Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMCG51AHE3/9AT

Part No.:
SMCG51AHE3/9AT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-215AB, SMC Gull Wing
Datasheet:
AetrixSMCG51AHE3/9AT.pdf
Description:
TVS DIODE 51VWM 82.4VC DO215AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,798

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMCG51AHE3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in the SMCG (DO-215AB) package, designed for robust overvoltage protection of sensitive electronics. It features a 51 V standoff voltage (VWM), 56.7–62.7 V breakdown voltage (VBR) at 1 mA, 1500 W peak pulse power (10/1000 µs), 82.4 V clamping voltage at 18.2 A IPPM, and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the SMCG51AHE3/9AT datasheet, SMCG51AHE3/9AT pinout, SMCG51AHE3/9AT application, or SMCG51AHE3/9AT equivalent, this device is selected for high-energy surge suppression on power rails and signal lines where low clamping ratio, fast response (<1 ns), and stable performance across -55 °C to +150 °C are critical - especially in automotive ECUs, industrial motor drives, and telecom interface protection.

Technical Context

The SMCG51AHE3/9AT operates as a unidirectional avalanche diode with glass-passivated junction, delivering precise voltage clamping during transient events such as ESD, lightning-induced surges, and inductive switching spikes. Its DO-215AB package supports automated SMT placement and meets J-STD-020 MSL Level 1 with 260 °C reflow peak.

It exhibits 1.0 µA max reverse leakage at 51 V, 75 °C/W junction-to-ambient thermal resistance, and 15 °C/W junction-to-lead resistance - enabling effective thermal management on standard 8.0 mm × 8.0 mm copper pads. The cathode band denotes polarity, and it is rated for 200 A non-repetitive forward surge (8.3 ms half-sine).

Key Specifications

Parameter Value and Actual Design Meaning
VWM 51 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC rail margin for protected circuitry.
VBR (min/max) 56.7 V / 62.7 V at 1 mA - Tight breakdown window ensures predictable turn-on and avoids premature conduction under normal operation.
VC @ IPPM 82.4 V at 18.2 A - Clamping voltage during 10/1000 µs surge; determines maximum stress imposed on downstream ICs or MOSFETs.
PPPM 1500 W - Peak pulse power handling capacity; enables protection against high-energy transients per IEC 61000-4-5 Level 4.
ID @ VWM 1.0 µA - Ultra-low leakage preserves signal integrity and minimizes standby power loss in battery-powered systems.
TJ max. +150 °C - Extended junction temperature rating supports under-hood automotive and high-ambient industrial environments.
AEC-Q101 Qualified - Validated for automotive applications including engine control, ADAS sensors, and infotainment power supplies.

Pinout & Package

Package: SMCG (DO-215AB) - surface-mount, gull-wing leaded case with matte tin-plated terminals, UL 94 V-0 molding compound, and 0.220–0.245 inch (5.59–6.22 mm) body length.

Pin/Terminal Circuit Role Design Meaning
Anode Current entry terminal in forward bias; connected to ground or low-side reference in unidirectional TVS configuration. Provides return path during clamping; must be routed with low-inductance connection to minimize voltage overshoot.
Cathode Current exit terminal in forward bias; marked by band; connected to protected line (e.g., 12 V rail, CAN_H, USB_VBUS). Defines clamping polarity; reverse-biased during normal operation; avalanches when line voltage exceeds VBR.

Key Features

Feature Design Value
Glass-passivated junction Ensures stable VBR over time and temperature, with reduced parameter drift vs. epoxy-passivated alternatives.
Low incremental surge resistance Minimizes dynamic impedance during transient events, directly lowering VC and improving protection margin.
MSL Level 1 (260 °C peak) Enables single-pass reflow without moisture-related popcorn failure; eliminates pre-bake requirement for production.
RoHS-compliant & AEC-Q101 qualified Meets automotive supply chain requirements for environmental compliance and reliability validation (HTOL, TC, UHAST).
1500 W 10/1000 µs rating Supports IEC 61000-4-5 surge immunity up to 4 kV (line-earth) and 2 kV (line-line) with appropriate series impedance.

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 12 V/24 V power inputs in engine control units (ECUs) and body control modules (BCMs) against load dump and jump-start transients.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp surges above 51 V while maintaining low leakage during nominal operation.

Use Value: Withstands 200 A 8.3 ms surge and clamps to ≤82.4 V, preventing damage to downstream PMICs and microcontrollers rated for 60 V absolute maximum.

Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) in PLC I/O modules exposed to field wiring transients.

IC Role / Device Role / Timing Role: Connected anode-to-ground, cathode-to-signal line to suppress ESD and inductive kickback without loading the mV-level sensor output.

Use Value: 1.0 µA leakage at 51 V avoids signal offset errors; 82.4 V clamping protects 3.3 V/5 V ADC front-ends via series current-limiting resistor.

Telecom DC Power Input Protection Motor Drive Gate Driver Protection

Use Scenario: Securing -48 V DC input stages in telecom base station power supplies against lightning-induced surges on outdoor cabling.

IC Role / Device Role / Timing Role: Used in unidirectional configuration with cathode tied to -48 V rail and anode to system ground to clamp positive-going transients.

Use Value: 1500 W rating handles 10/1000 µs surges up to 4 kV; AEC-Q101 qualification ensures long-term stability in harsh telecom environments.

Use Scenario: Shielding high-side gate drivers (e.g., driving IGBTs in HVAC inverters) from Miller-induced voltage spikes during switching transitions.

IC Role / Device Role / Timing Role: Placed across gate-source terminals (cathode to gate, anode to source) to clamp dv/dt-induced overshoot below driver IC's absolute max rating.

Use Value: Fast <1 ns response and low clamping ratio (VC/VBR ≈ 1.45) limit gate stress to safe levels, reducing risk of false turn-on or oxide degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ51A-E3/57T Same VWM (51 V) and PPPM (400 W), but lower 400 W rating and SMA (DO-214AC) package; higher RθJA (110 °C/W). Limited to lower-energy transients; unsuitable for IEC 61000-4-5 Level 4 or automotive load dump. Select when cost sensitivity outweighs surge energy requirements and board space permits larger footprint.
SMCJ51AHE3/9AT Identical VWM (51 V), VBR (56.7–62.7 V), and PPPM (1500 W), but in larger SMC (DO-214AB) package; same AEC-Q101 qualification. Higher thermal mass allows longer surge duration handling; requires larger PCB pad area (10.16 mm × 7.87 mm vs. 7.87 mm × 7.11 mm). Prefer when thermal derating margin is critical or existing layout accommodates SMC footprint.

Compared with SMAJ51A-E3/57T and SMCJ51AHE3/9AT, the SMCG51AHE3/9AT delivers identical surge capability in a smaller DO-215AB package with superior thermal resistance (75 °C/W vs. 110 °C/W) and tighter mounting constraints - making it optimal for space-constrained automotive and industrial modules requiring full 1500 W compliance.

Availability

SMCG51AHE3/9AT is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, and telecom power inputs requiring stable component supply, AEC-Q101 traceability, and 13" tape-and-reel delivery for high-volume SMT assembly.

Supply support for SMCG51AHE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.

The SMCG series was developed to deliver high-power transient suppression in compact surface-mount packages for automotive and industrial applications where space, thermal performance, and AEC-Q101 compliance are mandatory.

FAQ

What is the clamping voltage of SMCG51AHE3/9AT at its rated peak pulse current?

The SMCG51AHE3/9AT has a maximum clamping voltage (VC) of 82.4 V at 18.2 A peak pulse current (IPPM), measured under the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during surge events and is critical for ensuring downstream components remain within their absolute maximum ratings. The SMCG51AHE3/9AT maintains this clamping performance across its full operating temperature range.

Is SMCG51AHE3/9AT suitable for bidirectional transient protection?

No, SMCG51AHE3/9AT is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. It conducts only in reverse breakdown (cathode positive relative to anode) and blocks forward current. For bidirectional protection, Vishay offers the SMCG51CA variant - which uses symmetrical breakdown in both directions and carries no polarity marking. Using SMCG51AHE3/9AT in bidirectional applications risks failure during negative transients.

What does the "HE3" suffix signify in SMCG51AHE3/9AT?

The "HE3" suffix in SMCG51AHE3/9AT indicates RoHS-compliant construction and AEC-Q101 qualification. Specifically, "H" denotes AEC-Q101 qualification, "E3" confirms matte tin plating and industrial-grade RoHS compliance per JEDEC standards. This distinguishes it from base variants like SMCG51A-E3 (RoHS only) or SMCG51A-M3 (halogen-free RoHS). The "9AT" denotes 13-inch tape-and-reel packaging with 3500 units per reel.

How does the thermal resistance of SMCG51AHE3/9AT affect PCB layout?

The SMCG51AHE3/9AT has a typical RθJA of 75 °C/W, achievable only with the recommended 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pad per terminal. Reducing pad size increases junction temperature during sustained power dissipation (e.g., repetitive surges), risking thermal runaway. Layouts must maintain minimum copper area, avoid thermal reliefs on pads, and ensure symmetric copper distribution to prevent uneven heating. The SMCG51AHE3/9AT's RθJL of 15 °C/W further emphasizes the need for short, wide traces to ground planes.

Can SMCG51AHE3/9AT replace SMAJ51A in an existing design?

SMCG51AHE3/9AT is not a direct drop-in replacement for SMAJ51A due to different package (DO-215AB vs. DO-214AC), pin pitch (2.3 mm vs. 2.8 mm), and thermal profile. While both share 51 V VWM and unidirectional function, the SMCG51AHE3/9AT offers 1500 W vs. SMAJ51A's 400 W - requiring verification of layout clearance, solder paste volume, and reflow profile. Migration necessitates PCB redesign and thermal validation; it is not a footprint-compatible upgrade.

SMCG51AHE3/9AT Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-215AB, SMC Gull Wing
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
51V
Voltage - Breakdown (Min):
56.7V
Voltage - Clamping (Max) @ Ipp:
82.4V
Current - Peak Pulse (10/1000µs):
18.2A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCG)

SMCG51AHE3/9AT FAQ

1.How can I place an order for SMCG51AHE3/9AT through Aetrix?

Please submit a Request for Quotation (RFQ) for SMCG51AHE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMCG51AHE3/9AT reliable?

The price and inventory of SMCG51AHE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCG51AHE3/9AT is usually 5 days.

3.What payment methods are accepted for SMCG51AHE3/9AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCG51AHE3/9AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMCG51AHE3/9AT?

SMCG51AHE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMCG51AHE3/9AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMCG51AHE3/9AT?

For technical support, including SMCG51AHE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCG51AHE3/9AT requirements.

6.How does Aetrix verify that SMCG51AHE3/9AT is sourced from the original manufacturer or authorized distributors?

All SMCG51AHE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCG51AHE3/9AT meets industry standards.

7.What is the process for return or replacement of SMCG51AHE3/9AT?

All SMCG51AHE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCG51AHE3/9AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMCG51AHE3/9AT part is unused and in its original packaging.

Return procedure for SMCG51AHE3/9AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMCG51AHE3/9AT Tags

  • SMCG51AHE3/9AT
  • SMCG51AHE3/9AT PDF
  • SMCG51AHE3/9AT Datasheet
  • SMCG51AHE3/9AT Specifications
  • SMCG51AHE3/9AT Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMCG51AHE3/9AT
  • Buy SMCG51AHE3/9AT
  • SMCG51AHE3/9AT Price
  • SMCG51AHE3/9AT Distributor
  • SMCG51AHE3/9AT Supplier
  • SMCG51AHE3/9AT Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER