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Vishay General Semiconductor - Diodes Division SMBJ9.0CD-M3/I
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- Part No.:
- SMBJ9.0CD-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ9.0CD-M3/I.pdf
- Description:
- TVS DIODE 9VWM 15.1VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:4,112
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Product details
Overview
SMBJ9.0CD-M3/I from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on signal and power lines. It features a 9.0 V stand-off voltage (VWM), 10.2–10.9 V breakdown voltage (VBR) at 1 mA, 15.1 V maximum clamping voltage (VC) at 5.0 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, sensor interfaces, and industrial I/O circuits.
For engineers reviewing the SMBJ9.0CD-M3/I datasheet, SMBJ9.0CD-M3/I pinout, SMBJ9.0CD-M3/I application, or SMBJ9.0CD-M3/I equivalent, key selection criteria include bidirectional polarity, ±3.5 % VBR tolerance, low leakage (<5 μA at VWM), MSL Level 1 moisture sensitivity, and halogen-free RoHS-compliant construction suitable for automated SMT assembly.
Technical Context
This device operates as a voltage-clamping protection element in both forward and reverse directions, leveraging avalanche breakdown to divert transient energy away from sensitive downstream circuitry. Its bidirectional symmetry ensures identical electrical characteristics in either polarity, eliminating orientation concerns during PCB layout.
The SMBJ9.0CD-M3/I delivers stable clamping performance under repetitive surge conditions up to 0.01 % duty cycle, with thermal resistance of 125 °C/W (junction-to-ambient, mounted on minimum pad) and 20 °C/W (junction-to-mount), enabling reliable operation within -55 °C to +150 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 9.0 V - Maximum continuous reverse stand-off voltage before significant conduction begins; defines safe operating margin below clamping threshold. |
| VBR min/max | 10.2 V / 10.9 V at 1 mA - Tight ±3.5 % breakdown tolerance ensures predictable turn-on across production lots. |
| VC @ IPPM | 15.1 V at 5.0 A - Clamping voltage during 10/1000 μs surge; limits stress on protected ICs to safe levels. |
| PPPM | 600 W - Peak pulse power handling capability per 10/1000 μs waveform; supports robust ESD and lightning surge immunity. |
| ID @ VWM | <5 μA - Ultra-low reverse leakage preserves signal integrity and minimizes standby power loss in high-impedance nodes. |
| Package | SMB (DO-214AA) - Standardized surface-mount outline with 2.20 mm max height and 5.59 mm body length; compatible with J-STD-020 MSL Level 1 reflow. |
| Polarity | Bidirectional - No cathode band; symmetrical I-V curve enables use without orientation constraints on PCB. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, bidirectional configuration with no polarity marking. Terminals are matte tin-plated leads, solderable per J-STD-002 and JESD 22-B102, qualified to JESD 201 Class 2 whisker test.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Transient current path | Both terminals function identically; current flows bidirectionally during overvoltage events - no directional mounting required. |
| Cathode Band (absent) | Polarity indicator | Not present - confirms bidirectional design; eliminates risk of incorrect orientation during placement. |
Key Features
| Feature | Design Value |
|---|---|
| ±3.5 % VBR tolerance | Enables precise, repeatable clamping thresholds across manufacturing batches - critical for consistent system-level surge compliance. |
| 600 W peak pulse power (10/1000 μs) | Supports IEC 61000-4-5 Level 4 (4 kV line-to-line) surge testing without degradation when properly laid out. |
| MSL Level 1 rating | Allows unlimited floor life and standard reflow profile usage (peak 260 °C), simplifying SMT integration and reducing process risk. |
| Halogen-free, RoHS-compliant (M3 suffix) | Fulfills environmental compliance requirements for industrial and telecom equipment sold in EU, China, and North America. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast transients - improves protection margin for sub-10 ns edge-rate noise sources. |
Applications
| Industrial Sensor Interface Protection | Automotive Body Control Module I/O |
|---|---|
Use Scenario: Protecting analog sensor outputs (e.g., pressure, temperature) from load dump and inductive switching transients in factory automation PLCs. IC Role / Device Role / Timing Role: Bidirectional clamping element placed directly at connector entry point to shunt surge energy before reaching ADC front-end or op-amp buffer. Use Value: Prevents latch-up or permanent damage to 12-bit SAR ADCs by limiting input voltage to ≤15.1 V during 10/1000 μs surges up to 5 A. |
Use Scenario: Safeguarding LIN bus transceivers and GPIO pins in BCMs exposed to battery voltage spikes and relay coil kickback. IC Role / Device Role / Timing Role: Low-capacitance TVS placed between LIN data line and ground to suppress common-mode transients while preserving signal rise/fall times. Use Value: Maintains LIN physical layer timing integrity (≤20 ns propagation delay impact) due to sub-100 pF junction capacitance at 0 V bias. |
| Telecom Power Supply Input Stage | Consumer USB-C Port ESD Protection |
Use Scenario: Secondary-side DC input protection for isolated AC/DC adapters subjected to conducted surges per IEC 61000-4-5. IC Role / Device Role / Timing Role: Primary clamping device across +12 V rail and GND, coordinated with upstream MOV and fuse for staged overvoltage defense. Use Value: Absorbs 600 W transient energy without thermal runaway, enabling compact heatsink-free design in space-constrained wall adapters. |
Use Scenario: Board-level ESD protection for USB-C CC and VBUS lines in portable audio devices and docking stations. IC Role / Device Role / Timing Role: Bidirectional TVS deployed in parallel with USB-C controller to clamp ±15 kV contact discharge per IEC 61000-4-2. Use Value: Achieves <500 ps response time and <15.1 V clamping, preventing controller latch-up while meeting USB-IF ESD certification requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ9.0CA-E3/52 | Same VWM (9.0 V), VBR (10.2–10.9 V), and PPPM (600 W); differs in packaging (tape-and-reel vs. bulk) and MSL rating (Level 1 vs. Level 2a). | Requires humidity-controlled storage and shorter floor life; less suitable for high-volume automated SMT without dry pack management. | Select SMBJ9.0CA-E3/52 only if legacy inventory or specific distributor availability dictates - SMBJ9.0CD-M3/I offers superior manufacturability. |
| 1.5SMC9.0CA | Higher package thermal resistance (RθJA = 150 °C/W vs. 125 °C/W); same VWM/VBR but lower VC (14.5 V) and higher IPPM (5.5 A) at same PPPM. | Less effective in thermally constrained layouts; requires larger copper area to maintain TJ < 150 °C under repeated surges. | Prefer SMBJ9.0CD-M3/I for dense PCBs or applications requiring tighter thermal margins - its SMB footprint enables better heat spreading than SMC. |
Compared with SMBJ9.0CA-E3/52 and 1.5SMC9.0CA, the SMBJ9.0CD-M3/I provides optimal balance of MSL Level 1 reliability, standardized SMB footprint, and verified 5.0 A clamping performance - making it the preferred choice for new industrial and automotive designs requiring zero rework risk and full RoHS/halogen-free compliance.
Availability
SMBJ9.0CD-M3/I is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive body control modules, and telecom power supply input stages requiring stable component supply, long-term lifecycle support, and guaranteed RoHS/halogen-free compliance.
Supply support for SMBJ9.0CD-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for demanding industrial, automotive, and computing applications.
The SMBJ series was engineered specifically for robust, surface-mount transient suppression in harsh environments - emphasizing tight VBR tolerance, low leakage, and MSL-compliant packaging to meet Tier-1 automotive and industrial equipment requirements.
FAQ
What is the polarity configuration of SMBJ9.0CD-M3/I?
The SMBJ9.0CD-M3/I is a bidirectional TVS diode with symmetrical anode/cathode terminals and no cathode band marking. Its I-V characteristics are identical in both directions, allowing placement without orientation constraints - ideal for differential signal lines or unidirectional systems where polarity reversal risk exists.
Does SMBJ9.0CD-M3/I meet IEC 61000-4-2 and IEC 61000-4-5 standards?
The SMBJ9.0CD-M3/I itself is not certified to IEC standards, but its 600 W peak pulse power (10/1000 μs), 15.1 V clamping voltage at 5.0 A, and sub-5 μA leakage enable system-level compliance with IEC 61000-4-2 (±15 kV contact) and IEC 61000-4-5 (4 kV line-to-line) when implemented with proper PCB layout, grounding, and coordination with upstream protection elements.
What is the maximum operating temperature for SMBJ9.0CD-M3/I?
The SMBJ9.0CD-M3/I has a maximum junction temperature (TJ max.) of +150 °C and operates across -55 °C to +150 °C. At ambient temperatures above 25 °C, power dissipation must be derated per Figure 2 in the Vishay datasheet (Document Number: 87606), with full 1.0 W rating only at TA = 25 °C and reduced capability at elevated board temperatures.
How does the M3 suffix affect SMBJ9.0CD-M3/I's compliance and reliability?
The M3 suffix on SMBJ9.0CD-M3/I indicates halogen-free, RoHS-compliant construction, matte tin-plated leads qualified to JESD 201 Class 2 whisker resistance, and adherence to Vishay's industrial-grade reliability standards - distinguishing it from non-M3 variants that may lack full environmental compliance or extended thermal cycling validation.
Can SMBJ9.0CD-M3/I replace SMBJ9.0A-M3/I in an existing design?
No - SMBJ9.0A-M3/I is unidirectional with a cathode band and asymmetric clamping behavior, whereas SMBJ9.0CD-M3/I is bidirectional with no polarity marking. Substitution would compromise protection on reverse-polarity transients unless the circuit explicitly relies on unidirectional blocking; always verify system-level surge paths before interchange.
SMBJ9.0CD-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 9V
- Voltage - Breakdown (Min):
- 10.2V
- Voltage - Clamping (Max) @ Ipp:
- 15.1V
- Current - Peak Pulse (10/1000µs):
- 39.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
SMBJ9.0CD-M3/I FAQ
1.How can I place an order for SMBJ9.0CD-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ9.0CD-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ9.0CD-M3/I reliable?
The price and inventory of SMBJ9.0CD-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ9.0CD-M3/I is usually 5 days.
3.What payment methods are accepted for SMBJ9.0CD-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ9.0CD-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ9.0CD-M3/I?
SMBJ9.0CD-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ9.0CD-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ9.0CD-M3/I?
For technical support, including SMBJ9.0CD-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ9.0CD-M3/I requirements.
6.How does Aetrix verify that SMBJ9.0CD-M3/I is sourced from the original manufacturer or authorized distributors?
All SMBJ9.0CD-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ9.0CD-M3/I meets industry standards.
7.What is the process for return or replacement of SMBJ9.0CD-M3/I?
All SMBJ9.0CD-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ9.0CD-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ9.0CD-M3/I part is unused and in its original packaging.
Return procedure for SMBJ9.0CD-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ9.0CD-M3/I Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
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