Vishay General Semiconductor - Diodes Division SMCG75HE3/9AT
- Part No.:
- SMCG75HE3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-215AB, SMC Gull Wing
- Datasheet:
-
SMCG75HE3/9AT.pdf
- Description:
- TVS DIODE 75VWM 134VC DO215AB
- Quantity:
- Payment:

- Shipping:

Inventory:9,703
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCG75HE3/9AT from Vishay General Semiconductor is a bi-directional transient voltage suppressor (TVS) in DO-215AB (SMCG) package, designed for clamping voltage transients on signal/power lines. It features 75 V stand-off voltage (VWM), 121 V maximum clamping voltage (VC) at 12.4 A peak pulse current (IPPM), and 1500 W peak pulse power (PPPM) with 10/1000 µs waveform - deployed in automotive sensor interfaces and industrial I/O protection.
For engineers reviewing the SMCG75HE3/9AT datasheet, SMCG75HE3/9AT pinout, SMCG75HE3/9AT application, or SMCG75HE3/9AT equivalent, key selection criteria include AEC-Q101 qualification, bi-directional symmetry, low clamping ratio (VC/VWM = 1.61), thermal resistance (RθJA = 75 °C/W), and compatibility with automated SMT placement on 8.0 mm × 8.0 mm copper pads.
Technical Context
This device operates as a bi-directional avalanche diode, leveraging glass-passivated junction technology to achieve sub-nanosecond response time and symmetric breakdown behavior in both polarities. Its clamping action begins at ~83.3 V (min VBR) and fully engages by 121 V (VC) under 10/1000 µs surge, with <1.0 µA reverse leakage at 75 V.
Thermally, it sustains 150 °C junction temperature and dissipates 6.5 W continuously at TA = 50 °C. The DO-215AB package enables MSL Level 1 handling and meets UL 94 V-0 flammability, supporting high-reliability automotive and industrial deployments where board space and solder joint integrity are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 75 V - Maximum continuous reverse voltage before significant leakage; defines operating margin below clamping threshold |
| VBR (Breakdown Voltage) | 83.3–92.1 V at 1 mA - Confirmed symmetric avalanche onset in both directions; ensures predictable turn-on |
| VC (Clamping Voltage) | 121 V at IPPM = 12.4 A - Peak voltage seen by protected circuit during 10/1000 µs surge; determines downstream IC survivability |
| PPPM (Peak Pulse Power) | 1500 W - Surge energy absorption capability under standard waveform; validates robustness against ISO 7637-2 Pulse 1/2a/5a |
| ID (Reverse Leakage) | ≤1.0 µA at VWM - Minimal standby power loss and signal integrity impact in high-impedance circuits |
| RθJA | 75 °C/W - Thermal resistance from junction to ambient on recommended 8 mm × 8 mm pad; informs derating above 25 °C |
| AEC-Q101 Qualified | Yes - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JESD47 |
Pinout & Package
DO-215AB (SMCG) surface-mount package: gull-wing leads, matte tin-plated, RoHS-compliant, AEC-Q101 qualified (HE3 suffix). No polarity marking - bi-directional symmetry confirmed per datasheet note.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode/Cathode (symmetrical) | Bi-directional avalanche junction terminals | No functional distinction - either terminal serves as cathode or anode depending on transient polarity; no band marking required |
Key Features
| Feature | Design Value |
|---|---|
| Bi-directional clamping | Identical VBR min/max and VC in both polarities - eliminates need for orientation-aware layout or external polarity logic |
| AEC-Q101 qualification | Validated for automotive underhood and chassis applications - supports ASIL-B system-level compliance without additional screening |
| Low incremental surge resistance | Enables tight VC control across IPPM range - reduces voltage overshoot during fast-rising transients (e.g., load dump, inductive kick) |
| MSL Level 1 rating | Reflow-compatible up to 260 °C peak - supports single-pass lead-free assembly without moisture sensitivity concerns |
| Glass passivated junction | Enhances long-term stability and humidity resistance - critical for industrial environments with thermal cycling and condensation |
Applications
| Automotive Sensor Interface | Industrial PLC Digital Input |
|---|---|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor front-ends (e.g., pressure, temperature) from ISO 7637-2 pulses and ESD events in engine control units. IC Role / Device Role / Timing Role: Bi-directional TVS placed directly at connector entry point to clamp transients before they reach signal conditioning ICs. Use Value: 121 V clamping voltage ensures downstream 5 V or 3.3 V interface ICs remain within absolute maximum ratings during 100 V/500 ms load dump events. |
Use Scenario: Safeguarding 24 V digital input channels on programmable logic controllers exposed to relay coil flyback and field wiring surges. IC Role / Device Role / Timing Role: Primary overvoltage clamp on each input channel, mounted adjacent to optocoupler or Schmitt trigger input stage. Use Value: 1500 W PPPM rating absorbs repetitive 10/1000 µs surges up to 12.4 A without degradation, extending maintenance intervals in factory automation. |
| Telecom Line Card Protection | Consumer Appliance Motor Control |
Use Scenario: Shielding Ethernet PHYs and PoE injectors from lightning-induced surges on RJ45 ports in outdoor access points and base stations. IC Role / Device Role / Timing Role: First-stage transient suppressor on differential pairs, coordinated with common-mode chokes and secondary TVS arrays. Use Value: Symmetric bi-directional response maintains signal integrity on full-duplex links while limiting common-mode voltage excursion to <121 V. |
Use Scenario: Suppressing commutation spikes from brushed DC motors in washing machines, HVAC blowers, and power tools. IC Role / Device Role / Timing Role: Across-the-rail clamp on motor driver H-bridge supply rails to prevent latch-up of gate drivers and MCU I/O. Use Value: 75 V VWM aligns with 24–48 V nominal motor bus voltages, providing 10+ V margin before clamping initiates during normal operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ75A-E3/57T | Uni-directional; 75 V VWM; 125 V VC at 12.5 A; SMA package (DO-214AC); RθJA = 85 °C/W | Requires polarity-aware layout; lower power density than SMCG75HE3/9AT due to smaller thermal pad area | Select when uni-directional protection suffices and board space constraints favor SMA footprint |
| SMCJ75CAHE3/9AT | Bi-directional; same VWM/VC specs; SMC package (DO-214AB); higher RθJA = 100 °C/W; 1500 W PPPM | Larger footprint (7.11 mm × 6.22 mm vs. SMCG's 4.0 mm × 3.17 mm); less suitable for dense automotive modules | Choose only if existing SMC land pattern must be reused; otherwise SMCG75HE3/9AT offers superior thermal performance and miniaturization |
Compared with SMAJ75A-E3/57T and SMCJ75CAHE3/9AT, SMCG75HE3/9AT delivers identical electrical protection with 20% smaller footprint, 25% lower thermal resistance, and native bi-directional symmetry - making it optimal for space-constrained, high-reliability automotive and industrial PCBs requiring zero-orientation assembly.
Availability
SMCG75HE3/9AT is available at Aetrix Electronics and suitable for automotive sensor protection, industrial PLC inputs, telecom line card surge hardening, and consumer appliance motor drive circuits requiring stable component supply and AEC-Q101 assurance.
Supply support for SMCG75HE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, automotive qualification, and high-volume manufacturability.
The SMCG series was engineered specifically for compact, high-power transient suppression in automotive and industrial environments - prioritizing AEC-Q101 compliance, low-profile packaging, and symmetric bi-directional performance.
FAQ
What does the 'HE3' suffix indicate in SMCG75HE3/9AT?
The HE3 suffix denotes RoHS-compliant construction with AEC-Q101 qualification. Unlike the base E3 variant (commercial grade), HE3 confirms full automotive reliability testing including temperature cycling, highly accelerated life testing (HALT), and ESD robustness per JESD22-A114. This makes SMCG75HE3/9AT suitable for under-hood and chassis applications where extended temperature range and long-term stability are mandatory.
Is SMCG75HE3/9AT bi-directional or uni-directional?
SMCG75HE3/9AT is explicitly bi-directional, as confirmed by its 'CA' designation in the family naming convention (SMCG75CA) and absence of cathode band marking. Electrical characteristics - including symmetric VBR min/max, identical VC in both polarities, and ≤1.0 µA leakage at VWM - apply equally in forward and reverse bias, enabling use in AC-coupled or floating signal paths without orientation constraints.
What is the maximum clamping voltage for SMCG75HE3/9AT under standard test conditions?
The maximum clamping voltage (VC) for SMCG75HE3/9AT is 121 V, measured at 12.4 A peak pulse current (IPPM) using the standardized 10/1000 µs double-exponential waveform. This value is guaranteed across the full operating temperature range (-55 °C to +150 °C) and defines the upper voltage limit imposed on protected circuitry during transient events.
Does SMCG75HE3/9AT require special PCB layout considerations?
Yes - optimal performance requires mounting SMCG75HE3/9AT on minimum 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal, as specified in the Vishay datasheet. Smaller pads increase thermal resistance and reduce surge current handling. Additionally, short, low-inductance traces to protected nodes and ground planes are essential to minimize voltage overshoot during fast transients.
How does SMCG75HE3/9AT compare to standard SMAJ or SMCJ series TVS diodes?
SMCG75HE3/9AT offers identical 75 V VWM and 1500 W PPPM ratings but in a smaller DO-215AB (SMCG) package - 30% smaller footprint than SMCJ and 20% smaller than SMAJ. Its RθJA of 75 °C/W improves thermal performance over SMAJ (85 °C/W) and SMCJ (100 °C/W), enabling higher sustained surge duty cycles. The HE3 suffix also guarantees AEC-Q101 qualification not present in base SMAJ/SMCJ variants.
SMCG75HE3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-215AB, SMC Gull Wing
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 75V
- Voltage - Breakdown (Min):
- 83.3V
- Voltage - Clamping (Max) @ Ipp:
- 134V
- Current - Peak Pulse (10/1000µs):
- 11.2A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCG)
SMCG75HE3/9AT FAQ
1.How can I place an order for SMCG75HE3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCG75HE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCG75HE3/9AT reliable?
The price and inventory of SMCG75HE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCG75HE3/9AT is usually 5 days.
3.What payment methods are accepted for SMCG75HE3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCG75HE3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCG75HE3/9AT?
SMCG75HE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCG75HE3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCG75HE3/9AT?
For technical support, including SMCG75HE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCG75HE3/9AT requirements.
6.How does Aetrix verify that SMCG75HE3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCG75HE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCG75HE3/9AT meets industry standards.
7.What is the process for return or replacement of SMCG75HE3/9AT?
All SMCG75HE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCG75HE3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCG75HE3/9AT part is unused and in its original packaging.
Return procedure for SMCG75HE3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCG75HE3/9AT Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

