Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMBJ85AHE3_B/I

Part No.:
SMBJ85AHE3_B/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixSMBJ85AHE3_B/I.pdf
Description:
600W,85V 5%,UNIDIR,SMB TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,177

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMBJ85AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 85 V stand-off voltage (VWM), 94.4–104 V breakdown voltage (VBR) at 1 mA, 137 V maximum clamping voltage (VC) at 4.4 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform), commonly deployed on DC power rails and I/O lines in industrial motor drives.

For engineers reviewing the SMBJ85AHE3_B/I datasheet, SMBJ85AHE3_B/I pinout, SMBJ85AHE3_B/I application, or SMBJ85AHE3_B/I equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (−55 to +150 °C), and real-world use context for surge protection design validation.

Technical Context

This unidirectional TVS diode operates as a voltage-clamping device triggered by transient overvoltages exceeding its reverse stand-off voltage (VWM = 85 V). Its silicon avalanche structure provides sub-nanosecond response time and low incremental surge resistance, enabling effective suppression of ESD, lightning-induced surges, and inductive switching spikes.

The SMBJ85AHE3_B/I is rated for 600 W peak pulse power (10/1000 µs), with clamping performance validated at 137 V under 4.4 A IPPM. It supports continuous power dissipation of 5.0 W at TA = 50 °C and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak temperature tolerance.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 85 V - Maximum continuous reverse operating voltage before clamping initiates; defines safe DC rail operating margin.
VBR (min/max) 94.4 V / 104 V at IT = 1 mA - Breakdown threshold range; ensures reliable turn-on above normal operating voltage with process variation allowance.
VC @ IPPM 137 V at 4.4 A - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected downstream circuitry.
PPPM 600 W - Peak transient energy handling capability; enables protection against IEC 61000-4-5 Level 3/4 surges on 24–48 V systems.
RθJA 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; guides PCB thermal pad sizing for sustained power handling.
TJ max. +150 °C - Maximum junction temperature; supports operation in under-hood automotive and high-ambient industrial environments.
AEC-Q101 Qualified - Validated for automotive-grade reliability including HTOL, TC, UHAST, and ESD testing; suitable for ADAS power modules and body control units.

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking on unidirectional devices.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to lower-potential side (e.g., GND or return path); defines polarity for unidirectional clamping action.
Cathode Reverse-biased clamping terminal Connected to protected line (e.g., 24 V supply rail); avalanche conduction occurs when voltage exceeds VBR relative to anode.

Key Features

Feature Design Value
600 W peak pulse power (10/1000 µs) Enables single-device protection against severe transients per ISO 7637-2 Pulse 1/2b and IEC 61000-4-5 2 Ω/12 Ω coupling networks.
AEC-Q101 qualified Validated for automotive applications requiring long-term reliability under thermal cycling, humidity, and vibration stress.
MSL Level 1 (260 °C peak) Supports standard lead-free reflow assembly without moisture sensitivity concerns or baking requirements.
Low clamping ratio (VC/VBR ≈ 1.39) Minimizes overvoltage overshoot during surge events, reducing risk of latch-up or gate oxide damage in protected MOSFETs and ICs.
Glass passivated junction Improves long-term stability and leakage performance across temperature and humidity, critical for industrial field-deployed equipment.

Applications

Industrial Motor Drives Automotive Body Control Modules

Use Scenario: Protection of 24 V DC bus against inductive kickback from solenoid valves and relay coils in factory automation PLC outputs.

IC Role / Device Role / Timing Role: Unidirectional voltage clamp placed between power rail and ground, activated within <1 ns upon overvoltage detection.

Use Value: Limits transient voltage to ≤137 V, preventing damage to microcontroller I/O pins and gate drivers while maintaining system uptime.

Use Scenario: Surge suppression on LIN bus power input and window lift motor control lines in passenger vehicles.

IC Role / Device Role / Timing Role: Standoff-rated TVS connected across supply and chassis ground, absorbing load dump and jump-start transients.

Use Value: Withstands 100 A surge (IFSM) and meets AEC-Q101, ensuring compliance with OEM EMC and durability requirements.

Telecom Power Supplies Medical Diagnostic Equipment

Use Scenario: Input-stage protection of 48 V telecom rectifiers exposed to lightning-induced surges on outdoor cabling.

IC Role / Device Role / Timing Role: Primary-level TVS on DC input, coordinated with upstream MOVs and downstream filtering.

Use Value: 600 W rating and 137 V clamping enable coordination with secondary protection to meet IEC 61000-4-5 Ed. 3 Class 4 immunity.

Use Scenario: Protection of analog sensor front-ends (e.g., pressure, temperature) in portable ultrasound and imaging devices.

IC Role / Device Role / Timing Role: Low-leakage (<1 µA at 85 V) unidirectional clamp on signal conditioning rails to preserve measurement accuracy.

Use Value: Maintains <1 µA reverse leakage at VWM, avoiding DC offset errors in precision amplifiers and ADC reference paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ85AHM3_B/I Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification. No functional difference; selected where halogen-free material compliance is mandated by end-equipment environmental policy. Choose SMBJ85AHM3_B/I when halogen-free bill-of-materials is required; otherwise SMBJ85AHE3_B/I offers standard RoHS compliance.
SMCJ85AHE3_A/H Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package with higher RθJA (60 °C/W) and 1500 W PPPM rating. Used where higher surge energy handling or improved thermal dissipation is needed, e.g., in high-power inverters or outdoor infrastructure. Choose SMCJ85AHE3_A/H only if 1500 W surge capacity or lower thermal resistance is required; SMBJ85AHE3_B/I fits tighter board space constraints.

Compared with SMBJ85AHM3_B/I, the SMBJ85AHE3_B/I differs only in halogen content-no electrical or mechanical trade-offs. Against SMCJ85AHE3_A/H, it trades 900 W peak power and 40 °C/W better thermal resistance for 30% smaller footprint and lower cost in space-constrained designs.

Availability

SMBJ85AHE3_B/I is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, telecom power supplies, and medical diagnostic equipment requiring stable component supply and AEC-Q101 assurance.

Supply support for SMBJ85AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The SMBJ series is engineered for high-energy transient suppression in compact surface-mount formats, targeting automotive, industrial, and telecom systems where space, surge robustness, and qualification compliance are critical.

FAQ

What is the maximum clamping voltage of SMBJ85AHE3_B/I under a 10/1000 µs surge?

The SMBJ85AHE3_B/I has a maximum clamping voltage (VC) of 137 V when subjected to its rated peak pulse current of 4.4 A using the standardized 10/1000 µs waveform. This value is measured per Figure 1 and Table 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during transient events. The SMBJ85AHE3_B/I maintains this clamping performance across its qualified operating temperature range.

Is SMBJ85AHE3_B/I qualified for automotive applications?

Yes, SMBJ85AHE3_B/I is AEC-Q101 qualified, as confirmed in the "Ordering Information" section (page 3) and "Notes" (page 2) of Vishay document 88392. This qualification covers stress tests including high-temperature operating life, temperature cycling, unbiased highly accelerated stress test, and ESD. The SMBJ85AHE3_B/I is approved for use in automotive subsystems such as body control modules and power distribution units where reliability under harsh conditions is mandatory.

What does the "HE3" suffix indicate in SMBJ85AHE3_B/I?

The "HE3" suffix in SMBJ85AHE3_B/I denotes a RoHS-compliant, AEC-Q101 qualified version with commercial-grade reliability and standard tin plating. Per Vishay's ordering guide (page 3), "HE3" identifies parts meeting both RoHS Directive 2011/65/EU and AEC-Q101 stress test requirements. The "B/I" portion specifies packaging: "B" indicates tape-and-reel format with 13-inch reel diameter, and "I" denotes a 3200-unit base quantity. The SMBJ85AHE3_B/I thus combines automotive qualification with high-volume automated assembly readiness.

How does SMBJ85AHE3_B/I differ from bidirectional variants like SMBJ85CA?

SMBJ85AHE3_B/I is unidirectional, featuring a cathode band and conducting only in forward bias-ideal for DC rail protection where polarity is fixed. In contrast, SMBJ85CA is bidirectional, symmetrical in both directions, suited for AC lines or data buses like RS-485. Electrically, SMBJ85AHE3_B/I has a forward voltage drop (VF ≤ 3.5 V at 50 A), while SMBJ85CA lacks VF specification. The SMBJ85AHE3_B/I also supports higher IFSM (100 A) due to its unidirectional construction, unlike bidirectional types which omit IFSM ratings.

What is the thermal resistance and recommended PCB layout for SMBJ85AHE3_B/I?

The SMBJ85AHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as specified in the Thermal Characteristics table (page 3). To achieve this rating, the PCB must use minimum recommended pad layout per Figure "Mounting Pad Layout" (page 5), with adequate copper area and no thermal relief on thermal pads. Exceeding 5.0 W continuous power dissipation requires derating above TA = 50 °C per Figure 2, and the SMBJ85AHE3_B/I must remain within −55 to +150 °C junction temperature limits.

SMBJ85AHE3_B/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
85V
Voltage - Breakdown (Min):
94.4V
Voltage - Clamping (Max) @ Ipp:
137V
Current - Peak Pulse (10/1000µs):
4.4A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

SMBJ85AHE3_B/I FAQ

1.How can I place an order for SMBJ85AHE3_B/I through Aetrix?

Please submit a Request for Quotation (RFQ) for SMBJ85AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMBJ85AHE3_B/I reliable?

The price and inventory of SMBJ85AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ85AHE3_B/I is usually 5 days.

3.What payment methods are accepted for SMBJ85AHE3_B/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ85AHE3_B/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMBJ85AHE3_B/I?

SMBJ85AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMBJ85AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMBJ85AHE3_B/I?

For technical support, including SMBJ85AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ85AHE3_B/I requirements.

6.How does Aetrix verify that SMBJ85AHE3_B/I is sourced from the original manufacturer or authorized distributors?

All SMBJ85AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ85AHE3_B/I meets industry standards.

7.What is the process for return or replacement of SMBJ85AHE3_B/I?

All SMBJ85AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ85AHE3_B/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMBJ85AHE3_B/I part is unused and in its original packaging.

Return procedure for SMBJ85AHE3_B/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMBJ85AHE3_B/I Tags

  • SMBJ85AHE3_B/I
  • SMBJ85AHE3_B/I PDF
  • SMBJ85AHE3_B/I Datasheet
  • SMBJ85AHE3_B/I Specifications
  • SMBJ85AHE3_B/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMBJ85AHE3_B/I
  • Buy SMBJ85AHE3_B/I
  • SMBJ85AHE3_B/I Price
  • SMBJ85AHE3_B/I Distributor
  • SMBJ85AHE3_B/I Supplier
  • SMBJ85AHE3_B/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER