Vishay General Semiconductor - Diodes Division SMBJ8.5CHE3/5B
- Part No.:
- SMBJ8.5CHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.5CHE3/5B.pdf
- Description:
- TVS DIODE 8.5VWM 15.9VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ8.5CHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 8.5 V stand-off voltage (VWM), 9.44–10.4 V breakdown voltage (VBR) at 1 mA, and clamps transients to ≤14.4 V at 41.7 A peak pulse current (IPPM), making it suitable for protecting MOSFETs, ICs, and sensor signal lines in industrial power supplies and automotive control modules.
For engineers reviewing the SMBJ8.5CHE3/5B datasheet, SMBJ8.5CHE3/5B pinout, SMBJ8.5CHE3/5B application, or SMBJ8.5CHE3/5B equivalent, key selection criteria include its AEC-Q101 qualification, 600 W peak pulse power rating (10/1000 µs), low clamping ratio (VC/VBR ≈ 1.45), and RoHS-compliant matte tin-plated leads compatible with J-STD-002 soldering standards.
Technical Context
This TVS diode operates as a unidirectional clamping device, leveraging an avalanche breakdown mechanism to divert transient energy away from protected circuitry. Its glass-passivated junction ensures stable leakage performance (<20 µA at VWM) and fast response time (<1 ns), critical for suppressing ESD and inductive switching spikes.
The SMBJ8.5CHE3/5B is rated for TJ = –55 °C to +150 °C operation, with thermal resistance RθJA = 100 °C/W and RθJL = 20 °C/W, enabling reliable performance on standard PCB copper pads (0.2" × 0.2"). Its AEC-Q101 qualification confirms suitability for automotive-grade applications requiring validated reliability under temperature cycling and humidity stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 8.5 V - Maximum continuous reverse voltage before significant leakage; defines operating margin below clamping threshold. |
| VBR (Breakdown Voltage) | 9.44–10.4 V at IT = 1 mA - Avalanche onset range; ensures predictable turn-on during transients without premature conduction. |
| VC (Clamping Voltage) | ≤14.4 V at IPPM = 41.7 A - Peak voltage seen by protected circuit during 10/1000 µs surge; determines safe voltage headroom for downstream ICs. |
| PPPM (Peak Pulse Power) | 600 W - Sustained transient energy handling capability per JEDEC standard waveform; enables protection against IEC 61000-4-5 Level 3 surges. |
| ID (Reverse Leakage) | ≤20 µA at VWM - Low standby current minimizes power loss and avoids false triggering in high-impedance signal paths. |
| TJ max. | +150 °C - Junction temperature limit supporting operation in under-hood automotive or industrial motor drive environments. |
| Package | SMB (DO-214AA) - Surface-mount footprint (5.21 mm × 4.06 mm) optimized for automated placement and thermal dissipation via copper pad mounting. |
Pinout & Package
Package: SMB (DO-214AA), molded case with matte tin-plated leads; polarity indicated by cathode band on the body end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or common return path; forms current path during reverse-biased clamping event. |
| Cathode | High-side input terminal | Connected to protected line (e.g., power rail or signal); conducts avalanche current when V > VBR toward anode. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and body electronics, with extended temperature and reliability testing. |
| 600 W peak pulse power (10/1000 µs) | Handles high-energy transients from inductive load switching (e.g., solenoids, relays) without degradation over rated duty cycle (0.01 %). |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage across temperature extremes, critical for long-term field reliability. |
| MSL Level 1 (J-STD-020) | Unlimited floor life at ≤30 °C/60 % RH; supports reflow soldering up to 260 °C peak without moisture-induced damage. |
| RoHS-compliant & halogen-free option | SMBJ8.5CHE3/5B uses HE3 suffix - RoHS-compliant and AEC-Q101 qualified; meets environmental compliance for global OEM programs. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Guarding |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed microcontroller power inputs against load dump and alternator ripple in vehicle ECUs. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VCC and GND to clamp surges above 14.4 V while remaining inert below 8.5 V. Use Value: Prevents latch-up or permanent damage to MCU supply pins during ISO 7637-2 Pulse 5a events, extending system lifetime in harsh electrical environments. |
Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loop) from ESD and cable discharge events in factory automation sensors. IC Role / Device Role / Timing Role: TVS connected across signal and return conductors to shunt sub-100 ns ESD pulses before they reach precision amplifier inputs. Use Value: Maintains signal integrity with <20 µA leakage at 8.5 V, avoiding offset errors in millivolt-level measurements while surviving IEC 61000-4-2 ±8 kV contact discharge. |
| DC-DC Converter Input Stage | MOSFET Gate Driver Protection |
|
Use Scenario: Safeguarding buck converter input capacitors and controller ICs from voltage spikes caused by upstream fuse blow or relay bounce. IC Role / Device Role / Timing Role: Placed directly at converter input terminals to clamp transients within 1 ns, limiting peak stress on input electrolytics and IC ESD structures. Use Value: Enables use of smaller input bulk capacitors by absorbing 600 W surges without derating, reducing BOM cost and board area in compact power modules. |
Use Scenario: Protecting high-side N-channel MOSFET gate drivers from Miller-induced voltage overshoot during fast switching transitions. IC Role / Device Role / Timing Role: Connected from gate to source to clamp dv/dt-induced spikes exceeding 14.4 V, preventing unintended turn-on or oxide breakdown. Use Value: Eliminates need for external Zener clamps or RC snubbers, simplifying gate drive layout while maintaining <1 ns response for 100 kHz+ switching frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.5AHE3/5B | Same electrical specs and AEC-Q101 qualification; differs only in packaging tape/reel size (3200 pcs vs. 750 pcs) and revision code. | No functional difference; identical in circuit design, layout, and reliability testing. | Select based on production volume and assembly line reel capacity requirements. |
| SMCJ8.5AHE3/5B | Higher 1500 W PPPM rating, larger SMC (DO-214AB) package, same VWM/VBR/VC specs. | Better suited for higher-energy surges (e.g., IEC 61000-4-5 Level 4); requires larger PCB footprint and higher thermal mass. | Choose when surge threat level exceeds 600 W but board space allows SMC package; not drop-in compatible due to different dimensions and pad layout. |
Compared with SMBJ8.5CHE3/5B, SMBJ8.5AHE3/5B offers identical protection performance with alternate packaging, while SMCJ8.5AHE3/5B provides enhanced energy handling at the cost of increased size-making the SMBJ variant optimal for space-constrained, automotive-qualified designs needing precise 600 W surge absorption.
Availability
SMBJ8.5CHE3/5B is available at Aetrix Electronics and suitable for automotive control units, industrial sensor interfaces, and DC-DC converter input stages requiring stable component supply, AEC-Q101 validation, and consistent RoHS/halogen-free compliance.
Supply support for SMBJ8.5CHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series was developed to deliver high-power transient suppression in compact surface-mount packages for automotive, industrial, and telecom systems where space, thermal performance, and qualification rigor are critical.
FAQ
What is the clamping voltage of SMBJ8.5CHE3/5B at its rated peak pulse current?
The SMBJ8.5CHE3/5B has a maximum clamping voltage (VC) of 14.4 V when subjected to its rated peak pulse current (IPPM) of 41.7 A under the standard 10/1000 µs waveform. This value is measured at the device terminals and represents the highest voltage that will appear across the protected circuit during a full-rated surge event, ensuring downstream components remain within safe operating limits.
Is SMBJ8.5CHE3/5B suitable for automotive applications?
Yes, SMBJ8.5CHE3/5B is AEC-Q101 qualified and explicitly designated for automotive use with the "HE3" suffix. It undergoes rigorous stress testing-including temperature cycling, humidity bias, and mechanical shock-to ensure reliability in engine control units, body electronics, and infotainment power supplies operating from –55 °C to +150 °C.
How does the SMBJ8.5CHE3/5B differ from non-AEC-Q101 versions like SMBJ8.5AE3/5B?
The SMBJ8.5CHE3/5B includes full AEC-Q101 qualification testing and traceability documentation, whereas SMBJ8.5AE3/5B is commercial-grade only. Both share identical electrical parameters (VWM = 8.5 V, VC ≤ 14.4 V), but only SMBJ8.5CHE3/5B is approved for automotive production programs requiring certified component reliability and change control.
What is the thermal resistance of SMBJ8.5CHE3/5B, and how does it affect PCB layout?
SMBJ8.5CHE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead (RθJL) of 20 °C/W when mounted on minimum recommended 0.2" × 0.2" copper pads. To maintain safe junction temperatures under repeated surges, designers must provide adequate copper area and avoid excessive trace length between the device and ground/power planes.
Can SMBJ8.5CHE3/5B be used in bidirectional configurations?
No, SMBJ8.5CHE3/5B is strictly unidirectional, as indicated by the "A" suffix and cathode band marking. For bidirectional protection, Vishay specifies the "CA" suffix (e.g., SMBJ8.5CA), which lacks polarity marking and exhibits symmetrical breakdown in both directions-using SMBJ8.5CHE3/5B in reverse-biased signal paths would result in forward conduction and failure.
SMBJ8.5CHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.44V
- Voltage - Clamping (Max) @ Ipp:
- 15.9V
- Current - Peak Pulse (10/1000µs):
- 37.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ8.5CHE3/5B FAQ
1.How can I place an order for SMBJ8.5CHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.5CHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.5CHE3/5B reliable?
The price and inventory of SMBJ8.5CHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.5CHE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ8.5CHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.5CHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.5CHE3/5B?
SMBJ8.5CHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.5CHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.5CHE3/5B?
For technical support, including SMBJ8.5CHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.5CHE3/5B requirements.
6.How does Aetrix verify that SMBJ8.5CHE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ8.5CHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.5CHE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ8.5CHE3/5B?
All SMBJ8.5CHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.5CHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.5CHE3/5B part is unused and in its original packaging.
Return procedure for SMBJ8.5CHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.5CHE3/5B Tags

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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