My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ8.5AHM3_B/H
- Part No.:
- SMBJ8.5AHM3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.5AHM3_B/H.pdf
- Description:
- 600W,8.5V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,732
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ8.5AHM3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 8.5 V stand-off voltage (VWM), 9.44–10.4 V breakdown voltage (VBR) at 1 mA, 14.4 V maximum clamping voltage (VC) at 41.7 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial motor drives.
For engineers reviewing the SMBJ8.5AHM3_B/H datasheet, SMBJ8.5AHM3_B/H pinout, SMBJ8.5AHM3_B/H application, or SMBJ8.5AHM3_B/H equivalent, key selection criteria include unidirectional polarity, 150 °C max junction temperature, halogen-free RoHS-compliant construction (HM3 suffix), AEC-Q101 qualification readiness, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a voltage-clamping protection device, leveraging an avalanche breakdown mechanism to divert transient energy away from sensitive downstream circuitry. Its low incremental surge resistance and sub-nanosecond response time ensure effective suppression of ESD (IEC 61000-4-2), EFT (IEC 61000-4-4), and lightning-induced surges (IEC 61000-4-5).
The SMBJ8.5AHM3_B/H is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), supports continuous power dissipation of 5.0 W at TA = 50 °C, and exhibits a VBR temperature coefficient of +0.073 %/°C - enabling stable clamping performance across automotive and industrial ambient ranges (-55 °C to +150 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.5 V - maximum reverse working voltage before clamping begins; sets upper limit for normal operating voltage on protected line |
| VBR (min/max) | 9.44 V / 10.4 V at IT = 1 mA - guaranteed avalanche onset range; ensures predictable turn-on under transient stress |
| VC @ IPPM | 14.4 V at 41.7 A - clamped voltage during 10/1000 µs surge; defines worst-case overvoltage seen by protected IC |
| PPPM | 600 W - peak pulse power handling per 10/1000 µs waveform; determines survivability against common surge events |
| ID @ VWM | 20 µA max - reverse leakage at stand-off voltage; low enough to avoid interference with high-impedance sensor or logic inputs |
| TJ max. | +150 °C - maximum junction temperature; enables use in under-hood automotive or enclosed industrial environments |
| Package | SMB (DO-214AA) - standardized surface-mount outline with 5.21 mm × 4.06 mm footprint and 2.20 mm height; compatible with J-STD-020 MSL Level 1 reflow |
Pinout & Package
Package: SMB (DO-214AA), unidirectional configuration with cathode band marking on one end. Matte tin-plated leads, solderable per J-STD-002 and JESD 22-B102. Meets UL 94 V-0 flammability rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes conduction path during reverse-biased transient clamp |
| Cathode | High-side transient input terminal | Connected to protected line (e.g., 12 V rail or sensor output); avalanche breakdown occurs between cathode and anode when V > VBR |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables robust protection against IEC 61000-4-5 Level 3 (1 kV/2 Ω) surges without degradation |
| 14.4 V clamping voltage at 41.7 A | Limits overvoltage stress on 3.3 V or 5 V logic rails and gate drivers during surge events |
| Halogen-free, RoHS-compliant (HM3 suffix) | Meets IPC-1752A material declaration requirements and EU environmental compliance mandates |
| AEC-Q101 qualified variant available | Supports automotive-grade reliability validation including HTGB, HTRB, and TCT for engine control and ADAS modules |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and standard reflow profile usage without baking preconditioning |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
|
Use Scenario: Protection of gate driver ICs and microcontroller I/O pins against inductive kickback from relay coils and solenoid loads. IC Role / Device Role / Timing Role: Unidirectional TVS placed between 12 V supply rail and ground, clamping transients <100 ns after onset. Use Value: Prevents latch-up or permanent damage to 3.3 V MCU GPIOs exposed to >100 V spikes during load switching. |
Use Scenario: Surge suppression on LIN bus lines and sensor supply rails in door module ECUs subjected to battery dump and load dump events. IC Role / Device Role / Timing Role: Standoff-rated clamping device mounted directly at connector entry point, shunting transients before reaching ASIC. Use Value: Maintains signal integrity on 12 V LIN lines while meeting ISO 16750-2 pulse 5a/b immunity requirements. |
| Consumer Power Adapters | Telecom PoE Injectors |
|
Use Scenario: Secondary-side overvoltage protection on 5 V/9 V/12 V DC outputs of AC-DC adapters exposed to lightning-induced surges on mains input. IC Role / Device Role / Timing Role: Fast-response clamping diode placed across output capacitor terminals to absorb residual transients escaping primary-side protection. Use Value: Limits output overvoltage to <15 V during 600 W surge, preventing damage to USB-PD controllers and connected devices. |
Use Scenario: Data line protection on IEEE 802.3af/at PoE injectors where Ethernet pairs carry both power and 100BASE-TX signals. IC Role / Device Role / Timing Role: Unidirectional TVS on each powered pair (spare pairs or data pairs), referenced to local ground plane. Use Value: Clamps induced surges up to ±1 kV without affecting 100 MHz signal integrity or violating PoE voltage tolerance limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.5A-E3/52 | RoHS-compliant but not halogen-free; commercial grade only (no AEC-Q101 path) | Lacks HM3's halogen-free certification and automotive qualification readiness | Select when cost-sensitive industrial designs do not require halogen-free or automotive traceability |
| SAC8.5 | Same VWM and VC, but SOD-123FL package (smaller footprint, lower IPPM = 25 A) | Lower surge capacity (300 W vs. 600 W); unsuitable for high-energy inductive load switching | Choose only for space-constrained consumer electronics with lower surge threat profiles |
Compared with SMBJ8.5A-E3/52, the SMBJ8.5AHM3_B/H adds halogen-free compliance and AEC-Q101 qualification path; compared with SAC8.5, it delivers double the surge energy handling in a larger but industry-standard SMB package - making it optimal for ruggedized industrial and automotive-adjacent designs.
Availability
SMBJ8.5AHM3_B/H is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, consumer power adapters, and telecom PoE injectors requiring stable component supply with halogen-free and automotive-qualified sourcing options.
Supply support for SMBJ8.5AHM3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in harsh environments, targeting automotive, industrial, and telecom systems where robustness against ESD, EFT, and lightning surges is mission-critical.
FAQ
What is the maximum clamping voltage of SMBJ8.5AHM3_B/H under surge conditions?
The SMBJ8.5AHM3_B/H has a maximum clamping voltage (VC) of 14.4 V at 41.7 A peak pulse current (IPPM), measured with a 10/1000 µs waveform. This value defines the highest voltage that will appear across the protected circuit during a full-rated surge event, ensuring compatibility with 12 V system rails and 3.3 V/5 V logic interfaces. The SMBJ8.5AHM3_B/H maintains this clamping performance across its full operating temperature range.
Is SMBJ8.5AHM3_B/H suitable for automotive applications?
Yes - the HM3 suffix indicates halogen-free, RoHS-compliant construction, and the SMBJ8.5AHM3_B/H is part of the AEC-Q101-qualified SMBJ family (ordering code base P/NHM3_X). While SMBJ8.5AHM3_B/H itself is a commercial-grade tape-and-reel variant, it shares identical die, packaging, and electrical characteristics with AEC-Q101 versions, enabling direct qualification path for automotive body electronics and infotainment power rails.
What does the "_B/H" suffix mean in SMBJ8.5AHM3_B/H?
The "_B/H" suffix in SMBJ8.5AHM3_B/H denotes packaging configuration: "B" indicates the revision level (Revision B per Vishay document 88392), and "H" specifies the preferred package code for 7-inch plastic tape-and-reel delivery with 750 units per reel. This matches Vishay's standard ordering convention for SMBJ-HM3 variants intended for high-volume SMT assembly.
How does SMBJ8.5AHM3_B/H compare to bidirectional TVS diodes like SMBJ8.5CA?
The SMBJ8.5AHM3_B/H is unidirectional and must be oriented with cathode toward the protected line; SMBJ8.5CA is bidirectional with symmetrical clamping in both polarities. SMBJ8.5AHM3_B/H offers lower leakage (<20 µA at 8.5 V) and higher surge capability in DC-biased applications, whereas SMBJ8.5CA suits AC-coupled or floating signal lines. They are not interchangeable without circuit redesign.
What PCB layout guidance applies to SMBJ8.5AHM3_B/H for optimal surge performance?
For best transient suppression, mount SMBJ8.5AHM3_B/H with minimum trace length between cathode and protected node, and connect anode directly to a low-inductance ground plane using ≥5.0 mm × 5.0 mm copper pads per terminal. Avoid vias in the clamping path; use thermal relief only on non-current-carrying traces. This layout ensures the SMBJ8.5AHM3_B/H achieves its rated 600 W peak pulse power and 14.4 V clamping voltage.
SMBJ8.5AHM3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.44V
- Voltage - Clamping (Max) @ Ipp:
- 14.4V
- Current - Peak Pulse (10/1000µs):
- 41.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ8.5AHM3_B/H FAQ
1.How can I place an order for SMBJ8.5AHM3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.5AHM3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.5AHM3_B/H reliable?
The price and inventory of SMBJ8.5AHM3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.5AHM3_B/H is usually 5 days.
3.What payment methods are accepted for SMBJ8.5AHM3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.5AHM3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.5AHM3_B/H?
SMBJ8.5AHM3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.5AHM3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.5AHM3_B/H?
For technical support, including SMBJ8.5AHM3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.5AHM3_B/H requirements.
6.How does Aetrix verify that SMBJ8.5AHM3_B/H is sourced from the original manufacturer or authorized distributors?
All SMBJ8.5AHM3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.5AHM3_B/H meets industry standards.
7.What is the process for return or replacement of SMBJ8.5AHM3_B/H?
All SMBJ8.5AHM3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.5AHM3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.5AHM3_B/H part is unused and in its original packaging.
Return procedure for SMBJ8.5AHM3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.5AHM3_B/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
