My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ8.5AHE3_B/H
- Part No.:
- SMBJ8.5AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.5AHE3_B/H.pdf
- Description:
- 600W,8.5V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,215
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ8.5AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed to protect sensitive electronics against voltage transients induced by inductive load switching and lightning surges. It features a 8.5 V stand-off voltage (VWM), 9.44–10.4 V breakdown voltage (VBR) at 1 mA, 14.4 V maximum clamping voltage (VC) at 41.7 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform.
For engineers reviewing the SMBJ8.5AHE3_B/H datasheet, SMBJ8.5AHE3_B/H pinout, SMBJ8.5AHE3_B/H application, or SMBJ8.5AHE3_B/H equivalent, key selection criteria include clamping performance under 41.7 A surge, thermal resistance (RθJA = 100 °C/W), AEC-Q101 qualification status, unidirectional polarity marking, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a fast-acting shunt protector that clamps transient overvoltages above its breakdown threshold while maintaining low leakage (<1.0 µA at 8.5 V) during normal operation. Its glass-passivated junction ensures stable avalanche characteristics and repeatable surge handling across temperature.
The device is rated for 150 °C maximum junction temperature and exhibits a positive temperature coefficient of VBR (+0.073 %/°C), enabling predictable voltage drift under thermal stress. It meets J-STD-020 MSL Level 1 and is qualified to AEC-Q101 for automotive applications when ordered with HE3 suffix.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.5 V - Maximum continuous reverse operating voltage before significant leakage begins |
| VBR (min/max) | 9.44 V / 10.4 V at 1 mA - Ensures reliable turn-on within defined tolerance band for consistent protection triggering |
| VC @ IPPM | 14.4 V at 41.7 A - Clamped voltage seen by protected circuit during worst-case 600 W transient event |
| IPPM | 41.7 A - Peak surge current capability with 10/1000 µs waveform, defining protection margin against common ESD/lightning pulses |
| PPPM | 600 W - Transient energy absorption capacity per single pulse, derated above 25 °C per Fig. 2 |
| RθJA | 100 °C/W - Thermal resistance from junction to ambient on standard 0.2" × 0.2" copper pad, critical for thermal design margin |
| TJ max | 150 °C - Maximum allowable junction temperature, supporting operation in under-hood automotive environments |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, molded plastic case with matte tin-plated leads; cathode indicated by band on one end; compliant with UL 94 V-0 flammability rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to ground or lower-potential rail in unidirectional configuration; enables forward-biased clamping during negative transients |
| Cathode | Reverse conduction terminal | Marked with band; connected to protected line; conducts avalanche current during positive overvoltage events |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock testing |
| 600 W peak pulse power | Supports robust protection against IEC 61000-4-5 Level 4 (4 kV surge) when properly mounted on 5.0 mm × 5.0 mm copper pads |
| Fast response time | Sub-nanosecond clamping onset ensures protection of high-speed ICs and MOSFET gate drivers before damage occurs |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, improving protection fidelity for 3.3 V and 5 V logic interfaces |
| MSL Level 1 | Allows unlimited floor life and reflow soldering at peak temperature up to 260 °C without preconditioning |
Applications
| Automotive Power Supply Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator transients. IC Role / Device Role / Timing Role: Unidirectional shunt clamp placed between power rail and ground, triggered only during positive overvoltage events. Use Value: Limits voltage to ≤14.4 V during 41.7 A surge, preventing damage to downstream LDOs and microcontrollers rated for 16 V absolute maximum. | Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) in factory automation systems exposed to relay-induced spikes. IC Role / Device Role / Timing Role: Line-to-ground TVS on signal traces, absorbing inductive kickback from nearby solenoid drivers. Use Value: Clamps transients within 1 ns while adding <10 pF capacitance, preserving signal integrity for 10 kHz bandwidth sensor signals. |
| Consumer USB Port ESD Protection | Telecom DC Power Input Protection |
Use Scenario: Secondary-level protection on USB VBUS line after primary polymer PTC, guarding against repeated ESD strikes. IC Role / Device Role / Timing Role: Standoff-clamp device operating at 5 V nominal, activated only above 8.5 V to avoid interference with normal USB 2.0 signaling. Use Value: Withstands >10000 contact ESD events per IEC 61000-4-2 without parameter shift, due to glass-passivated junction stability. | Use Scenario: Front-end surge suppression on -48 V telecom power feeds susceptible to lightning-induced surges on outdoor lines. IC Role / Device Role / Timing Role: Unidirectional TVS referenced to system ground, conducting only during positive excursions relative to return path. Use Value: Delivers 600 W pulse handling with 14.4 V clamping-compatible with upstream DC-DC converters having 15 V input overvoltage tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.5A-E3/52 | Same electrical specs and SMB package; RoHS-compliant commercial grade without AEC-Q101 qualification | Not validated for automotive temperature cycling or lifetime reliability testing; suitable for industrial/commercial use only | Select when AEC-Q101 is not required and cost sensitivity favors standard commercial variant |
| SAC8.5 | Same VWM and VC, but in smaller SOD-123 package (lower IPPM = 25 A, PPPM = 400 W) | Limited to lower-energy transients; insufficient for IEC 61000-4-5 Level 3+ requirements | Choose only for space-constrained consumer designs where 400 W surge margin is acceptable |
Compared with SMBJ8.5A-E3/52, SMBJ8.5AHE3_B/H adds automotive qualification and extended reliability validation; compared with SAC8.5, it delivers 50 % higher surge current capacity and full 600 W rating in a slightly larger but more thermally robust SMB package.
Availability
SMBJ8.5AHE3_B/H is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, consumer USB power rails, and telecom DC input stages requiring stable component supply with AEC-Q101 assurance and long-term production continuity.
Supply support for SMBJ8.5AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in harsh environments, targeting automotive, industrial, and telecom applications where robustness against repetitive surges and long-term parametric stability are mandatory.
FAQ
What is the clamping voltage of SMBJ8.5AHE3_B/H at its rated peak pulse current?
The SMBJ8.5AHE3_B/H has a maximum clamping voltage (VC) of 14.4 V at its rated peak pulse current (IPPM) of 41.7 A, measured using the standardized 10/1000 µs double-exponential waveform. This value defines the upper voltage limit imposed on the protected circuit during worst-case transient events and is confirmed in the Electrical Characteristics table of Vishay document 88392.
Is SMBJ8.5AHE3_B/H suitable for automotive applications?
Yes, SMBJ8.5AHE3_B/H is AEC-Q101 qualified, as indicated by the "HE3" suffix in its ordering code. This certification validates its performance across temperature cycling, humidity bias, mechanical shock, and lifetime reliability tests required for under-hood and chassis-mounted automotive electronics. The device operates from –55 °C to +150 °C and maintains stable VBR and VC parameters throughout this range.
What does the "_B/H" suffix mean in SMBJ8.5AHE3_B/H?
The "_B/H" suffix in SMBJ8.5AHE3_B/H denotes packaging configuration: "B" indicates tape-and-reel packaging per EIA-481 standards, and "H" specifies a 7-inch diameter reel containing 750 units. This format supports automated SMT placement and is documented in the Ordering Information section of Vishay's SMBJ5.0A–SMBJ188A datasheet (document 88392).
How does SMBJ8.5AHE3_B/H differ from bidirectional variants like SMBJ8.5CA?
SMBJ8.5AHE3_B/H is unidirectional, with polarity marked by a cathode band and intended for DC line-to-ground protection. In contrast, SMBJ8.5CA is bidirectional, lacks polarity marking, and protects AC or dual-polarity signals. Their VWM and VC values differ: SMBJ8.5CA has VWM = 8.5 V but symmetrical clamping in both directions, whereas SMBJ8.5AHE3_B/H clamps only on the cathode-side overvoltage.
What is the thermal resistance of SMBJ8.5AHE3_B/H, and how does it affect layout?
SMBJ8.5AHE3_B/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain safe junction temperatures during repetitive surges, PCB layout must provide adequate copper area and avoid excessive trace length or isolation-especially critical in automotive applications where ambient temperatures exceed 85 °C.
SMBJ8.5AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.44V
- Voltage - Clamping (Max) @ Ipp:
- 14.4V
- Current - Peak Pulse (10/1000µs):
- 41.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ8.5AHE3_B/H FAQ
1.How can I place an order for SMBJ8.5AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.5AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.5AHE3_B/H reliable?
The price and inventory of SMBJ8.5AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.5AHE3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ8.5AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.5AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.5AHE3_B/H?
SMBJ8.5AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.5AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.5AHE3_B/H?
For technical support, including SMBJ8.5AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.5AHE3_B/H requirements.
6.How does Aetrix verify that SMBJ8.5AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ8.5AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.5AHE3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ8.5AHE3_B/H?
All SMBJ8.5AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.5AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.5AHE3_B/H part is unused and in its original packaging.
Return procedure for SMBJ8.5AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.5AHE3_B/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
