Vishay General Semiconductor - Diodes Division SMC3K51CAHM3_A/I
- Part No.:
- SMC3K51CAHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMC3K51CAHM3_A/I.pdf
- Description:
- 3KW, 51V 5%,BIDIR,SMC TVS
- Quantity:
- Payment:

- Shipping:

Inventory:4,592
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Product details
Overview
SMC3K51CAHM3_A from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) in SMC (DO-214AB) package, designed for high-energy surge protection with 3000 W peak pulse power (10/1000 μs), 51 V stand-off voltage (VWM), and 82.4 V clamping voltage (VC) at 36.4 A IPPM. It protects MOSFETs, ICs, and sensor signal lines in automotive power systems against ISO 7637-2 and ISO 16750-2 transients.
For engineers reviewing the SMC3K51CAHM3_A datasheet, SMC3K51CAHM3_A pinout, SMC3K51CAHM3_A application, or SMC3K51CAHM3_A equivalent, key selection criteria include bidirectional clamping capability, AEC-Q101 qualification, 175 °C junction temperature rating, UL 497B safety recognition, and compliance with IEC 61000-4-2 ESD (30 kV contact/air).
Technical Context
This TVS diode operates as a voltage-clamped shunt protector with low incremental surge resistance and sub-nanosecond response time. Its bidirectional architecture enables symmetric clamping across both polarities without polarity marking, supporting robust protection of differential or AC-coupled signal paths.
It meets automotive-grade reliability requirements including MSL Level 1 reflow compatibility (260 °C peak), JESD201 Class 2 whisker resistance, and halogen-free/RoHS-compliant construction. Thermal performance is characterized by RthJA = 90 °C/W and RthJM = 4.0 °C/W, enabling stable operation under repetitive surge conditions up to TJ = 175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 51 V - Maximum continuous reverse operating voltage before clamping begins; defines safe working margin for 48 V automotive subsystems. |
| VBR (min/max) | 56.7 V / 62.7 V - Breakdown voltage range at 1 mA test current; ensures reliable turn-on above system overvoltage thresholds. |
| VC @ IPPM | 82.4 V at 36.4 A - Clamping voltage during 10/1000 μs surge; limits downstream device stress to <83 V under worst-case 3 kW transient. |
| PPPM | 3000 W - Peak pulse power handling per 10/1000 μs waveform; supports load dump and inductive switching events in 12–48 V systems. |
| ESD Rating | 30 kV (HBM, contact & air) - Withstands industrial and automotive ESD events without degradation, per IEC 61000-4-2. |
| TJ max. | 175 °C - Maximum junction temperature; enables deployment in engine bay and powertrain modules with minimal derating. |
| AEC-Q101 | Qualified - Validated for automotive electronic components per stress test standard, including HTOL, TCT, and ESD. |
Pinout & Package
Package: SMC (DO-214AB), surface-mount, matte tin-plated leads, RoHS-compliant, halogen-free, MSL Level 1 (260 °C peak reflow).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (unmarked end) | Surge current return path | Bidirectional design means either terminal serves as cathode depending on polarity of transient; no polarity marking required. |
| Anode (unmarked end) | Surge current injection point | Identical physical terminal as cathode; symmetrical structure enables identical clamping in both directions. |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC signals, differential buses, or ungrounded circuits without polarity concerns. |
| 30 kW surge rating (8/20 μs) | Supports high-current lightning-induced surges per IEC 61000-4-5, exceeding typical automotive load dump requirements. |
| Low clamping ratio (VC/VWM = 1.62) | Minimizes voltage overshoot during transients, reducing risk of latch-up or gate oxide damage in protected MOSFETs/ICs. |
| UL 497B recognition (E136766) | Validates safety compliance for telecom and industrial interface protection, easing regulatory certification of end equipment. |
| Junction capacitance < 200 pF | Preserves signal integrity on data lines (e.g., CAN FD, LIN) without bandwidth degradation or EMI coupling. |
Applications
| Automotive Power Distribution | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 48 V DC-DC converter inputs and outputs against load dump pulses (ISO 16750-2 Pulse b) and inductive switching spikes. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed directly at power rail entry points to clamp voltage excursions below 85 V. Use Value: Prevents overvoltage failure of buck controllers and gate drivers during battery disconnection events, ensuring ASIL-B system continuity. |
Use Scenario: Safeguarding analog output lines (4–20 mA) and digital sensor interfaces (I²C, SPI) in factory automation PLC modules. IC Role / Device Role / Timing Role: Low-capacitance TVS placed adjacent to connector pins to absorb ESD and fast transients before reaching precision ADCs or microcontrollers. Use Value: Maintains measurement accuracy and prevents false triggering by limiting transient-induced offset errors to <0.5% full-scale. |
| Telecom Power Feeds | Automotive CAN/LIN Bus Nodes |
|
Use Scenario: Protecting PoE-powered equipment (IEEE 802.3af/at) front-end rectifiers and DC/DC stages from induced surges on long Ethernet runs. IC Role / Device Role / Timing Role: Bidirectional TVS bridging +V and -V rails to suppress common-mode surges while preserving DC bias integrity. Use Value: Enables uninterrupted operation during 1 kV/0.5 J surges per IEC 61000-4-5, avoiding brownouts or latch-up in powered devices. |
Use Scenario: Shielding CAN FD transceivers and LIN bus drivers from battery reverse connection, jump-start spikes, and alternator ripple. IC Role / Device Role / Timing Role: Low-capacitance (≈150 pF) shunt device placed between CANH/CANL and ground to clamp differential and common-mode transients. Use Value: Preserves bit error rate <10⁻¹² at 5 Mbps by limiting bus voltage excursion to ±85 V without signal distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ51CA | Same VWM (51 V) and bidirectional configuration, but lower PPPM (400 W) and higher VC (93.6 V); SMA package (smaller footprint, lower thermal mass). | Limited to low-energy transients (e.g., board-level ESD); unsuitable for ISO 16750-2 load dump or ISO 7637-2 Pulse 1. | Select when space-constrained PCB layout prioritizes size over surge energy handling. |
| 1.5KE51CA | Higher PPPM (1500 W), axial-leaded DO-201AD package, higher RthJA (~50 °C/W), no AEC-Q101 or MSL Level 1 rating. | Restricted to non-automotive industrial use; requires through-hole assembly and lacks automotive process validation. | Choose only for cost-sensitive, non-automotive applications where reflow compatibility and qualification are not required. |
Compared with SMAJ51CA and 1.5KE51CA, SMC3K51CAHM3_A delivers 7.5× higher surge power, AEC-Q101 qualification, and surface-mount reliability-making it the sole option for automotive power rail protection requiring ISO 16750-2 compliance and zero-layout redesign.
Availability
SMC3K51CAHM3_A is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interface protection, telecom power feeds, and automotive CAN/LIN bus nodes requiring stable component supply, long-term lifecycle support, and AEC-Q101 traceability.
Supply support for SMC3K51CAHM3_A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The SMC3KxxCAHM3_A series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for automotive-grade transient suppression in 12 V–48 V systems with stringent AEC-Q101, ISO, and UL requirements.
FAQ
What is the maximum clamping voltage of SMC3K51CAHM3_A under a 10/1000 μs surge?
The SMC3K51CAHM3_A clamps to 82.4 V at its rated peak pulse current of 36.4 A under a 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 and confirmed in the Vishay datasheet (Document Number: 98241, Rev. 09-Jan-2024). The clamping voltage ensures protected circuitry remains below critical overvoltage thresholds during standardized surge events.
Is SMC3K51CAHM3_A qualified for automotive applications?
Yes, SMC3K51CAHM3_A is AEC-Q101 qualified and meets MSL Level 1 per J-STD-020, with a maximum peak reflow temperature of 260 °C. It is explicitly validated for automotive power systems, including compliance with ISO 7637-2 (Pulse 1, 2a, 3a, 3b) and ISO 16750-2 (Pulse b), making SMC3K51CAHM3_A suitable for engine control units, body electronics, and ADAS power domains.
What package type does SMC3K51CAHM3_A use, and what are its key mechanical features?
SMC3K51CAHM3_A uses the SMC (DO-214AB) surface-mount package, measuring 7.11 mm × 6.22 mm × 2.62 mm. Key features include matte tin-plated leads compliant with J-STD-002 and JESD 22-B102, UL 94 V-0 molding compound, and JESD 201 Class 2 whisker resistance. The "HM3_A" suffix denotes halogen-free, RoHS-compliant, and AEC-Q101-qualified construction.
How does the bidirectional nature of SMC3K51CAHM3_A affect its placement in circuit design?
Because SMC3K51CAHM3_A is bidirectional, it has no polarity marking and functions identically regardless of orientation across the protected line. This simplifies PCB layout-engineers may place it between any two nodes (e.g., power-to-ground, signal-to-ground, or differential pair) without concern for anode/cathode alignment. Its symmetrical VBR and VC characteristics ensure consistent clamping in both voltage polarities, ideal for AC-coupled or floating systems.
Does SMC3K51CAHM3_A meet international ESD immunity standards?
Yes, SMC3K51CAHM3_A is rated for 30 kV human-body-model (HBM) ESD per IEC 61000-4-2, covering both contact and air discharge modes. This rating is verified per the Vishay datasheet and enables robust protection of sensitive interfaces such as USB, CAN, and sensor analog outputs without additional external ESD components. The device's sub-nanosecond response ensures clamping occurs before system-level latch-up or damage can occur.
SMC3K51CAHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 51V
- Voltage - Breakdown (Min):
- 56.7V
- Voltage - Clamping (Max) @ Ipp:
- 82.4V
- Current - Peak Pulse (10/1000µs):
- 36.4A
- Power - Peak Pulse:
- 3000W (3kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMC)
SMC3K51CAHM3_A/I FAQ
1.How can I place an order for SMC3K51CAHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMC3K51CAHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMC3K51CAHM3_A/I reliable?
The price and inventory of SMC3K51CAHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMC3K51CAHM3_A/I is usually 5 days.
3.What payment methods are accepted for SMC3K51CAHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMC3K51CAHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMC3K51CAHM3_A/I?
SMC3K51CAHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMC3K51CAHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMC3K51CAHM3_A/I?
For technical support, including SMC3K51CAHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMC3K51CAHM3_A/I requirements.
6.How does Aetrix verify that SMC3K51CAHM3_A/I is sourced from the original manufacturer or authorized distributors?
All SMC3K51CAHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMC3K51CAHM3_A/I meets industry standards.
7.What is the process for return or replacement of SMC3K51CAHM3_A/I?
All SMC3K51CAHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with SMC3K51CAHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMC3K51CAHM3_A/I part is unused and in its original packaging.
Return procedure for SMC3K51CAHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMC3K51CAHM3_A/I Tags

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DESD3V3E1BL-7B
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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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