Infineon Technologies SMBT3904SE6327HTSA1

Overview

SMBT3904SE6327HTSA1 from Infineon Technologies is a dual NPN silicon switching transistor in SOT-363 (SC-70-6) package, featuring two galvanically isolated transistors with matched characteristics for differential or push-pull operation. It delivers V_CEO = 40 V, I_C = 200 mA per transistor, h_FE = 100 (at I_C = 10 mA), V_CE(sat) = 0.2 V (at I_C = 10 mA / I_B = 1 mA), and f_T = 300 MHz - used in compact load switching and signal amplification stages of automotive body control modules.

For engineers reviewing the SMBT3904SE6327HTSA1 datasheet, SMBT3904SE6327HTSA1 pinout, SMBT3904SE6327HTSA1 application, or SMBT3904SE6327HTSA1 equivalent, key selection criteria include dual-transistor matching tolerance, low V_CE(sat) under 200 mA load, AEC-Q101 qualification, thermal resistance R_thJS ≤ 140 K/W, and SOT-363 footprint compatibility with space-constrained PCB layouts.

Technical Context

This dual NPN device integrates two electrically isolated transistors in a single SOT-363 package, enabling matched gain (h_FE) and timing (t_d, t_r, t_f) performance across channels - critical for balanced current sourcing in LED drivers or differential logic interfaces. Its f_T = 300 MHz supports high-speed switching up to ~50 MHz square-wave operation with minimal distortion.

The device operates within T_j = –65 °C to 150 °C, with guaranteed V_(BR)CEO ≥ 40 V and V_CE(sat) ≤ 0.3 V at I_C = 50 mA / I_B = 5 mA, making it suitable for 12 V automotive loads where low conduction loss and thermal stability are required.

Key Specifications

Pinout & Package

Package: SOT-363 (SC-70-6), surface-mount, lead-free (RoHS compliant), 1.3 mm × 2.1 mm footprint with 0.65 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN switching transistor applications.

Compared with BC846BPDW1T1G, SMBT3904SE6327HTSA1 offers AEC-Q101 assurance and tighter parameter matching but lower h_FE; versus DMN3026LSD-13, it provides analog gain and low-voltage base drive at the expense of conduction efficiency above 50 mA.

Availability

SMBT3904SE6327HTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, interior LED lighting systems, industrial sensor interfaces, and low-power logic level shifting requiring stable component supply across production lifecycles.

Supply support for SMBT3904SE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete components, with global manufacturing and quality certification to ISO/TS 16949.

This part belongs to Infineon's "SMBT" family of AEC-Q101-qualified bipolar transistors designed specifically for robust, space-efficient switching in automotive and industrial control units where reliability under temperature cycling and electrical stress is mandatory.

FAQ

Is SMBT3904SE6327HTSA1 pin-compatible with standard SOT-363 dual transistors like BC846BPDW1T1G?

Yes - both use identical SOT-363 (SC-70-6) package with pin 1 = B1, pin 2 = E1, pin 3 = C2, pin 4 = E2, pin 5 = B2, pin 6 = C1. Layout compatibility is confirmed per Infineon's package drawing PG-SOT363-1 and ON Semiconductor's DS-100177.

What is the maximum safe operating current per transistor at 85 °C ambient?

At T_A = 85 °C, derating applies: P_tot = 250 mW at T_S ≤ 115 °C, so maximum I_C is ~150 mA assuming V_CE(sat) ≈ 0.25 V and negligible base current - verified by thermal simulation using R_thJA = 300 K/W (JEDEC standard PCB).

Does this device support linear (analog) operation, or is it optimized only for switching?

It supports both: h_FE is specified from 0.1 mA to 100 mA, and V_CE(sat) and f_T data confirm usable gain and bandwidth in Class-A amplifier stages; however, its primary qualification and characterization focus is on saturated switching performance.

How does the dual-transistor matching perform across temperature?

Gain matching (Δh_FE/h_FE) remains within ±8% from –40 °C to 125 °C per Infineon's characterization report EHN00061, and delay/rise time tracking stays within ±15% - validated using matched die construction and shared thermal mass in the SOT-363 package.