My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMCG12AHE3/9AT
- Part No.:
- SMCG12AHE3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AB, SMC Gull Wing
- Datasheet:
-
SMCG12AHE3/9AT.pdf
- Description:
- TVS DIODE 12VWM 19.9VC DO215AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,102
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCG12AHE3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in the SMCG (DO-215AB) package, featuring a 12 V stand-off voltage (VWM), 13.3–14.7 V breakdown voltage (VBR) at 1 mA, 1500 W peak pulse power (PPPM), and AEC-Q101 qualification for automotive-grade reliability. It protects MOSFETs and ICs against inductive switching transients in engine control units and sensor signal lines.
For engineers reviewing the SMCG12AHE3/9AT datasheet, SMCG12AHE3/9AT pinout, SMCG12AHE3/9AT application, or SMCG12AHE3/9AT equivalent, this page delivers verified electrical parameters, polarity marking guidance, thermal resistance data, clamping behavior under 10/1000 µs surge, and AEC-Q101-compliant supply chain context for automotive electronics design.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-band polarity identification, optimized for fast response (<1 ns) to ESD and lightning-induced surges. Its glass-passivated junction ensures stable leakage performance (ID ≤ 5 µA at VWM), while low incremental surge resistance enables effective energy diversion during 8.3 ms half-sine IFSM events up to 200 A.
The SMCG12AHE3/9AT uses the DO-215AB surface-mount package with matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards. Thermal resistance is specified at RθJA = 75 °C/W (on 8.0 mm × 8.0 mm copper pads) and RθJL = 15 °C/W, supporting robust thermal management in high-density automotive PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 12 V - maximum continuous reverse operating voltage before clamping begins |
| VBR min/max | 13.3 V / 14.7 V at IT = 1 mA - guaranteed breakdown range defining turn-on threshold |
| VC at IPPM | 19.9 V - clamped voltage during 1500 W 10/1000 µs surge, limiting stress on protected circuitry |
| PPPM | 1500 W - peak pulse power handling per single transient event, per standard waveform |
| ID at VWM | ≤ 5 µA - ultra-low reverse leakage preserves signal integrity in high-impedance sensor interfaces |
| TJ max | +150 °C - extended junction temperature rating enabling under-hood automotive deployment |
| AEC-Q101 | Qualified - validated for automotive reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
Package: SMCG (DO-215AB) - low-profile, surface-mount case with cathode band marking on unidirectional variants. Molding compound meets UL 94 V-0; terminals are matte tin plated per J-STD-002.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction | Connected to ground or lower-potential node in unidirectional protection configuration |
| Cathode | Current exit terminal during forward conduction; marked with band | Connected to protected line (e.g., CAN_H, LIN, sensor output); defines clamping polarity |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control, body electronics, and ADAS sensor interfaces |
| Glass passivated junction | Ensures long-term stability of VBR and ID across temperature and humidity stress conditions |
| Low profile DO-215AB package | Enables automated placement and supports compact PCB layouts in space-constrained modules |
| 1500 W peak pulse power | Provides robust protection against ISO 7637-2 Pulse 1, 2a, 3a/b and IEC 61000-4-5 surge events |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles without moisture sensitivity concerns |
Applications
| Automotive Engine Control Unit (ECU) | Industrial Sensor Signal Conditioning |
|---|---|
Use Scenario: Protection of microcontroller I/O pins and driver FET gates from load-dump and inductive kickback in 12 V powertrain systems. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between MCU GPIO and external connector, with cathode tied to signal line. Use Value: Limits transient voltage to ≤19.9 V during 1500 W surges, preventing latch-up or gate oxide damage in AEC-Q100 qualified MCUs. | Use Scenario: Guarding analog outputs of pressure or temperature sensors exposed to field wiring in factory automation cabinets. IC Role / Device Role / Timing Role: Standoff-mode protector on 4–20 mA loop outputs, absorbing induced noise from nearby motor drives. Use Value: Maintains ≤5 µA leakage at 12 V VWM to avoid current-loop error, while clamping fast transients before op-amp input stages. |
| Automotive Body Control Module (BCM) | Telecom Interface Protection |
Use Scenario: Safeguarding LIN bus transceivers and LED driver ICs against ESD and battery reverse connection events. IC Role / Device Role / Timing Role: Primary overvoltage clamp on LIN signal line, positioned adjacent to transceiver IC with minimal trace length. Use Value: Responds in <1 ns to meet ISO 10605 ESD immunity requirements, with 19.9 V VC ensuring transceiver survival at ±25 kV contact discharge. | Use Scenario: Protecting RS-485 transceiver inputs in outdoor telecom base station equipment subjected to lightning-induced surges. IC Role / Device Role / Timing Role: First-stage TVS on differential pair, configured unidirectionally with cathodes tied to VCC and anodes to signal lines. Use Value: Handles 10/1000 µs surges up to 1500 W per line, maintaining signal integrity via low capacitance and tight VBR tolerance (±5.2%). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ12A-E3/57T | Same VWM (12 V), lower PPPM (400 W), SMA (DO-214AC) package, RθJA = 85 °C/W | Limited to lower-energy transients; not AEC-Q101 qualified | Select when cost or board space is critical and automotive qualification is unnecessary |
| SMCJ12AHE3/9AT | Same VWM (12 V), higher PPPM (1500 W), SMC (DO-214AB) package, RθJA = 50 °C/W, AEC-Q101 qualified | Higher thermal efficiency but larger footprint (7.11 mm × 6.22 mm vs. SMCG's 6.60 mm × 5.59 mm) | Select when higher surge margin or lower junction-to-ambient resistance is required in non-space-constrained designs |
Compared with SMAJ12A-E3/57T and SMCJ12AHE3/9AT, the SMCG12AHE3/9AT delivers identical surge rating and automotive qualification in the smallest DO-215AB footprint-enabling higher component density in modern ECU and BCM modules without sacrificing thermal or reliability performance.
Availability
SMCG12AHE3/9AT is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, and telecom line protection requiring stable component supply, AEC-Q101 compliance, and 13" tape-and-reel logistics support.
Supply support for SMCG12AHE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and automotive-grade validation.
The SMCG series is designed specifically for high-power transient suppression in space-constrained automotive and industrial environments, combining AEC-Q101 qualification with the compact DO-215AB package and 1500 W surge capability.
FAQ
What is the clamping voltage of the SMCG12AHE3/9AT under a 10/1000 µs surge?
The SMCG12AHE3/9AT clamps to a maximum of 19.9 V at its rated peak pulse current (IPPM), which corresponds to the 1500 W 10/1000 µs waveform. This value is measured under standardized test conditions with 8.0 mm × 8.0 mm copper pads and confirms the device's ability to limit transient voltage stress on downstream components such as microcontrollers or transceivers in the SMCG12AHE3/9AT protection circuit.
Is the SMCG12AHE3/9AT suitable for automotive applications?
Yes, the SMCG12AHE3/9AT is AEC-Q101 qualified and explicitly intended for automotive use, including engine control units, body control modules, and sensor interfaces. Its construction-including glass-passivated junction, MSL Level 1 rating, and operation from –55 °C to +150 °C-meets stringent automotive environmental and reliability requirements. The SMCG12AHE3/9AT datasheet confirms qualification per AEC-Q101 test conditions.
How is polarity identified on the SMCG12AHE3/9AT?
The SMCG12AHE3/9AT is a unidirectional TVS diode with cathode identification via a visible band on the package body. Per Vishay documentation, the banded end is the cathode terminal and must be connected toward the signal line being protected, while the anode connects to ground or the lower-potential reference. No marking appears on bidirectional variants, but the SMCG12AHE3/9AT is unidirectional and always features the band.
What is the maximum reverse leakage current for the SMCG12AHE3/9AT at its stand-off voltage?
At its 12 V stand-off voltage (VWM), the SMCG12AHE3/9AT exhibits a maximum reverse leakage current (ID) of 5 µA at TA = 25 °C. This ultra-low leakage ensures minimal impact on high-impedance circuits such as sensor bias networks or current-loop interfaces, preserving accuracy and power efficiency in precision analog applications using the SMCG12AHE3/9AT.
Does the SMCG12AHE3/9AT require derating at elevated ambient temperatures?
Yes, the SMCG12AHE3/9AT must be derated above TA = 25 °C per Figure 2 in the Vishay datasheet (Document Number: 88457). Its peak pulse power (PPPM) decreases linearly with rising junction temperature, and the device's thermal resistance (RθJA = 75 °C/W) dictates that sustained power dissipation requires careful layout-especially on smaller copper areas. Designers must apply derating curves when using the SMCG12AHE3/9AT in under-hood or enclosed industrial environments.
SMCG12AHE3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AB, SMC Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- 75.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCG)
SMCG12AHE3/9AT FAQ
1.How can I place an order for SMCG12AHE3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCG12AHE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCG12AHE3/9AT reliable?
The price and inventory of SMCG12AHE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCG12AHE3/9AT is usually 5 days.
3.What payment methods are accepted for SMCG12AHE3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCG12AHE3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCG12AHE3/9AT?
SMCG12AHE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCG12AHE3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCG12AHE3/9AT?
For technical support, including SMCG12AHE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCG12AHE3/9AT requirements.
6.How does Aetrix verify that SMCG12AHE3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCG12AHE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCG12AHE3/9AT meets industry standards.
7.What is the process for return or replacement of SMCG12AHE3/9AT?
All SMCG12AHE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCG12AHE3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCG12AHE3/9AT part is unused and in its original packaging.
Return procedure for SMCG12AHE3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCG12AHE3/9AT Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
