Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMCJ100A-E3/57T

Part No.:
SMCJ100A-E3/57T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
AetrixSMCJ100A-E3/57T.pdf
Description:
TVS DIODE 100VWM 162VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,010

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMCJ100A-E3/57T from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMC (DO-214AB) package, designed for clamping voltage transients up to 162 V at 9.3 A peak pulse current (10/1000 µs), with 100 V standoff voltage and 1500 W peak pulse power rating. It protects MOSFETs, ICs, and sensor signal lines in automotive and industrial power supply rails.

For engineers reviewing the SMCJ100A-E3/57T datasheet, SMCJ100A-E3/57T pinout, SMCJ100A-E3/57T application, or SMCJ100A-E3/57T equivalent, key selection criteria include its 100 V reverse standoff voltage, 111–123 V breakdown range at 1 mA, 162 V clamping voltage under 9.3 A surge, 1.0 µA max leakage at VWM, and AEC-Q101 qualification eligibility via HE3 suffix variants.

Technical Context

The SMCJ100A-E3/57T operates as a unidirectional avalanche diode, leveraging glass-passivated junction technology for stable breakdown and low incremental surge resistance. Its clamping behavior follows IEEE C62.35 standards, with thermal resistance of 75 °C/W (junction-to-ambient) and 15 °C/W (junction-to-lead).

Designed for transient suppression on DC power lines and signal paths, it responds within picoseconds to ESD and inductive switching events. The device is rated for -55 °C to +150 °C operating junction temperature and meets J-STD-020 MSL Level 1 reflow profile (260 °C peak).

Key Specifications

Parameter Value and Actual Design Meaning
Standoff Voltage (VWM) 100 V - Maximum continuous reverse operating voltage before significant conduction begins.
Breakdown Voltage (VBR) 111–123 V at 1 mA - Confirmed avalanche initiation range; ensures reliable triggering above normal operating rail.
Clamping Voltage (VC) 162 V at 9.3 A (10/1000 µs) - Peak voltage seen by protected circuit during worst-case surge; defines protection margin.
Peak Pulse Power (PPPM) 1500 W - Sustains high-energy transients without failure when mounted per recommended 8 mm × 8 mm copper pads.
Leakage Current (ID) ≤1.0 µA at 100 V - Negligible standby power loss and minimal impact on high-impedance sensing circuits.
Junction Temperature Range -55 °C to +150 °C - Supports under-hood automotive and industrial environments without derating below 25 °C.

Pinout & Package

Package: SMC (DO-214AB), surface-mount, matte tin-plated leads, RoHS-compliant (E3 suffix), UL 94 V-0 molding compound. Cathode indicated by band; anode is unmarked end.

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) Transient current sink Connected to protected line; conducts surge current to ground when VLINE exceeds VBR.
Anode (unbanded end) Reference / ground return Typically tied to system ground or low-impedance return path; completes clamping loop during overvoltage event.

Key Features

Feature Design Value
Low-profile SMC package Enables automated placement in space-constrained PCB layouts while maintaining 1500 W surge capability.
Glass-passivated junction Ensures stable VBR tolerance and long-term reliability under repeated surge stress and humidity exposure.
Very fast response time Sub-nanosecond clamping onset protects sensitive gate oxides and logic inputs from ESD and inductive kick.
MSL Level 1 compliance Supports standard lead-free reflow (260 °C peak) without preconditioning or dry-pack requirements.
AEC-Q101 qualification path E3 suffix enables drop-in upgrade to HE3 variant for automotive applications requiring stress-tested TVS devices.

Applications

Automotive Power Rail Protection Industrial PLC I/O Protection

Use Scenario: 12 V/24 V battery-fed ECUs exposed to load dump (ISO 7637-2 Pulse 5a) and alternator transients.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp surges before they reach PMICs and microcontrollers.

Use Value: Withstands 1500 W pulses and clamps to ≤162 V, preserving downstream components rated for ≤180 V absolute maximum.

Use Scenario: Digital input modules receiving 24 V DC signals from field sensors in factory automation systems.

IC Role / Device Role / Timing Role: Standoff-rated TVS on each input channel suppresses inductive switching noise from solenoids and contactors.

Use Value: 1.0 µA leakage at 100 V avoids false triggering in high-impedance optocoupler interfaces; 162 V clamping prevents latch-up in 3.3 V logic buffers.

DC-DC Converter Input Stage Motor Drive Gate Driver Protection

Use Scenario: 48 V input stage of isolated buck converter in telecom power supplies subject to lightning-induced surges.

IC Role / Device Role / Timing Role: Primary transient shunt on bulk capacitor input, coordinated with upstream fuse and common-mode choke.

Use Value: 111–123 V VBR provides 13–23 V headroom above nominal 100 V max input, enabling robust margin against overshoot.

Use Scenario: High-side N-channel MOSFET gate driver circuits in BLDC inverters where Miller spikes threaten gate oxide integrity.

IC Role / Device Role / Timing Role: TVS across gate-source terminals limits dV/dt-induced turn-on and clamps gate voltage to safe levels.

Use Value: Sub-nanosecond response and 162 V clamping protect 20 V-rated gate drivers without adding RC snubbers or slowing switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ100A-E3/57T Lower PPPM (400 W), same VWM/VBR/VC, SMA package (smaller footprint, lower thermal mass). Suitable for lower-energy transients; not recommended for ISO 7637-2 Pulse 5a or high-current inductive loads. Select when board space is critical and surge energy remains below 400 W; verify thermal derating at elevated ambient.
SMCJ100CA-E3/57T Bidirectional version; identical VWM/VBR/VC ratings but symmetric clamping in both polarities. Required for AC-coupled or floating signal lines (e.g., RS-485, CAN bus) where polarity reversal occurs. Choose only if bidirectional protection is needed; unidirectional SMCJ100A-E3/57T offers lower leakage and simpler grounding in DC rails.

Compared with SMAJ100A-E3/57T, the SMCJ100A-E3/57T delivers 3.75× higher surge power handling and superior thermal dissipation; versus SMCJ100CA-E3/57T, it provides tighter leakage control and optimized unidirectional clamping for grounded DC systems.

Availability

SMCJ100A-E3/57T is available at Aetrix Electronics and suitable for automotive ECUs, industrial PLC I/O modules, DC-DC converter input stages, and motor drive gate driver protection requiring stable component supply and full traceability.

Supply support for SMCJ100A-E3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and power MOSFETs with emphasis on reliability, ruggedness, and automotive-grade qualification.

The SMCJ series was developed specifically for high-energy transient suppression in harsh environments, targeting automotive, industrial, and telecom power systems where 1500 W surge immunity and AEC-Q101 readiness are essential.

FAQ

What is the clamping voltage of the SMCJ100A-E3/57T under a 10/1000 µs surge?

The SMCJ100A-E3/57T clamps to a maximum of 162 V when subjected to a 9.3 A peak pulse current with a 10/1000 µs waveform. This value is measured under standardized test conditions with the device mounted on 8.0 mm × 8.0 mm copper pads per terminal, ensuring repeatable thermal performance and accurate system-level protection modeling for the SMCJ100A-E3/57T.

Is the SMCJ100A-E3/57T RoHS-compliant and halogen-free?

Yes, the SMCJ100A-E3/57T carries the E3 suffix, indicating full RoHS compliance per EU Directive 2011/65/EU. It is not halogen-free; for halogen-free and RoHS-compliant versions, specify the M3 suffix (e.g., SMCJ100A-M3/57T). Both E3 and M3 meet JESD201 Class 2 whisker resistance requirements.

Does the SMCJ100A-E3/57T have AEC-Q101 qualification?

The base SMCJ100A-E3/57T is not AEC-Q101 qualified; however, Vishay offers the SMCJ100AHE3_X variant (e.g., SMCJ100AHE3_A) which adds AEC-Q101 qualification while retaining identical electrical specs and SMC package. The "HE3" ordering code denotes RoHS-compliant + AEC-Q101 qualified versions of the SMCJ100A-E3/57T family.

What is the thermal resistance of the SMCJ100A-E3/57T?

The SMCJ100A-E3/57T has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W and junction-to-lead resistance (RθJL) of 15 °C/W, measured under standard JEDEC conditions. These values assume mounting on minimum recommended pad layout (0.31″ × 0.31″ copper per terminal); actual RθJA improves with larger copper areas or internal layer heatsinking for the SMCJ100A-E3/57T.

How does the SMCJ100A-E3/57T differ from the SMCJ100CA-E3/57T?

The SMCJ100A-E3/57T is unidirectional (cathode-banded), while the SMCJ100CA-E3/57T is bidirectional with no polarity marking. Both share identical VWM (100 V), VBR (111–123 V), VC (162 V), and PPPM (1500 W), but the CA version conducts in both directions-making it suitable for AC or floating lines. The SMCJ100A-E3/57T offers lower leakage (1.0 µA vs. 2.0 µA for CA at VWM) in DC-grounded applications.

SMCJ100A-E3/57T Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
100V
Voltage - Breakdown (Min):
111V
Voltage - Clamping (Max) @ Ipp:
162V
Current - Peak Pulse (10/1000µs):
9.3A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCJ)

SMCJ100A-E3/57T FAQ

1.How can I place an order for SMCJ100A-E3/57T through Aetrix?

Please submit a Request for Quotation (RFQ) for SMCJ100A-E3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMCJ100A-E3/57T reliable?

The price and inventory of SMCJ100A-E3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ100A-E3/57T is usually 5 days.

3.What payment methods are accepted for SMCJ100A-E3/57T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ100A-E3/57T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMCJ100A-E3/57T?

SMCJ100A-E3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMCJ100A-E3/57T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMCJ100A-E3/57T?

For technical support, including SMCJ100A-E3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ100A-E3/57T requirements.

6.How does Aetrix verify that SMCJ100A-E3/57T is sourced from the original manufacturer or authorized distributors?

All SMCJ100A-E3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ100A-E3/57T meets industry standards.

7.What is the process for return or replacement of SMCJ100A-E3/57T?

All SMCJ100A-E3/57T units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ100A-E3/57T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMCJ100A-E3/57T part is unused and in its original packaging.

Return procedure for SMCJ100A-E3/57T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMCJ100A-E3/57T Tags

  • SMCJ100A-E3/57T
  • SMCJ100A-E3/57T PDF
  • SMCJ100A-E3/57T Datasheet
  • SMCJ100A-E3/57T Specifications
  • SMCJ100A-E3/57T Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMCJ100A-E3/57T
  • Buy SMCJ100A-E3/57T
  • SMCJ100A-E3/57T Price
  • SMCJ100A-E3/57T Distributor
  • SMCJ100A-E3/57T Supplier
  • SMCJ100A-E3/57T Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER