Vishay General Semiconductor - Diodes Division SMBJ9.0AHE3_A/I
- Part No.:
- SMBJ9.0AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ9.0AHE3_A/I.pdf
- Description:
- TVS DIODE 9VWM 15.4VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SMBJ9.0AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed to protect sensitive electronics against voltage transients induced by inductive load switching and lightning surges. It features a 9.0 V stand-off voltage (VWM), 10.0–11.1 V breakdown voltage (VBR) at 1 mA, 15.4 V maximum clamping voltage (VC) at 39.0 A peak pulse current (IPPM), and 600 W peak pulse power capability with a 10/1000 µs waveform - deployed on ICs, MOSFETs, and sensor signal lines in industrial and automotive systems.
For engineers reviewing the SMBJ9.0AHE3_A/I datasheet, SMBJ9.0AHE3_A/I pinout, SMBJ9.0AHE3_A/I application, or SMBJ9.0AHE3_A/I equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), junction temperature range (–55 to +150 °C), and precise packaging details for reliable circuit protection design and BOM validation.
Technical Context
The SMBJ9.0AHE3_A/I operates as a unidirectional avalanche diode, conducting only when reverse voltage exceeds its breakdown threshold (VBR = 10.0–11.1 V), thereby clamping transient energy to ≤15.4 V at 39.0 A. Its glass-passivated junction ensures stable performance under repetitive surge conditions with 0.01% duty cycle.
Designed for surface-mount assembly on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, it achieves 5.0 W steady-state power dissipation at TA = 50 °C and supports peak forward surge current (IFSM) up to 100 A (8.3 ms half-sine), meeting J-STD-020 MSL Level 1 reflow requirements (260 °C peak).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 9.0 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC signal line operating margin. |
| VBR (min/max) | 10.0 V / 11.1 V at IT = 1.0 mA - Confirmed breakdown range ensuring predictable turn-on during transients. |
| VC @ IPPM | 15.4 V at 39.0 A - Clamped voltage under 10/1000 µs surge; determines protected IC's maximum stress level. |
| PPPM | 600 W - Peak transient energy absorption capacity; validates suitability for IEC 61000-4-5 Level 3/4 surge immunity. |
| ID @ VWM | 10 µA - Reverse leakage at rated stand-off voltage; low enough to avoid signal integrity degradation in high-impedance circuits. |
| TJ max. | +150 °C - Maximum junction temperature; enables operation in under-hood automotive or industrial ambient environments. |
| RθJA | 100 °C/W - Thermal resistance junction-to-ambient; informs PCB copper pad sizing and layout for thermal reliability. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity indicated by cathode band; unidirectional configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction path (cathode-biased during clamping) | Connected to protected circuit ground or low-side reference; completes clamping path during overvoltage events. |
| Cathode | Reverse-biased terminal during normal operation | Connected to protected line (e.g., power rail or signal); initiates avalanche conduction when V > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance - suitable for engine control, ADAS, and infotainment modules. |
| 600 W peak pulse power (10/1000 µs) | Enables robust protection against IEC 61000-4-5 surge waveforms without derating in standard PCB layouts. |
| Glass passivated chip junction | Ensures long-term stability of VBR and leakage under humidity, thermal stress, and repeated surge events. |
| MSL Level 1 (260 °C peak) | Supports single-reflow assembly without moisture sensitivity concerns - eliminates bake requirements pre-SMT. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (<1 ns response), critical for protecting high-speed logic and analog sensors. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp surges above 9.0 V. Use Value: Limits peak voltage to ≤15.4 V during 39 A transients, preventing damage to microcontrollers and CAN transceivers. |
Use Scenario: Shielding 4–20 mA or 0–10 V analog sensor outputs in factory automation PLCs. IC Role / Device Role / Timing Role: Low-leakage (10 µA) TVS mounted across signal and return lines to suppress ESD and inductive kickback. Use Value: Maintains signal fidelity with minimal DC offset while clamping fast transients before they reach ADC inputs. |
| Telecom Interface Port Protection | Consumer Device USB/Power Input Protection |
|
Use Scenario: Safeguarding Ethernet PHY or RS-485 transceivers connected to outdoor cabling. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing lightning-induced surges on differential pairs or common-mode lines. Use Value: Withstands 600 W pulses without degradation, preserving data integrity and reducing field failure rates. |
Use Scenario: Securing USB-C or barrel jack inputs in smart home hubs and portable chargers. IC Role / Device Role / Timing Role: Primary overvoltage clamp on input rails upstream of DC-DC converters and LDOs. Use Value: Fast response (<1 ns) and low clamping voltage prevent latch-up or permanent damage to downstream PMICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ9.0A-E3/52 | Commercial-grade (non-AEC-Q101), same VWM/VBR/VC specs, identical SMB package and pinout. | Lacks automotive qualification; suitable for consumer/industrial designs where AEC compliance is not mandated. | Select when cost sensitivity outweighs automotive reliability requirements and lifecycle assurance. |
| SAC9.0 | Same 9.0 V VWM but lower PPPM (400 W), higher VC (17.5 V), and SOD-123FL package (smaller footprint, higher RθJA). | Lower surge handling limits use to less demanding environments; smaller size trades thermal performance for space savings. | Choose only if board space is constrained and surge threat level is below IEC 61000-4-5 Level 2. |
Compared with SMBJ9.0AHE3_A/I, the SMBJ9.0A-E3/52 offers identical electrical protection in commercial applications but omits AEC-Q101 validation, while SAC9.0 sacrifices 33% peak power rating and thermal robustness for miniaturization - making SMBJ9.0AHE3_A/I the optimal choice for automotive and high-reliability industrial deployments.
Availability
SMBJ9.0AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and telecom infrastructure requiring stable component supply with AEC-Q101 traceability and long-term production continuity.
Supply support for SMBJ9.0AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in harsh environments, targeting automotive, industrial, and communications systems where robustness, consistency, and qualification compliance are mandatory.
FAQ
What is the clamping voltage of SMBJ9.0AHE3_A/I at its rated peak pulse current?
The SMBJ9.0AHE3_A/I has a maximum clamping voltage (VC) of 15.4 V at its specified peak pulse current (IPPM) of 39.0 A under a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 standards and defines the upper voltage limit imposed on protected circuitry during surge events - a critical parameter for ensuring downstream ICs remain within absolute maximum ratings. The SMBJ9.0AHE3_A/I maintains this clamping performance across its full operating temperature range.
Is SMBJ9.0AHE3_A/I qualified for automotive applications?
Yes, SMBJ9.0AHE3_A/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in the 88392 datasheet. This qualification covers stress tests including high-temperature reverse bias, temperature cycling, and surge endurance - validating its suitability for under-hood and cabin electronics such as body control modules, lighting drivers, and ADAS sensor interfaces. The SMBJ9.0AHE3_A/I meets automotive-grade reliability requirements without derating.
What is the thermal resistance and how does it affect PCB layout for SMBJ9.0AHE3_A/I?
The SMBJ9.0AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value directly impacts safe power dissipation: at 5.0 W steady-state rating, junction temperature rise reaches ~500 °C without adequate copper - so designers must use generous thermal pads and internal planes to maintain TJ ≤ 150 °C. The SMBJ9.0AHE3_A/I's RθJL of 20 °C/W further supports heat transfer through leads into PCB copper.
How does the leakage current of SMBJ9.0AHE3_A/I impact high-impedance circuits?
SMBJ9.0AHE3_A/I exhibits a maximum reverse leakage current (ID) of 10 µA at its 9.0 V stand-off voltage (VWM), measured at TA = 25 °C. This low leakage ensures minimal loading on high-impedance nodes such as precision sensor references, op-amp inputs, or battery-monitoring dividers - avoiding measurement error or drift. At elevated temperatures (e.g., +125 °C), ID remains well below 100 µA, preserving accuracy in automotive and industrial applications where the SMBJ9.0AHE3_A/I is commonly deployed.
Can SMBJ9.0AHE3_A/I be used in bidirectional protection configurations?
No, SMBJ9.0AHE3_A/I is a unidirectional TVS diode, identifiable by its cathode band marking and specified parameters (e.g., VBR only defined for reverse polarity). For bidirectional protection, Vishay offers the SMBJ9.0CA variant - which provides symmetrical clamping in both polarities and double the leakage limit (20 µA) for VWM ≤ 10 V. Using SMBJ9.0AHE3_A/I in bidirectional roles risks forward conduction during negative transients and invalidates its published VC and IPPM ratings.
SMBJ9.0AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 9V
- Voltage - Breakdown (Min):
- 10V
- Voltage - Clamping (Max) @ Ipp:
- 15.4V
- Current - Peak Pulse (10/1000µs):
- 39A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ9.0AHE3_A/I FAQ
1.How can I place an order for SMBJ9.0AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ9.0AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ9.0AHE3_A/I reliable?
The price and inventory of SMBJ9.0AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ9.0AHE3_A/I is usually 5 days.
3.What payment methods are accepted for SMBJ9.0AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ9.0AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ9.0AHE3_A/I?
SMBJ9.0AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ9.0AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ9.0AHE3_A/I?
For technical support, including SMBJ9.0AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ9.0AHE3_A/I requirements.
6.How does Aetrix verify that SMBJ9.0AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All SMBJ9.0AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ9.0AHE3_A/I meets industry standards.
7.What is the process for return or replacement of SMBJ9.0AHE3_A/I?
All SMBJ9.0AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ9.0AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ9.0AHE3_A/I part is unused and in its original packaging.
Return procedure for SMBJ9.0AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ9.0AHE3_A/I Tags

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DESD3V3E1BL-7B
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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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