Vishay General Semiconductor - Diodes Division SMBJ8.5CAHE3_B/I
- Part No.:
- SMBJ8.5CAHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.5CAHE3_B/I.pdf
- Description:
- 600W,8.5V 5%,BIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:4,975
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ8.5CAHE3_B/I from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on signal and power lines. It features a 8.5 V stand-off voltage (VWM), 9.44–10.4 V breakdown voltage (VBR) at 1 mA, 14.4 V maximum clamping voltage (VC) at 41.7 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 μs waveform), used in ESD and surge protection of sensor interfaces and industrial I/O circuits.
For engineers reviewing the SMBJ8.5CAHE3_B/I datasheet, SMBJ8.5CAHE3_B/I pinout, SMBJ8.5CAHE3_B/I application, or SMBJ8.5CAHE3_B/I equivalent, key selection criteria include bidirectional clamping capability, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and compatibility with automated SMT placement on PCBs with 5.0 mm × 5.0 mm copper pads.
Technical Context
This device operates as a voltage-clamping protector with symmetrical bidirectional conduction-no polarity marking required-and responds within picoseconds to transient overvoltages. Its glass-passivated junction ensures stable breakdown behavior under repetitive surge stress, while the low incremental surge resistance supports consistent clamping performance across multiple 10/1000 μs pulses at 0.01% duty cycle.
The SMBJ8.5CAHE3_B/I is rated for 5.0 W steady-state power dissipation at TA = 50 °C and exhibits a typical thermal resistance of 20 °C/W from junction to lead, enabling effective heat transfer to PCB copper when mounted per recommended pad layout. Its MSL Level 1 rating confirms suitability for standard reflow without moisture sensitivity concerns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.5 V - Maximum continuous reverse operating voltage before clamping begins; defines safe signal line operating margin. |
| VBR min/max | 9.44 V / 10.4 V at IT = 1 mA - Confirmed breakdown threshold range; ensures reliable turn-on during transients. |
| VC @ IPPM | 14.4 V at 41.7 A - Clamped voltage seen by protected circuit during worst-case 600 W surge; limits downstream stress. |
| PPPM | 600 W (10/1000 μs) - Peak transient energy handling capacity; validated for lightning and inductive switching events. |
| TJ max | +150 °C - Maximum junction temperature; supports operation in under-hood automotive and industrial environments. |
| RθJA | 100 °C/W - Thermal resistance junction-to-ambient; requires minimum 5.0 mm × 5.0 mm copper pad per terminal for derating compliance. |
| AEC-Q101 | Qualified - Meets automotive-grade reliability requirements for vibration, temperature cycling, and HTRB testing. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, bidirectional configuration with no polarity marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H), matte tin-plated leads, RoHS-compliant and halogen-free (HE3 suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient return path (bidirectional) | One end of symmetrical P-N junction; connects to reference plane or signal return during either polarity surge. |
| Cathode | Transient return path (bidirectional) | Other end of symmetrical P-N junction; functionally identical to Anode in CA devices; no band marking. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal lines without polarity concern. |
| 600 W peak pulse power | Handles IEC 61000-4-5 Level 4 surges (4 kV, 2 Ω source) on 24 V industrial buses with margin. |
| AEC-Q101 qualification | Validates robustness for automotive body electronics, infotainment I/O, and ADAS sensor interfaces. |
| MSL Level 1 | Permits use in standard Pb-free reflow profiles without baking or special handling. |
| Glass passivated junction | Ensures long-term stability of VBR and leakage under thermal cycling and humidity exposure. |
Applications
| Industrial Sensor Interface | Automotive Body Control Module |
|---|---|
Use Scenario: Protecting analog output lines of pressure/temperature sensors exposed to relay coil kickback in factory automation PLCs. IC Role / Device Role / Timing Role: Voltage clamp placed between sensor output and microcontroller ADC input to limit transient excursions to ≤14.4 V. Use Value: Prevents ADC saturation and latch-up during 600 W inductive spikes while maintaining <1 μA leakage at 8.5 V nominal rail. | Use Scenario: Safeguarding LIN bus transceiver pins against load dump and jump-start induced surges in door module ECUs. IC Role / Device Role / Timing Role: Bidirectional TVS connected across LIN data line and ground to suppress ±100 V transients within nanoseconds. Use Value: Maintains signal integrity below LIN physical layer thresholds (±40 V) and survives 1000+ surge cycles per AEC-Q101. |
| Telecom Power Input Stage | Consumer USB-C Port Protection |
Use Scenario: Secondary-side surge suppression on 12 V DC input of PoE-powered network switches after primary-stage MOVs. IC Role / Device Role / Timing Role: Fast-response clamping device placed directly at connector entry point to shunt residual transients before DC-DC regulator. Use Value: Limits voltage overshoot to 14.4 V during 10/1000 μs surges, preventing regulator overvoltage shutdown and capacitor stress. | Use Scenario: ESD and surge protection on VBUS and CC lines of USB-C receptacles in portable monitors and docking stations. IC Role / Device Role / Timing Role: Bidirectional TVS integrated into compact layout near connector to meet IEC 61000-4-2 Level 4 (±15 kV air) and IEC 61000-4-5. Use Value: Provides sub-1 ns response with <1 μA ID at 8.5 V, preserving USB-C enumeration timing and preventing port controller damage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.5CAHM3_B/I | Halogen-free variant; identical electrical specs and AEC-Q101 qualification. | No functional difference; selected where halogen-free compliance is mandated by OEM or regional regulation. | Direct material substitution when halogen-free requirement applies; same footprint and thermal behavior. |
| SMAJ8.5CAHE3_A/H | Lower PPPM (400 W), larger VBR tolerance (9.44–11.6 V), SMA package (smaller thermal mass). | Reduced surge margin; unsuitable for IEC 61000-4-5 Level 4 or automotive load dump. | Acceptable only for cost-sensitive consumer applications with lower surge threat profiles and space constraints. |
Compared with SMBJ8.5CAHE3_B/I, the HM3 variant offers identical protection performance with halogen-free construction, while the SMAJ8.5CAHE3_A/H trades 33% peak power capability and looser VBR control for smaller size-making SMBJ8.5CAHE3_B/I the preferred choice for industrial and automotive designs requiring full 600 W margin and tight clamping precision.
Availability
SMBJ8.5CAHE3_B/I is available at Aetrix Electronics and suitable for industrial sensor interface, automotive body control module, and telecom power input stage applications requiring stable component supply, AEC-Q101 traceability, and long-term production continuity.
Supply support for SMBJ8.5CAHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in harsh environments, targeting automotive, industrial, and telecom systems where robustness against ESD, lightning, and inductive switching is mission-critical.
FAQ
What is the clamping voltage of SMBJ8.5CAHE3_B/I at its rated peak pulse current?
The SMBJ8.5CAHE3_B/I has a maximum clamping voltage (VC) of 14.4 V at its rated peak pulse current (IPPM) of 41.7 A, measured using the standardized 10/1000 μs waveform. This value defines the upper voltage limit imposed on protected circuitry during a full 600 W transient event and is guaranteed across the operating temperature range of –55 °C to +150 °C.
Is SMBJ8.5CAHE3_B/I suitable for automotive applications?
Yes, SMBJ8.5CAHE3_B/I is AEC-Q101 qualified and explicitly designated for automotive use via its HE3 suffix. It meets stress test requirements including temperature cycling, highly accelerated life testing (HALT), and surge endurance under automotive load dump conditions. The device is commonly deployed in body control modules, sensor interfaces, and infotainment I/O protection where reliability across extended temperature and vibration profiles is mandatory.
How does the bidirectional configuration of SMBJ8.5CAHE3_B/I affect PCB layout?
The SMBJ8.5CAHE3_B/I has no polarity marking and functions identically in both directions, eliminating orientation constraints during automated placement. This simplifies PCB layout by removing the need for silkscreen polarity indicators or assembly verification steps. Layout must still follow Vishay's recommended 5.0 mm × 5.0 mm copper pad per terminal to maintain thermal performance and achieve rated PPPM.
What is the maximum reverse leakage current of SMBJ8.5CAHE3_B/I at its stand-off voltage?
At the stand-off voltage (VWM) of 8.5 V and TA = 25 °C, the SMBJ8.5CAHE3_B/I exhibits a maximum reverse leakage current (ID) of 20 μA. This low leakage ensures minimal power loss and signal distortion in always-on sensor or communication lines, supporting accurate analog measurements and stable digital signaling without loading effects.
Does SMBJ8.5CAHE3_B/I require derating at elevated ambient temperatures?
Yes, SMBJ8.5CAHE3_B/I must be derated above TA = 25 °C per Figure 2 in the datasheet. Its peak pulse power capability decreases linearly with junction temperature, reaching ~50% of rated 600 W at TJ ≈ 100 °C. Designers must calculate actual junction temperature using RθJA = 100 °C/W and ensure thermal design maintains TJ ≤ 150 °C under worst-case surge repetition and ambient conditions.
SMBJ8.5CAHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.44V
- Voltage - Clamping (Max) @ Ipp:
- 14.4V
- Current - Peak Pulse (10/1000µs):
- 41.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ8.5CAHE3_B/I FAQ
1.How can I place an order for SMBJ8.5CAHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.5CAHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.5CAHE3_B/I reliable?
The price and inventory of SMBJ8.5CAHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.5CAHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ8.5CAHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.5CAHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.5CAHE3_B/I?
SMBJ8.5CAHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.5CAHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.5CAHE3_B/I?
For technical support, including SMBJ8.5CAHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.5CAHE3_B/I requirements.
6.How does Aetrix verify that SMBJ8.5CAHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ8.5CAHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.5CAHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ8.5CAHE3_B/I?
All SMBJ8.5CAHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.5CAHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.5CAHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ8.5CAHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.5CAHE3_B/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

