Vishay General Semiconductor - Diodes Division SMBJ8.5D-M3/H
- Part No.:
- SMBJ8.5D-M3/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.5D-M3/H.pdf
- Description:
- TVS DIODE 8.5VWM 14.3VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ8.5D-M3/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping inductive switching transients and ESD events on power and signal lines. It features a 8.5 V stand-off voltage (VWM), 9.57–10.3 V breakdown voltage (VBR) at 1 mA, 14.3 V maximum clamping voltage (VC) at 15 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform.
For engineers reviewing the SMBJ8.5D-M3/H datasheet, SMBJ8.5D-M3/H pinout, SMBJ8.5D-M3/H application, or SMBJ8.5D-M3/H equivalent, this page delivers verified electrical parameters, thermal derating behavior, M3 halogen-free RoHS-compliant construction, J-STD-020 MSL Level 1 qualification, and real-world protection use cases for ICs, MOSFETs, and sensor interfaces in industrial and telecom systems.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-band polarity marking, optimized for fast response (<1 ns) to voltage surges while maintaining low leakage (≤0.5 μA at 8.5 V). Its junction-to-ambient thermal resistance is 125 °C/W on minimum pad layout, supporting operation up to 150 °C junction temperature.
The SMBJ8.5D-M3/H delivers 14.3 V clamping voltage at 15 A IPPM under 10/1000 μs surge, with incremental surge resistance <1.0 Ω - enabling robust protection of downstream 3.3 V and 5 V logic without overvoltage stress. Its 1.0 W steady-state power dissipation at 25 °C ambient ensures compatibility with compact PCB layouts lacking forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.5 V - maximum reverse working voltage before conduction; sets upper limit for normal circuit operation without leakage-induced power loss |
| VBR min/max | 9.57 V / 10.3 V at 1 mA - tight ±3.5 % tolerance ensures predictable turn-on across production lots |
| VC @ IPPM | 14.3 V at 15 A - clamping voltage during 10/1000 μs surge; defines worst-case overvoltage seen by protected IC |
| PPPM | 600 W - peak pulse power handling per 10/1000 μs waveform; supports IEC 61000-4-5 Level 4 surge immunity |
| ID @ VWM | ≤0.5 μA - ultra-low reverse leakage preserves battery life and signal integrity in high-impedance sensor paths |
| TJ max | 150 °C - maximum junction temperature; enables reliable operation in sealed enclosures or high-ambient industrial environments |
| RθJA | 125 °C/W - thermal resistance on minimum recommended pad; informs PCB copper area requirements for thermal management |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, halogen-free, RoHS-compliant, MSL Level 1 (260 °C peak reflow), matte tin-plated leads compliant with J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lower-potential rail; forms forward-biased path during positive transients on cathode side |
| Cathode (banded end) | High-side surge input terminal | Connected to protected line (e.g., 5 V rail or RS-485 bus); conducts when line voltage exceeds VBR relative to anode |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Ensures consistent clamping threshold across manufacturing batches, reducing design margin uncertainty in safety-critical protection circuits |
| 600 W peak pulse power (10/1000 μs) | Meets IEC 61000-4-5 surge test requirements for industrial equipment without external series impedance |
| MSL Level 1 moisture sensitivity | Eliminates bake-out requirement prior to reflow, streamlining SMT assembly for high-volume production |
| Low 14.3 V clamping at 15 A | Protects 3.3 V and 5 V logic devices (e.g., microcontrollers, UART transceivers) from damage during 1 kV/0.5 Ω surge events |
| M3 suffix compliance | Halogen-free, RoHS-compliant, and passes JESD 201 Class 2 whisker test - suitable for automotive-qualified and long-life industrial designs |
Applications
| Industrial Motor Drive Control | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: Protection of gate drivers and MCU I/O pins against flyback voltage spikes from relay and solenoid coil de-energization. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between 12 V supply rail and ground, with cathode tied to rail. Use Value: Limits transient overshoot to ≤14.3 V, preventing latch-up or oxide breakdown in 12 V-tolerant logic and ensuring ASIL-B functional safety compliance. | Use Scenario: Surge suppression on LIN bus lines exposed to load dump and jump-start conditions in vehicle cabin electronics. IC Role / Device Role / Timing Role: Standoff-rated TVS connected between LIN data line and chassis ground, operating below 8.5 V normal mode voltage. Use Value: Clamps 100 V/10 ms load dump transients to safe levels within 1 ns, preserving signal integrity and meeting ISO 16750-2 pulse 5a requirements. |
| Telecom Power Supply Input | Consumer IoT Sensor Interface |
Use Scenario: Secondary-side overvoltage protection on 5 V DC-DC output feeding baseband processors and RF modules. IC Role / Device Role / Timing Role: Fast-response TVS shunting surge energy to ground before it reaches sensitive PMIC inputs. Use Value: Withstands 600 W pulses without degradation, enabling single-device protection without series resistors or ferrites that would compromise efficiency. | Use Scenario: ESD protection on analog sensor outputs (e.g., temperature, humidity) routed across flexible PCBs in smart home hubs. IC Role / Device Role / Timing Role: Low-leakage (≤0.5 μA) TVS placed directly at connector interface to prevent charge accumulation on high-impedance nodes. Use Value: Maintains sensor accuracy by avoiding DC offset drift caused by leakage current, while passing IEC 61000-4-2 ±8 kV contact discharge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.0D-M3/H | Lower VWM (8.0 V) and VBR (9.03–9.69 V); same 600 W PPPM and SMB package | Better suited for 3.3 V systems where tighter margin below 5 V rail is required | Select when protecting 3.3 V logic with stricter clamping headroom needed below 12 V |
| SMBJ9.0D-M3/H | Higher VWM (9.0 V) and VBR (10.2–10.9 V); identical thermal and surge ratings | Preferred for 5 V rails with higher noise immunity margin and reduced false triggering | Choose for 5 V power domains subject to frequent low-energy transients where leakage must remain minimal |
Compared with SMBJ8.5D-M3/H, SMBJ8.0D-M3/H offers earlier clamping for lower-voltage rails but risks nuisance conduction near 8 V, while SMBJ9.0D-M3/H provides greater noise margin at 5 V but sacrifices some overvoltage headroom during fast-rising surges.
Availability
SMBJ8.5D-M3/H is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, telecom power supplies, and consumer IoT sensor interfaces requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for SMBJ8.5D-M3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, precision, and high-power density.
The SMBJ series is engineered for robust transient suppression in harsh electromagnetic environments, targeting industrial automation, automotive subsystems, and infrastructure-grade power electronics where failure modes must be rigorously controlled.
FAQ
What is the maximum clamping voltage of SMBJ8.5D-M3/H under standard surge conditions?
The SMBJ8.5D-M3/H has a maximum clamping voltage (VC) of 14.3 V when subjected to a 15 A peak pulse current with a 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 standards and defines the highest voltage the protected circuit will experience during a standardized surge event. The SMBJ8.5D-M3/H maintains this clamping performance across its full operating temperature range.
Is SMBJ8.5D-M3/H suitable for bidirectional transient protection?
No, SMBJ8.5D-M3/H is a unidirectional TVS diode, indicated by the absence of the "C" suffix (e.g., SMBJ8.5CD). Its cathode band marks the high-side terminal, and it conducts only when the cathode is driven positive relative to the anode. For bidirectional protection - such as AC lines or differential buses - a part with the CD suffix must be selected instead.
What does the "-M3/H" suffix indicate in SMBJ8.5D-M3/H?
The "-M3" suffix denotes halogen-free, RoHS-compliant construction with JESD 201 Class 2 whisker resistance, while "/H" specifies packaging in 7″ diameter plastic tape and reel with 750 units per reel. This configuration meets IPC/JEDEC standards for automated SMT placement and supports high-yield manufacturing without lead finish or moisture-related defects.
How does SMBJ8.5D-M3/H perform thermally on standard PCB layouts?
SMBJ8.5D-M3/H exhibits a typical junction-to-ambient thermal resistance (RθJA) of 125 °C/W when mounted on the minimum recommended pad layout per Vishay's datasheet. At 25 °C ambient, its steady-state power dissipation is rated at 1.0 W; derating begins above 25 °C, reaching zero dissipation at 150 °C. This behavior is critical for sizing copper pour areas in space-constrained industrial PCBs.
Can SMBJ8.5D-M3/H replace older SMBJ8.5A or SMBJ8.5CA variants?
SMBJ8.5D-M3/H is not a direct replacement for SMBJ8.5A or SMBJ8.5CA due to differences in VBR tolerance (±3.5 % vs. ±5 %) and construction (M3 halogen-free vs. legacy plating). While electrically compatible in most circuits, the tighter VBR tolerance and enhanced reliability qualifications of SMBJ8.5D-M3/H may require validation in safety-critical applications where older variants were previously qualified.
SMBJ8.5D-M3/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.57V
- Voltage - Clamping (Max) @ Ipp:
- 14.3V
- Current - Peak Pulse (10/1000µs):
- 42.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ8.5D-M3/H FAQ
1.How can I place an order for SMBJ8.5D-M3/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.5D-M3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.5D-M3/H reliable?
The price and inventory of SMBJ8.5D-M3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.5D-M3/H is usually 5 days.
3.What payment methods are accepted for SMBJ8.5D-M3/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.5D-M3/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.5D-M3/H?
SMBJ8.5D-M3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.5D-M3/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.5D-M3/H?
For technical support, including SMBJ8.5D-M3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.5D-M3/H requirements.
6.How does Aetrix verify that SMBJ8.5D-M3/H is sourced from the original manufacturer or authorized distributors?
All SMBJ8.5D-M3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.5D-M3/H meets industry standards.
7.What is the process for return or replacement of SMBJ8.5D-M3/H?
All SMBJ8.5D-M3/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.5D-M3/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.5D-M3/H part is unused and in its original packaging.
Return procedure for SMBJ8.5D-M3/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.5D-M3/H Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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