Vishay General Semiconductor - Diodes Division SMBJ8.5HE3/5B
- Part No.:
- SMBJ8.5HE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.5HE3/5B.pdf
- Description:
- TVS DIODE 8.5VWM 15.9VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:2,264
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Product details
Overview
SMBJ8.5HE3/5B from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 8.5 V stand-off voltage (VWM), 9.44–10.4 V breakdown voltage (VBR) at 1 mA, 14.4 V maximum clamping voltage (VC) at 41.7 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.
For engineers reviewing the SMBJ8.5HE3/5B datasheet, SMBJ8.5HE3/5B pinout, SMBJ8.5HE3/5B application, or SMBJ8.5HE3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and compliance with UL 497B surge protector classification.
Technical Context
This TVS diode operates as a clamping device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold, limiting transient energy to safe levels for downstream components. Its glass-passivated junction ensures stable leakage performance and fast response time (<1 ns), while the SMB package supports automated SMT placement and meets MSL Level 1 reflow requirements (260 °C peak).
The SMBJ8.5HE3/5B is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), has 5.0 W steady-state power dissipation at TA = 50 °C, and exhibits low incremental surge resistance - enabling effective suppression of ESD, lightning-induced surges, and inductive switching spikes in DC power rails and I/O lines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.5 V - maximum continuous reverse operating voltage before clamping begins; sets minimum system operating margin. |
| VBR (min/max) | 9.44 V / 10.4 V at IT = 1 mA - defines guaranteed avalanche onset window under standardized test conditions. |
| VC @ IPPM | 14.4 V at 41.7 A - clamped voltage during 10/1000 µs surge; determines worst-case stress on protected IC inputs. |
| PPPM | 600 W - peak transient power handling capability; validates suitability for IEC 61000-4-5 Level 3/4 surge immunity. |
| IR @ VWM | 20 µA max - reverse leakage at stand-off voltage; critical for low-power sensor and battery-backed circuits. |
| TJ max. | +150 °C - maximum junction temperature; enables operation in high-ambient industrial environments. |
| Package | SMB (DO-214AA) - 0.205" × 0.130" footprint with cathode band marking; compatible with standard SMT reflow profiles. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, unidirectional polarity with cathode band marking on one end. Dimensions: 5.21 mm × 3.30 mm × 2.13 mm (L × W × H); matte tin-plated leads compliant with J-STD-002 solderability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to ground or lower-potential rail; completes clamping loop during overvoltage events. |
| Cathode | Avalanche conduction terminal | Marked with band; connected to protected line (e.g., VCC, signal input); conducts when Vreverse > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD22 standards. |
| 600 W peak pulse power | Handles repetitive 10/1000 µs surges up to 0.01% duty cycle without degradation - suitable for industrial motor drive protection. |
| Glass-passivated junction | Ensures stable VBR tolerance and low IR drift over time and temperature - critical for long-life embedded systems. |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and standard reflow without baking; simplifies manufacturing logistics for high-volume SMT lines. |
| UL 497B recognized | Qualified as a Class B telecom protector (file E136766); meets safety agency requirements for field-deployable equipment. |
Applications
| Industrial Power Supply Protection | Automotive Body Control Module (BCM) |
|---|---|
|
Use Scenario: Suppresses load dump and alternator ripple transients on 12 V input rails feeding microcontrollers and CAN transceivers. IC Role / Device Role / Timing Role: Unidirectional clamping diode placed between VBAT and GND, triggered within <1 ns of overvoltage event. Use Value: Limits peak rail voltage to ≤14.4 V during 100 V/50 ms load dump, preventing latch-up or gate oxide damage in downstream PMICs. |
Use Scenario: Protects LIN bus transceiver inputs from ESD and cable discharge events in door module assemblies. IC Role / Device Role / Timing Role: Standoff-clamp TVS on LIN data line, with cathode tied to LIN_H and anode to GND. Use Value: Clamps 8 kV contact ESD (IEC 61000-4-2) to <15 V, preserving signal integrity and avoiding transceiver reset. |
| Consumer Appliance Motor Drive | Telecom PoE Interface |
|
Use Scenario: Shields MCU GPIOs and gate drivers from inductive kickback generated by brushed DC motor commutation. IC Role / Device Role / Timing Role: Local TVS on motor driver enable line and feedback sense node, mounted adjacent to connector. Use Value: Absorbs 600 W transient energy without failure, maintaining functional safety during repeated motor stall events. |
Use Scenario: Safeguards Ethernet PHY and PD controller pins against surge coupling from PoE power pairs (IEEE 802.3af/at). IC Role / Device Role / Timing Role: Secondary-level TVS on data pair lines (TD+, RD−), placed after common-mode choke. Use Value: Limits coupled surge to <14.4 V at 41.7 A, ensuring PHY remains operational during 10/700 µs telecom surge tests. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.5A-E3/5B | Commercial-grade version; not AEC-Q101 qualified; same VWM, VBR, VC, and package. | Lacks automotive qualification; unsuitable for under-hood or safety-critical modules. | Select when cost-sensitive industrial designs do not require automotive reliability validation. |
| SMAJ8.5AHE3/A | Smaller SMA (DO-214AC) package; 400 W PPPM rating; higher RθJA (140 °C/W); identical electrical specs except lower surge capacity. | Lower power handling limits use to sub-400 W surge environments; reduced thermal mass affects repetitive surge endurance. | Choose only if board space is constrained and peak surge energy is confirmed ≤400 W. |
Compared with SMBJ8.5HE3/5B, the SMBJ8.5A-E3/5B offers identical clamping performance but lacks automotive qualification, while the SMAJ8.5AHE3/A trades 33% lower surge power and higher thermal resistance for smaller footprint - neither is pin-compatible due to differing package outlines and thermal pad requirements.
Availability
SMBJ8.5HE3/5B is available at Aetrix Electronics and suitable for industrial power supply protection, automotive body control modules, consumer appliance motor drives, and telecom PoE interface designs requiring stable component supply with AEC-Q101 assurance and UL recognition.
Supply support for SMBJ8.5HE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for robust transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where high-energy surge immunity and long-term parametric stability are mandatory.
FAQ
What is the maximum clamping voltage of SMBJ8.5HE3/5B at its rated peak pulse current?
The SMBJ8.5HE3/5B has a maximum clamping voltage (VC) of 14.4 V at its specified peak pulse current (IPPM) of 41.7 A using the 10/1000 µs waveform. This value is measured under standardized test conditions per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ8.5HE3/5B maintains this clamping performance across its full operating temperature range.
Is SMBJ8.5HE3/5B suitable for automotive applications?
Yes, SMBJ8.5HE3/5B is AEC-Q101 qualified, meaning it has passed stress tests including high-temperature reverse bias, temperature cycling, and ESD per JESD22 standards. Its construction - glass-passivated junction, MSL Level 1 rating, and UL 497B recognition - supports deployment in automotive body control modules, infotainment power rails, and sensor interfaces. The "HE3" suffix explicitly denotes AEC-Q101 compliance for the SMBJ8.5HE3/5B.
What does the "5B" suffix indicate in SMBJ8.5HE3/5B?
The "5B" suffix in SMBJ8.5HE3/5B specifies the packaging format: 13-inch diameter plastic tape and reel containing 3200 units. This differs from "52", which denotes 7-inch reels of 750 units. The "5B" configuration supports high-volume SMT assembly lines requiring extended reel life and reduced changeover frequency. All electrical and mechanical specifications remain identical across both packaging variants of the SMBJ8.5HE3/5B.
How does SMBJ8.5HE3/5B compare to bidirectional TVS diodes like SMBJ8.5CA?
The SMBJ8.5HE3/5B is unidirectional and intended for DC line protection where polarity is fixed (e.g., VCC-to-GND), whereas SMBJ8.5CA is bidirectional and suited for AC or differential signal lines (e.g., RS-485). Their breakdown voltages differ: SMBJ8.5HE3/5B has VBR = 9.44–10.4 V (unidirectional), while SMBJ8.5CA has symmetric VBR in both directions. Using SMBJ8.5HE3/5B in place of SMBJ8.5CA would cause forward conduction on negative transients - making them functionally incompatible without circuit redesign.
What is the thermal resistance of SMBJ8.5HE3/5B, and how does it affect layout design?
The SMBJ8.5HE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimal PCB copper; increasing pad area or adding internal ground planes reduces RθJA significantly. For reliable operation at full 5.0 W steady-state dissipation, designers must ensure adequate copper pour and avoid enclosing the SMBJ8.5HE3/5B in thermally isolated zones.
SMBJ8.5HE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.44V
- Voltage - Clamping (Max) @ Ipp:
- 15.9V
- Current - Peak Pulse (10/1000µs):
- 37.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ8.5HE3/5B FAQ
1.How can I place an order for SMBJ8.5HE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.5HE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.5HE3/5B reliable?
The price and inventory of SMBJ8.5HE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.5HE3/5B is usually 5 days.
3.What payment methods are accepted for SMBJ8.5HE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.5HE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.5HE3/5B?
SMBJ8.5HE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.5HE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.5HE3/5B?
For technical support, including SMBJ8.5HE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.5HE3/5B requirements.
6.How does Aetrix verify that SMBJ8.5HE3/5B is sourced from the original manufacturer or authorized distributors?
All SMBJ8.5HE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.5HE3/5B meets industry standards.
7.What is the process for return or replacement of SMBJ8.5HE3/5B?
All SMBJ8.5HE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.5HE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.5HE3/5B part is unused and in its original packaging.
Return procedure for SMBJ8.5HE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.5HE3/5B Tags

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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