Vishay General Semiconductor - Diodes Division SMCG110HE3/57T
- Part No.:
- SMCG110HE3/57T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AB, SMC Gull Wing
- Datasheet:
-
SMCG110HE3/57T.pdf
- Description:
- TVS DIODE 110VWM 196VC DO215AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,753
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Product details
Overview
SMCG110HE3/57T from Vishay General Semiconductor is a bi-directional transient voltage suppressor (TVS) in DO-215AB (SMCG) package, designed for robust overvoltage protection on signal and power lines. It features a 110 V stand-off voltage (VWM), 177 A peak pulse current (IPPM) at 10/1000 µs, 1500 W peak pulse power (PPPM), clamping voltage of 177 V at IPPM, and AEC-Q101 qualification for automotive use.
For engineers reviewing the SMCG110HE3/57T datasheet, SMCG110HE3/57T pinout, SMCG110HE3/57T application, or SMCG110HE3/57T equivalent, this device is selected for high-energy surge suppression in automotive ECUs, industrial sensor interfaces, and telecom line protection where low clamping ratio, fast response (<1 ns), and MSL Level 1 reliability are critical.
Technical Context
The SMCG110HE3/57T is a bi-directional silicon avalanche diode operating symmetrically in both polarities, with breakdown voltage (VBR) specified at 122–135 V (min/max) under 1 mA test current. Its clamping behavior follows standardized 10/1000 µs surge waveform compliance per ANSI/IEEE C62.35, and thermal performance is characterized by RθJA = 75 °C/W on 8.0 mm × 8.0 mm copper pads.
It exhibits <1 µA reverse leakage at VWM (110 V), operates across –55 °C to +150 °C junction temperature range, and maintains stable surge capability up to 1500 W due to glass-passivated junction and low incremental surge resistance - enabling reliable protection against inductive switching transients and ESD events without degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 110 V - Maximum continuous reverse working voltage before clamping initiates; defines safe operating margin below breakdown. |
| VBR (Breakdown Voltage) | 122–135 V at 1 mA - Ensures predictable, repeatable avalanche conduction onset during overvoltage events. |
| VC (Clamping Voltage) | 177 V at 177 A (10/1000 µs) - Limits downstream voltage stress to protect ICs like microcontrollers or CAN transceivers. |
| PPPM (Peak Pulse Power) | 1500 W - Sustains high-energy surges (e.g., ISO 7637-2 Pulse 5a) without failure when mounted per recommended pad layout. |
| ID (Reverse Leakage) | ≤1.0 µA at 110 V - Minimizes standby power loss and avoids false triggering in high-impedance circuits. |
| TJ max. | +150 °C - Supports under-hood automotive environments and industrial enclosures with elevated ambient temperatures. |
| AEC-Q101 Qualified | Yes - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD47. |
Pinout & Package
DO-215AB (SMCG) surface-mount package: low-profile gull-wing leads, matte tin-plated terminals solderable per J-STD-002/JESD22-B102, UL 94 V-0 molding compound, no polarity marking (bi-directional).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bi-directional avalanche junction | No functional distinction between terminals; either lead connects to protected line or ground - enables flexible PCB routing. |
| Lead 1 / Lead 2 | Current-carrying terminal | Both leads conduct surge current equally in either direction; requires equal copper area (8.0 mm × 8.0 mm) for thermal derating compliance. |
Key Features
| Feature | Design Value |
|---|---|
| Bi-directional clamping | Protects AC-coupled or floating signal lines (e.g., RS-485, CAN FD differential pairs) without polarity constraints. |
| AEC-Q101 qualification | Validated for automotive electronics including engine control modules, ADAS sensors, and body control units. |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles without moisture sensitivity concerns or baking requirements. |
| Glass-passivated junction | Ensures long-term stability of VBR and leakage under thermal cycling and humidity exposure. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (e.g., EFT bursts), improving protection margin for 3.3 V/5 V logic. |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V battery-supplied ECUs from load dump (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Primary clamping element placed between power rail and ground, responding within <1 ns to limit voltage to ≤177 V. Use Value: Prevents latch-up or permanent damage to MCU power domains and analog front-ends in harsh vehicle electrical environments. |
Use Scenario: Shielding 4–20 mA current loop transmitters and RTD inputs from field-induced surges in factory automation. IC Role / Device Role / Timing Role: Bidirectional shunt protector across input terminals, absorbing ±1 kV EFT bursts per IEC 61000-4-4. Use Value: Maintains signal integrity and eliminates calibration drift caused by transient-induced offset shifts in precision analog circuits. |
| Telecom Data Line Surge Suppression | Consumer Device USB/DisplayPort ESD Guard |
Use Scenario: Safeguarding Ethernet PHYs and PoE injectors against lightning-induced surges on twisted-pair cables. IC Role / Device Role / Timing Role: Secondary-level TVS placed after common-mode chokes, clamping differential and common-mode transients simultaneously. Use Value: Enables compliance with IEC 61000-4-5 (10/700 µs) up to 4 kV while preserving signal rise time and insertion loss. |
Use Scenario: Front-end ESD protection for USB 3.2 Gen 2 and DisplayPort 1.4 ports in laptops and docking stations. IC Role / Device Role / Timing Role: Low-capacitance bi-directional clamp (CJ ≈ 100 pF at 0 V) placed directly at connector pins. Use Value: Passes USB-IF and VESA compliance tests (IEC 61000-4-2 ±15 kV air/±8 kV contact) without degrading 10 Gbps data eye diagrams. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ110CA | Same VWM (110 V) and PPPM (400 W), but lower IPPM (36.1 A); SMA package (larger footprint, higher RθJA). | Limited to lower-energy transients (e.g., IEC 61000-4-2 only); unsuitable for ISO 7637-2 Pulse 5a. | Select when cost sensitivity outweighs surge energy requirement and board space permits larger package. |
| SMCJ110CA | Same VWM (110 V), higher PPPM (1500 W), identical DO-214AB package; slightly higher VC (187 V at 174 A). | Direct replacement in most layouts; marginally reduced clamping efficiency but same automotive qualification. | Choose if existing design uses SMCJ footprint and requires drop-in validation with minimal retest. |
Compared with SMAJ110CA and SMCJ110CA, the SMCG110HE3/57T delivers identical surge rating in a smaller DO-215AB footprint, tighter clamping (177 V vs. 187 V), and AEC-Q101 certification out-of-box - making it optimal for space-constrained automotive and industrial modules requiring highest protection density.
Availability
SMCG110HE3/57T is available at Aetrix Electronics and suitable for automotive ECU designs, industrial sensor nodes, telecom infrastructure equipment, and consumer USB-C interface protection requiring stable component supply and full traceability.
Supply support for SMCG110HE3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, power efficiency, and automotive-grade qualification.
The SMCG series was engineered specifically for high-energy transient suppression in automotive and industrial systems, combining AEC-Q101 compliance, low-profile packaging, and precise clamping performance across wide voltage ranges.
FAQ
What is the clamping voltage of the SMCG110HE3/57T under standard surge conditions?
The SMCG110HE3/57T has a maximum clamping voltage (VC) of 177 V when subjected to a 10/1000 µs waveform at its rated peak pulse current of 177 A. This value is measured per ANSI/IEEE C62.35 and ensures downstream components see limited overvoltage stress during surge events. The SMCG110HE3/57T achieves this with low incremental surge resistance and a tightly controlled avalanche junction.
Is the SMCG110HE3/57T suitable for automotive applications?
Yes, the SMCG110HE3/57T is AEC-Q101 qualified and explicitly rated for automotive use, including under-hood environments. Its –55 °C to +150 °C operating junction temperature range, MSL Level 1 reflow compatibility, and validation against temperature cycling, HTRB, and ESD testing make it appropriate for engine control units, ADAS camera modules, and body electronics. The SMCG110HE3/57T meets these requirements without derating.
How does the DO-215AB package of the SMCG110HE3/57T compare to DO-214AB in size and thermal performance?
The DO-215AB (SMCG) package is dimensionally smaller than DO-214AB, with tighter lead spacing and lower profile, yet maintains comparable thermal resistance: RθJA = 75 °C/W for SMCG110HE3/57T versus ~80 °C/W for typical DO-214AB parts. Both require 8.0 mm × 8.0 mm copper pads for full 1500 W rating. The SMCG110HE3/57T leverages optimized internal construction to achieve equivalent surge handling in reduced board area.
Does the SMCG110HE3/57T have polarity markings, and how is it installed on PCB?
No, the SMCG110HE3/57T is a bi-directional device and carries no polarity marking - there is no anode/cathode distinction. Either terminal may connect to the protected line or ground plane. Installation requires symmetric 8.0 mm × 8.0 mm copper pads per lead for thermal compliance, and no orientation alignment is needed during automated placement. This simplifies layout and reduces assembly errors compared to uni-directional TVS diodes.
What standards does the SMCG110HE3/57T meet for surge and ESD immunity?
The SMCG110HE3/57T meets IEC 61000-4-2 (ESD ±15 kV air/±8 kV contact), IEC 61000-4-4 (EFT ±2 kV), and IEC 61000-4-5 (surge 4 kV line-earth, 2 kV line-line) when applied per recommended layout. It also complies with ISO 7637-2 Pulse 5a (load dump) for automotive use. These capabilities are enabled by its 1500 W PPPM rating, sub-nanosecond response, and AEC-Q101 qualification - all verified for the SMCG110HE3/57T specifically.
SMCG110HE3/57T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AB, SMC Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 122V
- Voltage - Clamping (Max) @ Ipp:
- 196V
- Current - Peak Pulse (10/1000µs):
- 7.7A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCG)
SMCG110HE3/57T FAQ
1.How can I place an order for SMCG110HE3/57T through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCG110HE3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCG110HE3/57T reliable?
The price and inventory of SMCG110HE3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCG110HE3/57T is usually 5 days.
3.What payment methods are accepted for SMCG110HE3/57T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCG110HE3/57T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCG110HE3/57T?
SMCG110HE3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCG110HE3/57T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCG110HE3/57T?
For technical support, including SMCG110HE3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCG110HE3/57T requirements.
6.How does Aetrix verify that SMCG110HE3/57T is sourced from the original manufacturer or authorized distributors?
All SMCG110HE3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCG110HE3/57T meets industry standards.
7.What is the process for return or replacement of SMCG110HE3/57T?
All SMCG110HE3/57T units undergo pre-shipment inspection (PSI). If there is an issue with SMCG110HE3/57T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCG110HE3/57T part is unused and in its original packaging.
Return procedure for SMCG110HE3/57T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCG110HE3/57T Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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