Vishay General Semiconductor - Diodes Division SMBJ85-E3/5B
- Part No.:
- SMBJ85-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ85-E3/5B.pdf
- Description:
- TVS DIODE 85VWM 151VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:8,571
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ85-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 85 V stand-off voltage (VWM), 94.4–104 V breakdown voltage (VBR) at 1 mA, 137 V maximum clamping voltage (VC) at 4.4 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 μs waveform), used in industrial power supply input protection.
For engineers reviewing the SMBJ85-E3/5B datasheet, SMBJ85-E3/5B pinout, SMBJ85-E3/5B application, or SMBJ85-E3/5B equivalent, key selection criteria include clamping voltage margin vs. protected IC's absolute maximum rating, thermal derating above 25 °C, unidirectional polarity alignment with DC rail orientation, and PCB pad layout compliance with JEDEC DO-214AA footprint requirements.
Technical Context
This TVS operates as a silicon avalanche diode that remains high-impedance below VWM (85 V) and rapidly transitions to low-impedance conduction above VBR (min 94.4 V) to shunt transient energy. Its 137 V VC at 4.4 A ensures safe clamping of 10/1000 μs surges without exceeding downstream component voltage limits.
Thermal performance is defined by RθJA = 100 °C/W and RθJL = 20 °C/W, requiring copper pad area ≥ 5.0 mm × 5.0 mm per terminal for rated 600 W pulse handling. The device is RoHS-compliant (E3 suffix), commercial-grade, and meets MSL Level 1 (260 °C reflow peak).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 85 V - Maximum continuous reverse operating voltage before leakage exceeds 1.0 μA; sets upper limit for normal circuit operation. |
| VBR (min/max) | 94.4 V / 104 V at 1 mA - Confirmed breakdown range defining turn-on threshold; ensures reliable triggering above system nominal voltage. |
| VC @ IPPM | 137 V at 4.4 A - Clamped voltage during 10/1000 μs surge; must stay below protected device's absolute max rating. |
| PPPM | 600 W - Peak pulse power handling capability with standard 10/1000 μs waveform; defines transient energy absorption capacity. |
| ID @ VWM | ≤1.0 μA - Reverse leakage at 85 V; low value minimizes standby power loss and avoids false triggering. |
| TJ max. | +150 °C - Maximum junction temperature; determines thermal design margin under repetitive surge conditions. |
| Package | SMB (DO-214AA) - Standard surface-mount outline with cathode band marking; compatible with automated pick-and-place. |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, UL 94 V-0 rated compound, polarity indicated by cathode band on unidirectional types.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or return path; forms current path during reverse-biased transient clamping. |
| Cathode | High-side connection point | Connected to protected line (e.g., +85 V rail); band-marked end; conducts when line voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power | Handles IEC 61000-4-5 Level 4 surges (4 kV open-circuit, 2 Ω source) on 24–48 V systems with margin. |
| Low clamping ratio (VC/VBR ≈ 1.45) | Minimizes overvoltage stress on downstream MOSFETs or controllers during fast transients. |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without baking; supports high-yield automated assembly. |
| Glass passivated junction | Ensures stable VBR and low leakage over temperature and lifetime; critical for long-term reliability in industrial environments. |
| RoHS-compliant E3 suffix | Meets global environmental regulations; suitable for commercial and industrial products sold in EU, US, and Asia markets. |
Applications
| Industrial Power Supply Input Protection | Automotive Body Control Module (BCM) Power Rail |
|---|---|
|
Use Scenario: Protecting 85 V-rated DC input stage of programmable logic controller (PLC) power module against load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Unidirectional TVS clamping transient overvoltage on main DC bus before it reaches buck converter IC and gate drivers. Use Value: Limits peak voltage to 137 V, staying 13 V below typical 150 V MOSFET drain-source rating, preventing catastrophic failure during 100 ms load dump events. |
Use Scenario: Safeguarding 12 V/24 V power input of BCM microcontroller and CAN transceiver from battery line transients during jump-start or alternator load dump. IC Role / Device Role / Timing Role: Fast-response voltage clamp placed upstream of LDO regulators and communication ICs to suppress sub-μs spikes. Use Value: Sub-1 ns response time and 137 V clamping prevent latch-up or reset corruption in automotive microcontrollers operating at 5 V or 3.3 V rails. |
| Telecom AC-DC Adapter Output Stage | Industrial Sensor Signal Line Protection |
|
Use Scenario: Secondary-side overvoltage suppression on 85 V output of telecom rectifier module exposed to lightning-induced surges on distribution lines. IC Role / Device Role / Timing Role: Final-stage TVS on isolated DC output, coordinated with primary-side MOV and secondary-side Y-cap filtering. Use Value: 600 W rating absorbs residual energy passing through upstream filters; 1.0 μA leakage avoids loading precision feedback circuits. |
Use Scenario: Protecting analog input of 4–20 mA current loop transmitter connected to field wiring subject to ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance (≈100 pF) unidirectional clamp on signal line referenced to local ground, limiting voltage to <150 V. Use Value: Prevents damage to op-amp input stages and ADC front-end while maintaining signal integrity due to minimal parasitic capacitance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ85A-M3/5B | Halogen-free, RoHS-compliant variant; identical electrical specs and SMB package; same VWM, VBR, VC, and PPPM. | No functional difference; selected where halogen-free material compliance is required for final product certification. | Direct drop-in replacement if halogen-free bill-of-materials is mandated; no layout or validation changes needed. |
| SMCJ85A-E3/5B | Same VWM (85 V), higher PPPM (1500 W), larger SMC (DO-214AB) package; VC = 137 V at 11.0 A; RθJA = 40 °C/W. | Used where higher surge energy (e.g., IEC 61000-4-5 Level 5) or improved thermal dissipation is required. | Select when 600 W is insufficient; requires PCB footprint change and thermal pad redesign due to larger SMC outline. |
Compared with SMBJ85-E3/5B, SMBJ85A-M3/5B offers identical protection performance with halogen-free construction, while SMCJ85A-E3/5B delivers 2.5× higher surge power in a physically larger package-enabling robustness upgrades without changing circuit topology but requiring mechanical redesign.
Availability
SMBJ85-E3/5B is available at Aetrix Electronics and suitable for industrial power supplies, automotive body control modules, telecom adapters, and sensor interface designs requiring stable component supply across multi-year production cycles.
Supply support for SMBJ85-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in space-constrained surface-mount applications, targeting industrial, automotive, and telecom systems where consistent clamping performance and AEC-Q101 readiness (in HE3 variants) are critical.
FAQ
What is the maximum clamping voltage of SMBJ85-E3/5B under standard test conditions?
The SMBJ85-E3/5B has a maximum clamping voltage (VC) of 137 V when subjected to its rated peak pulse current of 4.4 A using the 10/1000 μs waveform. This value is measured per IEC 61000-4-5 and ensures predictable overvoltage limiting for downstream components such as MOSFETs or controllers rated up to 150 V. The SMBJ85-E3/5B maintains this clamping performance across its specified operating temperature range.
Is SMBJ85-E3/5B suitable for automotive applications?
SMBJ85-E3/5B is RoHS-compliant and commercial-grade; it is not AEC-Q101 qualified. For automotive use, Vishay offers the SMBJ85HE3_B variant (with HE3 suffix), which is AEC-Q101 qualified and shares identical electrical characteristics. The SMBJ85-E3/5B itself is appropriate for non-safety-critical industrial or telecom applications where automotive qualification is not mandated.
How does the SMBJ85-E3/5B differ from bidirectional TVS diodes like SMBJ85CA?
The SMBJ85-E3/5B is unidirectional and functions only during reverse-bias transients, with polarity marked by a cathode band. In contrast, SMBJ85CA is bidirectional and clamps in both directions, making it suitable for AC lines or differential signal pairs. The SMBJ85-E3/5B offers lower leakage (<1.0 μA) and is preferred for DC power rails where polarity is fixed and leakage-sensitive circuits exist.
What PCB pad layout is recommended for optimal thermal performance of SMBJ85-E3/5B?
Vishay specifies mounting SMBJ85-E3/5B on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal to achieve rated 600 W pulse power. Smaller pads cause thermal derating-e.g., at 75 °C ambient, power capability drops to ~3.5 W continuous. The SMBJ85-E3/5B's RθJA of 100 °C/W assumes this minimum copper area; reducing pad size increases junction temperature and reduces surge survivability.
Can SMBJ85-E3/5B be used in parallel for higher surge current handling?
Parallel connection of SMBJ85-E3/5B devices is not recommended due to parameter variation (VBR tolerance ±5 %) causing current imbalance and potential single-device failure. For higher surge ratings, select a single higher-power device such as SMCJ85A-E3/5B (1500 W) or SMAJ85A-E3/5B (400 W), both in compatible surface-mount packages. The SMBJ85-E3/5B is optimized for standalone use in compact layouts.
SMBJ85-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 85V
- Voltage - Breakdown (Min):
- 94.4V
- Voltage - Clamping (Max) @ Ipp:
- 151V
- Current - Peak Pulse (10/1000µs):
- 4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ85-E3/5B FAQ
1.How can I place an order for SMBJ85-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ85-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ85-E3/5B reliable?
The price and inventory of SMBJ85-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ85-E3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ85-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ85-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ85-E3/5B?
SMBJ85-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ85-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ85-E3/5B?
For technical support, including SMBJ85-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ85-E3/5B requirements.
6.How does Aetrix verify that SMBJ85-E3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ85-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ85-E3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ85-E3/5B?
All SMBJ85-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ85-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ85-E3/5B part is unused and in its original packaging.
Return procedure for SMBJ85-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ85-E3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)