My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ85AHE3_A/H
;;2.jpg)
- Part No.:
- SMBJ85AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ85AHE3_A/H.pdf
- Description:
- TVS DIODE 85VWM 137VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:7,860
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ85AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed to protect sensitive electronics against voltage transients induced by inductive load switching and lightning surges. It features a 85 V stand-off voltage (VWM), 94.4–104 V breakdown voltage (VBR) at 1 mA, 137 V maximum clamping voltage (VC) at 4.4 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform).
For engineers reviewing the SMBJ85AHE3_A/H datasheet, SMBJ85AHE3_A/H pinout, SMBJ85AHE3_A/H application, or SMBJ85AHE3_A/H equivalent, this device is selected for robust overvoltage protection in automotive-grade power rails, industrial sensor interfaces, and telecom DC supply lines where AEC-Q101 qualification, low clamping ratio, and MSL Level 1 solderability are required.
Technical Context
This TVS diode operates as a unidirectional avalanche clamp with cathode-banded polarity. Its junction structure uses glass-passivated silicon for stable breakdown behavior and low incremental surge resistance. The device responds in <1 ps to transient events and maintains clamping performance across -55 °C to +150 °C operating junction temperature.
It is rated for 600 W peak pulse power under standardized 10/1000 µs waveform, with thermal resistance of 100 °C/W (junction-to-ambient) and 20 °C/W (junction-to-lead). The 1.0 µA max reverse leakage at VWM ensures minimal standby power loss in high-impedance protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 85 V - Maximum continuous reverse working voltage before clamping initiates; defines safe operating margin for 72–96 V DC systems. |
| VBR min/max | 94.4 V / 104 V at 1 mA - Confirmed breakdown range ensures predictable turn-on threshold with ±5% tolerance. |
| VC @ IPPM | 137 V at 4.4 A - Clamping voltage limits downstream voltage stress during 600 W transient events. |
| PPPM | 600 W (10/1000 µs) - Peak surge energy handling capability validated per ANSI/IEEE C62.35 standards. |
| ID @ VWM | 1.0 µA max - Ultra-low leakage preserves signal integrity and battery life in always-on circuits. |
| TJ max | +150 °C - Enables use in under-hood automotive environments and thermally constrained industrial enclosures. |
| Package | SMB (DO-214AA) - Surface-mount footprint (5.21 mm × 4.57 mm) compatible with automated placement and reflow. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, MSL Level 1 (260 °C peak reflow), RoHS-compliant and AEC-Q101 qualified. Cathode identified by black band on body end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current return path | Connected to system ground or low-impedance reference plane; carries full surge current during clamping. |
| Cathode | Protected line connection | Connected to the line being protected (e.g., 85 V rail); voltage clamps relative to anode when VAK exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control units and ADAS power supplies. |
| 600 W peak pulse power | Withstands IEC 61000-4-5 surge test levels up to 4 kV (line-to-earth) without degradation. |
| Glass-passivated junction | Ensures long-term stability of VBR and low parameter drift over temperature and lifetime. |
| Low clamping ratio (VC/VBR ≈ 1.37) | Minimizes overvoltage overshoot during fast transients, protecting downstream MOSFETs and ICs. |
| MSL Level 1 rating | Enables single-reflow assembly without moisture sensitivity concerns or baking requirements. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V/24 V/48 V battery-fed ECUs and infotainment modules from load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power input and ground to clamp positive-going transients only. Use Value: Withstands 600 W surges while limiting clamped voltage to 137 V, preventing damage to 100 V-rated DC-DC converters and microcontrollers. |
Use Scenario: Shielding analog and digital signal lines (e.g., RS-485, CAN, 4–20 mA loops) in factory automation sensors. IC Role / Device Role / Timing Role: Standoff protection element placed across differential pair or line-to-ground to absorb ESD and EFT bursts. Use Value: 1.0 µA leakage at 85 V ensures no measurable offset error in precision current-loop receivers. |
| Telecom DC Power Input Protection | Renewable Energy Controller Protection |
Use Scenario: Safeguarding PoE-powered equipment and base station DC inputs against lightning-induced surges on outdoor cabling. IC Role / Device Role / Timing Role: Primary-level TVS on main 48 V or 57 V supply rail upstream of DC-DC regulation. Use Value: 137 V clamping voltage provides >10 V margin below typical 150 V input stage ratings of telecom rectifiers. |
Use Scenario: Protecting solar charge controller inputs exposed to grid-switching transients and lightning coupling via PV string wiring. IC Role / Device Role / Timing Role: Unidirectional clamp on MPPT input rail to suppress positive spikes from inductive disconnects. Use Value: AEC-Q101 qualification supports extended field life in harsh outdoor environments with wide thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ85AHM3_A/H | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. | No functional difference; selected when halogen-free material compliance is mandated by OEM or regional regulations. | Direct substitution where halogen-free bill-of-materials is required; same footprint, thermal, and electrical behavior. |
| SMBJ85A-E3/52 | Commercial-grade (non-AEC-Q101), same VWM/VBR/VC/PPPM, but rated only for industrial temperature range (-55 °C to +150 °C) without automotive qualification. | Lacks automotive reliability validation; not suitable for safety-critical vehicle subsystems. | Cost-optimized alternative for non-automotive applications where AEC-Q101 is not required. |
Compared with SMBJ85AHE3_A/H, SMBJ85AHM3_A/H offers identical performance with halogen-free construction, while SMBJ85A-E3/52 provides equivalent surge protection without automotive qualification-enabling trade-offs between regulatory compliance, reliability assurance, and cost.
Availability
SMBJ85AHE3_A/H is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor systems, and telecom infrastructure requiring stable component supply with AEC-Q101 traceability, high-reliability surge immunity, and consistent MSL Level 1 manufacturability.
Supply support for SMBJ85AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on high-reliability, automotive-qualified components.
The SMBJ series was developed specifically for robust transient suppression in demanding environments-combining high-power surge handling, tight parametric tolerances, and automotive-grade process controls for mission-critical power and signal line protection.
FAQ
What is the clamping voltage of SMBJ85AHE3_A/H at its rated peak pulse current?
The SMBJ85AHE3_A/H has a maximum clamping voltage (VC) of 137 V at its specified peak pulse current (IPPM) of 4.4 A, measured using the standard 10/1000 µs waveform. This value is guaranteed across the full operating temperature range and confirms the device's ability to limit transient overvoltage to a safe level for downstream 100 V-rated components. The SMBJ85AHE3_A/H datasheet specifies this parameter under conditions defined in Figure 1 and Table 1 of Vishay document 88392.
Is SMBJ85AHE3_A/H suitable for automotive applications?
Yes, SMBJ85AHE3_A/H is AEC-Q101 qualified and explicitly designated for automotive use with ordering code suffix "HE3". It meets stress test requirements for temperature cycling, humidity bias, mechanical shock, and surge endurance relevant to engine control, body electronics, and ADAS subsystems. The SMBJ85AHE3_A/H also complies with MSL Level 1 and features matte tin-plated leads qualified per J-STD-002 and JESD 22-B102.
What does the "HE3" suffix indicate in SMBJ85AHE3_A/H?
The "HE3" suffix in SMBJ85AHE3_A/H denotes RoHS-compliant construction with AEC-Q101 qualification. "H" identifies the AEC-Q101 grade, "E3" indicates RoHS-compliant (lead-free) matte tin plating and commercial-grade molding compound. The "_A/H" revision code reflects the specific manufacturing lot and tape-and-reel packaging configuration (7" reel, 750 units). This distinguishes it from non-automotive variants like SMBJ85A-E3/52.
How does SMBJ85AHE3_A/H differ from bidirectional TVS diodes like SMBJ85CA?
SMBJ85AHE3_A/H is unidirectional and protects against positive transients only (cathode-to-anode conduction), whereas SMBJ85CA is bidirectional and clamps both polarities. The SMBJ85AHE3_A/H exhibits lower leakage (<1.0 µA at 85 V) and higher forward surge capability (100 A IFSM), making it optimal for DC power rail protection. SMBJ85CA would be used where AC signals or dual-polarity transients require symmetrical clamping.
What is the thermal resistance of SMBJ85AHE3_A/H, and how does it affect PCB layout?
The SMBJ85AHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead resistance (RθJL) of 20 °C/W. To maintain safe operation under repeated surges, PCB layout must provide minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal as specified in Vishay's mounting recommendations. Insufficient copper area will cause thermal derating and reduce effective PPPM capability below 600 W.
SMBJ85AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 85V
- Voltage - Breakdown (Min):
- 94.4V
- Voltage - Clamping (Max) @ Ipp:
- 137V
- Current - Peak Pulse (10/1000µs):
- 4.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ85AHE3_A/H FAQ
1.How can I place an order for SMBJ85AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ85AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ85AHE3_A/H reliable?
The price and inventory of SMBJ85AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ85AHE3_A/H is usually 5 days.
3.What payment methods are accepted for SMBJ85AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ85AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ85AHE3_A/H?
SMBJ85AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ85AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ85AHE3_A/H?
For technical support, including SMBJ85AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ85AHE3_A/H requirements.
6.How does Aetrix verify that SMBJ85AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All SMBJ85AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ85AHE3_A/H meets industry standards.
7.What is the process for return or replacement of SMBJ85AHE3_A/H?
All SMBJ85AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ85AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ85AHE3_A/H part is unused and in its original packaging.
Return procedure for SMBJ85AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ85AHE3_A/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
