industrial, and telecom infrastructure systems.
FAQ
What is the clamping voltage of SMBJ85AHE3/5B at its rated peak pulse current?
The SMBJ85AHE3/5B has a maximum clamping voltage (VC) of 137 V at 4.4 A peak pulse current (IPPM) under 10/1000 µs waveform conditions. This value represents the upper voltage limit imposed on protected circuitry during surge events, ensuring downstream components remain within safe operating limits. The SMBJ85AHE3/5B achieves this clamping performance while maintaining low leakage and fast response time.
Is SMBJ85AHE3/5B qualified for automotive applications?
Yes, SMBJ85AHE3/5B is AEC-Q101 qualified, meaning it has passed stress tests including high-temperature reverse bias, temperature cycling, and ESD per JEDEC standards for automotive-grade discrete semiconductors. This qualification confirms suitability for under-hood and body electronics where reliability across –40 °C to +125 °C ambient is required. The SMBJ85AHE3/5B meets these requirements without derating.
What is the standoff voltage rating of SMBJ85AHE3/5B and how does it relate to system design?
The SMBJ85AHE3/5B has a reverse stand-off voltage (VWM) of 85 V, indicating the maximum continuous DC or RMS voltage it can block without entering avalanche conduction. In system design, this value must exceed the normal operating voltage of the protected line - for example, selecting SMBJ85AHE3/5B for a 72 V battery system provides 13 V margin above nominal, ensuring stable operation during load-dump transients. The SMBJ85AHE3/5B's VWM is tightly specified to avoid false triggering.
Does SMBJ85AHE3/5B have UL recognition and what does that mean for end-equipment certification?
Yes, SMBJ85AHE3/5B carries Underwriters Laboratories recognition under UL 497B for surge protective devices, with file number E136766. This means the device has been evaluated for safety in telecom and industrial applications involving transient overvoltages, supporting faster end-equipment certification by eliminating need for redundant component-level testing. UL recognition applies to both unidirectional and bidirectional variants of the SMBJ family, including SMBJ85AHE3/5B.
What package type and mounting specifications apply to SMBJ85AHE3/5B?
SMBJ85AHE3/5B uses the SMB (DO-214AA) surface-mount package with dimensions of 4.57 mm × 3.94 mm × 2.20 mm and matte tin-plated leads compliant with J-STD-002 solderability. It is rated MSL level 1, allowing direct placement into reflow ovens with peak temperatures up to 260 °C. Recommended pad layout is 5.0 mm × 5.0 mm copper per terminal, which establishes the thermal resistance (RθJA = 100 °C/W) cited in the SMBJ85AHE3/5B datasheet.
SMBJ85AHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 85V
- Voltage - Breakdown (Min):
- 94.4V
- Voltage - Clamping (Max) @ Ipp:
- 137V
- Current - Peak Pulse (10/1000µs):
- 4.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ85AHE3/5B FAQ
1.How can I place an order for SMBJ85AHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ85AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ85AHE3/5B reliable?
The price and inventory of SMBJ85AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ85AHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ85AHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ85AHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ85AHE3/5B?
SMBJ85AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ85AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ85AHE3/5B?
For technical support, including SMBJ85AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ85AHE3/5B requirements.
6.How does Aetrix verify that SMBJ85AHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ85AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ85AHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ85AHE3/5B?
All SMBJ85AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ85AHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ85AHE3/5B part is unused and in its original packaging.
Return procedure for SMBJ85AHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ85AHE3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)