Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division SMCJ110AHE3/57T

Part No.:
SMCJ110AHE3/57T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
AetrixSMCJ110AHE3/57T.pdf
Description:
TVS DIODE 110VWM 177VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,917

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMCJ110AHE3/57T from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMC (DO-214AB) package, designed for clamping voltage transients up to 177 V at 8.5 A peak pulse current (10/1000 µs), with 110 V standoff voltage and 1500 W peak pulse power rating. It protects MOSFETs, ICs, and sensor signal lines in automotive and industrial power electronics.

For engineers reviewing the SMCJ110AHE3/57T datasheet, SMCJ110AHE3/57T pinout, SMCJ110AHE3/57T application, or SMCJ110AHE3/57T equivalent, key selection criteria include unidirectional clamping behavior, AEC-Q101 qualification status, thermal resistance (RθJA = 75 °C/W), and compatibility with automated SMT placement on 8.0 mm × 8.0 mm copper pads.

Technical Context

The SMCJ110AHE3/57T uses a glass-passivated silicon junction optimized for fast response (<1 ps) to ESD and lightning-induced surges. Its breakdown voltage range is 122–135 V at 1 mA test current, with clamping voltage of 177 V at 8.5 A IPPM - enabling robust protection of 100–120 V DC bus interfaces without compromising system reliability.

Designed for unidirectional operation, it features a cathode band marking, 1.0 µA max reverse leakage at 110 V, and operates across -55 °C to +150 °C junction temperature. The device meets J-STD-020 MSL Level 1 and is qualified to AEC-Q101 for automotive under-hood applications.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 110 V - maximum continuous reverse operating voltage before clamping begins
VBR min/max 122 V / 135 V at IT = 1 mA - ensures reliable triggering above normal operating voltage
VC @ IPPM 177 V at 8.5 A (10/1000 µs) - defines worst-case clamped voltage seen by protected circuit
PPPM 1500 W - peak surge power handling capability under standardized transient waveform
IFSM 200 A - 8.3 ms half-sine surge current rating for unidirectional forward conduction
RθJA 75 °C/W - thermal resistance from junction to ambient, critical for PCB pad layout design
TJ max +150 °C - maximum junction temperature, supporting under-hood automotive deployment

Pinout & Package

Package: SMC (DO-214AB), surface-mount, matte tin-plated leads, RoHS-compliant and AEC-Q101 qualified. Dimensions: 7.11 mm × 6.22 mm × 2.62 mm (L × W × H). Mounting requires 0.31″ × 0.31″ (8.0 mm × 8.0 mm) copper pads per terminal.

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) Transient current sink Connected to protected line; conducts surge current to ground during overvoltage event
Anode Reference/return path Typically tied to system ground or low-impedance return plane for effective clamping

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock
1500 W peak pulse power Withstands high-energy transients common in 24 V/48 V vehicle power systems and industrial motor drives
Low incremental surge resistance Minimizes voltage overshoot during fast-rising transients (e.g., ISO 7637-2 Pulse 1/2a/5a)
MSL Level 1, 260 °C reflow compatible Enables single-pass lead-free reflow assembly without moisture sensitivity concerns
Glass passivated junction Ensures stable VBR and low leakage over lifetime and temperature extremes

Applications

Automotive Power Distribution Industrial Motor Drive Control

Use Scenario: Protection of gate drivers and microcontrollers in 12 V/24 V battery-fed power distribution modules subject to load dump and jump-start transients.

IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between high-side switch output and ground to limit voltage spikes to safe levels.

Use Value: Clamps 120 V load dump events to ≤177 V, preventing damage to 200 V-rated MOSFETs and logic-level controllers.

Use Scenario: Surge suppression on encoder feedback lines and analog sensor inputs in variable-frequency drives exposed to EMI from IGBT switching.

IC Role / Device Role / Timing Role: Signal-line TVS placed at connector interface to shunt induced noise before entering ADC or isolation barrier.

Use Value: Limits transient amplitude to <180 V while maintaining <1.0 µA leakage at 110 V, preserving signal integrity in precision measurement paths.

Telecom DC Power Feeds Renewable Energy Inverter DC Link

Use Scenario: Standoff protection on -48 V telecom rectifier outputs against lightning-induced surges on outdoor plant wiring.

IC Role / Device Role / Timing Role: Primary unidirectional clamp on DC feed line upstream of DC/DC converters and PMICs.

Use Value: Absorbs 1500 W surges per IEEE C62.35 standards while maintaining 110 V nominal operation and zero derating up to +85 °C ambient.

Use Scenario: Overvoltage clamping on photovoltaic string inputs of solar inverters subjected to grid fault transients and capacitor discharge events.

IC Role / Device Role / Timing Role: Front-end TVS on MPPT input stage to protect boost converter MOSFETs and current sense amplifiers.

Use Value: Withstands repeated 10/1000 µs surges up to 8.5 A without parameter shift, verified per AEC-Q101 stress testing protocols.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ110AHE3/52T Lower PPPM (600 W), smaller SMB (DO-214AA) package, same VWM/VBR specs Limited to lower-energy transients; unsuitable for load dump or high-current surge environments Select when board space is constrained and surge energy remains below 600 W
SMCJ110CAHE3/57T Bidirectional variant; identical VWM, VBR, and PPPM but symmetric clamping in both polarities Required for AC-coupled or floating signal lines where polarity reversal may occur Choose only if bidirectional protection is mandated by circuit topology or standard compliance

Compared with SMBJ110AHE3/52T and SMCJ110CAHE3/57T, the SMCJ110AHE3/57T delivers higher surge robustness in unidirectional DC systems while maintaining AEC-Q101 qualification - making it optimal for automotive power modules and industrial DC bus protection where directional clamping suffices and energy levels exceed 600 W.

Availability

SMCJ110AHE3/57T is available at Aetrix Electronics and suitable for automotive power distribution, industrial motor drive control, telecom DC feeds, renewable energy inverter DC link, and sensor interface protection requiring stable component supply and long-term lifecycle support.

Supply support for SMCJ110AHE3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, automotive qualification, and high-power handling.

The SMCJ series was developed specifically for high-energy transient suppression in harsh-environment applications - targeting automotive, industrial, and telecom infrastructure where AEC-Q101 compliance and 1500 W surge capability are mandatory.

FAQ

What is the clamping voltage of SMCJ110AHE3/57T at its rated peak pulse current?

The SMCJ110AHE3/57T has a maximum clamping voltage (VC) of 177 V at 8.5 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured with the device mounted on 0.31″ × 0.31″ copper pads and defines the upper voltage limit imposed on protected circuitry during surge events. The SMCJ110AHE3/57T maintains this clamping performance across its full operating temperature range.

Is SMCJ110AHE3/57T qualified for automotive applications?

Yes, the SMCJ110AHE3/57T carries the HE3 suffix, indicating RoHS-compliance and full AEC-Q101 qualification. It has passed stress tests including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing - confirming suitability for under-hood automotive use. The SMCJ110AHE3/57T is explicitly listed in Vishay's AEC-Q101 qualified product matrix for transient suppressors.

What does the "57T" suffix mean in SMCJ110AHE3/57T?

The "57T" suffix denotes the preferred packaging configuration: 7-inch diameter plastic tape and reel, with a base quantity of 850 units per reel. This format supports automated SMT placement and is compatible with standard pick-and-place equipment. The SMCJ110AHE3/57T uses matte tin-plated leads and meets J-STD-002 solderability requirements, ensuring reliable reflow soldering in high-volume manufacturing.

How does SMCJ110AHE3/57T differ from SMCJ110CAHE3/57T?

The SMCJ110AHE3/57T is unidirectional, with a cathode band marking and asymmetric conduction - conducting only in reverse bias during overvoltage events. The SMCJ110CAHE3/57T is bidirectional, offering symmetrical clamping in both polarities and no polarity marking. Both share identical VWM (110 V), VBR, PPPM (1500 W), and package, but the SMCJ110AHE3/57T is selected for DC circuits where polarity is fixed and surge direction is known.

What is the maximum operating temperature for SMCJ110AHE3/57T?

The SMCJ110AHE3/57T has a specified junction temperature range of -55 °C to +150 °C. Its thermal resistance RθJA is 75 °C/W under standard mounting conditions (0.31″ × 0.31″ copper pads), meaning that at 6.5 W steady-state dissipation, junction temperature rise above ambient is ~488 °C - which exceeds rating, confirming it is intended for transient-only operation. Continuous power dissipation must remain ≤6.5 W at TA = 50 °C, per datasheet limits.

SMCJ110AHE3/57T Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
110V
Voltage - Breakdown (Min):
122V
Voltage - Clamping (Max) @ Ipp:
177V
Current - Peak Pulse (10/1000µs):
8.5A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCJ)

SMCJ110AHE3/57T FAQ

1.How can I place an order for SMCJ110AHE3/57T through Aetrix?

Please submit a Request for Quotation (RFQ) for SMCJ110AHE3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMCJ110AHE3/57T reliable?

The price and inventory of SMCJ110AHE3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ110AHE3/57T is usually 5 days.

3.What payment methods are accepted for SMCJ110AHE3/57T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ110AHE3/57T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMCJ110AHE3/57T?

SMCJ110AHE3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMCJ110AHE3/57T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMCJ110AHE3/57T?

For technical support, including SMCJ110AHE3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ110AHE3/57T requirements.

6.How does Aetrix verify that SMCJ110AHE3/57T is sourced from the original manufacturer or authorized distributors?

All SMCJ110AHE3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ110AHE3/57T meets industry standards.

7.What is the process for return or replacement of SMCJ110AHE3/57T?

All SMCJ110AHE3/57T units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ110AHE3/57T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMCJ110AHE3/57T part is unused and in its original packaging.

Return procedure for SMCJ110AHE3/57T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMCJ110AHE3/57T Tags

  • SMCJ110AHE3/57T
  • SMCJ110AHE3/57T PDF
  • SMCJ110AHE3/57T Datasheet
  • SMCJ110AHE3/57T Specifications
  • SMCJ110AHE3/57T Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division SMCJ110AHE3/57T
  • Buy SMCJ110AHE3/57T
  • SMCJ110AHE3/57T Price
  • SMCJ110AHE3/57T Distributor
  • SMCJ110AHE3/57T Supplier
  • SMCJ110AHE3/57T Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER