Vishay General Semiconductor - Diodes Division SMBJ8.5AHE3_B/I
- Part No.:
- SMBJ8.5AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.5AHE3_B/I.pdf
- Description:
- 600W,8.5V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ8.5AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 8.5 V stand-off voltage (VWM), 9.44–10.4 V breakdown voltage (VBR) at 1 mA, 14.4 V maximum clamping voltage (VC) at 41.7 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 μs waveform), used to protect MOSFETs and ICs in industrial sensor interfaces.
For engineers reviewing the SMBJ8.5AHE3_B/I datasheet, SMBJ8.5AHE3_B/I pinout, SMBJ8.5AHE3_B/I application, or SMBJ8.5AHE3_B/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and compliance with UL 497B surge protector classification.
Technical Context
This TVS diode operates as a voltage-clamping protection device in series with sensitive downstream circuitry, conducting only when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable avalanche characteristics, while low incremental surge resistance enables rapid energy absorption during ESD or inductive switching events.
The SMBJ8.5AHE3_B/I is rated for 600 W peak pulse power under 10/1000 μs waveform with 0.01% duty cycle, and supports repetitive surge handling when thermally managed via PCB copper pads (0.2" × 0.2"). Its 1.0 μA max reverse leakage at VWM ensures minimal standby power loss in low-current applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.5 V - Maximum continuous reverse operating voltage before conduction begins; defines safe operating margin below breakdown. |
| VBR min/max | 9.44 V / 10.4 V at IT = 1 mA - Confirmed avalanche onset range; ensures predictable clamping initiation across production lots. |
| VC @ IPPM | 14.4 V at 41.7 A - Clamped voltage during worst-case 10/1000 μs surge; determines maximum stress imposed on protected ICs. |
| PPPM | 600 W - Peak transient energy absorption capability; validates suitability for IEC 61000-4-5 Level 3 (1 kV/2 Ω) surge testing. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard PCB pad layout; informs derating above TA = 25 °C per Fig. 2. |
| TJ max | +150 °C - Maximum allowable junction temperature; sets upper limit for sustained power dissipation and ambient operating range. |
| ID @ VWM | 1.0 μA - Reverse leakage current at rated stand-off voltage; critical for battery-powered or high-impedance sensor line protection. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, molded plastic case with matte tin-plated leads; meets UL 94 V-0 flammability rating and JESD 201 Class 2 whisker resistance. Cathode indicated by band marking on body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry (unidirectional) | Connected to lower-potential side of protected line; forms cathode-anode path for reverse-biased clamping operation. |
| Cathode | Reverse voltage reference terminal | Banded end; ties to higher-potential rail (e.g., VCC or signal line); conducts avalanche current when VAK > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness-enables use in ADAS sensor modules without requalification. |
| 600 W peak pulse power | Withstands 10/1000 μs surges up to 41.7 A without degradation-meets IEC 61000-4-5 surge immunity requirements for industrial control inputs. |
| Low clamping ratio (VC/VBR ≈ 1.44) | Minimizes overvoltage overshoot during transient events-reduces risk of latch-up or gate oxide damage in protected MOSFETs and microcontrollers. |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles-eliminates moisture sensitivity concerns and pre-bake steps in SMT assembly. |
| Glass passivated junction | Ensures stable VBR tolerance and long-term parameter stability under thermal stress-critical for field-deployed equipment with 10+ year lifetimes. |
Applications
| Industrial Sensor Interface | Automotive Body Control Module |
|---|---|
|
Use Scenario: Protecting analog output lines (e.g., 4–20 mA current loop) from load dump and inductive kickback in factory automation systems. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor output and PLC input to clamp transients before they reach precision ADC front-end. Use Value: Limits voltage excursion to ≤14.4 V during 41.7 A surge, preventing ADC saturation and maintaining measurement integrity under EMC stress. |
Use Scenario: Safeguarding LIN bus transceiver pins against battery reverse connection and jump-start spikes in door module ECUs. IC Role / Device Role / Timing Role: Standoff-rated TVS on LIN TX/RX lines, leveraging 8.5 V VWM to avoid interference with 12 V nominal bus signaling. Use Value: Clamps 100 V transients to 14.4 V within nanoseconds, preserving transceiver functionality without disrupting LIN protocol timing. |
| Power Supply Input Protection | Consumer Appliance Motor Driver |
|
Use Scenario: Secondary-side DC input protection for isolated SMPS supplying MCU and peripherals in medical diagnostic equipment. IC Role / Device Role / Timing Role: Primary transient shunt on 12 V rail upstream of LDO regulators, absorbing energy before it reaches voltage-sensitive logic. Use Value: Dissipates 600 W surge energy without failure, enabling compliance with IEC 60601-1 3rd ed. surge immunity requirements. |
Use Scenario: Gate drive line protection in BLDC motor inverters inside smart home vacuum cleaners. IC Role / Device Role / Timing Role: TVS on high-side gate driver output to suppress Miller-induced voltage spikes during MOSFET switching transitions. Use Value: Fast response (<1 ps) and low VC prevent false turn-on of power devices, reducing shoot-through risk and improving system reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.5A-E3/52 | Commercial-grade (non-AEC-Q101), same electrical specs and SMB package; RoHS-compliant but not automotive-qualified. | Lacks automotive qualification testing-suitable for industrial/commercial designs where AEC-Q101 is not mandated. | Select when cost sensitivity outweighs automotive reliability requirements and no vehicle integration is planned. |
| SAC8.5 | Same VWM and VC, but in smaller SOD-123FL package (lower IPPM = 25 A, PPPM = 400 W); not AEC-Q101 qualified. | Lower surge capacity limits use to low-energy signal lines (e.g., UART, I²C), not power rails or motor drivers. | Choose only for space-constrained signal-level protection where 600 W capability is unnecessary. |
Compared with SMBJ8.5AHE3_B/I, SMBJ8.5A-E3/52 offers identical clamping performance without automotive validation, while SAC8.5 trades surge robustness for footprint reduction-making SMBJ8.5AHE3_B/I the sole choice for AEC-Q101–mandated, high-energy industrial or automotive power-line protection.
Availability
SMBJ8.5AHE3_B/I is available at Aetrix Electronics and suitable for industrial sensor interface, automotive body control module, and power supply input protection requiring stable component supply and long-term lifecycle support.
Supply support for SMBJ8.5AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series was engineered for high-reliability transient suppression in harsh environments-including automotive, industrial, and telecom-where consistent clamping, thermal resilience, and qualification rigor are mandatory.
FAQ
What is the maximum clamping voltage of SMBJ8.5AHE3_B/I under a 10/1000 μs surge?
The SMBJ8.5AHE3_B/I has a maximum clamping voltage (VC) of 14.4 V when subjected to its rated peak pulse current of 41.7 A using the standardized 10/1000 μs waveform. This value is measured per Figure 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ8.5AHE3_B/I maintains this clamping performance across its qualified operating temperature range.
Is SMBJ8.5AHE3_B/I qualified to AEC-Q101 standards?
Yes, SMBJ8.5AHE3_B/I is explicitly AEC-Q101 qualified, as confirmed by the "HE3" suffix and footnote (1) in the Vishay datasheet (Document Number 88392, Revision 09-Jan-2024). This qualification covers stress tests including temperature cycling, high-temperature reverse bias (HTRB), and ESD robustness-making SMBJ8.5AHE3_B/I suitable for automotive applications such as body control modules and sensor units.
What does the "_B/I" suffix indicate in SMBJ8.5AHE3_B/I?
The "_B/I" suffix in SMBJ8.5AHE3_B/I denotes packaging configuration: "B" indicates tape-and-reel format per Vishay's internal revision coding, and "I" specifies a 13-inch diameter reel containing 3200 units. This matches the ordering information table on page 3 of document 88392, confirming SMBJ8.5AHE3_B/I is supplied in bulk production-ready packaging compatible with automated SMT placement equipment.
How does SMBJ8.5AHE3_B/I differ from bidirectional variants like SMBJ8.5CA?
SMBJ8.5AHE3_B/I is unidirectional, with polarity marked by a cathode band and intended for DC line protection where forward conduction must be blocked. In contrast, SMBJ8.5CA is bidirectional-lacking polarity marking-and provides symmetrical clamping for AC or floating signal lines. Electrical parameters (e.g., VWM, VC) differ: SMBJ8.5CA has VWM = 8.5 V but dual-directional VBR and VC, whereas SMBJ8.5AHE3_B/I only clamps in reverse bias and conducts forward current up to 100 A (IFSM).
What is the thermal resistance and recommended PCB layout for SMBJ8.5AHE3_B/I?
The SMBJ8.5AHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as specified in the Thermal Characteristics table (page 3 of document 88392). To maintain reliability under repetitive surges, designers must replicate this pad layout or add thermal vias to inner layers-failure to do so results in accelerated junction temperature rise and potential parametric shift or failure.
SMBJ8.5AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.44V
- Voltage - Clamping (Max) @ Ipp:
- 14.4V
- Current - Peak Pulse (10/1000µs):
- 41.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ8.5AHE3_B/I FAQ
1.How can I place an order for SMBJ8.5AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.5AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.5AHE3_B/I reliable?
The price and inventory of SMBJ8.5AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.5AHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ8.5AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.5AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.5AHE3_B/I?
SMBJ8.5AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.5AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.5AHE3_B/I?
For technical support, including SMBJ8.5AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.5AHE3_B/I requirements.
6.How does Aetrix verify that SMBJ8.5AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ8.5AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.5AHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ8.5AHE3_B/I?
All SMBJ8.5AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.5AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.5AHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ8.5AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.5AHE3_B/I Tags

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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