Vishay General Semiconductor - Diodes Division SMBJ85CD-M3/I
- Part No.:
- SMBJ85CD-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ85CD-M3/I.pdf
- Description:
- TVS DIODE 85VWM 135VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:7,590
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ85CD-M3/I from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, with 85 V standoff voltage (VWM), 95.7–103 V breakdown voltage (VBR), 135 V clamping voltage (VC) at 4.46 A peak pulse current, and 600 W peak pulse power rating for 10/1000 μs waveform - used to protect MOSFETs, sensor signal lines, and power rails in industrial and telecom equipment against lightning-induced surges and inductive switching transients.
For engineers reviewing the SMBJ85CD-M3/I datasheet, SMBJ85CD-M3/I pinout, SMBJ85CD-M3/I application, or SMBJ85CD-M3/I equivalent, key selection criteria include bidirectional polarity, ±3.5 % VBR tolerance, low leakage (<0.5 μA at VWM), MSL Level 1 moisture sensitivity, and halogen-free RoHS-compliant M3 construction suitable for automated SMT assembly.
Technical Context
This device operates as a voltage-clamping protector with symmetrical avalanche behavior in both directions, enabling suppression of positive and negative transients without polarity constraints. Its 135 V clamping voltage at 4.46 A IPPM ensures robust overvoltage protection while maintaining safe margin below typical 150 V system insulation limits.
Designed for transient energy absorption per IEC 61000-4-5 (10/1000 μs), it delivers 600 W peak pulse power with <1 ns response time and low incremental surge resistance - critical for safeguarding sensitive analog front-ends and digital I/O in harsh EMI environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 85 V - maximum continuous reverse operating voltage before clamping begins |
| VBR min/max | 95.7 V / 103 V at 1 mA - tight ±3.5 % tolerance ensures predictable turn-on across production lots |
| VC @ IPPM | 135 V at 4.46 A - clamping voltage defines worst-case stress on downstream circuitry during surge |
| PPPM | 600 W - peak transient power handling capability under standardized 10/1000 μs waveform |
| ID @ VWM | <0.5 μA - ultra-low leakage preserves signal integrity and minimizes standby power loss |
| TJ max | +150 °C - enables reliable operation in high-temperature industrial enclosures and power supplies |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, MSL Level 1 (260 °C reflow peak), matte tin-plated terminals solderable per J-STD-002/JESD 22-B102. Bidirectional type - no cathode band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry (negative polarity) | One terminal of symmetrical PN junction - conducts during negative transients |
| Cathode | Transient current entry (positive polarity) | Other terminal of symmetrical PN junction - conducts during positive transients |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables precise, repeatable clamping threshold across temperature and manufacturing variance |
| 600 W peak pulse power | Supports compliance with IEC 61000-4-5 Level 4 (4 kV line-to-line) surge immunity testing |
| Low leakage <0.5 μA | Prevents signal distortion and DC offset in high-impedance sensor interfaces and precision analog paths |
| MSL Level 1 rating | Allows unlimited floor life and standard reflow without baking - reduces manufacturing overhead |
Applications
| Industrial Motor Control | Telecom Power Supply Input |
|---|---|
Use Scenario: Protection of gate drivers and feedback sensing circuits in variable-frequency drives subjected to inductive kickback from motor windings. IC Role / Device Role / Timing Role: Bidirectional TVS clamp limiting transient overvoltage spikes to ≤135 V during MOSFET/IGBT switching events. Use Value: Prevents gate oxide rupture and false triggering by holding drain-source voltage within safe SOA limits during repetitive 600 W surges. | Use Scenario: Input-stage surge suppression on AC/DC and DC/DC converter front-ends exposed to lightning-induced surges on telecom rectifier inputs. IC Role / Device Role / Timing Role: Primary transient shunt element absorbing 10/1000 μs surges before they reach bulk capacitors and controller ICs. Use Value: Maintains uninterrupted operation during 4 kV line-to-line surges per IEC 61000-4-5, avoiding brownouts or latch-up in PMICs and supervisors. |
| Automotive Body Control Module (BCM) | Industrial Sensor Signal Conditioning |
Use Scenario: CAN/LIN bus line protection in BCMs where load-dump and jump-start transients exceed 85 V. IC Role / Device Role / Timing Role: Bidirectional clamping device placed directly at connector interface to limit differential-mode surges. Use Value: Ensures CAN transceiver survival under ISO 7637-2 Pulse 5a (75 V, 100 ms) and Pulse 1 (−100 V) without requiring series impedance. | Use Scenario: Protection of 4–20 mA current-loop and RS-485 transceivers in factory-floor pressure/temperature sensors. IC Role / Device Role / Timing Role: Low-capacitance (≈100 pF), low-leakage TVS placed across differential signal pairs. Use Value: Clamps ESD and fast transients to ≤135 V while preserving signal fidelity and minimizing common-mode error in precision analog measurement paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ85CA-E3/52 (Vishay) | Same VWM/VBR/VC specs; differs in packaging (tape-and-reel quantity 5000 vs. 3200) and MSL level (Level 1 vs. Level 1 - identical) | No functional difference; identical electrical performance and thermal derating | Select SMBJ85CD-M3/I when 13" tape-and-reel (3200 pcs) and M3 industrial-grade finish are required. |
| P6SMB85CA (Littelfuse) | Same VWM (85 V), VBR (95–103 V), VC (135 V); slightly higher ID (1.0 μA vs. 0.5 μA); same SMB package and 600 W rating | Valid alternative where minor leakage increase is acceptable; identical footprint and clamping behavior | Choose P6SMB85CA if dual-sourcing or second-source qualification is needed with verified field reliability in telecom infrastructure. |
Compared with SMBJ85CD-M3/I, SMBJ85CA-E3/52 offers identical protection performance but different reel size and logistics coding, while P6SMB85CA provides equivalent clamping and power rating with marginally higher leakage - both serve as drop-in alternatives only after verifying board-level surge test compliance and layout parasitics.
Availability
SMBJ85CD-M3/I is available at Aetrix Electronics and suitable for industrial motor control, telecom power supply input, automotive body control modules, and industrial sensor signal conditioning requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SMBJ85CD-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and high-power handling.
The SMBJ series is designed specifically for robust transient suppression in demanding industrial, automotive, and telecom applications - delivering tight VBR tolerance, low leakage, and repeatable clamping under repetitive surge stress.
FAQ
What is the clamping voltage of SMBJ85CD-M3/I and how does it protect downstream components?
The SMBJ85CD-M3/I has a maximum clamping voltage (VC) of 135 V at 4.46 A peak pulse current (IPPM) under 10/1000 μs waveform. This means that during a surge event, the device limits voltage across protected lines to ≤135 V, preventing overstress of downstream ICs such as microcontrollers, transceivers, or MOSFET gates. Its fast response time (<1 ns) ensures clamping occurs before transient energy damages sensitive nodes, making SMBJ85CD-M3/I effective for IEC 61000-4-5 Level 4 compliance.
Is SMBJ85CD-M3/I unidirectional or bidirectional, and how can I identify its polarity?
SMBJ85CD-M3/I is a bidirectional TVS diode, indicated by the "CD" suffix per Vishay's naming convention. Unlike unidirectional types, it has no cathode band marking on the SMB package - both terminals behave identically under positive or negative transients. This symmetry allows placement without orientation concerns on differential lines or AC-coupled circuits, simplifying layout and reducing assembly errors compared to unidirectional variants like SMBJ85D-M3/I.
What is the meaning of the "M3" suffix in SMBJ85CD-M3/I?
"M3" denotes Vishay's industrial-grade, halogen-free, RoHS-compliant construction with matte tin-plated leads qualified to JESD 201 Class 2 whisker resistance. It also indicates compliance with UL 94 V-0 flammability rating for the molding compound. The "I" suffix specifies packaging in 13" diameter plastic tape-and-reel containing 3200 units - distinct from "H" (7", 750 pcs). SMBJ85CD-M3/I is rated MSL Level 1, permitting unlimited floor life and standard reflow without preconditioning.
Can SMBJ85CD-M3/I be used in place of SMBJ85D-M3/I, and what are the key differences?
No - SMBJ85CD-M3/I is bidirectional, while SMBJ85D-M3/I is unidirectional. The "CD" version clamps symmetrically for both polarities, whereas the "D" version only protects against positive transients (with cathode band indicating polarity). Substituting one for the other risks failure: using SMBJ85D-M3/I on an AC or differential line leaves negative transients unclamped, and using SMBJ85CD-M3/I in a DC-biased unidirectional path introduces unnecessary leakage paths. Always match suffix to circuit topology - SMBJ85CD-M3/I is mandatory for bidirectional signal lines or floating power rails.
What is the thermal resistance and power derating behavior of SMBJ85CD-M3/I?
SMBJ85CD-M3/I has a typical junction-to-ambient thermal resistance (RθJA) of 125 °C/W on minimum recommended pad layout and 100 °C/W on 5.0 mm × 5.0 mm copper pad. Its steady-state power dissipation is 1.0 W at TA = 25 °C, derating linearly to zero at +150 °C ambient. For example, at 75 °C ambient, allowable PD drops to ~0.6 W. This derating curve (Fig. 5 in datasheet 87606) must be applied when estimating long-term reliability in enclosed, convection-limited environments - SMBJ85CD-M3/I is not intended for continuous power dissipation but for transient energy absorption.
SMBJ85CD-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 85V
- Voltage - Breakdown (Min):
- 95.7V
- Voltage - Clamping (Max) @ Ipp:
- 135V
- Current - Peak Pulse (10/1000µs):
- 4.46A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ85CD-M3/I FAQ
1.How can I place an order for SMBJ85CD-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ85CD-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ85CD-M3/I reliable?
The price and inventory of SMBJ85CD-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ85CD-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ85CD-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ85CD-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ85CD-M3/I?
SMBJ85CD-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ85CD-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ85CD-M3/I?
For technical support, including SMBJ85CD-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ85CD-M3/I requirements.
6.How does Aetrix verify that SMBJ85CD-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ85CD-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ85CD-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ85CD-M3/I?
All SMBJ85CD-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ85CD-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ85CD-M3/I part is unused and in its original packaging.
Return procedure for SMBJ85CD-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ85CD-M3/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

